Texas Instruments TLC5540IPWR, TLC5540IPW, TLC5540INSR, TLC5540INSLE, TLC5540INS Datasheet

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TLC5540 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

SLAS105C ± JANUARY 1995 ± REVISED MAY 1999

features

 

 

 

 

PW OR NS PACKAGE

D

8-Bit Resolution

 

 

 

 

 

 

 

(TOP VIEW)

 

 

 

 

 

 

 

 

 

 

 

DGND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

Differential Linearity Error

 

 

OE

 

 

1

24

 

 

 

 

 

 

 

 

±

 

±

 

°

DGND

 

2

23

 

REFB

 

±

 

0.3 LSB Typ,

 

1 LSB Max (25 C)

 

 

 

 

 

 

 

 

 

± ± 1 LSB Max

 

 

 

D1(LSB)

 

3

22

 

REFBS

D

Integral Linearity Error

 

 

D2

 

4

21

 

AGND

 

± ± 0.6 LSB, ± 0.75 LSB Max (25°C)

 

D3

 

5

20

 

AGND

 

± ± 1 LSB Max

 

 

 

 

D4

 

6

19

 

ANALOG IN

D Maximum Conversion Rate of

 

 

D5

 

7

18

 

VDDA

 

 

D6

 

8

17

 

REFT

 

40 Megasamples Per Second (MSPS) Max

 

 

 

 

 

D7

 

 

 

 

REFTS

 

 

 

9

16

 

D Internal Sample and Hold Function

 

 

 

D8(MSB)

 

10

15

 

VDDA

 

 

D 5-V Single Supply Operation

 

 

 

 

VDDD

 

11

14

 

VDDA

D Low Power Consumption . . . 85 mW Typ

CLK

 

12

13

 

VDDD

 

 

DAnalog Input Bandwidth . . . 75 MHz Typ

DInternal Reference Voltage Generators

applications

AVAILABLE OPTIONS

 

 

 

TA

PACKAGE

 

 

D

Quadrature Amplitude Modulation (QAM)

TSSOP (PW)

SOP (NS)

 

and Quadrature Phase Shift Keying (QPSK)

 

 

 

 

± 0°C to 70°C

TLC5540CPW

TLC5540CNSLE

 

Demodulators

 

± 40°C to 85°C

TLC5540IPW

TLC5540INSLE

D

Digital Television

 

 

 

 

 

 

D Charge-Coupled Device (CCD) Scanners

 

 

 

D

Video Conferencing

 

 

 

D Digital Set-Top Box

 

 

 

D

Digital Down Converters

 

 

 

D High-Speed Digital Signal Processor

 

 

 

 

Front End

 

 

 

description

The TLC5540 is a high-speed, 8-bit analog-to-digital converter (ADC) that converts at sampling rates up to 40 megasamples per second (MSPS). Using a semiflash architecture and CMOS process, the TLC5540 is able to convert at high speeds while still maintaining low power consumption and cost. The analog input bandwidth of 75 MHz (typ) makes this device an excellent choice for undersampling applications. Internal resistors are provided to generate 2-V full-scale reference voltages from a 5-V supply, thereby reducing external components. The digital outputs can be placed in a high impedance mode. The TLC5540 requires only a single 5-V supply for operation.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1999, Texas Instruments Incorporated

POST OFFICE BOX 655303 DALLAS, TEXAS 75265

1

Texas Instruments TLC5540IPWR, TLC5540IPW, TLC5540INSR, TLC5540INSLE, TLC5540INS Datasheet

TLC5540

8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

SLAS105C ± JANUARY 1995 ± REVISED MAY 1999

functional block diagram

 

Resistor

 

Reference

 

Divider

REFB

 

 

270 Ω

 

NOM

REFT

Lower Sampling

Comparators

REFBS

(4 Bit)

 

80 Ω

AGND

NOM

 

AGND

Lower Sampling

 

Comparators

VDDA

(4 Bit)

 

 

320 Ω

REFTS

NOM

Upper Sampling

ANALOG IN

Comparators

 

(4 Bit)

CLK

Clock

Generator

 

OE

 

Lower Encoder

D1(LSB)

(4 Bit)

