Texas Instruments TLC3704MJB, TLC3704MFKB, TLC3704MJ, TLC3704MD, TLC3704IPWR Datasheet

QUAD MICROPOWER LinCMOS				TLC3704, TLC3704Q
		VOLTAGE COMPARATORS
	SLCS117A ± NOVEMBER 1986 ± REVISED OCTOBER 1996
D Push-Pull CMOS Output Drives Capacitive	D, J, OR N PACKAGE
Loads Without Pullup Resistor,		(TOP VIEW)
IO = ± 8 mA	1OUT					3OUT
			1	14
D Very Low Power . . . 200 μW Typ at 5 V
	2OUT		2	13		4OUT
D Fast Response Time . . . tPLH = 2.7 μs Typ
	VDD		3	12		GND
With 5-mV Overdrive	2IN ±		4	11		4IN +
D Single Supply Operation . . . 3 V to 16 V	2IN +		5	10		4IN ±
TLC3704M . . . 4 V to 16 V	1IN ±		6	9		3IN +
D On-Chip ESD Protection	1IN +		7	8		3IN ±

description

The TLC3704 consists of four independent micropower voltage comparators designed to operate from a single supply and be compatible with modern HCMOS logic systems. They are functionally similar to the LM339 but use 1/20th the power for similar response times. The push-pull CMOS output stage drives capacitive loads directly without a power-consuming pullup resistor to achieve the stated response time. Eliminating the pullup resistor not only reduces power dissipation, but also saves board space and component cost. The output stage is also fully compatible with TTL requirements.

Texas Instruments LinCMOS process offers superior analog performance to standard CMOS processes. Along with the standard CMOS advantages of low power without sacrificing speed, high input impedance, and low bias currents, the LinCMOS process offers extremely stable input offset voltages with large differential input voltages. This characteristic makes it possible to build reliable CMOS comparators.

FK PACKAGE (TOP VIEW)

	2OUT	1OUT	NC	3OUT	4OUT
VDD	3	2	1	20 19		GND
	4				18
NC	5				17	NC
2IN ±	6				16	4IN +
NC	7				15	NC
2IN +	8				14	4IN ±
	9	10 11 12 13
	1IN±	1IN+	NC	3IN±	3IN+

NC ± No internal connection

symbol (each comparator)

IN +

OUT

IN ±

The TLC3704C is characterized for operation over the commercial temperature range of 0°C to 70°C. The TLC3704I is characterized for operation over the extended industrial temperature range of ± 40°C to 85°C. The TLC3704M is characterized for operation over the full military temperature range of ± 55°C to 125°C. The TLC3704Q is characterized for operation from ± 40°C to 125°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinCMOS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1996, Texas Instruments Incorporated

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

1

TLC3704, TLC3704Q

QUAD MICROPOWER LinCMOS VOLTAGE COMPARATORS

SLCS117A ± NOVEMBER 1986 ± REVISED OCTOBER 1996

AVAILABLE OPTIONS

		VIOmax		PACKAGE
	TA
			SMALL OUTLINE	CERAMIC	CERAMIC DIP	PLASTIC DIP
		at 25°C
			(D)	(FK)	(J)	(N)
	0°C to 70°C	5 mV	TLC3704CD	Ð	Ð	TLC3704CN
	± 40°C to 85°C	5 mV	TLC3704ID	Ð	Ð	TLC3704IN
	± 55°C to 125°C	5 mV	Ð	TLC3704MFK	TLC3704MJ	Ð
	± 40°C to 125°C	5 mV	Ð	Ð	TLC3704QJ	Ð

The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC3704CDR).

functional block diagram (each comparator)

VDD

IN+

Differential

Input OUT

Circuits

IN±

GND

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)²

Supply voltage range, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . .	. ± 0.3 V to 18 V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . ± 18 V
Input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	. . ± 0.3 to VDD
Output voltage range, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	. . ± 0.3 to VDD
Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . ± 5 mA
Output current, IO (each output) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . ± 20 mA
Total supply current into VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . 40 mA
Total current out of GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . 60 mA
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	See Dissipation Rating Table
Operating free-air temperature range, TA: TLC3704C . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . 0 to 70°C
TLC3704I . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	± 40°C to 85°C
TLC3704M . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . .	± 55°C to 125°C
TLC3704Q . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . .	± 40°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . .	± 65°C to 150°C
Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . .	. . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or N package . . . . . . . . .		. . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: J package . .	. . . . . . . . . . . .	. . . . . . . 300°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.

