Texas Instruments TLV2344IPWR, TLV2344IPWLE, TLV2344IPW, TLV2344IN, TLV2344IDR Datasheet

TLV2342, TLV2342Y, TLV2344, TLV2344Y LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 ± FEBRUARY 1997

DWide Range of Supply Voltages Over

Specified Temperature Range: ±40°C to 85°C . . . 2 V to 8 V

DFully Characterized at 3 V and 5 V

DSingle-Supply Operation

DCommon-Mode Input-Voltage Range

Extends Below the Negative Rail and Up to VDD ±1 V at 25°C

TLV2342

D OR P PACKAGE

(TOP VIEW)

1OUT		1	8		VDD
1IN ±
		2	7		2OUT
1IN +		3	6		2IN ±
VDD±/ GND		4	5		2IN +

DOutput Voltage Range Includes Negative Rail

DHigh Input Impedance . . . 1012 Ω Typical

DESD-Protection Circuitry

DDesigned-In Latch-Up Immunity

description

The TLV234x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike other products in this family designed primarily to meet aggressive power consumption specifications, the TLV234x was developed to offer ac performance approaching that of a BiFET operational amplifier while operating from a single-supply rail. At 3 V, the TLV234x has a typical slew rate of 2.1 V/μs and 790-kHz unity-gain bandwidth.

Each amplifier is fully functional down to a minimum supply voltage of 2 V and is fully characterized, tested, and specified at both 3-V and 5-V power supplies over a temperature range of ±40°C to 85°C. The common-mode input voltage range includes the negative rail and extends to within 1 V of the positive rail.

TLV2342

PW PACKAGE (TOP VIEW)

1OUT		1		8					VDD +
1IN±		2		7					2OUT
1IN +		3		6					2IN ±
VDD ±/ GND		4		5					2IN +
			TLV2344
D OR N PACKAGE
			(TOP VIEW)
1OUT						4OUT
			1	14
1IN ±			2	13		4IN ±
1IN +			3	12		4IN +
VDD +			4	11		VDD ± / GND
2IN +			5	10		3IN +
2N ±			6	9		3IN ±
2OUT			7	8		3OUT
			TLV2344
PW PACKAGE
			(TOP VIEW)
1OUT		1		14					4OUT
1IN ±									4IN ±
1IN +									4IN +
VDD+									VDD ±/ GND
2IN +									3IN +
2IN ±									3IN ±
2OUT		7		8					3OUT

AVAILABLE OPTIONS

		V max		PACKAGED DEVICES			CHIP FORM§
	TA	IO	SMALL OUTLINE²	PLASTIC DIP	PLASTIC DIP	TSSOP³
		AT 25°C					(Y)
			(D)	(N)	(P)	(PW)
	±40°C to 85°C	9 mV	TLV2342ID	Ð	TLV2342IP	TLV2342IPWLE	TLV2342Y
		10 mV	TLV2344ID	TLV2344IN	Ð	TLV2344IPWLE	TLV2344Y

² The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2342IDR). ³ The PW package is only available left-end taped and reeled (e.g., TLV2342IPWLE).

§ Chip forms are tested at 25°C only.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinCMOS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1997, Texas Instruments Incorporated

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

1

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 ± FEBRUARY 1997

description (continued)

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low input bias currents. These parameters combined with good ac performance make the TLV234x effectual in applications such as high-frequency filters and wide-bandwidth sensors.

To facilitate the design of small portable equipment, the TLV234x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.

The device inputs and outputs are designed to withstand ±100-mA currents without sustaining latch-up. The TLV234x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

TLV2342Y chip information

This chip, when properly assembled, displays characteristics similar to the TLV2342. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

					(5)	(4)		(3)
					(6)			(2)
			59		(7)	(8)		(1)
						72

			VDD
	(3)			(8)
1IN +			+			(1)
1IN ±	(2)		±				1OUT
	(5)
2IN +			+			(7)
							2OUT
	(6)
2IN ±			±
				(4)
		VDD		± /GND

CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C

TOLERANCES ARE ± 10%.

