Texas Instruments TLV2341IPWR, TLV2341IPWLE, TLV2341IP, TLV2341IDR, TLV2341ID Datasheet

TLV2341, TLV2341Y LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

DWide Range of Supply Voltages Over Specified Temperature Range:

TA = ±40°C to 85°C . . . 2 V to 8 V

DFully Characterized at 3 V and 5 V

DSingle-Supply Operation

DCommon-Mode Input-Voltage Range

Extends Below the Negative Rail and up to VDD ±1 V at 25°C

DHigh Input Impedance . . . 1012 Ω Typ

DLow Noise . . . 25 nV/√ Hz Typically at f = 1 kHz (High-Bias Mode)

DESD-Protection Circuitry

DDesigned-In Latch-Up Immunity

DBias-Select Feature Enables Maximum Supply Current Range From 17 μA to 1.5 mA at 25°C

DOutput Voltage Range Includes Negative Rail

D OR P PACKAGE	PW PACKAGE
(TOP VIEW)	(TOP VIEW)

OFFSET N1		1	8		BIAS SELECT	OFFSET N1			1	8			BIAS SELECT
IN±		2	7		VDD	IN±			2	7			VDD
									3	6
IN+		3	6		OUT	IN+							OUT
									4	5
GND		4	5		OFFSET N2	GND							OFFSET N2

description

The TLV2341 operational amplifier has been specifically developed for low-voltage, single-supply applications and is fully specified to operate over a voltage range of 2 V to 8 V. The device uses the Texas Instruments silicon-gate LinCMOS technology to facilitate low-power, low-voltage operation and excellent offset-voltage stability. LinCMOS technology also enables extremely high input impedance and low bias currents allowing direct interface to high-impedance sources.

The TLV2341 offers a bias-select feature, which allows the device to be programmed with a wide range of different supply currents and therefore different levels of ac performance. The supply current can be set at 17 μA, 250 μA, or 1.5 mA, which results in slew-rate specifications between 0.02 and 2.1 V/μs (at 3 V).

The TLV2341 operational amplifiers are especially well suited to single-supply applications and are fully specified and characterized at 3-V and 5-V power supplies. This low-voltage single-supply operation combined with low power consumption makes this device a good choice for remote, inaccessible, or portable battery-powered applications. The common-mode input range includes the negative rail.

The device inputs and outputs are designed to withstand ±100-mA currents without sustaining latch-up. The TLV2341 incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-STD 883 C, Methods 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

AVAILABLE OPTIONS

			PACKAGED DEVICES			CHIP
	VIOmax
		SMALL		PLASTIC
TA					TSSOP	FORM
	AT 25°C	OUTLINE		DIP
					(PW)	(Y)
		(D)		(P)
± 40°C to 85°C	8 mV	TLV2341ID		TLV2341IP	TLV2341IPWLE	TLV2341Y

The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2341IDR).

The PW package is only available left-end taped and reeled (e.g., TLV2341IPWLE).

LinCMOS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1994, Texas Instruments Incorporated

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1

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

bias-select feature

The TLV2342 offers a bias-select feature that allows the user to select any one of three bias levels, depending on the level of performance desired. The tradeoffs between bias levels involve ac performance and power dissipation (see Table 1).

Table 1. Effect of Bias Selection on Performance

	TYPICAL PARAMETER VALUES		MODE
					UNIT
		HIGH BIAS	MEDIUM BIAS	LOW BIAS
	TA = 25°C, VDD = 3 V
		RL = 10 kΩ	RL = 100 kΩ	RL = 1 MΩ
PD	Power dissipation	975	195	15	μW
SR	Slew rate	2.1	0.38	0.02	V/μs
Vn	Equivalent input noise voltage at f = 1 kHz	25	32	68	nV/√	Hz
B1	Unity-gain bandwidth	790	300	27	kHz
φm	Phase margin	46°	39°	34°
AVD	Large-signal differential voltage amplification	11	83	400	V/mV

bias selection

Bias selection is achieved by connecting BIAS SELECT to one of three voltage levels (see Figure 1). For medium-bias applications, it is recommended that the bias-select pin be connected to the midpoint between the supply rails. This procedure is simple in split-supply applications since this point is ground. In single-supply applications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use of large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However, large-value resistors used in conjunction with a large-value capacitor require significant time to charge up to the supply midpoint after the supply is switched on. A voltage other than the midpoint may be used if it is within the voltages specified in the following table.