D2

Lower Data

Latch

D3

 

 

D4

Lower Encoder

 

(4 Bit)

 

 

D5

Upper Data

D6

Latch

D7

Upper Encoder

D8(MSB)

(4 Bit)

 

schematics of inputs and outputs

 

EQUIVALENT OF ANALOG INPUT

EQUIVALENT OF EACH DIGITAL INPUT

EQUIVALENT OF EACH DIGITAL OUTPUT

VDDA

VDDD

VDDD

ANALOG IN

OE, CLK

D1 ± D8

 

AGND

DGND

DGND

2

POST OFFICE BOX 655303 DALLAS, TEXAS 75265

 

 

 

 

 

 

 

 

 

TLC5540

 

 

 

 

 

8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

 

 

 

 

 

 

 

 

 

SLAS105C ± JANUARY 1995 ± REVISED MAY 1999

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Terminal Functions

 

 

 

 

 

 

 

 

 

 

 

 

TERMINAL

I/O

 

 

DESCRIPTION

 

 

NAME

NO.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AGND

20, 21

 

Analog ground

 

 

 

 

 

 

 

 

 

 

 

 

 

ANALOG IN

19

I

Analog input

 

 

 

 

 

 

 

 

 

 

 

 

 

CLK

12

I

Clock input

 

 

 

 

 

 

 

 

 

 

 

 

 

DGND

2, 24

 

Digital ground

 

 

 

 

 

 

 

 

 

 

 

 

 

D1 ± D8

3 ± 10

O

Digital data out. D1:LSB, D8:MSB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

I

Output enable. When

 

= L, data is enabled. When

 

= H, D1±D8 is high impedance.

 

 

OE

 

OE

OE

 

 

 

 

 

 

 

 

VDDA

14, 15, 18

 

Analog VDD

 

 

VDDD

11, 13

 

Digital VDD

 

 

REFB

23

I

ADC reference voltage in (bottom)

 

 

 

 

 

 

 

 

REFBS

22

 

Reference voltage (bottom). When using the internal voltage divider to generate a nominal 2-V reference,

 

 

 

 

 

 

the REFBS terminal is shorted to the REFB terminal and the REFTS terminal is shorted to the REFT terminal

 

 

 

 

 

 

(see Figure 13 and Figure 14).

 

 

 

 

 

 

 

 

REFT

17

I

Reference voltage in (top)

 

 

 

 

 

 

 

 

REFTS

16

 

Reference voltage (top). When using the internal voltage divider to generate a nominal 2-V reference, the

 

 

 

 

 

 

REFTS terminal is shorted to the REFT terminal and the REFBS terminal is shorted to the REFB terminal

 

 

 

 

 

 

(see Figure 13 and Figure 14).

 

 

 

 

 

 

 

 

 

 

 

 

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)²

Supply voltage, VDDA, VDDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . 7 V

Reference voltage input range, VI(REFT), VI(REFB), VI(REFBS), VI(REFTS) . . . . . . . . . . . . . . .

AGND to VDDA

Analog input voltage range, VI(ANLG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AGND to VDDA

Digital input voltage range, VI(DGTL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DGND to VDDD

Digital output voltage range, VO(DGTL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DGND to VDDD

Operating free-air temperature range, TA: TLC5540C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . 0°C to 70°C

TLC5540I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±40°C to 85°C

Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±55°C to 150°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

POST OFFICE BOX 655303 DALLAS, TEXAS 75265

3

TLC5540

8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

SLAS105C ± JANUARY 1995 ± REVISED MAY 1999

recommended operating conditions

 

 

 

MIN

NOM

MAX

UNIT

 

 

 

 

 

 

 

 

 

VDDA ± AGND

4.75

5

5.25

V

Supply voltage

 

VDDD ± AGND

4.75

5

5.25

 

 

 

 

AGND ± DGND

± 100

0

100

mV

 

 

 

 

 

 

 

Reference input voltage (top), VI(REFT)

 

VI(REFB)+1.8

VI(REFB)+2

VDDA

V

Reference input voltage (bottom), VI(REFB)

 

0

0.6

VI(REFT)±1.8

V

Analog input voltage range, VI(ANLG) (see Note 1)