ALL DIMENSIONS ARE IN MILS.

2	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 ± FEBRUARY 1997

TLV2344Y chip information

This chip, when properly assembled, displays characteristics similar to the TLV2344. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

								(14)	(13)	(12)	(11)		(10)	(9)	(8)
				68				(1)	(2)	(3)	(4)		(5)	(6)	(7)
											108

			VDD
					(4)
	1IN +	(3)	+
							(1)		1OUT
		(2)
	1IN ±		±
		(3)
	2IN +	(5)	+
							(7)		2OUT
		(6)
	2IN ±		±
		(10)
	3IN +		+
							(8)		3OUT
		(9)
	3IN ±		±
		(12)
	4IN +		+
							(14)
	4IN ±	(13)	±						4OUT
					(11)
		VDD ± /GND

CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C

TOLERANCES ARE ± 10%.

ALL DIMENSIONS ARE IN MILS.

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

3

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 ± FEBRUARY 1997

equivalent schematic (each amplifier)

			VDD
		P3	P4
					R6
P1		P2		N5
IN ±
R1			R2
IN +				C1	P5	P6
			R5
			N3			OUT
				N4
	N1	N2			N6
R3	D1	R4	D2			N7
					R7
			GND

ACTUAL DEVICE COMPONENT COUNT²

COMPONENT	TLV2342	TLV2344
Transistors	54	108
Resistors	14	28
Diodes	4	8
Capacitors	2	4

²Includes both amplifiers and all ESD, bias, and trim circuitry.

4	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 ± FEBRUARY 1997

absolute maximum ratings over operating free-air temperature (unless otherwise noted)²

Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . . 8 V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . VDD ±
Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . ±0.3 V to VDD
Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . ± 5 mA
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . ± 30 mA
Duration of short-circuit current at (or below) TA = 25°C (see Note 3) . . . . . . . .	. . . . . . . . . . . . . . . . . unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	See Dissipation Rating Table
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . ±40°C to 85°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . ±65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . 260°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.

2.Differential voltages are at the noninverting input with respect to the inverting input.

3.The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded (see application selection).

DISSIPATION RATING TABLE

	PACKAGE	TA ≤ 25°C	DERATING FACTOR	TA = 85°C
		POWER RATING	ABOVE TA = 25°C	POWER RATING
	D±8	725 mW	5.8 mW/°C	377 mW
	D±14	950 mW	7.6 mW/°C	494 mW
	N	1575 mW	5.6 mW/°C	364 mW
	P	1000 mW	8.0 mW/°C	520 mW
	PW±8	525 mW	4.2 mW/°C	273 mW
	PW±14	700 mW	6.0 mW/°C	340 mW

recommended operating conditions

			MIN	MAX	UNIT
	Supply voltage, VDD		2	8	V
	Common-mode input voltage, VIC	VDD = 3 V	± 0.2	1.8	V
		VDD = 5 V	± 0.2	3.8
	Operating free-air temperature, TA		± 40	85	°C

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

5

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 ± FEBRUARY 1997

TLV2342I electrical characteristics at specified free-air temperature

TLV2342I

PARAMETER

TEST CONDITIONS

T ²

UNIT

V

DD

= 3 V

V

DD

= 5 V

A

MIN

TYP

MAX

MIN

TYP

MAX

VO = 1 V,

VIC = 1 V,

25°C

0.6

9

1.1

9

VIO

Input offset voltage

RS = 50 Ω,

mV

Full range

11

11

RL = 10 kΩ

Average temperature

25°C to

αVIO

coefficient of input offset

2.7

2.7

μV/°C

85°C

voltage

IIO

Input offset current

VO = 1 V,

VIC = 1 V

25°C

0.1

0.1

pA

(see Note 4)

°

22

1000

24

1000

85 C

IIB

Input bias current (see Note 4)