		VDD
	Low	1 MΩ	BIAS MODE	BIAS-SELECT VOLTAGE
				(single supply)
	Medium
			Low	VDD
	To the Bias-Select Pin
			Medium	1 V to VDD ± 1 V
	High
		1 MΩ	High	GND
			0.01 μ F

Figure 1. Bias Selection for Single-Supply Applications

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TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

high-bias mode

In the high-bias mode, the TLV2341 series feature low offset voltage drift, high input impedance, and low noise. Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation.

medium-bias mode

The TLV2341 in the medium-bias mode features a low offset voltage drift, high input impedance, and low noise. Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of that consumed by bipolar devices.

low-bias mode

In the low-bias mode, the TLV2341 features low offset voltage drift, high input impedance, extremely low power consumption, and high differential voltage gain.

ORDER OF CONTENTS

	TOPIC	BIAS MODE
	Schematic	all
	Absolute maximum ratings	all
	Recommended operating conditions	all
	Electrical characteristics	high
	Operating characteristics
		(Figures 2 ± 31)
	Typical characteristics
	Electrical characteristics	medium
	Operating characteristics
		(Figures 32 ± 61)
	Typical characteristics
	Electrical characteristics	low
	Operating characteristics
		(Figures 62 ± 91)
	Typical characteristics
	Parameter measurement information	all
	Application information	all

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3

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

TLV2341Y chip information

This chip, when properly assembled, displays characteristics similar to the TLV2341. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

				(2)	(1)			(8)		(7)
48
				(3)	(4)	(5)				(6)
								55

OFFSET N1		(1)			VDD
		(3)					(7)
IN +			+				(6)
IN ±	(2)		±						OUT
							(4)
		(5)
OFFSET N2
	(8)				GND
BIAS SELECT

CHIP THICKNESS: 15 TYPICAL BONDING PADS: 4 × 4 MINIMUM TJmax = 150°C

TOLERANCES ARE ± 10%.

ALL DIMENSIONS ARE IN MILS.

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75265 TEXAS DALLAS, •655303 BOX OFFICE POST

5

equivalent schematic

VDD

P3

P12

P9A

P4

R6

P5

P9B

P11

P1

P2

R2

IN ±

R1

N5

P10

N11

IN +

C1

P6A

P6B

P7B

P7A

P8

R5

N3

N12

LinCMOS

N6

N9

N7

N1

N2

N4

1994AUGUSTREVISED±1992MAY±SLOS110A

AMPLIFIERSOPERATIONAL

VOLTAGE-LOWPROGRAMMABLE

TLV2341YTLV2341,

N13

R3

D1

R4

D2

R7

N10

OFFSET

OFFSET

OUT

GND

BIAS

N1

N2

COMPONENT COUNT²

SELECT

Transistors

27

Diodes

2

Resistors

7

Capacitors

1

² Includes the amplifier and all

ESD, bias, and trim circuitry

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)²

Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . . 8 V
Differential input voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . VDD ±
Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . ±0.3 V to VDD
Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . ± 5 mA
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . ± 30 mA
Duration of short-circuit current at (or below) TA = 25°C (see Note 3) . . . . . . . .	. . . . . . . . . . . . . . . . . unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	See Dissipation Rating Table
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . ±40°C to 85°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . ±65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . 260°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any conditions beyond those indicated under ªrecommended operating conditionsºsi not implied. Exposure to absolute-maximum-rated conditions for extended periods may effect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.

