TEXAS INSTRUMENTS TLV2332, TLV2332Y, TLV2334, TLV2334Y Technical data

TLV2332		TLV2332, TLV2332Y, TLV2334, TLV2334Y
		LinCMOS LOW-VOLTAGE MEDIUM-POWER
		OPERATIONAL AMPLIFIERS
		SLOS189 ± FEBRUARY 1997

DWide Range of Supply Voltages Over Specified Temperature Range:

TA = ±40°C to 85°C . . . 2 V to 8 V

DFully Characterized at 3 V and 5 V

DSingle-Supply Operation

DCommon-Mode Input-Voltage Range

Extends Below the Negative Rail and up to VDD ±1 V at TA = 25°C

DOutput Voltage Range Includes Negative Rail

DHigh Input Impedance . . . 1012 Ω Typ

DESD-Protection Circuitry

DDesigned-In Latch-Up Immunity

description

The TLV233x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike the TLV2322 which is optimized for ultra-low power, the TLV233x is designed to provide a combination of low power and good ac performance. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input-voltage range includes the negative rail and extends to within 1 V of the positive rail.

Having a maximum supply current of only 310 μA per amplifier over full temperature range, the TLV233x devices offer a combination of good ac performance and microampere supply currents. From a 3-V power supply, the amplifier's typical slew rate is 0.38 V/μs and its bandwidth is 300 kHz.

TLV2332

D OR P PACKAGE

(TOP VIEW)

1OUT		1	8		VDD
1IN ±
		2	7		2OUT
1IN +		3	6		2IN ±
VDD±/ GND		4	5		2IN +

TLV2332

PW PACKAGE (TOP VIEW)

1OUT			1	8			VDD +
1IN±			2	7			2OUT
1IN +			3	6			2IN ±
VDD ±/ GND			4	5			2IN +

TLV2334

D OR N PACKAGE

(TOP VIEW)

1OUT				1	14	4OUT
1IN ±				2	13	4IN ±
1IN +				3	12	4IN +
VDD +				4	11	VDD ± / GND
2IN +				5	10	3IN +
2N ±				6	9	3IN ±
2OUT				7	8	3OUT
				TLV2334
			PW PACKAGE
				(TOP VIEW)
1OUT				1	14	4OUT
1IN ±						4IN ±
1IN +						4IN +
VDD +						VDD ± / GND
2IN +						3IN +
2IN ±						3IN ±
2OUT				7	8	3OUT

AVAILABLE OPTIONS

		V max		PACKAGED DEVICES			CHIP FORM§
	TA	IO	SMALL OUTLINE²	PLASTIC DIP	PLASTIC DIP	TSSOP³
		AT 25°C					(Y)
			(D)	(N)	(P)	(PW)
	±40°C to 85°C	9 mV	TLV2332ID	Ð	TLV2332IP	TLV2332IPWLE	TLV2332Y
		10 mV	TLV2334ID	TLV2334IN	Ð	TLV2334IPWLE	TLV2334Y

² The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2332IDR).

³ The PW package is only available left-end taped and reeled (e.g., TLV2332IPWLE). § Chip forms are tested at 25°C only.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinCMOS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1997, Texas Instruments Incorporated

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

1

TLV2332, TLV2332Y, TLV2334, TLV2334Y

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 ± FEBRUARY 1997

description (continued)

These amplifiers offer a level of ac performance greater than that of many other devices operating at comparable power levels. The TLV233x operational amplifiers are especially well suited for use in low-current or battery-powered applications.

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications.

To facilitate the design of small portable equipment, the TLV233x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline package (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.

The device inputs and outputs are designed to withstand ±100-mA currents without sustaining latch-up. The TLV233x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

TLV2332Y chip information

This chip, when properly assembled, display characteristics similar to the TLV2332. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.

								BONDING PAD ASSIGNMENTS
							(5)	(4)			(3)
							(6)				(2)
			59				(7)	(8)			(1)
									72

					VDD
		(3)					(8)
	1IN +			+
									(1)		1OUT
		(2)
	1IN ±			±
									(5)		2IN +
				+
	2OUT	(7)
									(6)
							±				2IN ±
							(4)
					VDD ± / GND

CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C

TOLERANCES ARE ± 10%.

ALL DIMENSIONS ARE IN MILS.

PIN (4) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP.

2	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2332, TLV2332Y, TLV2334, TLV2334Y

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 ± FEBRUARY 1997

TLV2334Y chip information

This chip, when properly assembled, displays characteristics similar to the TLV2334. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.