VO = 1 V,

VIC = 1 V

25°C

0.6

0.6

pA

85°C

175

2000

200

2000

± 0.2

± 0.3

± 0.2

± 0.3

25°C

to

to

to

to

V

VICR

Common-mode input voltage

2

2.3

4

4.2

range (see Note 5)

± 0.2

± 0.2

Full range

to

to

V

1.8

3.8

V

IC

= 1 V,

°

1.75

1.9

3.2

3.7

25 C

VOH

High-level output voltage

VID = 100 mV,

V

Full range

1.7

3

IOH = ± 1 mA

V

IC

= 1 V,

°

120

150

90

150

25 C

VOL

Low-level output voltage

VID = ±100 mV,

mV

Full range

190

190

IOL = 1 mA

V

IC

= 1 V,

°

3

11

5

23

Large-signal differential

25 C

AVD

RL = 10 kΩ,

V/mV

voltage amplification

Full range

2

3.5

See Note 6

V

O

= 1 V,

°

65

78

65

80

25 C

CMRR

Common-mode rejection ratio

VIC = VICRmin,

dB

Full range

60

60

RS = 50 Ω

kSVR

Supply-voltage rejection ratio

VIC = 1 V,

VO = 1 V,

25°C

70

95

70

95

dB

( VDD / VIO)

RS = 50 Ω

Full range

65

65

IDD

Supply current

VO = 1 V,

VIC = 1 V,

25°C

0.65

3

1.4

3.2

mA

No load

Full range

4

4.4

² Full range is ± 40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5.This range also applies to each input individually.

6.At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

6	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS

LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 ± FEBRUARY 1997

TLV2342I operating characteristics at specified free-air temperature, VDD = 3 V

PARAMETER

TEST CONDITIONS

TA

TLV2342I

UNIT

MIN

TYP

MAX

V

= 1 V,

V

= 1 V,

°

2.1

IC

I(PP)

25 C

V/μs

SR

Slew rate at unity gain

RL = 10 kΩ,

CL = 20 pF,

85°C

1.7

See Figure 34

Vn

Equivalent input noise voltage

f = 1 kHz,

RS = 20 Ω,

25°C

25

nV/√ Hz

See Figure 35

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

25°C

170

kHz

R

L

= 10 kΩ,

See Figure 34

°

145

85 C

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

25°C

790

kHz

R

L

= 10 kΩ,

See Figure 36

°

690

85 C

VI = 10 mV,

f = B1,

± 40°C

53°

φm

Phase margin

CL = 20 pF,

RL = 10 kΩ,

25°C

49°

See Figure 36

85°C

47°

TLV2342I operating characteristics at specified free-air temperature, VDD = 5 V

PARAMETER

TEST CONDITIONS

TA

TLV2342I

UNIT

MIN

TYP

MAX

VIC = 1 V,

VI(PP) = 1 V

25°C

3.6

85°C

2.8

SR

Slew rate at unity gain

RL = 10 kΩ,

V/μs

°

C

L

= 20 pF,

2.9

VI(PP) = 2.5 V

25 C

See Figure 34

85°C

2.3

Vn

Equivalent input noise voltage

f = 1 kHz,

RS = 20 Ω,

25°C

25

nV/√ Hz

See Figure 35

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

25°C

320

kHz

R

L

= 10 kΩ,

See Figure 34

°

250

85 C

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

25°C

1.7

kHz

R

L

= 10 kΩ,

See Figure 36

°

1.2

85 C

VI = 10 mV,

f = B1,

± 40°C

49°

φm

25°C

46°

Phase margin

CL = 20 pF,

RL = 10 kΩ,

See Figure 36

85°C

43°

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TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 ± FEBRUARY 1997