2. Differential voltages are at IN+ with respect to IN ±.

2	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

			QUAD MICROPOWER LinCMOS			TLC3704, TLC3704Q
						VOLTAGE COMPARATORS
				SLCS117A ± NOVEMBER 1986 ± REVISED OCTOBER 1996
			DISSIPATION RATING TABLE
	PACKAGE	TA ≤ 25°C	DERATING FACTOR	TA = 70°C	TA = 85°C		TA = 125°C
		POWER RATING	ABOVE TA = 25°C	POWER RATING	POWER RATING		POWER RATING
	D	950 mW	7.6 mW/°C	608 mW		494 mW	N/A
	FK	1375 mW	11.0 mW/°C	880 mW		715 mW	275 mW
	J	1375 mW	11.0 mW/°C	880 mW		715 mW	275 mW
	N	1150 mW	9.2 mW/°C	736 mW		598 mW	N/A

recommended operating conditions

		TLC3704C		UNIT
	MIN	NOM	MAX
Supply voltage, VDD	3	5	16	V
Common-mode input voltage, VIC	± 0.2		VDD ± 1.5	V
High-level output current, IOH			± 20	mA
Low-level output current, IOL			20	mA
Operating free-air temperature, TA	0		70	°C

electrical characteristics at specified operating free-air temperature, VDD = 5 V (unless otherwise noted)

	PARAMETER	TEST CONDITIONS²		TA	TLC3704C			UNIT
					MIN	TYP	MAX
VIO	Input offset voltage	VDD = 5 V to 10 V,		25°C		1.2	5	mV
		VIC = VICRmin,	See Note 3	0°C to 70°C			6.5
IIO	Input offset current	VIC = 2.5 V		25°C		1		pA
				70°C			0.3	nA
IIB	Input bias current	VIC = 2.5 V		25°C		5		pA
				70°C			0.6	nA
				25°C	0 to
					VDD ± 1
VICR	Common-mode input voltage range							V
				0°C to 70°C	0 to
					VDD ± 1.5
				25°C		84
CMRR	Common-mode rejection ratio	VIC = VICRmin		70°C		84		dB
				0°C		84
				25°C		85
kSVR	Supply-voltage rejection ratio	VDD = 5 V to 10 V		70°C		85		dB
				0°C		85
VOH	High-level output voltage	VID = 1 V,	IOH = ±4 mA	25°C	4.5	4.7		V
				70°C	4.3
VOL	Low-level output voltage	VID = ±1 V,	IOH = 4 mA	25°C		210	300	mV
				70°C			375
IDD	Supply current (all four comparators)	Outputs low,	No load	25°C		35	80	μA
				0°C to 70°C			100

² All characteristics are measured with zero common-mode voltage unless otherwise noted.

NOTE 3: The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V.

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3

TLC3704, TLC3704Q

QUAD MICROPOWER LinCMOS VOLTAGE COMPARATORS

SLCS117A ± NOVEMBER 1986 ± REVISED OCTOBER 1996

recommended operating conditions

		TLC3704I		UNIT
	MIN	NOM	MAX
Supply voltage, VDD	3	5	16	V
Common-mode input voltage, VIC	± 0.2		VDD ± 1.5	V
High-level output current, IOH			± 20	mA
Low-level output current, IOL			20	mA
Operating free-air temperature, TA	± 40		85	°C

electrical characteristics at specified operating free-air temperature, VDD = 5 V, VIC = 0 (unless otherwise noted)

	PARAMETER	TEST CONDITIONS		TA	TLC3704I			UNIT
					MIN	TYP	MAX
VIO	Input offset voltage	VDD = 5 V to 10 V,		25°C		1.2	5	mV
		VIC = VICRmin,	See Note 3	± 40°C to 85°C			7
IIO	Input offset current	VIC = 2.5 V		25°C		1		pA
				85°C			1	nA
IIB	Input bias current	VIC = 2.5 V		25°C		5		pA
				85°C			2	nA
				25°C	0 to
					VDD ± 1
VICR	Common-mode input voltage range							V
				± 40°C to 85°C	0 to
					VDD ± 1.5
				25°C		84
CMRR	Common-mode rejection ratio	VIC = VICRmin		85°C		84		dB
				± 40°C		83
				25°C		85
kSVR	Supply-voltage rejection ratio	VDD = 5 V to 10 V		85°C		85		dB
				± 40°C		83
VOH	High-level output voltage	VID = 1 V,	IOH = ±4 mA	25°C	4.5	4.7		V
				85°C	4.3
VOL	Low-level output voltage	VID = ±1 V,	IOH = 4 mA	25°C		210	300	mV
				85°C			400
IDD	Supply current (all four comparators)	Outputs low,	No load	25°C		35	80	μA
				± 40°C to 85°C			125

NOTE 3: The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V.

