Texas Instruments TLC251CD, TLC251CDR, TLC251BCP, TLC251ACP, TLC251ACDR Datasheet

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

SLOS001E ± JULY 1983 ± REVISED AUGUST 1994

D Wide Range of Supply Voltages

D OR P PACKAGE

1.4 V to 16 V

(TOP VIEW)

D True Single-Supply Operation

OFFSET N1

BIAS SELECT

1

8

D Common-Mode Input Voltage Range

IN±

2

7

VDD

Includes the Negative Rail

IN+

3

6

OUT

D Low Noise . . . 30 nV/√

Hz

Typ at 1 kHz

VDD ±/GND

4

5

OFFSET N2

(High Bias)

D ESD Protection Exceeds 2000 V Per

MIL-STD-833C, Method 3015.1

symbol

description

BIAS SELECT

The TLC251C, TLC251AC, and TLC251BC are

low-cost, low-power programmable operational

IN +

+

amplifiers designed to operate with single or dual

OUT

supplies. Unlike traditional metal-gate CMOS

IN ±

±

operational amplifiers, these devices utilize Texas

Instruments silicon-gate LinCMOS process,

OFFSET N1

giving them stable input offset voltages without

OFFSET N2

sacrificing the advantages of metal-gate CMOS.

This series of parts is available in selected grades of input offset voltage and can be nulled with one external potentiometer. Because the input common-mode range extends to the negative rail and the power consumption is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the application. The series features operation down to a 1.4-V supply and is stable at unity gain.

These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised in handling these devices as exposure to ESD may result in a degradation of the device parametric performance.

Because of the extremely high input impedance and low input bias and offset currents, applications for the TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of these devices. Many features associated with bipolar technology are available with LinCMOS operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series.

In addition, by driving the bias-select input with a logic signal from a microprocessor, these operational amplifiers can have software-controlled performance and power consumption. The TLC251C series is well suited to solve the difficult problems associated with single battery and solar cell-powered applications.

The TLC251C series is characterized for operation from 0°C to 70°C.

AVAILABLE OPTIONS

		VIOmax	PACKAGED DEVICES		CHIP FORM
	TA
			SMALL OUTLINE	PLASTIC DIP
		AT 25°C			(Y)
			(D)	(P)
		10 mV	TLC251CD	TLC251CP	TLC251Y
	0°C to 70°C	5 mV	TLC251ACD	TLC251ACP	Ð
		2 mV	TLC251BCD	TLC251BCP	Ð

The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are tested at 25°C.

LinCMOS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1994, Texas Instruments Incorporated

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

1

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

SLOS001E ± JULY 1983 ± REVISED AUGUST 1994
schematic
VDD	7
			Current
			Control
			ESD-	8	BIAS
			Protective
					SELECT
		ESD-	Network
	3
IN +		Protective
		Network
	2	ESD-
IN ±		Protective
		Network
				6	OUT
OFFSET	1
N1
OFFSET	5
N2
VDD ± /GND	4

2	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

SLOS001E ± JULY 1983 ± REVISED AUGUST 1994

TLC251Y chip information

These chips, properly assembled, display characteristics similar to the TLC251C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

				(2)	(1)	(8)			(7)
48
				(3)	(4)	(5)			(6)
							55

							VDD
BIAS SELECT			(8)					(7)
			(3)
IN +
				+				(6)		OUT
			(2)
IN ±				±
			(1)
OFFSET N1
			(5)					(4)
OFFSET N2
				VDD ± /GND

CHIP THICKNESS: 15 TYPICAL BONDING PADS: 4 × 4 MINIMUM TJMAX = 150°C

TOLERANCES ARE ± 10%.

ALL DIMENSIONS ARE IN MILS.

PIN (4) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP.

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

3

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

SLOS001E ± JULY 1983 ± REVISED AUGUST 1994

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)²

Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . 18	V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . ± 18	V
Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . ±0.3 V to 18	V
Duration of short circuit at (or below) 25°C free-air temperature (see Note 3) .	. . . . . . . . . . . . . . . . . unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	See Dissipation Rating Table
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . ±65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . 260°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to VDD ±/GND.

2.Differential voltages are at IN+ with respect to IN ±.

3.The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure the maximum dissipation rating is not exceeded.

		DISSIPATION RATING TABLE
	PACKAGE	TA ≤ 25°C	DERATING FACTOR	TA = 70°C
		POWER RATING	ABOVE TA = 25°C	POWER RATING
	D	725 mW	5.8 mW/°C	464 mW
	P	1000 mW	8.0 mW/°C	640 mW

recommended operating conditions

		MIN	MAX		UNIT
Supply voltage, VDD		1.4	16		V
	VDD = 1.4 V	0	0.2
Common-mode input voltage, VIC	VDD = 5 V	± 0.2	4		V
	VDD = 10 V	± 0.2	9
	VDD = 16 V	± 0.2	14
Operating free-air temperature, TA		0	70		°C
Bias-select voltage		See Application
			Information