VI(REFB)

 

VI(REFT)

V

Full scale voltage, VI(REFT) ± VI(REFB)

 

1.8

 

5

V

High-level input voltage, VIH

 

4

 

 

V

Low-level input voltage, VIL

 

 

 

1

V

Pulse duration, clock high, tw(H)

 

12.5

 

 

ns

Pulse duration, clock low, tw(L)

 

12.5

 

 

ns

Operating free-air temperature, TA

 

TLC5540C

0

 

70

°C

 

 

 

 

 

 

 

TLC5540I

± 40

 

85

°C

 

 

 

 

 

 

 

 

 

 

NOTE 1: 1.8 V VI(REFT) ± VI(REFB) < VDD

4

POST OFFICE BOX 655303 DALLAS, TEXAS 75265

TLC5540 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

SLAS105C ± JANUARY 1995 ± REVISED MAY 1999

electrical characteristics at VDD = 5 V, VI(REFT) = 2.6 V, VI(REFB) = 0.6 V, fs = 40 MSPS, TA = 25°C

(unless otherwise noted)

 

PARAMETER

 

 

TEST CONDITIONS²

 

MIN

TYP

MAX

UNIT

EL

Linearity error, integral

 

 

 

TA = 25°C

 

 

± 0.6

 

± 1

 

 

f = 40 MSPS,

TA = MIN to MAX

 

 

 

 

± 1

 

 

 

 

 

 

 

 

 

 

 

 

s

 

 

 

 

 

 

 

LSB

 

 

 

V = 0.6 V to 2.6 V

°

 

 

±

0.3

±

0.75

ED

Linearity error, differential

 

I

TA = 25 C

 

 

 

 

 

 

 

 

TA = MIN to MAX

 

 

 

 

± 1

 

 

 

 

 

 

 

 

 

 

 

 

Self bias (1), VRB

 

Short REFB to REFBS

See Figure 13

 

0.57

0.61

 

0.65

 

 

Self bias (1), VRT

 

Short REFT to REFTS

 

2.47

2.63

 

2.80

V

 

 

 

 

 

 

Self bias (2), VRB

 

Short REFB to AGND

See Figure 14

 

 

AGND

 

 

 

 

 

 

 

 

 

 

Self bias (2), VRT

 

Short REFT to REFTS

 

2.18

2.29

 

2.4

 

 

 

 

 

 

 

Iref

Reference-voltage current

 

VI(REFT) ± VI(REFB) = 2 V

 

5.2

 

7.5

 

12

mA

Rref

Reference-voltage resistor

 

Between REFT and REFB terminals

 

165

270

 

350

Ω

Ci

Analog input capacitance

 

VI(ANLG) = 1.5 V + 0.07 Vrms

 

 

 

4

 

 

pF

EZS

Zero-scale error

 

VI(REFT) ± VI(REFB) = 2 V

 

± 18

± 43

 

± 68

mV

EFS

Full-scale error

 

 

± 25

 

0

 

25

 

 

 

 

 

 

 

 

IIH

High-level input current

 

VDD = 5.25 V,

VIH = VDD

 

 

 

 

 

5

μA

IIL

Low-level input current

 

VDD = 5.25 V,

VIL = 0

 

 

 

 

 

5

 

 

 

 

 

 

 

IOH

High-level output current

 

 

= GND,

VDD = 4.75 V,

VOH = VDD ± 0.5 V

± 1.5

 

 

 

 

 

 

OE

 

 

 

 

mA

 

 

 

 

 

 

 

 

 

 

 

 

IOL

Low-level output current

 

OE = GND,

VDD = 4.75 V,

VOL = 0.4 V

2.5

 

 

 

 

 

 

 

 

 

 

 

High-level

 

 

 

 

 

 

 

 

 

 

 

IOZH(lkg)

high-impedance-state

 

OE

= VDD,

VDD = 5.25,

VOH = VDD

 

 

 

 

16

 

 

output leakage current

 

 

 

 

 

 

 

 

 

 

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

Low-level

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZL(lkg)

high-impedance-state

 

OE

= VDD,

VDD = 4.75,

VOL = 0

 

 

 

 

16

 

 

output leakage current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 40 MSPS,

NTSC³ ramp wave input,

 

 

 

 

 

 

IDD

Supply current

 

s

 

 

 

 

17

 

27

mA

CL 25 pF,

See Note 2

 

 

 

 

 

 

 

 

 

 

 

 

 

² Conditions marked MIN or MAX are as stated in recommended operating conditions. ³ National Television System Committee

NOTE 2: Supply current specification does not include Iref.

