Texas Instruments TPS2831PWP, TPS2831PWPR, TPS2831DR, TPS2830PWPR, TPS2831D Datasheet

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TPS2830, TPS2831 FAST SYNCHRONOUS-BUCK MOSFET DRIVERS WITH DEADTIME CONTROL

SLVS196B ± JANUARY1999 ± REVISED SEPTEMBER 1999

DFloating Bootstrap or Ground-Reference High-Side Driver

DActive Deadtime Control

D50-ns Max Rise/Fall Times and 100-ns Max Propagation Delay Ð 3-nF Load

DIdeal for High-Current Single or Mutiphase Applications

D2.4-A Typ Peak Output Current

D4.5-V to 15-V Supply Voltage Range

DInternal Schottky Bootstrap Diode

DSYNC Control for Synchronous or Nonsynchronous Operation

D OR PWP PACKAGE

(TOP VIEW)

ENABLE

 

 

1

14

 

 

BOOT

 

 

 

 

 

 

 

 

IN

 

2

13

 

 

NC

 

 

 

 

 

 

 

 

CROWBAR

 

3

12

 

 

HIGHDR

 

 

 

 

NC

 

4

11

 

 

BOOTLO

 

 

 

 

SYNC

 

5

10

 

 

LOWDR

 

 

 

 

 

 

 

 

DT

 

6

9

 

 

NC

 

 

 

 

 

 

 

 

PGND

 

7

8

 

 

VCC

 

 

 

 

 

 

 

 

NC ± No internal connection

DCROWBAR for OVP, Protects Against Faulted High-Side Power FETs

DLow Supply Current . . . 3-mA Typ

D±40°C to 125°C Junction-Temperature Operating Range

description

The TPS2830 and TPS2831 are MOSFET drivers for synchronous-buck power stages. These devices are ideal for designing a high-performance power supply using a switching controller that does not include suitable MOSFET drivers on the chip. The drivers are designed to deliver 2.4-A peak currents into large capacitive loads. Higher currents can be controlled by using multiple drivers in a multiphase configuration. The high-side driver can be configured as a ground-reference driver or as a floating bootstrap driver. An adaptive dead-time control circuit eliminates shoot-through currents through the main power FETs during switching transitions, and provides high efficiency for the buck regulator. The TPS2830/31 drivers have additional control functions: ENABLE, SYNC, and CROWBAR. Both drivers are off when ENABLE is low. The driver is configured as a nonsynchronous-buck driver when SYNC is low. The CROWBAR function turns on the low-side power FET, overriding the IN signal, for over-voltage protection against faulted high-side power FETs.

The TPS2830 has a noninverting input. The TPS2831 has an inverting input. The TPS2830/31 drivers are available in 14-terminal SOIC and TSSOP packages and operate over a junction temperature range of ±40°C to 125°C.

AVAILABLE OPTIONS

 

PACKAGED DEVICES

TJ

 

 

SOIC

TSSOP

 

(D)

(PWP)

 

 

 

±40°C to 125°C

TPS2830D

TPS2830PWP

TPS2831D

TPS2831PWP

 

 

 

 

The D and PWP packages are available taped and reeled. Add R suffix to device type (e.g., TPS2830DR)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1999, Texas Instruments Incorporated

POST OFFICE BOX 655303 DALLAS, TEXAS 75265

1

Texas Instruments TPS2831PWP, TPS2831PWPR, TPS2831DR, TPS2830PWPR, TPS2831D Datasheet

TPS2830, TPS2831

FAST SYNCHRONOUS-BUCK MOSFET DRIVERS

WITH DEADTIME CONTROL

SLVS196B ± JANUARY1999 ± REVISED SEPTEMBER 1999

functional block diagram

 

 

8

 

 

 

VCC

 

 

 

14

 

 

 

BOOT

 

(TPS2830 Only)

 

12

 

 

 

 

 

 

HIGHDR

 

 

 

11

 

2

 

BOOTLO

 

 

 

 

IN

 

 

 

(TPS2831 Only)

 

VCC

 

 

 

 

 

 

10

LOWDR

 

 

 

6

 

7

PGND

 

 

DT

 

 

 

ENABLE

1

5

 

 

 

 

 

SYNC

 

 

 

3

 

 

 

CROWBAR

 

 

 

 

Terminal Functions

 

 

 

TERMINAL

I/O

DESCRIPTION

NAME

NO.

