Texas Instruments TPS2105DR, TPS2105DBVT, TPS2105D, TPS2105DBVR, TPS2104DR Datasheet
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TPS2104, TPS2105
VAUX POWER-DISTRIBUTION SWITCHES
SLVS235A ± SEPTEMBER 1999 ± REVISED APRIL 2000
features
DDual-Input, Single-Output MOSFET Switch With No Reverse Current Flow (No Parasitic Diodes)
DIN1 . . . 250-mΩ, 500-mA N-Channel; 18-µA Supply Current
DIN2 . . . 1.3-Ω, 100-mA P-Channel; 0.75-µA Supply Current (VAUX Mode)
DAdvanced Switch Control Logic
DCMOS and TTL Compatible Enable Input
DControlled Rise, Fall, and Transition Times
D2.7 V to 5.5 V Operating Range
DSOT-23-5 and SOIC-8 Package
D±40°C to 85°C Ambient Temperature Range
D2-kV Human Body Model, 750-V Charged Device Model, 200-V Machine-Model ESD Protection
typical applications
DNotebook and Desktop PCs
DCell phone, Palmtops, and PDAs
DBattery Management
5 V VCC
5 V VAUX
Control Signal
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TPS2104 |
IN1 |
5 V |
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IN2 |
LOAD |
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EN |
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Holdup |
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Capacitor |
Figure 1. Typical Dual-Input Single-Output
Application
description
The TPS2104 and TPS2105 are dual-input, single-output power switches designed to provide uninterrupted output voltage when transitioning between two independent power supplies. Both devices combine one n-channel (250 mΩ) and one p-channel (1.3 Ω) MOSFET with a single output. The p-channel MOSFET (IN2) is used with auxiliary power supplies that deliver lower current for standby modes. The n-channel MOSFET (IN1) is used with a main power supply that delivers higher current required for normal operation. Low on-resistance makes the n-channel the ideal path for higher main supply current when power-supply regulation and system voltage drops are critical. When using the p-channel MOSFET, quiescent current is reduced to 0.75 µA to decrease the demand on the standby power supply. The MOSFETs in the TPS2104 and TPS2105 do not have the parasitic diodes, typically found in discrete MOSFETs, thereby preventing back-flow current when the switch is off.
TPS2104
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IN1 |
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OUT |
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GND |
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GND |
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IN2 |
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TPS2105 |
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DBV PACKAGE |
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D PACKAGE |
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IN2 |
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EN |
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IN1 |
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GND |
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OUT |
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GND |
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EN |
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NC |
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IN2 |
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NC |
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NC ± No internal connection |
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright 2000, Texas Instruments Incorporated
POST OFFICE BOX 655303 •DALLAS, TEXAS 75265 |
1 |
TPS2104, TPS2105
VAUX POWER-DISTRIBUTION SWITCHES
SLVS235A ± SEPTEMBER 1999 ± REVISED APRIL 2000
Selection Guide, VAUX Power-Distribution Switches
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OPERATING |
MAXIMUM INPUT |
MAXIMUM INPUT |
AMBIENT TEMPERATURE |
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DEVICE |
ENABLE |
VOLTAGE RANGE |
CURRENT, IN1 |
CURRENT, IN2 |
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RANGE (°C) |
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(V) |
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TPS2100 |
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2.7 to 4 |
500 |
10 |
± 40 to 70 |
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EN |
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TPS2101 |
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EN |
2.7 to 4 |
500 |
10 |
± 40 to 70 |
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TPS2102 |
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2.7 to 4 |
500 |
100 |
± 40 to 70 |
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EN |
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TPS2103 |
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EN |
2.7 to 4 |
500 |
100 |
± 40 to 70 |
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TPS2104 |
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2.7 to 5.5 |
500 |
100 |
± 40 to 85 |
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EN |
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TPS2105 |
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EN |
2.7 to 5.5 |
500 |
100 |
± 40 to 85 |
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AVAILABLE OPTIONS FOR TPS2104, TPS2105
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PACKAGED DEVICES |
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TA |
DEVICE |
ENABLE |
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SOT-23-5 |
SOIC-8 |
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(DBV)² |
(D) |
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TPS2104 |
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TSP2104DBV² |
TPS2104D |
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±40°C to 85°C |
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EN |
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TPS2105 |
EN |
TPS2105DBV² |
TPS2105D |
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Both packages are available left-end taped and reeled. Add an R suffix to the D device type (e.g., TPS2105DR).
²Add T (e.g., TPS2104DBVT) to indicate tape and reel at order quantity of 250 parts. Add R (e.g., TPS2104DBVR) to indicate tape and reel at order quantity of 3000 parts.