TLV2344I electrical characteristics at specified free-air temperature

TEST

TLV2344I

PARAMETER

T ²

UNIT

V

DD

= 3 V

V

DD

= 5 V

CONDITIONS

A

MIN

TYP

MAX

MIN

TYP

MAX

VO = 1 V,

25°C

1.1

10

1.1

10

VIO

Input offset voltage

VIC = 1 V,

mV

RS

= 50 Ω,

Full range

12

12

RL = 10 kΩ

αVIO

Average temperature coefficient of

25°C to

2.7

2.7

μV/°C

input offset voltage

85°C

IIO

Input offset current (see Note 4)

VO = 1 V,

25°C

0.1

0.1

pA

V

= 1 V

°

22

1000

24

1000

IC

85 C

IIB

Input bias current (see Note 4)

VO = 1 V,

25°C

0.6

0.6

pA

V

= 1 V

°

175

2000

200

2000

IC

85 C

± 0.2

± 0.3

± 0.2

± 0.3

25°C

to

to

to

to

V

VICR

Common-mode input voltage range

2

2.3

4

4.2

(see Note 5)

± 0.2

± 0.2

Full range

to

to

V

1.8

3.8

V

= 1 V,

°

1.75

1.9

3.2

3.7

IC

25 C

VOH

High-level output voltage

VID = 100 mV,

V

Full range

1.7

3

IOH = ± 1 mA

V

= 1 V,

°

120

150

90

150

IC

25 C

VOL

Low-level output voltage

VID = ±100 mV,

mV

Full range

190

190

IOL = 1 mA

V

= 1 V,

°

3

11

5

23

Large-signal differential

IC

25 C

AVD

RL

= 10 kΩ,

V/mV

voltage amplification

Full range

2

3.5

See Note 6

V

= 1 V,

°

65

78

65

80

O

25 C

CMRR

Common-mode rejection ratio

VIC = VICRmin,

dB

Full range

60

60

RS = 50 Ω

V

= 1 V,

°

70

95

70

95

Supply-voltage rejection ratio

IC

25 C

kSVR

VO

= 1 V,

dB

( VDD / VIO)

Full range

65

65

RS

= 50 Ω

V

= 1 V,

°

1.3

6

2.7

6.4

O

25 C

IDD

Supply current

VIC = 1 V,

mA

Full range

8

8.8

No load

² Full range is ± 40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5.This range also applies to each input individually.

6.At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

8	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS

LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 ± FEBRUARY 1997

TLV2344I operating characteristics at specified free-air temperature, VDD = 3 V

PARAMETER

TEST CONDITIONS

TA

TLV2344I

UNIT

MIN

TYP

MAX

VIC = 1 V,

VI(PP) = 1 V,

25°C

2.1

SR

Slew rate at unity gain

RL = 10 kΩ,

CL = 20 pF,

V/μs

85°C

1.7

See Figure 34

Vn

Equivalent input noise voltage

f = 1 kHz,

RS = 20 Ω,

25°C

25

nV/√ Hz

See Figure 35

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

25°C

170

kHz

R

L

= 10 kΩ,

See Figure 34

°

145

85 C

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

25°C

790

kHz

R

L

= 10 kΩ,

See Figure 36

°

690

85 C

VI = 10 mV,

f = B1,

± 40°C

53°

φm

Phase margin

CL = 20 pF,

RL = 10 kΩ,

25°C

49°

See Figure 36

85°C

47°

TLV2344I operating characteristics at specified free-air temperature, VDD = 5 V

PARAMETER

TEST CONDITIONS

TA

TLV2344I

UNIT

MIN

TYP

MAX

VIC = 1 V,

V

= 1 V

25°C

3.6

85°C

2.8

Ω

I(PP)

SR

Slew rate at unity gain

RL = 10 k ,

V/μs

C

L

= 20 pF,

°

2.9

VI(PP) = 2.5 V

25 C

See Figure 34

85°C

2.3

Vn

Equivalent input noise voltage

f = 1 kHz,

RS = 20 Ω,

25°C

25

nV/√ Hz

See Figure 35

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

25°C

320

kHz

R

L

= 10 kΩ,

See Figure 34

°

250

85 C

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

25°C

1.7

MHz

R

L

= 10 kΩ,

See Figure 36

°

1.2

85 C

VI = 10 mV,

f = B1,

± 40°C

49°

φm

Phase margin

CL = 20 pF,

RL = 10 kΩ,

25°C

46°

See Figure 36

85°C

43°

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

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TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 ± FEBRUARY 1997