																																	BONDING PAD ASSIGNMENTS																																																																								VDD
																																																																																																						1IN +		(3)		(4)		(1)
								(14)												(13)																			(12) (11)																					(10)													(9)						(8)																										+					1OUT
																																																																																																								(2)
																																																																																																						1IN ±			±
																																																																																																								(5)
																																																																																																						2IN +			+			(7)		2OUT
																																																																																																								(6)
																																																																																																						2IN ±			±
				68																																																																																																		3IN +		(10)	+			(8)		3OUT
																																																																																																								(9)
																																																																																																						3IN ±			±
																																																																																																								(12)
																																																																																																						4IN +			+			(14)		4OUT
								(1)												(2)																			(3)											(4)										(5)													(6)						(7)																									(13)
																																																																																																						4IN ±			±	(11)
																																																			108
																																																																																																								VDD± /GND
																																																																																																						CHIP THICKNESS: 15 MILS TYPICAL
																																																																																																						BONDING PADS: 4 × 4 MILS MINIMUM
																																																																																																						TJmax = 150°C
																																																																																																						TOLERANCES ARE ± 10%.
																																																																																																						ALL DIMENSIONS ARE IN MILS.

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

3

TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 ± FEBRUARY 1997
equivalent schematic (each amplifier)
			VDD
		P3	P4
					R6
P1		P2		N5
IN ±			R2
R1
IN +				C1	P5	P6
			R5
			N3			OUT
				N4
	N1	N2			N6
R3	D1	R4	D2			N7
					R7
			GND

ACTUAL DEVICE COMPONENT COUNT²

COMPONENT	TLV2332	TLV2334
Transistors	54	108
Resistors	14	28
Diodes	4	8
Capacitors	2	4

²Includes both amplifiers and all ESD, bias, and trim circuitry.

4	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2332, TLV2332Y, TLV2334, TLV2334Y

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 ± FEBRUARY 1997

absolute maximum ratings over operating free-air temperature (unless otherwise noted)²

Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . . 8 V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . VDD ±
Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . ±0.3 V to VDD
Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . ± 5 mA
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . ± 30 mA
Duration of short-circuit current at (or below) TA = 25°C (see Note 3) . . . . . . . .	. . . . . . . . . . . . . . . . . unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	See Dissipation Rating Table
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . ±40°C to 85°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . ±65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . 260°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.

2.Differential voltages are at the noninverting input with respect to the inverting input.

3.The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded (see application section).

DISSIPATION RATING TABLE

	PACKAGE	TA ≤ 25°C	DERATING FACTOR	TA = 85°C
		POWER RATING	ABOVE TA = 25°C	POWER RATING
	D±8	725 mW	5.8 mW/°C	377 mW
	D±14	950 mW	7.6 mW/°C	494 mW
	N	1575 mW	12.6 mW/°C	819 mW
	P	1000 mW	8.0 mW/°C	520 mW
	PW±8	525 mW	4.2 mW/°C	273 mW
	PW±14	700 mW	5.6 mW/°C	364 mW

recommended operating conditions

			MIN	MAX	UNIT
	Supply voltage, VDD		2	8	V
	Common-mode input voltage, VIC	VDD = 3 V	± 0.2	1.8	V
		VDD = 5 V	± 0.2	3.8
	Operating free-air temperature, TA		± 40	85	°C

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

5

TLV2332, TLV2332Y, TLV2334, TLV2334Y

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 ± FEBRUARY 1997

TLV2332I electrical characteristics at specified free-air temperature

TEST

TLV2332I

PARAMETER

T ²

UNIT

V

DD

= 3 V

V

DD

= 5 V

CONDITIONS

A

MIN

TYP

MAX

MIN

TYP

MAX

VO = 1 V,

°

0.6

9

1.1

9

VIC = 1 V,

25 C

VIO

Input offset voltage

mV

RS

= 50 Ω,

Full range

11

11

RL = 100 kΩ

αVIO

Average temperature coefficient of

25°C to

1

1.7

μV/°C

input offset voltage

85°C

IIO

Input offset current (see Note 4)

VO = 1 V,

25°C

0.1

0.1

pA

V

= 1 V

°

22

1000

24

1000

IC

85 C

IIB

Input bias current (see Note 4)

VO = 1 V,

25°C

0.6

0.6

pA

V

= 1 V

°

175

2000

200

2000

IC

85 C

25°C

± 0.2

± 0.3

± 0.2

± 0.3

to

to

to

to

VICR

Common-mode input

2

2.3

4

4.2

V

voltage range (see Note 5)

