Texas Instruments TPA711EVM, TPA711MSOPEVM, TPA711DR, TPA711DGNR, TPA711DGN Datasheet

TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER

SLOS230B ± NOVEMBER 1998 ± REVISED MARCH 2000

D Fully Specified for 3.3-V and 5-V Operation

D BTL to SE Mode Control

D Wide Power Supply Compatibility

D Integrated Depop Circuitry

2.5 V ± 5.5 V

D Thermal and Short-Circuit Protection

D

Output Power

D Surface-Mount Packaging

± 700 mW at VDD = 5 V, BTL, RL = 8 Ω

± SOIC

± 85 mW at VDD = 5 V, SE, RL = 32 Ω

± PowerPAD MSOP

± 250 mW at VDD = 3.3 V, BTL, RL = 8 Ω

± 37 mW at VDD = 3.3 V, SE, RL = 32 Ω

D OR DGN PACKAGE

D

Shutdown Control

(TOP VIEW)

± IDD = 7 µA at 3.3 V

SHUTDOWN

VO±

1

8

± IDD = 50 µA at 5 V

BYPASS

2

7

GND

description

SE/BTL

3

6

VDD

IN

4

5

VO+

The TPA711 is a bridge-tied load (BTL) or single-ended (SE) audio power amplifier devel-

oped especially for low-voltage applicationswhere internal speakers and external earphone operation are required. Operating with a 3.3-V supply, the TPA711 can deliver 250-mW of continuous power into a BTL 8-Ω load at less than 0.6% THD+N throughout voice band frequencies. Although this device is characterized out to 20 kHz, its operation was optimized for narrower band applications such as wireless communications. The BTL configuration eliminates the need for external coupling capacitors on the output in most applications, which is particularly important for small battery-powered equipment. A unique feature of the TPA711 is that it allows the amplifier to switch from BTL to SE on the fly when an earphone drive is required. This eliminates complicated mechanical switching or auxiliary devices just to drive the external load. This device features a shutdown mode for power-sensitive applications with special depop circuitry to eliminate speaker noise when exiting shutdown mode. The TPA711 is available in an 8-pin SOIC and the surface-mount PowerPAD MSOP package, which reduces board space by 50% and height by 40%.

RF				VDD	6	VDD
Audio			VDD/2			CS
Input
RI	4	IN	±	VO+	5
CI	2	BYPASS	+
CB
			±	VO±	8	700 mW
			+		7
From System Control	1	SHUTDOWN	Bias	GND
	3	SE/BTL
From HP Jack			Control

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PowerPAD is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 2000, Texas Instruments Incorporated

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1

TPA711

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER

SLOS230B ± NOVEMBER 1998 ± REVISED MARCH 2000

AVAILABLE OPTIONS

		PACKAGED DEVICES		MSOP
	TA	SMALL OUTLINE²	MSOP³
				SYMBOLIZATION
		(D)	(DGN)
	± 40°C to 85°C	TPA711D	TPA711DGN	ABB

² In the SOIC package, the maximum RMS output power is thermally limited to 350 mW; 700 mW peaks can be driven, as long as the RMS value is less than 350 mW.

³The D and DGN packages are available taped and reeled. To order a taped and reeled part, add the suffix R to the part number (e.g., TPA311DR).

								Terminal Functions
		TERMINAL			I/O			DESCRIPTION
		NAME		NO.
	BYPASS			2	I	BYPASS is the tap to the voltage divider for internal mid-supply bias. This terminal should be connected to
						a 0.1- F to 2.2- F capacitor when used as an audio amplifier.
	GND			7		GND is the ground connection.
	IN			4	I	IN is the audio input terminal.
				3	I
	SE/BTL					When SE/BTL is held low, the TPA711 is in BTL mode. When SE/BTL is held high, the TPA711 is in SE mode.
	SHUTDOWN			1	I	SHUTDOWN places the entire device in shutdown mode when held high (IDD = 7 A).
	VDD			6		VDD is the supply voltage terminal.
	VO+			5	O	VO+ is the positive output for BTL and SE modes.
	VO±			8	O	VO± is the negative output in BTL mode and a high-impedance output in SE mode.