4	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

QUAD MICROPOWER LinCMOS			TLC3704, TLC3704Q
	VOLTAGE COMPARATORS
SLCS117A ± NOVEMBER 1986 ± REVISED OCTOBER 1996
recommended operating conditions
			TLC3704M		UNIT
		MIN	NOM	MAX
Supply voltage, VDD		4	5	16	V
Common-mode input voltage, VIC		0		VDD ± 1.5	V
High-level output current, IOH				± 20	mA
Low-level output current, IOL				20	mA
Operating free-air temperature, TA		± 55		125	°C

electrical characteristics at specified operating free-air temperature, VDD = 5 V, VIC = 0 (unless otherwise noted)

	PARAMETER	TEST CONDITIONS		TA	TLC3704M			UNIT
					MIN	TYP	MAX
VIO	Input offset voltage	VDD = 5 V to 10 V,		25°C		1.2	5	mV
		VIC = VICRmin,	See Note 3	± 55°C to 125°C			10
IIO	Input offset current	VIC = 2.5 V		25°C		1		pA
				125°C			15	nA
IIB	Input bias current	VIC = 2.5 V		25°C		5		pA
				125°C			30	nA
				25°C	0 to
					VDD ± 1
VICR	Common-mode input voltage range							V
				± 55°C to 125°C	0 to
					VDD ± 1.5
				25°C		84
CMRR	Common-mode rejection ratio	VIC = VICRmin		125°C		83		dB
				± 55°C		82
				25°C		85
kSVR	Supply-voltage rejection ratio	VDD = 5 V to 10 V		125°C		85		dB
				± 55°C		82
VOH	High-level output voltage	VID = 1 V,	IOH = ±4 mA	25°C	4.5	4.7		V
				125°C	4.2
VOL	Low-level output voltage	VID = ±1 V,	IOH = 4 mA	25°C		210	300	mV
				125°C			500
IDD	Supply current (all four comparators)	Outputs low,	No load	25°C		35	80	μA
				± 55°C to 125°C			175

NOTE 3: The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V.

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

5

TLC3704, TLC3704Q

QUAD MICROPOWER LinCMOS VOLTAGE COMPARATORS

SLCS117A ± NOVEMBER 1986 ± REVISED OCTOBER 1996

recommended operating conditions

		TLC3704Q		UNIT
	MIN	NOM	MAX
Supply voltage, VDD	3	5	16	V
Common-mode input voltage, VIC	± 0.2		VDD ± 1.5	V
High-level output current, IOH			± 20	mA
Low-level output current, IOL			20	mA
Operating free-air temperature, TA	± 40		125	°C

electrical characteristics at specified operating free-air temperature, VDD = 5 V, VIC = 0 (unless otherwise noted)

	PARAMETER	TEST CONDITIONS		TA		TLC3704Q			UNIT
						MIN	TYP	MAX
VIO	Input offset voltage	VDD = 5 V to 10 V,		25°C			1.2	5	mV
		VIC = VICRmin,	See Note 3	± 40°C to 125°C				7
IIO	Input offset current	VIC = 2.5 V		25°C			1		pA
				125°C				15	nA
IIB	Input bias current	VIC = 2.5 V		25°C			5		pA
				125°C				30	nA
VICR	Common-mode input voltage			25°C		0 to VDD ± 1			V
	range			°	°	0 to VDD ± 1.5
				± 40 C to 125 C
				25°C			84
CMRR	Common-mode rejection ratio	VIC = VICRmin		125°C			83		dB
				± 40°C			83
				25°C			85
kSVR	Supply-voltage rejection ratio	VDD = 5 V to 10 V		125°C			85		dB
				± 40°C			83
VOH	High-level output voltage	VID = 1 V,	IOH = ±4 mA	25°C		4.5	4.7		V
				125°C		4.2
VOL	Low-level output voltage	VID = ±1 V,	IOH = 4 mA	25°C			210	300	mV
				125°C				500
IDD	Supply current (all four	Outputs low,	No load	25°C			35	80	μA
	comparators)			± 40°C to 125°C				175

NOTE 3: The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V.

