Texas Instruments CD74HCT563M, CD74HCT563E, CD74HCT533E, CD74HC533E, CD74HC563M Datasheet

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CD74HC533, CD74HCT533,
[ /Title (CD74H C533, CD74H CT533, CD74H C563, CD74H CT563) /Subject (High Speed
Data sheet acquired from Harris Semiconductor SCHS187
January 1998
Features
• Common Latch-Enable Control
• Common Three-State Output Enable Control
• Buffered Inputs
• Three-State Outputs
• Typical Propagation Delay = 13ns at V C
= 15pF, TA = 25oC (Data to Output)
L
• Fanout (Over Temperature Range)
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
• Wide Operating Temperature Range . . . -55
• Balanced Propagation Delay and Transition Times
• Significant Power Reduction Compared to LSTTL Logic ICs
• HC Types
- 2V to 6V Operation
- High Noise Immunity: N
at VCC = 5V
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
V
= 0.8V (Max), VIH = 2V (Min)
IL
- CMOS Input Compatibility, I
= 30%, NIH = 30% of V
IL
1µA at VOL, V
l
CC
= 5V,
o
CD74HC563, CD74HCT563
High Speed CMOS Logic Octal Inverting
Transparent Latch, Three-State Outputs
Description
The Harris CD74HC533, CD74HCT533, CD74HC563, and CD74HCT563 are high speed Octal Transparent Latches manufactured with silicon gate CMOS technology. They pos­sess the low power consumption of standard CMOS inte­grated circuits, as well as the ability to drive 15 LSTTL devices.
The outputs are transparent to the inputs when the latch
C to 125oC
CC
OH
enable ( data is latched. The output enable ( state outputs. When the output enable ( outputs are in the high impedance state. The latch operation is independent to the state of the output enable.
The CD74HC533 and CD74HCT533 are identical in function to the CD74HC563 and CD74HCT563 but have different pinouts. The CD74HC533 and CD74HCT533 are similar to the CD74HC373 and CD74HCT373; the latter are non­inverting types.
Ordering Information
NOTES:
LE) is high. When the latch enable (LE) goes lo w the
OE) controls the three-
OE) is high the
TEMP. RANGE
PART NUMBER
CD74HC533E -55 to 125 20 Ld PDIP F20.3 CD74HCT533E -55 to 125 20 Ld PDIP E20.3 CD74HC563E -55 to 125 20 Ld PDIP E20.3 CD74HCT563E -55 to 125 20 Ld PDIP E20.3 CD74HCT563M -55 to 125 20 Ld SOIC M20.3
1. When ordering, use the entire part number. Add the suffix 96 to obtain the variant in the tape and reel.
2. Wafer and die for this part number are available which meets all electrical specifications. Please contact your local sales office or Harris customer service for ordering information.
(oC) PACKAGE
PKG.
NO.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright
© Harris Corporation 1998
1
File Number 1599.1
Pinouts
CD74HC533, CD74HCT533, CD74HC563, CD74HCT563
CD74HC533, CD74HCT533
(PDIP, SOIC)
TOP VIEW
1
OE
Q0
2
D0
3
D1
4
Q1
5
Q2
6
D2
7 8
D3
9
Q3
GND
10
Functional Block Diagram
LE
D
0
D G
D
O
CD74HC563, CD74HCT563
(PDIP, SOIC)
TOP VIEW
V
20
CC
Q7
19
D7
18
D6
17
Q6
16
Q5
15
D5
14
D4
13 12
Q4
11
LE 11
OE
D0 D1 D2 D3 D4 D5 D6 D7
GND
1 2 3 4 5 6 7 8 9
10
CD74HC/HCT533
1
D
2
O
D G
D
3
O
D G
D
4
O
D G
D
5
O
D G
D
6
O
D G
D G
V
20
CC
Q0
19
Q1
18
Q2
17
Q3
16
Q4
15
Q5
14
Q6
13 12
Q7 LE
D
7
O
O
D G
OE
O
0
O
1
O
2
O
3
O
4
O
5
O
6
O
7
TRUTH TABLE
OUTPUT ENABLE LATCH ENABLE DATA Q OUTPUT
LHHL LHLH LLlH LLhL
HXXZ
NOTE: H = High Voltage Level, L = Low VoltageLevel, X = Don’t Care, Z = High Impedance State, l = Low voltage level one set-up time prior to the high to low latch enable transition, h = High voltage level one set-up time prior to the high to low latch enable transition.
2
CD74HC533, CD74HCT533, CD74HC563, CD74HCT563
Absolute Maximum Ratings Thermal Information
DC Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V DC Input Diode Current, I
IK
For VI < -0.5V or VI > VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, I
OK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Drain Current, per Output, I
O
For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA
DC Output Source or Sink Current per Output Pin, I
O
For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA
Operating Conditions
Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Supply Voltage Range, V
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to V Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
3. θJA is measured with the component mounted on an evaluation PC board in free air.
CC
Thermal Resistance (Typical, Note 3) θJA (oC/W)
PDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CC
DC Electrical Specifications
PARAMETER SYMBOL
HC TYPES
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage CMOS Loads
High Level Output Voltage TTL Loads
Low Level Output Voltage CMOS Loads
Low Level Output Voltage TTL Loads
Input Leakage Current
Quiescent Device Current
V
IH
V
IL
V
OH
V
OL
I
I
I
CC
TEST
CONDITIONS
(V) IO(mA) MIN TYP MAX MIN MAX MIN MAX
I
VCC (V)
o
25
C -40oC TO 85oC -55oC TO 125oC
- - 2 1.5 - - 1.5 - 1.5 - V
4.5 3.15 - - 3.15 - 3.15 - V 6 4.2 - - 4.2 - 4.2 - V
- - 2 - - 0.5 - 0.5 - 0.5 V
4.5 - - 1.35 - 1.35 - 1.35 V 6 - - 1.8 - 1.8 - 1.8 V
VIH or
V
-0.02 2 1.9 - - 1.9 - 1.9 - V
IL
-0.02 4.5 4.4 - - 4.4 - 4.4 - V
-0.02 6 5.9 - - 5.9 - 5.9 - V
-6 4.5 3.98 - - 3.84 - 3.7 - V
-7.8 6 5.48 - - 5.34 - 5.2 - V
VIH or
V
0.02 2 - - 0.1 - 0.1 - 0.1 V
IL
0.02 4.5 - - 0.1 - 0.1 - 0.1 V
0.02 6 - - 0.1 - 0.1 - 0.1 V 6 4.5 - - 0.26 - 0.33 - 0.4 V
7.8 6 - - 0.26 - 0.33 - 0.4 V
VCC or
-6--±0.1 - ±1-±1µA
GND
VCC or
0 6 - - 8 - 80 - 160 µA
GND
UNITSV
3
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