2.Differential voltages are at the noninverting input with respect to the inverting input.

3.The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded (see application section).

DISSIPATION RATING TABLE

	PACKAGE	TA ≤ 25°C	DERATING FACTOR	TA = 85°C
		POWER RATING	ABOVE TA = 25°C	POWER RATING
	D	725 mW	5.8 mW/°C	377 mW
	P	1000 mW	8.0 mW/°C	520 mW
	PW	525 mW	4.2 mW/°C	273 mW

recommended operating conditions

			MIN	MAX	UNIT
	Supply voltage, VDD		2	8	V
	Common-mode input voltage, VIC	VDD = 3 V	± 0.2	1.8	V
		VDD = 5 V	± 0.2	3.8
	Operating free-air temperature, TA		± 40	85	°C

6	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

LinCMOS

TLV2341, TLV2341Y

PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

HIGH-BIAS MODE

electrical characteristics at specified free-air temperature

TEST

TLV2341I

PARAMETER

T ²

UNIT

V = 3 V

V

DD

= 5 V

CONDITIONS

A

DD

MIN

TYP

MAX

MIN

TYP

MAX

VO = 1 V,

°

0.6

8

1.1

8

VIC = 1 V,

25 C

VIO

Input offset voltage

mV

RS

= 50 Ω,

Full range

10

10

RL = 10 kΩ

αVIO

Average temperature of input

25°C to

2.7

2.7

μV/°C

offset voltage

85°C

IIO

Input offset current (see Note 4)

VO = 1 V,

25°C

0.1

0.1

pA

V

= 1 V

°

22

1000

24

1000

IC

85 C

IIB

Input bias current (see Note 4)

VO = 1 V,

25°C

0.6

0.6

pA

V

= 1 V

°

175

2000

200

2000

IC

85 C

25°C

± 0.2

± 0.3

± 0.2

± 0.3

to

to

to

to

V

VICR

Common-mode input voltage range

2

2.3

4

4.2

(see Note 5)

± 0.2

± 0.2

Full range

to

to

V

1.8

3.8

V

= 1 V,

°

1.75

1.9

3.2

3.7

VOH

High-level output voltage

IC

25 C

V

VID = 100 mV,

Full range

1.7

3

IOH = ± 1 mA

V

= 1 V,

°

120

150

90

150

VOL

Low-level output voltage

IC

25 C

mV

VID = ±100 mV,

Full range

190

190

IOL = 1 mA

V

= 1 V,

°

3

11

5

23

Large-signal differential

IC

25 C

AVD

RL

= 10 kΩ,

V/mV

voltage amplification

Full range

2

3.5

See Note 6

V

= 1 V,

°

65

78

65

80

CMRR

Common-mode rejection ratio

O

25 C

dB

VIC = VICRmin,

Full range

60

60

RS = 50 Ω

V

= 1 V,

°

70

95

70

95

kSVR

Supply-voltage rejection ratio

IC

25 C

dB

VO

= 1 V,

( VDD / VIO)

Full range

65

65

RS

= 50 Ω

II(SEL)

Bias select current

VI(SEL) = 0

25°C

± 1.2

± 1.4

μA

VO = 1 V,

25°C

325

1500

675

1600

μA

IDD

Supply current

VIC = 1 V,

Full range

2000

2200

No load

² Full range is ± 40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5.This range also applies to each input individually.