6	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

	QUAD MICROPOWER LinCMOS				TLC3704, TLC3704Q
				VOLTAGE COMPARATORS
			SLCS117A ± NOVEMBER 1986 ± REVISED OCTOBER 1996
switching characteristics, VDD = 5 V, TA = 25°C
					TLC3704C, TLC3704I
	PARAMETER	TEST CONDITIONS			TLC3704M, TLC3704Q		UNIT
					MIN TYP	MAX
			Overdrive = 2 mV		4.5
		f = 10 kHz,	Overdrive = 5 mV		2.7
	Propagation delay time, low-to-high-level output²		Overdrive = 10 mV		1.9
t		CL = 50 pF					μs
PLH			Overdrive = 20 mV		1.4
			Overdrive = 40 mV		1.1
		VI = 1.4-V step at IN +			1.1
			Overdrive = 2 mV		4
		f = 10 kHz,	Overdrive = 5 mV		2.3
	Propagation delay time, high-to-low-level output²		Overdrive = 10 mV		1.5
t		CL = 50 pF					μs
PHL			Overdrive = 20 mV		0.95
			Overdrive = 40 mV		0.65
		VI = 1.4-V step at IN +			0.15
tf	Fall time	f = 10 kHz,	Overdrive = 50 mV		50		ns
		CL = 50 pF
tr	Rise time	f = 10 kHz,	Overdrive = 50 mV		125		ns
		CL = 50 pF

² Simultaneous switching of inputs causes degradation in output response.

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7

TLC3704, TLC3704Q

QUAD MICROPOWER LinCMOS VOLTAGE COMPARATORS

SLCS117A ± NOVEMBER 1986 ± REVISED OCTOBER 1996

PRINCIPLES OF OPERATION

LinCMOS process

The LinCMOS process is a linear polysilicon-gate CMOS process. Primarily designed for single-supply applications, LinCMOS products facilitate the design of a wide range of high-performance analog functions from operational amplifiers to complex mixed-mode converters.

While digital designers are experienced with CMOS, MOS technologies are relatively new for analog designers. This short guide is intended to answer the most frequently asked questions related to the quality and reliability of LinCMOS products. Further questions should be directed to the nearest TI field sales office.

electrostatic discharge

CMOS circuits are prone to gate oxide breakdown when exposed to high voltages even if the exposure is only for very short periods of time. Electrostatic discharge (ESD) is one of the most common causes of damage to CMOS devices. It can occur when a device is handled without proper consideration for environmental electrostatic charges, e.g., during board assembly. If a circuit in which one amplifier from a dual op amp is being used and the unused pins are left open, high voltages tends to develop. If there is no provision for ESD protection, these voltages may eventually punch through the gate oxide and cause the device to fail. To prevent voltage buildup, each pin is protected by internal circuitry.

Standard ESD-protection circuits safely shunt the ESD current by providing a mechanism whereby one or more transistors break down at voltages higher than the normal operating voltages but lower than the breakdown voltage of the input gate. This type of protection scheme is limited by leakage currents which flow through the shunting transistors during normal operation after an ESD voltage has occurred. Although these currents are small, on the order of tens of nanoamps, CMOS amplifiers are often specified to draw input currents as low as tens of picoamps.

To overcome this limitation, TI design engineers developed the patented ESD-protection circuit shown in Figure 1. This circuit can withstand several successive 2-kV ESD pulses, while reducing or eliminating leakage currents that may be drawn through the input pins. A more detailed discussion of the operation of the TI ESD-protection circuit is presented on the next page.

All input and output pins on LinCMOS and Advanced LinCMOS products have associated ESD-protection circuitry that undergoes qualification testing to withstand 2000 V discharged from a 100-pF capacitor through a 1500-Ω resistor (human body model) and 200 V from a 100-pF capacitor with no current-limiting resistor (charged device model). These tests simulate both operator and machine handling of devices during normal test and assembly operations.

VDD

R1
Input
	R2
Q1	Q2
D1	D2
GND

To Protected Circuit

D3

Figure 1. LinCMOS ESD-Protection Schematic

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