 

 

 

 

 

 

BOOT

14

I

Bootstrap terminal. A ceramic capacitor is connected between BOOT and BOOTLO terminals to develop

 

 

 

the floating bootstrap voltage for the high-side MOSFET. The capacitor value is typically between 0.1 µF

 

 

 

and 1 µF. A 1-MΩ resistor should be connected across the bootstrap capacitor to provide a discharge path

 

 

 

when the driver has been powered down.

 

 

 

 

BOOTLO

11

O

This terminal connects to the junction of the high-side and low-side MOSFETs.

 

 

 

 

CROWBAR

3

I

CROWBAR can to be driven by an external OVP circuit to protect against a short across the high-side

 

 

 

MOSFET. If CROWBAR is driven low, the low-side driver will be turned on and the high-side driver will be

 

 

 

turned off, independent of the status of all other control terminals.

 

 

 

 

DT

6

I

Deadtime control terminal. Connect DT to the junction of the high-side and low-side MOSFETs.

 

 

 

 

ENABLE

1

I

If ENABLE is low, both drivers are off.

 

 

 

 

HIGHDR

12

O

Output drive for the high-side power MOSFET

 

 

 

 

IN

2

I

Input signal to the MOSFET drivers (noninverting input for the TPS2830; inverting input for the TPS2831).

 

 

 

 

LOWDR

10

O

Output drive for the low-side power MOSFET

 

 

 

 

NC

4, 9, 13

 

 

 

 

 

 

PGND

7

 

Power ground. Connect to the FET power ground

 

 

 

 

SYNC

5

I

Synchronous Rectifier Enable terminal. If SYNC is low, the low-side driver is always off; If SYNC is high,

 

 

 

the low-side driver provides gate drive to the low-side MOSFET.

 

 

 

 

VCC

8

I

Input supply. Recommended that a 1-µF capacitor be connected from VCC to PGND.

2

POST OFFICE BOX 655303 DALLAS, TEXAS 75265

TPS2830, TPS2831

FAST SYNCHRONOUS-BUCK MOSFET DRIVERS

WITH DEADTIME CONTROL

SLVS196B ± JANUARY1999 ± REVISED SEPTEMBER 1999

detailed description

low-side driver

The low-side driver is designed to drive low Rds(on) N-channel MOSFETs. The current rating of the driver is 2 A, source and sink.

high-side driver

The high-side driver is designed to drive low Rds(on) N-channel MOSFETs. The current rating of the driver is 2 A, source and sink. The high-side driver can be configured as a GND-reference driver or as a floating bootstrap driver. The internal bootstrap diode is a Schottky, for improved drive efficiency. The maximum voltage that can be applied from BOOT to ground is 30 V.

deadtime (DT) control²

Deadtime control prevents shoot through current from flowing through the main power FETs during switching transitions by controlling the turn-on times of the MOSFET drivers. The high-side driver is not allowed to turn on until the gate drive voltage to the low-side FET is low, and the low-side driver is not allowed to turn on until the voltage at the junction of the power FETs (Vdrn) is low; the DT terminal connects to the junction of the power FETs.

ENABLE²

The ENABLE terminal enables the drivers. When enable is low, the output drivers are low.

IN²

The IN terminal is the input control signal for the drivers. The TPS2830 has a noninverting input; the TPS2831 has an inverting input.

SYNC²

The SYNC terminal controls whether the drivers operate in synchronous or nonsynchronous mode. In synchronous mode, the low-side FET is operated as a synchronous rectifier. In nonsynchronous mode, the low-side FET is always off.