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)§

Supply voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . 6	V
Input voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . .	±0.3 V to VDD +0.3	V
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . .	internally limited (see Dissipation Rating Table)
Operating free-air temperature range, TA (see Table 3) . . . .	. . . . . . . . . . . . . . . . . . . . . . .	. . . . . ±40°C to 85°C
Operating junction temperature range, TJ . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . . .	. . . . ±40°C to 150°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . . .	. . . . ±65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . .		. . . . . . . . . . . . 260°C

§Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

DISSIPATION RATING TABLE

PACKAGE	TA ≤ 25°C	DERATING FACTOR	TA = 70°C	TA = 85°C
D	725 mW	5.8 mW/°C	464 mW	377 mW
DGN	2.14 W¶	17.1 mW/°C	1.37 W	1.11 W

¶Please see the Texas Instruments document, PowerPAD Thermally Enhanced Package Application Report

(literature number SLMA002), for more information on the PowerPAD package. The thermal data was measured on a PCB layout based on the information in the section entitled Texas Instruments Recommended Board for PowerPAD on page 33 of the before mentioned document.

recommended operating conditions

	MIN		MAX	UNIT
Supply voltage, VDD	2.5		5.5	V
Operating free-air temperature, TA (see Table 3)	± 40		85	°C

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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER

SLOS230B ± NOVEMBER 1998 ± REVISED MARCH 2000

electrical characteristics at specified free-air temperature, VDD = 3.3 V, TA = 25°C (unless otherwise noted)

	PARAMETER	TEST CONDITIONS		MIN TYP			MAX		UNIT
VOO	Output offset voltage (measured differentially)	See Note 1					20		mV
PSRR	Power supply rejection ratio	VDD = 3.2 V to 3.4 V	BTL mode			85			dB
			SE mode			83
IDD	Supply current (see Figure 6)	BTL mode				1.25	2.5		mA
		SE mode				0.65	1.25
IDD(SD)	Supply current, shutdown mode (see Figure 7)					7	50		µA

NOTE 1: At 3 V < VDD < 5 V the dc output voltage is approximately VDD/2.

operating characteristics, VDD = 3.3 V, TA = 25°C, RL = 8 Ω

	PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
		THD = 0.2%,	BTL mode,	See Figure 14		250
PO	Output power, see Note 2							mW
		THD = 0.1%,	SE mode,	RL = 32 Ω,		37
		See Figure 22
THD + N	Total harmonic distortion plus noise	PO = 250 mW,	f = 200 Hz to 4 kHz,	See Figure 12		0.55%
BOM	Maximum output power bandwidth	Gain = 2,	THD = 2%,	See Figure 12		20		kHz
B1	Unity-gain bandwidth	Open Loop,	See Figure 36			1.4		MHz
		f = 1 kHz,	CB = 1 µF,	BTL mode,		79
		See Figure 5
	Supply ripple rejection ratio							dB
		f = 1 kHz,	CB = 1 µF,	SE mode,		70
		See Figure 3
Vn	Noise output voltage	Gain = 1,	CB = 0.1 µF,	See Figure 42		17		µV(rms)
NOTE 2: Output power is measured at the output terminals of the device at f = 1 kHz.

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3

TPA711

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER

SLOS230B ± NOVEMBER 1998 ± REVISED MARCH 2000

electrical characteristics at specified free-air temperature, VDD = 5 V, TA = 25°C (unless otherwise noted)

	PARAMETER	TEST CONDITIONS		MIN TYP			MAX		UNIT
VOO	Output offset voltage (measured differentially)						20		mV
PSRR	Power supply rejection ratio	VDD = 4.9 V to 5.1 V	BTL mode			78			dB
			SE mode			76
IDD	Supply current (see Figure 6)	BTL mode				1.25	2.5		mA
		SE mode				0.65	1.25
IDD(SD)	Supply current, shutdown mode (see Figure 7)					50	100		µA

operating characteristics, VDD = 5 V, TA = 25°C, RL = 8 Ω

	PARAMETER			TEST CONDITIONS		MIN	TYP	MAX	UNIT
			THD = 0.3%,	BTL mode,	See Figure 18		700²
PO	Output power, see Note 2		THD = 0.1%,	SE mode,	RL = 32 Ω,		85		mW
			See Figure 26
THD + N	Total harmonic distortion plus		PO = 700 mW,	f = 200 Hz to 4 kHz,	See Figure 16		0.5%
	noise
BOM	Maximum output power bandwidth		Gain = 2,	THD = 2%,	See Figure 16		20		kHz
B1	Unity-gain bandwidth		Open Loop,	See Figure 37			1.4		MHz
			f = 1 kHz,	CB = 1 µF,	BTL mode,		80
			See Figure 5
	Supply ripple rejection ratio								dB
			f = 1 kHz,	CB = 1 µF,	SE mode,		73
			See Figure 4
Vn	Noise output voltage		Gain = 1,	CB = 0.1 µF,	See Figure 43		17		µV(rms)

²The DGN package, properly mounted, can conduct 700 mW RMS power continuously. The D package, can only conduct 350 mW RMS power continuously, with peaks to 700 mW.

NOTE 2: Output power is measured at the output terminals of the device at f = 1 kHz.