4	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

SLOS001E ± JULY 1983 ± REVISED AUGUST 1994

HIGH-BIAS MODE

electrical characteristics at specified free-air temperature

				TEST					TLC251C, TLC251AC, TLC251BC
	PARAMETER							T ²									UNIT
									V	DD	= 5 V		V	DD	= 10 V
			CONDITIONS					A
									MIN	TYP		MAX	MIN		TYP	MAX
		TLC251C						25°C			1.1	10			1.1	10
			VO	= 1.4 V,				Full range				12				12
								25°C			0.9	5			0.9	5
VIO	Input offset voltage	TLC251AC	VIC = 0 V,														mV
			RS	= 50 Ω,				Full range				6.5				6.5
			RL = 10 kΩ
		TLC251BC						25°C		0.34		2			0.39	2
								Full range				3				3
αVIO	Average temperature coefficient of							25°C to			1.8				2		μV/°C
	input offset voltage							70°C
IIO	Input offset current (see Note 4)		VO = VDD/2,					25°C			0.1				0.1		pA
			V	= V	DD		/2	°			7	300			7	300
			IC					70 C
IIB	Input bias current (see Note 4)		VO = VDD/2,					25°C			0.6				0.7		pA
			V	= V	DD		/2	°			40	600			50	600
			IC					70 C
									± 0.2	± 0.3			± 0.2	± 0.3
								25°C	to		to		to		to		V
VICR	Common-mode input voltage								4		4.2		9		9.2
	range (see Note 5)								± 0.2				± 0.2
								Full range	to				to				V
									3.5				8.5
			VID	= 100 mV,				25°C	3.2		3.8		8		8.5
VOH	High-level output voltage							0°C	3		3.8		7.8		8.5		V
			RL = 10 k			Ω
								70°C	3		3.8		7.8		8.4
			VID	= ± 100 mV,				25°C			0	50			0	50
VOL	Low-level output voltage							0°C			0	50			0	50	mV
			IOL	= 0
								70°C			0	50			0	50
	Large-signal differential voltage		RL = 10 kΩ,					25°C	5		23		10		36
AVD								0°C	4		27		7.5		42		V/mV
	amplification		See Note 6
								70°C	4		20		7.5		32
								25°C	65		80		65		85
CMRR	Common-mode rejection ratio		VIC = VICRmin					0°C	60		84		60		88		dB
								70°C	60		85		60		88
	Supply-voltage rejection ratio		VDD = 5 V to 10 V,					25°C	65		95		65		95
kSVR								0°C	60		94		60		94		dB
	( VDD/ VIO)		VO	= 1.4 V
								70°C	60		96		60		96
II(SEL)	Input current (BIAS SELECT)		VI(SEL) = 0					25°C		± 1.4				± 1.9			μA
			VO = VDD/2,					25°C			675	1600			950	2000
																	μA
IDD	Supply current		VIC = VDD/2,					0°C			775	1800		1125		2200
			No load					70°C			575	1300			750	1700

² Full range is 0°C to 70°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5.This range also applies to each input individually.

6.At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

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5

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

SLOS001E ± JULY 1983 ± REVISED AUGUST 1994

HIGH-BIAS MODE

operating characteristics, VDD = 5 V

						TLC251C, TLC251AC,
	PARAMETER		TEST CONDITIONS		TA	TLC251BC			UNIT
						MIN	TYP	MAX
					25°C		3.6
				VI(PP) = 1 V	0°C		4
SR	Slew rate at unity gain	RL = 10 kΩ,	CL = 20 pF		70°C		3		V/μs
					25°C		2.9
				VI(PP) = 2.5 V	0°C		3.1
					70°C		2.5
Vn	Equivalent input noise voltage	f = 1 kHz,	RS = 20 Ω		25°C		25		nV/√	Hz
					25°C		320
				RL = 10 kΩ
BOM	Maximum output-swing bandwidth	VO = VOH,	CL = 20 pF,		0°C		340		kHz
					70°C		260
					25°C		1.7
B1	Unity-gain bandwidth	VI = 10 mV,	CL = 20 pF		0°C		2		MHz
					70°C		1.3
					25°C		46°
φm
	Phase margin	VI = 10 mV,	f = B1,	CL = 20 pF	0°C		47°
					70°C		44°

operating characteristics, VDD = 10 V

						TLC251C, TLC251AC,
	PARAMETER		TEST CONDITIONS		TA	TLC251BC			UNIT
						MIN	TYP	MAX
					25°C		5.3
				VI(PP) = 1 V	0°C		5.9
SR	Slew rate at unity gain	RL = 10 kΩ,	CL = 20 pF		70°C		4.3		V/μs
					25°C		4.6
				VI(PP) = 5.5 V	0°C		5.1
					70°C		3.8
Vn	Equivalent input noise voltage	f = 1 kHz,	RS = 20 Ω		25°C		25		nV/√	Hz
					25°C		200
				RL = 10 kΩ
BOM	Maximum output-swing bandwidth	VO = VOH,	CL = 20 pF,		0°C		220		kHz
					70°C		140
					25°C		2.2
B1	Unity-gain bandwidth	VI = 10 mV,	CL = 20 pF		0°C		2.5		MHz
					70°C		1.8
					25°C		49°
φm
	Phase margin	VI = 10 mV,	f = B1,	CL = 20 pF	0°C		50°
					70°C		46°

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