CROWBAR²

The CROWBAR terminal overrides the normal operation of the driver. When the CROWBAR terminal is low, the low-side FET turns on to act as a clamp, protecting the output voltage of the dc/dc converter against over voltages due to a short across the high-side FET. VIN should be fused to protect the low-side FET.

² High-level input voltages on ENABLE, SYNC, CROWBAR, IN, and DT must be greater than or equal to VCC.

POST OFFICE BOX 655303 DALLAS, TEXAS 75265

3

TPS2830, TPS2831

FAST SYNCHRONOUS-BUCK MOSFET DRIVERS

WITH DEADTIME CONTROL

SLVS196B ± JANUARY1999 ± REVISED SEPTEMBER 1999

absolute maximum ratings over operating free-air temperature (unless otherwise noted)²

Supply voltage range, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . ±0.3 V to 16 V

Input voltage range: BOOT to PGND (high-side driver ON) . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . ±0.3 V to 30 V

BOOTLO to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . ±0.3 V to 16 V

BOOT to BOOTLO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . ±0.3 V to 16 V

ENABLE, SYNC, and CROWBAR (see Note 2) . . . . . . . . .

. . . . . . . . . . . . ±0.3 V to 16 V

IN (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . ±0.3 V to 16 V

DT (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . ±0.3 V to 30 V

Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

See Dissipation Rating Table

Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . ±40°C to 125°C

Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . ±65°C to 150°C

Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . .

. . . . . . . . . . . . . . . . . . . 260°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. Unless otherwise specified, all voltages are with respect to PGND.

2. High-level input voltages on the ENABLE, SYNC, CROWBAR, IN, and DT terminals must be greater than or equal to VCC.

 

 

DISSIPATION RATING TABLE

 

PACKAGE

TA 25°C

DERATING FACTOR

TA = 70°C

TA = 85°C

POWER RATING

ABOVE TA = 25°C

POWER RATING

POWER RATING

 

D

760 mW

7.6 mW/°C

420 mW

305 mW

PWP

2400 mW

25 mW/°C

1275 mW

900 mW

recommended operating conditions

 

 

MIN NOM

MAX

UNIT

 

 

 

 

 

Supply voltage, VCC

4.5

15

V

Input voltage

BOOT to PGND

4.5

28

V

electrical characteristics over recommended operating virtual junction temperature range, VCC = 6.5 V, ENABLE = High, CL = 3.3 nF (unless otherwise noted)

supply current

 

PARAMETER

TEST CONDITIONS

MIN

TYP MAX

UNIT

 

 

 

 

 

 

 

VCC

Supply voltage range

 

 

4.5

15

V

 

 

VENABLE = LOW,

VCC =15 V

 

100

A

 

 

VENABLE = HIGH,

VCC =15 V

 

0.1

 

V

Quiescent current

VENABLE = HIGH,

VCC =12 V,

 

 

 

CC

 

fSWX = 200 kHz,

BOOTLO grounded,

 

 

mA

 

 

 

3

 

 

CHIGHDR = 50 pF,

CLOWDR = 50 pF,

 

 

 

 

 

 

 

 

 

See Note 3

 

 

 

 

NOTE 3: Ensured by design, not production tested.

4

POST OFFICE BOX 655303 DALLAS, TEXAS 75265

TPS2830, TPS2831

FAST SYNCHRONOUS-BUCK MOSFET DRIVERS

WITH DEADTIME CONTROL

SLVS196B ± JANUARY1999 ± REVISED SEPTEMBER 1999

electrical characteristics over recommended operating virtual junction temperature range, VCC = 6.5 V, ENABLE = High, CL = 3.3 nF (unless otherwise noted) (continued)

output drivers

 

PARAMETER

 

TEST CONDITIONS

MIN

TYP MAX

UNIT

 

 

 

 

 

 

 

 

 

High-side sink

 

Duty cycle < 2%,

VBOOT ± VBOOTLO = 4.5 V, VHIGHDR = 4 V

0.7

1.1

 

 