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						TPA711
			700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
					SLOS230B ± NOVEMBER 1998 ± REVISED MARCH 2000
	PARAMETER MEASUREMENT INFORMATION
					VDD	6
	RF					VDD
Audio			V	/2		CS
			DD
Input
RI	4	IN		±	VO+	5
CI	2	BYPASS		+
CB
						RL = 8 Ω
				±	VO±	8
				+		7
	1	SHUTDOWN			GND
	3	SE/BTL	Bias
			Control
			Figure 1. BTL Mode Test Circuit
					VDD	6
	RF					VDD
Audio			V	/2		CS
			DD
Input
RI	4	IN		±	VO+	5
CI	2	BYPASS		+
						CO
CB
						RL = 32 Ω
				±	VO±	8
				+		7
	1	SHUTDOWN			GND
	3	SE/BTL	Bias
VDD			Control

Figure 2. SE Mode Test Circuit

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5

TPA711

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER

SLOS230B ± NOVEMBER 1998 ± REVISED MARCH 2000

TYPICAL CHARACTERISTICS

Table of Graphs

				FIGURE
		Supply ripple rejection ratio	vs Frequency	3, 4, 5
	IDD	Supply current	vs Supply voltage	6,	7
	PO	Output power	vs Supply voltage	8,	9
			vs Load resistance	10, 11
			vs Frequency	12, 13, 16, 17, 20, 21,
				24, 25, 28, 29, 32, 33
	THD + N	Total harmonic distortion plus noise
			vs Output power	14, 15, 18, 19, 22, 23,
				26, 27, 30, 31, 34, 35
		Open loop gain and phase	vs Frequency	36,	37
		Closed loop gain and phase	vs Frequency	38, 39,	40, 41
	Vn	Output noise voltage	vs Frequency	42,	43
	PD	Power dissipation	vs Output power	44, 45,	46, 47

SUPPLY RIPPLE REJECTION RATIO SUPPLY RIPPLE REJECTION RATIO

			vs
			FREQUENCY
	0			VDD = 3.3 V		0
± dB	±10			RL = 8 Ω	± dB	±10
	±20			SE
						±20
Ratio	±30		CB = 0.1 µF		Ratio	±30
Rejection	±40				Rejection	±40
	±50	CB = 1 µF				±50
Ripple	±60				Ripple	±60
Supply	±70				Supply	±70
	±80	BYPASS = 1/2 VDD				±80
	±90					±90
	±100	100	1k	10k	20k	±100
	20
			f ± Frequency ± Hz

		vs
		FREQUENCY
			VDD = 5 V
			RL = 8 Ω
			SE
		CB = 0.1 µF
	CB = 1 µF
	BYPASS = 1/2 VDD
20	100	1k	10k	20k
		f ± Frequency ± Hz

Figure 3

Figure 4

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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER

SLOS230B ± NOVEMBER 1998 ± REVISED MARCH 2000

TYPICAL CHARACTERISTICS

SUPPLY RIPPLE REJECTION RATIO

SUPPLY CURRENT

vs

vs

FREQUENCY

SUPPLY VOLTAGE

0

1.8

±10

RL = 8 Ω

dB

CB = 1 µF

1.6

BTL

BTL

±

±20

1.4

Ratio

±30

mA

1.2

Rejection

Current±

±50

±40

1

Ripple

Supply

±60

0.8

SE

Supply

±70

I

0.6

±

±80

VDD = 3.3 V

DD

0.4

±90

VDD = 5 V

0.2

±100

0

3

3.5

5.5

20

100

1k

10k

20k

2.5

4

4.5

5

f ± Frequency ± Hz

VDD ± Supply Voltage ± V

Figure 5

Figure 6

SUPPLY CURRENT vs

SUPPLY VOLTAGE

90 SHUTDOWN = High

	80
± A	70
	60
Current
	50
± Supply	40
	30
DD
I	20
	10
	0
	2.5	3	3.5	4	4.5	5	5.5
			VDD ± Supply Voltage ± V

Figure 7

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7

TPA711

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER

SLOS230B ± NOVEMBER 1998 ± REVISED MARCH 2000

TYPICAL CHARACTERISTICS

OUTPUT POWER	OUTPUT POWER
vs	vs
SUPPLY VOLTAGE	SUPPLY VOLTAGE

	1000	THD+N 1%						350
									THD+N = 1%
		f = 1 kHz
									f = 1 kHz
		BTL						300
	800								SE
mW							mW	250
±			RL = 8 Ω				±
Power	600						Power	200
Output±							Output±
										RL = 8 Ω
	400							150
O				RL = 32 Ω			O	100
P							P				RL = 32 Ω
	200
								50
	0							0
	2.5	3	3.5	4	4.5	5	5.5	2.5	3	3.5	4	4.5	5	5.5
			VDD ± Supply Voltage ± V							V ± Supply Voltage ± V
										DD

