Texas Instruments TPS2102D, TPS2103DR, TPS2103DBVT, TPS2103DBVR, TPS2103D Datasheet

TPS2102, TPS2103

VAUX POWER-DISTRIBUTION SWITCHES

SLVS234A ± SEPTEMBER 1999 ± REVISED APRIL 2000

features

DDual-Input, Single-Output MOSFET Switch With No Reverse Current Flow (No Parasitic Diodes)

DIN1 . . . 250-mΩ, 500-mA N-Channel; 14-µA Supply Current

DIN2 . . . 1.3-Ω, 100-mA P-Channel; 0.75-µA Supply Current (VAUX Mode)

DAdvanced Switch Control Logic

DCMOS and TTL Compatible Enable Input

DControlled Rise, Fall, and Transition Times

D2.7 V to 4 V Operating Range

DSOT-23-5 and SOIC-8 Package

D±40°C to 70°C Ambient Temperature Range

D2-kV Human Body Model, 750-V Charged Device Model, 200-V Machine-Model ESD Protection

typical applications

DNotebook and Desktop PCs

DCell phone, Palmtops, and PDAs

DBattery Management

3.3V VCC

3.3V VAUX

D3 or PME Status Control Signal

TPS2102	Controller
IN1
3.3 V	(CardBus,
IN2	1394,
	PCI,
EN	et al.)
Holdup
Capacitor

Figure 1. Typical Dual-Input Single-Output

Application

description

The TPS2102 and TPS2103 are dual-input, single-output power switches designed to provide uninterrupted output voltage when transitioning between two independent power supplies. Both devices combine one n-channel (250 mΩ) and one p-channel (1.3 Ω) MOSFET with a single output. The p-channel MOSFET (IN2) is used with auxiliary power supplies that deliver lower current for standby modes. The n-channel MOSFET (IN1) is used with a main power supply that delivers higher current required for normal operation. Low on-resistance makes the n-channel the ideal path for higher main supply current when power-supply regulation and system voltage drops are critical. When using the p-channel MOSFET, quiescent current is reduced to 0.75 µA to decrease the demand on the standby power supply. The MOSFETs in the TPS2102 and TPS2103 do not have the parasitic diodes, typically found in discrete MOSFETs, thereby preventing back-flow current when the switch is off.

		TPS2102
	DBV PACKAGE	D PACKAGE
		(TOP VIEW)
	(TOP VIEW)

PCI Bus	VAUX		3.3 V
VGA		TPS210x
	VCC	D3-STAT
PCI12xx / PCI14xx
CardBus Controller

Figure 2. VAUX CardBus Implementation

									IN1	IN2						1	8			OUT
	EN				1	5
										GND						2	7			OUT
GND					2
IN2					3	4			OUT		EN					3	6			NC
										NC						4	5			IN1
									TPS2103
			DBV PACKAGE													D PACKAGE
				(TOP VIEW)												(TOP VIEW)
										IN2										OUT
EN					1	5			IN1							1	8
										GND						2	7			OUT
GND					2
										EN						3	6			NC
IN2					3	4			OUT
										NC						4	5			IN1
NC ± No internal connection

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 2000, Texas Instruments Incorporated

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1

TPS2102, TPS2103

VAUX POWER-DISTRIBUTION SWITCHES

SLVS234A ± SEPTEMBER 1999 ± REVISED APRIL 2000

Selection Guide, VAUX Power-Distribution Switches

						OPERATING	MAXIMUM INPUT	MAXIMUM INPUT	AMBIENT
DEVICE	ENABLE					VOLTAGE RANGE	CURRENT, IN1	CURRENT, IN2	TEMPERATURE RANGE
						(V)	(mA)	(mA)	(°C)
TPS2100						2.7 to 4	500	10	± 40 to 70
			EN
TPS2101		EN				2.7 to 4	500	10	± 40 to 70
TPS2102						2.7 to 4	500	100	± 40 to 70
		EN
TPS2103		EN				2.7 to 4	500	100	± 40 to 70
TPS2104						2.7 to 5.5	500	100	± 40 to 85
		EN
TPS2105		EN				2.7 to 5.5	500	100	± 40 to 85

AVAILABLE OPTIONS FOR TPS2102, TPS2103

						PACKAGED DEVICES
	TA	DEVICE	ENABLE
						SOT-23-5	SOIC-8
						(DBV)²	(D)
		TPS2102				TSP2102DBV²	TPS2102D
	±40°C to 70°C			EN
		TPS2103	EN			TPS2103DBV²	TPS2103D

Both packages are available left-end taped and reeled. Add an R suffix to the D device type (e.g., TPS2103DR).

²Add T (e.g., TPS2102DBVT) to indicate tape and reel at order quantity of 250 parts. Add R (e.g., TPS2102DBVR) to indicate tape and reel at order quantity of 3000 parts.