 

tpw < 100 µs

VBOOT ± VBOOTLO = 6.5 V, VHIGHDR = 5 V

1.1

1.5

A

 

(see Note 4)

 

 

 

 

(see Note 3)

VBOOT ± VBOOTLO = 12 V, VHIGHDR = 10.5 V

2

2.4

 

 

 

 

 

 

 

High-side

 

Duty cycle < 2%,

VBOOT ± VBOOTLO = 4.5 V, VHIGHDR = 0.5V

1.2

1.4

 

 

source

 

tpw < 100 µs

VBOOT ± VBOOTLO = 6.5 V, VHIGHDR = 1.5 V

1.3

1.6

A

Peak output-

(see Note 4)

 

(see Note 3)

VBOOT ± VBOOTLO = 12 V,

VHIGHDR = 1.5 V

2.3

2.7

 

 

 

 

 

current

Low-side sink

 

Duty cycle < 2%,

VCC = 4.5 V,

VLOWDR = 4 V

1.3

1.8

 

 

 

 

 

 

tpw < 100 µs

VCC = 6.5 V,

VLOWDR = 5 V

2

2.5

A

 

(see Note 4)

 

 

 

 

(see Note 3)

VCC = 12 V,

VLOWDR = 10.5 V

3

3.5

 

 

 

 

 

 

 

Low-side

 

Duty cycle < 2%,

VCC = 4.5 V,

VLOWDR = 0.5V

1.4

1.7

 

 

source

 

tpw < 100 µs

VCC = 6.5 V,

VLOWDR = 1.5 V

2

2.4

A

 

(see Note 4)

 

(see Note 3)

VCC = 12 V,

VLOWDR = 1.5 V

2.5

3

 

 

 

 

 

 

 

 

 

 

VBOOT ± VBOOTLO = 4.5 V, VHIGHDR = 0.5 V

 

5

 

 

High-side sink (see Note 4)

VBOOT ± VBOOTLO = 6.5 V, VHIGHDR = 0.5 V

 

5

Ω

 

 

 

 

VBOOT ± VBOOTLO = 12 V,

VHIGHDR = 0.5 V

 

5

 

 

 

 

 

VBOOT ± VBOOTLO = 4.5 V, VHIGHDR = 4 V

 

45

 

 

High-side source (see Note 4)

VBOOT ± VBOOTLO = 6.5 V, VHIGHDR = 6 V

 

45

Ω

Output

 

 

 

VBOOT ± VBOOTLO = 12 V,

VHIGHDR =11.5 V

 

45

 

resistance

 

 

 

VDRV = 4.5 V,

VLOWDR = 0.5 V

 

9

 

 

Low-side sink (see Note 4)

VDRV = 6.5 V

VLOWDR = 0.5 V

 

7.5

Ω

 

 

 

 

VDRV = 12 V,

VLOWDR = 0.5 V

 

6

 

 

 

 

 

VDRV = 4.5 V,

VLOWDR = 4 V

 

45

 

 

Low-side source (see Note 4)

VDRV = 6.5 V,

VLOWDR = 6 V

 

45

Ω

 

 

 

 

VDRV = 12 V,

VLOWDR = 11.5 V

 

45

 

NOTES: 3. Ensured by design, not production tested.

4.The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance is the Rds(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.

deatime control

 

PARAMETER

TEST CONDITIONS

MIN TYP MAX

UNIT

 

 

 

 

 

LOWDR

High-level input voltage

Over the VCC range (see Note 3)

2

V

 

 

 

Low-level input voltage

1

V

 

 

 

 

 

 

 

DT

High-level input voltage

Over the VCC range

2

V

 

 

 

Low-level input voltage

1

V

 

 

NOTE 3: Ensured by design, not production tested.

 

 

 

digital control terminals

PARAMETER

TEST CONDITIONS

MIN

TYP MAX

UNIT

 

 

 

 

 

High-level input voltage

Over the VCC range

2

 

V

 

 

 

 

Low-level input voltage

 

1

V

 

 

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5

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