Figure 8	Figure 9
OUTPUT POWER	OUTPUT POWER
vs	vs
LOAD RESISTANCE	LOAD RESISTANCE

	800					THD+N = 1%			350
	700					f = 1 kHz
						BTL			300
mW	600							mW	250
			VDD = 5 V
±	500							±
Power								Power
									200
	400
Output								Output
									150
	300	VDD = 3.3 V
±								±
O								O	100
P	200							P
	100								50
	0	16	24	32	40	48	56	64	0
	8
			RL ± Load Resistance ± Ω

						THD+N = 1%
						f = 1 kHz
						SE
		VDD = 5 V
	VDD = 3.3 V
8	14	20	26	32	38	44	50	56	62
			RL ± Load Resistance ± Ω

Figure 10

Figure 11

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TPA711 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER

SLOS230B ± NOVEMBER 1998 ± REVISED MARCH 2000

TYPICAL CHARACTERISTICS

TOTAL HARMONIC DISTORTION PLUS NOISE

TOTAL HARMONIC DISTORTION PLUS NOISE

		vs						vs
10		FREQUENCY						FREQUENCY
						10
Noise+DistortionHarmonic±TotalTHD+N± %	VDD = 3.3 V				Noise+DistortionHarmonic±TotalTHD+N± %	VDD = 3.3 V
	PO = 250 mW					RL = 8 Ω		PO = 250 mW
	RL = 8 Ω					A	= ±2 V/V
	BTL					V
		AV =± 20 V/V				BTL
1						1		PO = 50 mW
	AV = ±10 V/V
0.1			AV = ±2 V/V			0.1
								PO = 125 mW
0.01						0.01
20	100	1k	10k	20k
						20	100	1k	10k	20k
		f ± Frequency ± Hz						f ± Frequency ± Hz

Figure 12	Figure 13
TOTAL HARMONIC DISTORTION PLUS NOISE	TOTAL HARMONIC DISTORTION PLUS NOISE

				vs						vs
			OUTPUT POWER							OUTPUT POWER
10	VDD = 3.3 V								10
DistortionHarmonic±TotalTHD+N+ Noise ± %									DistortionHarmonic±TotalTHD+N+ Noise ± %
	f = 1 kHz
	AV = ±2 V/V
	BTL									f = 20 kHz
										f = 10 kHz
1									1
			RL = 8 Ω							f = 1 kHz
0.1									0.1	f = 20 Hz
											VDD = 3.3 V
											RL = 8 Ω
											CB = 1 µF
											AV = ±2 V/V
											BTL
0.01									0.01
0	0.05	0.1	0.15	0.2	0.25	0.3	0.35	0.4	0.01	0.1	1
		PO ± Output Power ± W								P ± Output Power ± W
										O
			Figure 14							Figure 15

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9

TPA711

700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER

SLOS230B ± NOVEMBER 1998 ± REVISED MARCH 2000

TYPICAL CHARACTERISTICS

TOTAL HARMONIC DISTORTION PLUS NOISE

TOTAL HARMONIC DISTORTION PLUS NOISE

			vs						vs
			FREQUENCY						FREQUENCY
%	10	VDD = 5 V				%	10
								VDD = 5 V
±		PO = 700 mW				±		RL = 8 Ω
Noise						Noise
		RL = 8 Ω	AV = ±20 V/V					BTL
		BTL						AV = ±2 V/V		PO = 50 mW
+						+
Distortion	1					Distortion	1
Harmonic	0.1		AV = ±2 V/V			Harmonic	0.1	PO = 700 mW
±TotalTHD+N		AV = ±10 V/V				±TotalTHD+N
									PO = 350 mW
	0.01						0.01
	20	100	1k	10k	20k		20	100	1k	10k	20k
			f ± Frequency ± Hz						f ± Frequency ± Hz

Figure 16	Figure 17
TOTAL HARMONIC DISTORTION PLUS NOISE	TOTAL HARMONIC DISTORTION PLUS NOISE
vs	vs
OUTPUT POWER	OUTPUT POWER

%	10										%	10
		VDD = 5 V
±											±
		f = 1 kHz
Noise											Noise
		AV	= ±2 V/V
+		BTL									+
Distortion	1										Distortion	1	f = 20 kHz
													f = 10 kHz
Harmonic											Harmonic
	0.1				RL = 8 Ω							0.1	f = 1 kHz
													f = 20 Hz
±Total											±Total
												VDD = 5 V
THD+N											THD+N	RL = 8 Ω
												CB = 1	µF
												AV = ±2 V/V
	0.01											BTL
												0.01
	0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	1		0.01	0.1	1
			PO ± Output Power ± W										PO ± Output Power ± W

Figure 18

Figure 19

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