Function Tables

TPS2102

VIN1	VIN2		EN		OUT
0 V	0 V		XX		GND
0 V	3.3 V		L		GND
3.3 V	0 V		L		VIN1
3.3 V	3.3 V		L		VIN1
0 V	3.3 V		H		VIN2
3.3 V	0 V		H		VIN2
3.3 V	3.3 V		H		VIN2

XX = don't care

TPS2103

VIN1	VIN2	EN	OUT
0 V	0 V	XX	GND
0 V	3.3 V	H	GND
3.3 V	0 V	H	VIN1
3.3 V	3.3 V	H	VIN1
0 V	3.3 V	L	VIN2
3.3 V	0 V	L	VIN2
3.3 V	3.3 V	L	VIN2

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TPS2102, TPS2103

VAUX POWER-DISTRIBUTION SWITCHES

SLVS234A ± SEPTEMBER 1999 ± REVISED APRIL 2000

TPS2102 functional block diagram

			SW1
	IN1		250 mΩ
			OUT
	Pullup		Charge
			Pump
	Circuit
			Discharge
		VCC	Circuit
	EN		Driver
		Select

IN2 SW2

1.3 Ω

GND

Driver

TPS2103 functional block diagram

		SW1
IN1		250 mΩ
		OUT
		Charge
		Pump
		Discharge
EN	VCC	Circuit
	Select	Driver

IN2

SW2

1.3 Ω

Pulldown

GND

Circuit

Driver

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3

TPS2102, TPS2103

VAUX POWER-DISTRIBUTION SWITCHES

SLVS234A ± SEPTEMBER 1999 ± REVISED APRIL 2000

									Terminal Functions
				TERMINAL
						NO.				DESCRIPTION
NAME									I/O
			TPS2102				TPS2103
			DBV		D		DBV	D
	EN						1	3	I	Active-high enable for IN1-OUT switch
	EN		1		3				I	Active-low enable for IN1-OUT switch
GND			2		2		2	2	I	Ground
IN1²			5		5		5	5	I	Main Input voltage, NMOS drain (250 mΩ), require 0.22 µF bypass
IN2²			3		1		3	1	I	Auxilliary input voltage, PMOS drain (1.3 Ω), require 0.22 µF bypass
OUT			4		7, 8		4	7, 8	O	Power switch output
NC					4, 6			4, 6		No connection

² Unused INx should not be grounded.

detailed description

power switches n-channel MOSFET

The IN1-OUT n-channel MOSFET power switch has a typical on-resistance of 250 mΩ at 3.3-V input voltage, and is configured as a high-side switch.

p-channel MOSFET

The IN2-OUT p-channel MOSFET power switch has a typical on-resistance of 1.3 Ω at 3.3-V input voltage and is configured as a high-side switch. When operating, the p-channel MOSFET quiescent current is reduced to typically 0.75 µA.

charge pump

An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires very little supply current.

driver

The driver controls the gate voltage of the IN1-OUT and IN2-OUT power switches. To limit large current surges and reduce the associated electromagnetic interference (EMI) produced, the drivers incorporate circuitry that controls the rise times and fall times of the output voltage.

enable

The logic enable will turn on the IN2-OUT power switch when a logic high is present on EN (TPS2102) or logic low is present on EN (TPS2103). A logic low input on EN (TPS2102) or logic high on EN (TPS2103) restores bias to the drive and control circuits and turns on the IN1-OUT power switch. The enable input is compatible with both TTL and CMOS logic levels.

the VAUX application for CardBus controllers

The PC Card specification requires the support of VAUX to the CardBus controller as well as to the PC Card sockets. Both are 3.3-V requirements; however the CardBus controller's current demand from the VAUX supply is limited to 10 µA, whereas the PC Card may consume as much as 200 mA. In either implementation, if support of a wake-up event is required, the controller and the socket will transition from the 3.3-V VCC rail to the 3.3-V VAUX rail when the equipment moves into a low power mode such as D3. The transition from VCC to VAUX needs to be seamless in order to maintain all memory and register information in the system. If VAUX is not supported, the system will lose all register information when it transitions to the D3 state.

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TPS2102, TPS2103

VAUX POWER-DISTRIBUTION SWITCHES

SLVS234A ± SEPTEMBER 1999 ± REVISED APRIL 2000

absolute maximum ratings over operating free-air temperature (unless otherwise noted)²

Input voltage range, VI(IN1) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . ±0.3 V to 5 V
Input voltage range, VI(IN2) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . ±0.3 V to 5 V
Input voltage range, VI at EN or EN (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . ±0.3 V to 5 V
Output voltage range, VO (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . ±0.3 V to 5 V
Continuous output current, IO(IN1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . 700 mA
Continuous output current, IO(IN2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . 140 mA
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	See dissipation rating table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . ±40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . ±65°C to 150°C
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . .	. . . . . . . . . . . . . . . . . 260°C
Electrostatic discharge (ESD) protection: Human body model . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . 2 kV
Machine model . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . 200 V
Charged device model . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . 750 V

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to GND.