POST OFFICE BOX 655303 DALLAS, TEXAS 75265

5

TLC5540

8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

SLAS105C ± JANUARY 1995 ± REVISED MAY 1999

operating characteristics at VDD = 5 V, VRT = 2.6 V, VRB = 0.6 V, fs = 40 MSPS, TA = 25°C (unless otherwise noted)

 

PARAMETER

TEST CONDITIONS²

MIN

TYP

MAX

UNIT

fs

Maximum conversion rate

TA = MIN to MAX

40

 

 

MSPS

fs

Minimum conversion rate

TA = MIN to MAX

 

5

 

MSPS

BW

Analog input full-power bandwidth

At ± 3 dB,

 

VI(ANLG) = 2 Vpp

 

75

 

MHz

tpd

Delay time, digital output

CL 10 pF (see Note 3)

 

9

15

ns

tPHZ

Disable time, output high to Hi-Z

CL 15 pF,

 

IOH = ± 4.5 mA

 

 

20

ns

tPLZ

Disable time, output low to Hi-Z

CL 15 pF,

 

IOL = 5 mA

 

 

20

ns

tPZH

Enable time, Hi-Z to output high

CL 15 pF,

 

IOH = ± 4.5 mA

 

 

15

ns

tPZL

Enable time, Hi-Z to output low

CL 15 pF,

 

IOL = 5 mA

 

 

15

ns

 

Differential gain

NTSC 40 IRE³

modulation wave,

 

1%

 

 

 

Differential phase

fs = 14.3 MSPS

 

0.7

 

degrees

tAJ

Aperture jitter time

 

 

 

 

30

 

ps

td(s)

Sampling delay time

 

 

 

 

4

 

ns

 

 

 

 

fI = 1 MHz

 

47

 

 

 

 

fs = 20 MSPS

 

fI = 3 MHz

44

47

 

 

 

 

 

fI = 6 MHz

 

46

 

 

 

 

 

 

 

 

 

SNR

Signal-to-noise ratio

 

 

fI = 10 MHz

 

45

 

dB

 

 

 

 

fI = 3 MHz

 

45.2

 

 

 

 

fs = 40 MSPS

 

fI = 6 MHz

42

44

 

 

 

 

 

 

fI = 10 MHz

 

42

 

 

 

 

 

 

fI = 1 MHz

 

7.64

 

 

 

 

fs = 20 MSPS

 

fI = 3 MHz

 

7.61

 

 

ENOB

Effective number of bits

 

fI = 6 MHz

 

7.47

 

Bits

 

 

 

 

 

 

fI = 10 MHz

 

7.16

 

 

 

 

 

 

 

 

 

 

fs = 40 MSPS

 

fI = 3 MHz

 

7

 

 

 

 

 

fI = 6 MHz

 

6.8

 

 

 

 

 

 

 

 

 

 

 

 

 

fI = 1 MHz

 

43

 

 

 

 

fs = 20 MSPS

 

fI = 3 MHz

35

42

 

 

THD

Total harmonic distortion

 

fI = 6 MHz

 

41

 

dBc

 

 

 

 

 

 

fI = 10 MHz

 

38

 

 

 

 

 

 

 

 

 

 

fs = 40 MSPS

 

fI = 3 MHz

 

40

 

 

 

 

 

fI = 6 MHz

 

38

 

 

 

 

 

 

 

 

 

 

Spurious free dynamic range

fs = 20 MSPS

 

fI = 3 MHz

41

46

 

dBc

 

fs = 40 MSPS

 

 

42

 

 

 

 

 

 

 

 

² Conditions marked MIN or MAX are as stated in recommended operating conditions. ³ Institute of Radio Engineers

NOTE 3: CL includes probe and jig capacitance.

6

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