Function Tables
TPS2104
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VIN1 |
VIN2 |
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EN |
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OUT |
0 V |
0 V |
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XX |
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GND |
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0 V |
5 V |
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L |
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GND |
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5 V |
0 V |
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L |
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VIN1 |
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5 V |
5 V |
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L |
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VIN1 |
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0 V |
5 V |
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H |
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VIN2 |
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5 V |
0 V |
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H |
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VIN2 |
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5 V |
5 V |
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H |
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VIN2 |
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XX = don't care
TPS2105
VIN1 |
VIN2 |
EN |
OUT |
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0 V |
0 V |
XX |
GND |
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0 V |
5 V |
H |
GND |
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5 V |
0 V |
H |
VIN1 |
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5 V |
5 V |
H |
VIN1 |
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0 V |
5 V |
L |
VIN2 |
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5 V |
0 V |
L |
VIN2 |
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5 V |
5 V |
L |
VIN2 |
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2 |
POST OFFICE BOX 655303 •DALLAS, TEXAS 75265 |
TPS2104, TPS2105
VAUX POWER-DISTRIBUTION SWITCHES
SLVS235A ± SEPTEMBER 1999 ± REVISED APRIL 2000
TPS2104 functional block diagram
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SW1 |
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IN1 |
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250 mΩ |
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OUT |
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Pullup |
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Charge |
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Pump |
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Circuit |
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Discharge |
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VCC |
Circuit |
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EN |
Driver |
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Select |
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IN2 
SW2
1.3 Ω
GND
Driver
TPS2105 functional block diagram
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SW1 |
IN1 |
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250 mΩ |
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OUT |
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Charge |
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Pump |
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Discharge |
EN |
VCC |
Circuit |
Select |
Driver |
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IN2
SW2
1.3 Ω
Pulldown
GND
Circuit
Driver
POST OFFICE BOX 655303 •DALLAS, TEXAS 75265 |
3 |
TPS2104, TPS2105
VAUX POWER-DISTRIBUTION SWITCHES
SLVS235A ± SEPTEMBER 1999 ± REVISED APRIL 2000
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Terminal Functions |
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TERMINAL |
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NO. |
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DESCRIPTION |
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NAME |
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I/O |
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TPS2104 |
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TPS2105 |
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DBV |
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D |
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DBV |
D |
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EN |
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1 |
3 |
I |
Active-high enable for IN1-OUT switch |
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EN |
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1 |
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3 |
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I |
Active-low enable for IN1-OUT switch |
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GND |
2 |
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Ground |
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IN1² |
5 |
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5 |
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Main input voltage, NMOS drain (250 mΩ), require 0.22 µF bypass |
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IN2² |
3 |
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1 |
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1 |
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Auxilliary input voltage, PMOS drain (1.3 Ω), require 0.22 µF bypass |
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OUT |
4 |
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7, 8 |
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Power switch output |
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NC |
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² Unused INx should not be grounded.
detailed description
power switches n-channel MOSFET
The IN1-OUT n-channel MOSFET power switch has a typical on-resistance of 250 mΩ at 5-V input voltage, and is configured as a high-side switch.
p-channel MOSFET
The IN2-OUT p-channel MOSFET power switch has a typical on-resistance of 1.3 Ω at 5-V input voltage and is configured as a high-side switch. When operating, the p-channel MOSFET quiescent current is reduced to typically 0.75 µA.
charge pump
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires very little supply current.
driver
The driver controls the gate voltage of the IN1-OUT and IN2-OUT power switches. To limit large current surges and reduce the associated electromagnetic interference (EMI) produced, the drivers incorporate circuitry that controls the rise times and fall times of the output voltage.
enable
The logic enable will turn on the IN2-OUT power switch when a logic high is present on EN (TPS2104) or logic low is present on EN (TPS2105). A logic low input on EN (TPS2104) or logic high on EN (TPS2105) restores bias to the drive and control circuits and turns on the IN1-OUT power switch. The enable input is compatible with both TTL and CMOS logic levels.
4 |
POST OFFICE BOX 655303 •DALLAS, TEXAS 75265 |
TPS2104, TPS2105
VAUX POWER-DISTRIBUTION SWITCHES
SLVS235A ± SEPTEMBER 1999 ± REVISED APRIL 2000
absolute maximum ratings over operating free-air temperature (unless otherwise noted)²
Input voltage range, VI(IN1) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . ±0.3 V to 6 V |
Input voltage range, VI(IN2) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . ±0.3 V to 6 V |
Input voltage range, VI at EN or EN (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . ±0.3 V to 6 V |
Output voltage range, VO (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . ±0.3 V to 6 V |
Continuous output current, IO(IN1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . 700 mA |
Continuous output current, IO(IN2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . 140 mA |
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
See dissipation rating table |
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . ±40°C to 125°C |
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . ±65°C to 150°C |
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . |
. . . . . . . . . . . . . . . . . 260°C |
Electrostatic discharge (ESD) protection: Human body model . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . . 2 kV |
Machine model . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . 200 V |
Charged device model . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . 750 V |
²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to GND.
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DISSIPATION RATING TABLE |
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PACKAGE |
TA < 25°C |
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DERATING FACTOR |
TA = 70°C |
TA = 85°C |
POWER RATING |
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ABOVE TA = 25°C |
POWER RATING |
POWER RATING |
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DBV |
309 mW |
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3.1 mW/°C |
170 mW |
123 mW |
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D |
568 mW |
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5.7 mW/°C |
313 mW |
227 mW |
recommended operating conditions
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MIN |
MAX |
UNIT |
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Input voltage, VI(INx) |
2.7 |
5.5 |
V |
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Input voltage, VI at |
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0 |
5.5 |
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EN |
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Continuous output current, IO(IN1) |
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500 |
mA |
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Continuous output current, IO(IN2) |
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100³ |
mA |
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Operating virtual junction temperature, TJ |
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125 |
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³The device can deliver up to 220 mA at IO(IN2). However, operation at the higher current levels will result in greater voltage drop across the device, and greater voltage droop when switching between IN1 and IN2.
electrical characteristics over recommended operating junction temperature range, VI(IN1) = V(IN2) = 5 V, IO = rated current (unless otherwise noted)
power switch
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MIN TYP |
MAX |
UNIT |
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CONDITIONS² |
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IN1-OUT |
TJ = 25°C |
250 |
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mΩ |
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rDS(on) |
On-state resistance |
TJ = 125°C |
350 |
435 |
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IN2-OUT |
TJ = 25°C |
1.3 |
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Ω |
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TJ = 125°C |
1.5 |
2.4 |
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² Pulse-testing techniques maintain junction temperature close to ambient termperature; thermal effects must be taken into account separately.
POST OFFICE BOX 655303 •DALLAS, TEXAS 75265 |
5 |
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