Texas Instruments TLV2362IPWR, TLV2362IPWLE, TLV2362IPS, TLV2361CDBVR, TLV2361CDBV Datasheet

TLV2361, TLV2361Y, TLV2362, TLV2362Y

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

	SLOS195B ± FEBRUARY 1997 ± REVISED OCTOBER 1998
D Low Supply-Voltage	TLV2361 . . . DBV PACKAGE
Operation . . . VCC = ±1 V Min	(TOP VIEW)

DWide Bandwidth . . . 7 MHz Typ at VCC± = ±2.5 V

DHigh Slew Rate . . . 3 V/μs Typ at VCC± = ±2.5 V

DWide Output Voltage Swing . . . ±2.4 V Typ at VCC± = ±2.5 V, RL = 10 kΩ

DLow Noise . . . 8 nV/√ Hz Typ at f = 1 kHz

DPackage Options Include SOT-23 (DBV) Package for the TLV2361 and Plastic Small-Outline (D), Thin Shrink Small-Outline (PW), and Dual-In-Line (P) Packages for the TLV2362

description

IN+

1

5

VCC+

VCC± 2

IN± 3 4 OUT

TLV2362 . . . D, P, OR PW PACKAGE

		(TOP VIEW)
1OUT					VCC+
		1	8
1IN±		2	7		2OUT
1IN+		3	6		2IN±
VCC±		4	5		2IN+

The TLV236x devices are high-performance dual operational amplifiers built using an original Texas Instruments bipolar process. These devices can be operated at a very low supply voltage (±1 V), while maintaining a wide output swing. The TLV236x devices offer a dramatically improved dynamic range of signal conditioning in low-voltage systems. The TLV236x devices also provide higher performance than other general-purpose operational amplifiers by combining higher unity-gain bandwidth and faster slew rate. With their low distortion and low-noise performance, these devices are well suited for audio applications.

The C-suffix devices are characterized for operation from 0°C to 70°C and the I-suffix devices are characterized for operation from ±40°C to 85°C.

TLV2361 AVAILABLE OPTIONS

PACKAGED DEVICES

CHIP

TA

SOT-23

SYMBOL

FORM³

(DBV)²

(Y)

0°C to 70°C

TLV2361CDBV

VAAC

TLV2361Y

±40°C to 85°C

TLV2361IDBV

VAAI

² The DBV packages are only available taped and reeled.

³ Chip forms are specified for operation at 25°C only.

TLV2362 AVAILABLE OPTIONS

PACKAGED DEVICES

CHIP

TA

SMALL OUTLINE§

PLASTIC DIP

TSSOP¶

FORM³

(D)

(P)

(PW)

(Y)

±20°C to 85°C

TLV2362ID

TLV2362IP

TLV2362IPWR

TLV2362Y

³ Chip forms are specified for operation at 25°C only.

§ The D packages are available taped and reeled. Add an R to the package suffix (e.g., TLV2362IDR). ¶ The PW packages are available left-ended taped and reeled only, (e.g., TLV2362IPWR).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1998, Texas Instruments Incorporated

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

1

TLV2361, TLV2361Y, TLV2362, TLV2362Y

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

SLOS195B ± FEBRUARY 1997 ± REVISED OCTOBER 1998

equivalent schematic (each amplifier)

VCC+

IN+

IN±

OUT

									VCC±
ACTUAL DEVICE COMPONENT COUNT
COMPONENT									TLV2361		TLV2362
Transistors								30			46
Resistors								6			11
Diodes								1			1
Capacitors								2			4
JFET								1			1

2	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2361, TLV2361Y, TLV2362, TLV2362Y

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

SLOS195B ± FEBRUARY 1997 ± REVISED OCTOBER 1998

TLV2361Y chip information

This chip, when properly assembled, has characteristics similar to the TLV2361. Thermal compression or ultrasonic bonding can be used on the doped-aluminum bonding pads. This chip can be mounted with conductive epoxy or a gold-silicon preform.

	Bonding-Pad Assignments
(3)	(4)
			VCC+
			(5)
		(1)
		IN+	+	(4)
		(3)	±	OUT
39		IN±
(2)			(2)
			VCC±
		Chip Thickness: 15 Mils Typical
(1)		Bonding Pads: 4 × 4 Mils Minimum
	(5)	TJ(max) = 150°C
		Tolerances Are ±10%.
		All Dimensions Are in Mils.
		Pin (2) is Connected Internally to Backside of Chip.
	39

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

3

TLV2361, TLV2361Y, TLV2362, TLV2362Y

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

SLOS195B ± FEBRUARY 1997 ± REVISED OCTOBER 1998

TLV2362Y chip information

This chip, when properly assembled, has characteristics similar to the TLV2362. Thermal compression or ultrasonic bonding can be used on the doped-aluminum bonding pads. Chips can be mounted with conductive epoxy or a gold-silicon preform.