6.At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

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7

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

HIGH-BIAS MODE

operating characteristics at specified free-air temperature, VDD = 3 V

PARAMETER

TEST CONDITIONS

TA

TLV2341I

UNIT

MIN

TYP

MAX

V

= 1 V,

V

= 1 V,

°

2.1

IC

I(PP)

25 C

SR

Slew rate at unity gain

RL = 10 kΩ,

CL = 20 pF,

V/μs

85°C

1.7

See Figure 92

Vn

Equivalent input noise voltage

f = kHz,

RS = 20 Ω,

25°C

25

nV/√ Hz

See Figure 93

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

25°C

170

kHz

R

L

= 10 kΩ,

See Figure 92

°

145

85 C

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

25°C

790

kHz

R

L

= 10 kΩ,

See Figure 94

°

690

85 C

VI = 10 mV,

f = B1,

± 40°C

53°

φm

Phase margin

CL = 20 pF,

RL = 1 MΩ,

25°C

49°

See Figure 94

85°C

47°

operating characteristics at specified free-air temperature, VDD = 5 V

PARAMETER

TEST CONDITIONS

TA

TLV2341I

UNIT

MIN

TYP

MAX

VIC = 1 V,

V

= 1 V

25°C

3.6

85°C

2.8

Ω

I(PP)

SR

Slew rate at unity gain

RL = 10 k ,

V/μs

C

L

= 20 pF,

°

2.9

VI(PP) = 2.5 V

25 C

See Figure 92

85°C

2.3

Vn

Equivalent input noise voltage

f = 1 kHz,

RS = 20 Ω,

25°C

25

nV/√ Hz

See Figure 93

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

25°C

320

kHz

R

L

= 10 kΩ,

See Figure 92

°

250

85 C

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

25°C

1.7

MHz

R

L

= 10 kΩ,

See Figure 94

°

1.2

85 C

VI = 10 mV,

f = B1,

± 40°C

49°

φm

Phase margin

CL = 20 pF,

RL = 10 kΩ,

25°C

46°

See Figure 94

85°C

43°

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TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

HIGH-BIAS MODE

electrical characteristics, TA = 25°C

						TLV2341I
	PARAMETER	TEST CONDITIONS		VDD = 3 V			VDD = 5 V			UNIT
				MIN	TYP	MAX	MIN	TYP	MAX
VIO	Input offset voltage	VO = 1 V,	VIC = 1 V,		0.6	8		1.1	8	mV
		RS = 50 Ω, RL = 10 k Ω
IIO	Input offset current (see Note 4)	VO = 1 V,	VIC = 1 V		0.1			0.1		pA
IIB	Input bias current (see Note 4)	VO = 1 V,	VIC = 1 V		0.6			0.6		pA
	Common-mode input voltage			± 0.2	± 0.3		± 0.2	± 0.3
VICR				to	to		to	to		V
	range (see Note 5)
				2	2.3		4	4.2
		VIC = 1 V,	VID = 100 mV,
VOH	High-level output voltage	IOH = ±1		1.75	1.9		3.2	3.7		V
		mA
VOL	Low-level output voltage	VIC = 1 V,	VID = ± 100 mV,		120	150		90	150	mV
		IOL = 1 mA
AVD	Large-signal differential voltage	VIC = 1 V,	RL = 10 kΩ,	3	11		50	23		V/mV
	amplification	See Note 6
CMRR	Common-mode rejection ratio	VO = 1 V,	VIC = VICRmin,	65	78		65	80		dB
		RS = 50 Ω
kSVR	Supply-voltage rejection ratio	VO = 1 V,	VIC = 1 V,	70	95		70	95		dB
	( VDD / VIO)	RS = 50 Ω
II(SEL)	Bias select current	VI(SEL) = 0			± 1.2			± 1.4		μA
IDD	Supply current	VO = 1 V,	VIC = 1 V,		325	1500		675	1600	μA
		No load

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5.This range also applies to each input individually.