TLV2342Y electrical characteristics, TA = 25°C

					TLV2342Y
	PARAMETER	TEST CONDITIONS		VDD = 3 V		VDD = 5 V		UNIT
				MIN TYP	MAX	MIN TYP	MAX
VIO	Input offset voltage	VO = 1 V,	VIC = 1 V,	0.6		1.1		mV
		RS = 50 Ω,	RL = 10 kΩ
IIO	Input offset current (see Note 4)	VO = 1 V,	VIC = 1 V	0.1		0.1		pA
IIB	Input bias current (see Note 4)	VO = 1 V,	VIC = 1 V	0.6		0.6		pA
	Common-mode input voltage			± 0.3		± 0.3
VICR				to		to		V
	range (see Note 5)
				2.3		4.2
VOH	High-level output voltage	VIC = 1 V,	VID = 100 mV,	1.9		3.7		V
		IOH = ± 1 mA
VOL	Low-level output voltage	VIC = 1 V	VID = 100 mV,	120		90		mV
		IOL = 1 mA
AVD	Large-signal differential voltage	VIC = 1 V,	RL = 10 kΩ,	11		23		V/mV
	amplification	See Note 6
CMRR	Common-mode rejection ratio	VO = 1 V,	VIC = VICRmin,	78		80		dB
		RS = 50 Ω
kSVR	Supply-voltage rejection ratio	VO = 1 V	VIC = 1 V,	95		95		dB
	( VDD / VID)	RS = 50 Ω
IDD	Supply current	VO = 1 V,	VIC = 1 V,	0.65		1.4		mA
		No load
NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5.This range also applies to each input individually.

6.At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

10	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

				TLV2342, TLV2342Y, TLV2344, TLV2344Y
			LinCMOS			LOW-VOLTAGE HIGH-SPEED
						OPERATIONAL AMPLIFIERS
							SLOS194 ± FEBRUARY 1997
TLV2344Y electrical characteristics, TA = 25°C
						TLV2344Y
	PARAMETER	TEST CONDITIONS			VDD = 3 V		VDD = 5 V		UNIT
					MIN TYP	MAX	MIN TYP	MAX
VIO	Input offset voltage	VO = 1 V,	VIC = 1 V,		1.1		1.1		mV
		RL = 10 kΩ	RL = 10 kΩ
IIO	Input offset current (see Note 4)	VO = 1 V,	VIC = 1 V		0.1		0.1		pA
IIB	Input bias current (see Note 4)	VO = 1 V,	VIC = 1 V		0.6		0.6		pA
	Common-mode input voltage				± 0.3		± 0.3
VICR					to		to		V
	range (see Note 5)
					2.3		4.2
VOH	High-level output voltage	VIC = 1 V,	VID = 100 mV,		1.9		3.7		V
		IOH = ± 1 mA
VOL	Low-level output voltage	VIC = 1 V,	VID = ± 100 mV,		120		90		mV
		IOL = 1 mA
AVD	Large-signal differential voltage	VIC = 1 V,	RL = 10 kΩ,		11		23		V/mV
	amplification	See Note 6
CMRR	Common-mode rejection ratio	VO = 1 V,	VIC = VICRmin,		78		80		dB
		RS = 50 Ω
kSVR	Supply-voltage rejection ratio	VO = 1 V,	VIC = 1 V,		95		95		dB
	( VDD / VID)	RS = 50 Ω
IDD	Supply current	VO = 1 V,	VIC = 1 V,		1.3		2.7		μA
		No load
NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5.This range also applies to each input individually.

6.At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

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