		DISSIPATION RATING TABLE
PACKAGE	TA < 25°C		DERATING FACTOR	TA = 70°C	TA = 85°C
	POWER RATING		ABOVE TA = 25°C	POWER RATING	POWER RATING
DBV	309 mW		3.1 mW/°C	170 mW	123 mW
D	568 mW		5.7 mW/°C	313 mW	227 mW

recommended operating conditions

			MIN	MAX	UNIT
Input voltage, VI(INx)			2.7	4	V
Input voltage, VI at		and EN	0	4	V
	EN
Continuous output current, IO(IN1)				500	mA
Continuous output current, IO(IN2)				100³	mA
Operating virtual junction temperature, TJ			± 40	85	°C

³The device can deliver up to 220 mA at IO(IN2). However, operation at the higher current levels will result in greater voltage drop across the device, and greater voltage droop when switching between IN1 and IN2.

electrical characteristics over recommended operating junction temperature range, VI(IN1) = V(IN2) = 3.3 V, IO = rated current (unless otherwise noted)

power switch

		PARAMETER		TEST	MIN TYP	MAX	UNIT
				CONDITIONS²
			IN1-OUT	TJ = 25°C	250		mΩ
	rDS(on)	On-state resistance		TJ = 85°C	300	375
			IN2-OUT	TJ = 25°C	1.3		Ω
				TJ = 85°C	1.5	2.1

² Pulse-testing techniques maintain junction temperature close to ambient termperature; thermal effects must be taken into account separately.

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5

TPS2102, TPS2103

VAUX POWER-DISTRIBUTION SWITCHES

SLVS234A ± SEPTEMBER 1999 ± REVISED APRIL 2000

electrical characteristics over recommended operating junction temperature range, VI(IN1) = V(IN2) = 3.3 V, IO = rated current (unless otherwise noted) (continued)

enable input (EN and EN)

		PARAMETER	TEST CONDITIONS						MIN	TYP MAX	UNIT
	VIH	High-level input voltage	2.7 V ≤ VI(INx) ≤ 4 V						2		V
	VIL	Low-level input voltage	2.7 V ≤ VI(INx) ≤ 4 V							0.8	V
	II	Input current	TPS2102		EN	= 0 V or	EN	= VI(INx)	±0.5	0.5	A
			TPS2103	EN = 0 V or EN = VI(INx)					±0.5	0.5	A

supply current

PARAMETER

TEST CONDITIONS

MIN

TYP MAX

UNIT

= H,

TJ = 25°C

0.75

EN

A

TPS2102

IN2 selected

±40°C ≤ TJ ≤

85°C

1.5

= L,

TJ = 25°C

14

EN

A

II

Supply current

IN1 selected

±40°C ≤ TJ ≤

85°C

24

EN = L,

TJ = 25°C

0.75

A

IN2 selected

° ≤

TJ

≤

°

1.5

TPS2103

±40 C

85 C

EN = H,

TJ = 25°C

14

A

IN1 selected

° ≤

TJ

≤

°

24

±40 C

85 C

switching characteristics, T		= 25°C, V		I(IN1)		= V	I(IN2)	= 3.3 V (unless otherwise noted)²
	J
	PARAMETER						TEST CONDITIONS²			MIN TYP MAX	UNIT
								CL = 1 F,	IL = 500 mA	440
			IN1-OUT			VI(IN2) = 0		CL = 10 F,	IL = 500 mA	440
tr	Output rise time							CL = 1 F,	IL = 100 mA	370	s
								CL = 1 F,	IL = 100 mA	4.6
			IN2-OUT			VI(IN1) = 0		CL = 10 F,	IL = 100 mA	50
								CL = 1 F,	IL = 10 mA	4.6
								CL = 1 F,	IL = 500 mA	5
			IN1-OUT			VI(IN2) = 0		CL = 10 F,	IL = 500 mA	100
tf	Output fall time							CL = 1 F,	IL = 100 mA	13	s
								CL = 1 F,	IL = 100 mA	68
			IN2-OUT			VI(IN1) = 0		CL = 10 F,	IL = 100 mA	680
								CL = 1 F,	IL = 10 mA	720
tPLH	Propagation delay time, low-to-high output		IN1-OUT			VI(IN2) = 0		CL = 10 F,	IL = 100 mA	80	s
			IN2-OUT			VI(IN1) = 0				2
tPHL	Propagation delay time, high-to-low output		IN1-OUT			VI(IN2) = 0		CL = 10 F,	IL = 100 mA	3	s
			IN2-OUT			VI(IN1) = 0				40

² All timing parameters refer to Figure 3.

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