6.At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

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9

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Table of Graphs

				FIGURE
	VIO	Input offset voltage	Distribution	2,3
	αVIO	Input offset voltage temperature coefficient	Distribution	4,5
			vs Output current	6
	VOH	High-level output voltage	vs Supply voltage	7
			vs Temperature	8
			vs Common-mode input voltage	9
	VOL	Low-level output voltage	vs Temperature	10, 12
			vs Differential input voltage	11
			vs Low-level output current	13
			vs Supply voltage	14
	AVD	Large-signal differential voltage amplification	vs Temperature	15
			vs Frequency	26, 27
	IIB	Input bias current	vs Temperature	16
	IIO	Input offset current	vs Temperature	16
	VIC	Common-mode input voltage	vs Supply voltage	17
	IDD	Supply current	vs Supply voltage	18
			vs Temperature	19
	SR	Slew rate	vs Supply voltage	20
			vs Temperature	21
		Bias select current	vs Supply voltage	22
	VO(PP)	Maximum peak-to-peak output voltage	vs Frequency	23
	B1	Unity-gain bandwidth	vs Temperature	24
			vs Supply voltage	25
			vs Supply voltage	28
	φm	Phase margin	vs Temperature	29
			vs Load capacitance	30
	Vn	Equivalent input noise voltage	vs Frequency	31
		Phase shift	vs Frequency	26, 27

10	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

Percentage of Units ± %

Percentage of Units ± %

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

				DISTRIBUTION OF TLV2341																										DISTRIBUTION OF TLV2341
					INPUT OFFSET VOLTAGE																										INPUT OFFSET VOLTAGE
50																							60
	V			= 3 V																							VDD = 5 V
	DD																										TA = 25°C
	T = 25°C
	A																										P Package
40	P Package																					± %	50
																							40
30																						Unitsof
																							30
																						Percentage
20
																							20
10
																							10
0																							0
± 5 ± 4 ± 3 ± 2 ±1 0												1		2		3		4		5			± 5 ± 4 ± 3 ± 2 ±1 0																1		2			3				4			5
					VIO ± Input Offset Voltage ± mV																										VIO ± Input Offset Voltage ± mV
							Figure 2																											Figure 3
				DISTRIBUTION OF TLV2341																										DISTRIBUTION OF TLV2341
					INPUT OFFSET VOLTAGE																										INPUT OFFSET VOLTAGE
				TEMPERATURE COEFFICIENT																										TEMPERATURE COEFFICIENT
50																							60
	VDD = 3 V																									VDD = 5 V
	TA = 25°C to 85°C																									TA = 25°C to 85°C
	P Package																						50			P Package
40																										Outliers:
																						± %				(1) 20.5 mV/°C
																							40
																						Unitsof
30																							30
20																						Percentage
																							20
10
																							10
0
																							0
±10 ± 8				± 6 ± 4 ± 2 0								2		4		6		8		10			±10 ± 8 ± 6 ± 4 ± 2 0																2		4			6				8			10
			αVIO ± Temperature Coefficient ± μV/°C																									αVIO ± Temperature Coefficient ± μV/°C
							Figure 4																											Figure 5

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11

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

OH

VV0H ± High-Level Output Voltage ± V

5

4

3

2

1

0

0

HIGH-LEVEL OUTPUT VOLTAGE vs

HIGH-LEVEL OUTPUT CURRENT

VIC = 1 V

VID = 100 mV

TA = 25°C

VDD = 5 V

VDD = 3 V

± 2 ± 4 ± 6 ± 8

IOH ± High-Level Output Current ± mA

OH

VV0H ± High-Level Output Voltage ± V

HIGH-LEVEL OUTPUT VOLTAGE vs

SUPPLY VOLTAGE

8

VIC = 1 V VID = 100 mV RL = 1 MΩ TA = 25°C

6

4

2

0

0

2

4

6

8

VDD ± Supply Voltage ± V

Figure 6

HIGH-LEVEL OUTPUT VOLTAGE vs

FREE-AIR TEMPERATURE

	3	VDD = 3 V
		VIC = 1 V
Level-High± Output Voltage ± V	2.4	VID = 100 mV						Level-Low± Output Voltage ± mV
	0.6	IOH = ± 2 mA
	1.8
	1.2
		IOH = ± 500 μA
VV0H		IOH = ± 1 mA						VOL
		IOH = ± 4 mA
OH		IOH = ± 3 mA						OL
	0
	± 75	± 50 ± 25	0	25	50	75	100	125
		TA ± Free-Air Temperature ± °C