	Bonding-Pad Assignments
(1)	(8)	(7)		VCC+
				(8)
			(3)
			1IN+	+	(1)
			(2)	±	1OUT
			1IN±		(5)
			(7)	+	2IN+
			2OUT	±	(6)
39					2IN±
(2)		(6)		(4)
				VCC±
			Chip Thickness: 15 Mils Typical
			Bonding Pads: 4 × 4 Mils Minimum
(3)	(4)	(5)	TJ(max) = 150°C
			Tolerances Are ±10%.
			All Dimensions Are in Mils.
			Pin (4) is Connected Internally to Backside of Chip.
	39

4	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2361, TLV2361Y, TLV2362, TLV2362Y

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

SLOS195B ± FEBRUARY 1997 ± REVISED OCTOBER 1998

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)²

Supply voltage, VCC+ (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . 3.5 V
Supply voltage, VCC± (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . ±3.5 V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . ±3.5 V
Input voltage, VI (any input) (see Notes 1 and 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . VCC±
Output voltage, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . ±3.5 V
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . 20 mA
Duration of short-circuit current at (or below) 25°C (output shorted to GND) . . . . . . . . . . . . . .	. . . . . Unlimited
Package thermal impedance, θJA (see Note 4): D package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . 197°C/W
DBV package . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . 347°C/W
P package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . 104°C/W
PW package . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . 243°C/W
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	±65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . 260°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC±.

2.Differential voltages are at IN+ with respect to IN±.

3.All input voltage values must not exceed VCC.

4.The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace length of zero.

recommended operating conditions

	C SUFFIX		I SUFFIX		UNIT
	MIN	MAX	MIN	MAX
Supply voltage, VCC	±1	±2.5	±1	±2.5	V
Operating free-air temperature, TA	0	70	±40	85	°C

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5

TLV2361, TLV2361Y, TLV2362, TLV2362Y

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

SLOS195B ± FEBRUARY 1997 ± REVISED OCTOBER 1998

TLV2361C electrical characteristics, VCC± = ±1.5 V (unless otherwise noted)

	PARAMETER	TEST CONDITIONS		TA	TLV2361C			UNIT
					MIN	TYP	MAX
VIO	Input offset voltage	VO = 0,	VIC = 0	25°C		1	6	mV
				0°C to 70°C			7.5
IIO	Input offset current	VO = 0,	VIC = 0	25°C		5	100	nA
				0°C to 70°C			150
IIB	Input bias current	VO = 0,	VIC = 0	25°C		20	150	nA
				0°C to 70°C			250
VIC	Common-mode input voltage	|VIO| ≤ 7.5 mV		25°C	±0.5			V
				0°C to 70°C	±0.5
VOM+	Maximum positive-peak output voltage	RL = 10 kΩ		25°C	1.2	1.4		V
		RL ≥ 10 kΩ		0°C to 70°C	1.2
VOM±	Maximum negative-peak output voltage	RL = 10 kΩ		25°C	±1.2	±1.4		V
		RL ≥ 10 kΩ		0°C to 70°C	±1.2
ICC	Supply current (package)	VO = 0,	No load	25°C		1.4	2.25	mA
				0°C to 70°C			2.75
AVD	Large-signal differential voltage amplification	VO = ±1 V,	RL = 10 kΩ	25°C	60	80		dB
CMRR	Common-mode rejection ratio	VIC = ±0.5 V		25°C		75		dB
kSVR	Supply-voltage rejection ratio	VCC± = ±1.5 V to ±2.5 V		25°C		80		dB

TLV2361C operating characteristics, VCC± = ±1.5 V, TA = 25°C

	PARAMETER		TEST CONDITIONS		TLV2361C			UNIT
					MIN	TYP	MAX
SR	Slew rate	AV = 1,	VI = ±0.5 V			2.5		V/μs
B1	Unity-gain bandwidth	AV = 40,	RL = 10 kΩ,	CL = 100 pF		6		MHz
		RS = 100 Ω,	RF = 10 kΩ,
Vn	Equivalent input noise voltage			f = 1 kHz		9		nV/√	Hz

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