Figure 7

LOW-LEVEL OUTPUT VOLTAGE vs

COMMON-MODE INPUT VOLTAGE

700

VDD = 5 V

650 IOL = 5 mA TA = 25°C

600

550

VID = ±100 mV

500

450

400

VID = ±1 V

350

300

0	1	2	3	4
	VIC ± Common-Mode Input Voltage ± V

Figure 8

Figure 9

12	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

		LOW-LEVEL OUTPUT VOLTAGE
				vs
		FREE-AIR TEMPERATURE
	200	VDD = 3 V
mV		VIC = 1 V
	185	VID = ± 100 mV
±		IOL = 1 mA
Voltage	150
OutputLevel-	125
± Low	100
VOL
OL	75
	50
	± 75	± 50 ± 25	0	25	50	75	100	125
		TA ± Free-Air Temperature ± °C

Figure 10

LOW-LEVEL OUTPUT VOLTAGE vs

FREE-AIR TEMPERATURE

	900
				VDD = 5 V
mV	800			VIC = 0.5 V
				VID = ± 1 V
±
	700			IOL = 5 mA
Voltage
	600
Output
	500
Level-
	400
Low±
	300
VOL	200
OL
	100
	0
	± 75			± 50 ± 25			0		25 50 75 100 125

TA ± Free-Air Temperature ± °C

Figure 12

		LOW-LEVEL OUTPUT VOLTAGE
				vs
		DIFFERENTIAL INPUT VOLTAGE
	800				VDD = 5 V
mV	700				VIC = |VID / 2|
					IOL = 5 mA
±					TA = 25°C
Voltage	600
Output	500
	400
Level	300
± Low-	200
VOL
OL	100
	0
	0	± 1	± 2 ± 3	± 4 ± 5	± 6	± 7 ± 8
			VID ± Differential Input Voltage ± V

Figure 11

					LOW-LEVEL OUTPUT VOLTAGE
										vs
					LOW-LEVEL OUTPUT CURRENT
	1
			VIC = 1 V
	0.9		VID = ± 100 mV
V			TA = 25°C
±	0.8
Voltage
	0.7													VDD = 5 V
Output
	0.5
Level	0.6
	0.4				VDD		= 3 V
-
± Low	0.3
VOL
OL	0.2
	0.1
	0
																7		8
	0		1		2			3		4		5		6

IOL ± Low-Level Output Current ± mA

Figure 13

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

13

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION vs

SUPPLY VOLTAGE

	60
			RL = 10 kΩ
Voltage	50
DifferentialSignal-Large V/mV±Amplification
	40				TA = ± 40°C
	30
	20
±									TA	= 25°C
VD	10
A							TA = 85°C
	0
			2	4			6				8
	0

VDD ± Supply Voltage ± V

Figure 14

INPUT BIAS CURRENT AND INPUT OFFSET

					CURRENT
						vs
	104		FREE-AIR TEMPERATURE
pA
		VDD = 3 V
±
		VIC	= 1 V
CurrentsOffset	102				IIB
		See Note A
	103
Bias and	101						IIO
± Input
IO	1
andIO
IB
IB	0.1
	25	35	45	55	65	75	85	95	105	115	125
			TA ± Free-Air Temperature ± °C

NOTE: The typical values of input bias current and input offset current below 5 pA were determined mathematically.

Figure 16

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION vs

FREE-AIR TEMPERATURE

	50
		RL = 10 kΩ
	45
Voltage
	40
DifferentialSignal-Large V/mV±Amplification
	35
	30			VDD = 5 V
	25
	20
	15		VDD = 3 V
±	10
VD
A	5
	0
	± 75 ± 50 ± 25		0	25 50 75 100 125

TA ± Free-Air Temperature ± °C

Figure 15

		COMMON-MODE INPUT VOLTAGE
			POSITIVE LIMIT
			vs
	8		SUPPLY VOLTAGE
± V		TA = 25°C
Input Voltage	6
Mode-Common	4
±	2
IC
VIC
	0
	0	2	4	6	8
		VDD ± Supply Voltage ± V

Figure 17

14	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

		SUPPLY CURRENT
		vs
		SUPPLY VOLTAGE
2	VIC = 1 V
	VO = 1 V
1.6	No Load
CurrentSupply± ± mA		TA = ± 40°C		CurrentSupply± ± mA
1.2
		TA = 25°C
0.8				IIDD
IIDD
DD			TA = 85°C	DD
0.4
0
0	2	4	6	8
	VDD ± Supply Voltage ± V

Figure 18

SUPPLY CURRENT vs

FREE-AIR TEMPERATURE

2

VIC = 1 V

1.75VO = 1 V No Load

1.5

1.25

1

VDD = 5 V

0.75

0.5		VDD = 3 V

0.25

0
±75 ± 50 ± 25	0	25	50	75 100 125

TA ± Free-Air Temperature ± °C

Figure 19

SR ± Slew Rate ± usV/μ

SLEW RATE vs

SUPPLY VOLTAGE

8 VI(PP) = 1 V AV = 1

7RL = 10 kΩ

CL = 20 pF

6 TA = 25°C

5

4

3

2

1

0

0

2

4

6

8

VDD ± Supply Voltage ± V

Figure 20

SR ± Slew Rate ± usV/μ

SLEW RATE vs

FREE-AIR TEMPERATURE

8 VI(PP) = 1 V AV = 1

7RL = 10 kΩ

CL = 20 pF

6

5

VDD = 5 V

4

3

2 VDD = 3 V

1

0

± 75 ± 50 ± 25 0 25 50 75 100 125 TA ± Free-Air Temperature ± °C

Figure 21

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

15

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A ± MAY 1992 ± REVISED AUGUST 1994

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Bias Select Current ± μnA

BIAS SELECT CURRENT

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE

		vs						vs
		SUPPLY VOLTAGE					FREQUENCY
± 3					V	5
	°				±			R	L	= 10 kΩ
	TA = 25 C				Voltage
	VI(SEL) = 0					VDD = 5 V
± 2.4
					Output	4
						VDD = 3 V
± 1.8					Peak-to-
						3
± 1.2					Peak	2			TA = ± 40°C
					Maximum±
						TA	= 85°C
						TA = 25°C
± 0.6						1
					O(PP)	0
0	2	4	6	8	V
						10	10 0	1000		10000
	VDD ± Supply Voltage ± V						f ± Frequency ± kHz

1 ± Unity-Gain Bandwidth ± MHz B1

Figure 22

Figure 23

		UNITY-GAIN BANDWIDTH									UNITY-GAIN BANDWIDTH
				vs									vs
		FREE-AIR TEMPERATURE										SUPPLY VOLTAGE
3.5									2.1
VI = 10 mV										VI = 10 mV
RL = 10 kΩ									1.9	RL = 10 kΩ
CL = 20 pF								MHz±	1.7	CL = 20 pF
2.9										TA = 25°C
								Bandwidth	1.5
2.3									1.1
									1.3
				VDD = 5 V				Gain
1.7									0.9
								-
								Unity±	0.7
1.1								1	0.5
				VDD = 3 V				1B
									0.3
0.5									0.1
± 75	± 50	± 25	0	25	50	75	100	125	0	1	2	3	4	5	6	7	8
		TA ± Free-Air Temperature ± °C									VDD ± Supply Voltage ± V

Figure 24

Figure 25

16	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265