± 0.2

± 0.2

Full range

to

to

1.8

3.8

V

= 1 V,

°

1.75

1.9

3.2

3.9

VOH

High-level output voltage

IC

25 C

V

VID = 100 mV,

Full range

1.7

3

IOH = ± 1 mA

V

= 1 V,

°

115

150

95

150

VOL

Low-level output voltage

IC

25 C

mV

VID = ±100 mV,

Full range

190

190

IOL = 1 mA

V

= 1 V,

°

25

83

25

170

Large-signal differential

IC

25 C

AVD

RL

= 100 kΩ,

V/mV

voltage amplification

Full range

15

15

See Note 6

CMRR

Common-mode rejection ratio

VO = 1 V,

25°C

65

92

65

91

dB

VIC = VICRmin,

Full range

60

60

RS = 50 Ω

V

= 1 V,

°

70

94

70

94

kSVR

Supply-voltage rejection ratio

IC

= 1 V,

25 C

dB

VO

( VDD / VIO)

Full range

65

65

RS

= 50 Ω

V

= 1 V,

°

160

500

210

560

IDD

Supply current

O

25 C

μA

VIC = 1 V,

Full range

620

800

No load

² Full range is ± 40°C to 85°C.

NOTES:

4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5.This range also applies to each input individually.

6.At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

6	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2332, TLV2332Y, TLV2334, TLV2334Y

LinCMOS

LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 ± FEBRUARY 1997

TLV2332I operating characteristics at specified free-air temperature, VDD = 3 V

PARAMETER

TEST CONDITIONS

TA

TLV2332I

UNIT

MIN

TYP

MAX

V

= 1 V,

V

I(PP)

= 1 V,

°

0.38

IC

25 C

SR

Slew rate at unity gain

RL = 100 kΩ,

CL = 20 pF,

V/μs

85°C

0.29

See Figure 34

f =1 kHz,

RS = 20 Ω,

25°C

Vn

Equivalent input noise voltage

32

nV/√ Hz

See Figure 35

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

25°C

34

kHz

R

L

= 100 kΩ,

See Figure 34

°

32

85 C

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

25°C

300

kHz

R

L

= 100 kΩ,

See Figure 36

°

235

85 C

VI = 10 mV,

f = B1,

± 40°C

42°

φm

Phase margin

CL = 20 pF,

RL = 100 kΩ,

25°C

39°

See Figure 36

85°C

36°

TLV2332I operating characteristics at specified free-air temperature, VDD = 5 V

PARAMETER

TEST CONDITIONS

TA

TLV2332I

UNIT

MIN

TYP

MAX

VIC = 1 V,

VI(PP) = 1 V

25°C

0.43

Ω

85°C

0.35

SR

Slew rate at unity gain

RL = 100 k

,

V/μs

C

L

= 20 pF,

°

0.40

VI(PP) = 2.5 V

25 C

See Figure 34

85°C

0.32

f =1 kHz,

RS = 20 Ω,

25°C

Vn

Equivalent input noise voltage

32

nV/√ Hz

See Figure 35

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

25°C

55

kHz

R

L

= 100 kΩ,

See Figure 34

°

45

85 C

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

25°C

525

kHz

R

L

= 100 kΩ,

See Figure 36

°

370

85 C

VI = 10 mV,

f = B1,

± 40°C

43°

φm

Phase margin

CL = 20 pF,

RL = 100 kΩ,

25°C

40°

See Figure 36

85°C

38°

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

7

TLV2332, TLV2332Y, TLV2334, TLV2334Y

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 ± FEBRUARY 1997

TLV2334I electrical characteristics at specified free-air temperature

TLV2334I

PARAMETER

TEST CONDITIONS

T ²

UNIT

V

DD

= 3 V

V

DD

= 5 V

A

MIN

TYP

MAX

MIN

TYP

MAX

V

O

= 1 V,

V

IC

= 1 V,

°

0.6

10

1.1

10

25 C

VIO

Input offset voltage

RS = 50 Ω,

mV

Full range

12

12

RL = 100 kΩ

αVIO

Average temperature coefficient

25°C to

1

1.7

μV/°C

of input offset voltage

85°C

IIO

Input offset current (see Note 4)

VO = 1 V,

VIC = 1 V

25°C

0.1

0.1

pA

85°C

22

1000

24

1000

IIB

Input bias current (see Note 4)

VO = 1 V,

VIC = 1 V

25°C

0.6

0.6

pA

85°C

175

2000

200

2000

25°C

± 0.2

± 0.3

± 0.2

± 0.3

to

to

to

to

V

VICR

Common-mode input voltage

2

2.3

4

4.2

range (see Note 5)

± 0.2

± 0.2

Full range

to

to

V

1.8

3.8

V

IC

= 1 V,

°

1.75

1.9

3.2

3.9

VOH

High-level output voltage

25 C

V

VID = 100 mV,

Full range

1.7

3

IOH = ± 1 mA

V

IC

= 1 V,

°

115

150

95

150

VOL

Low-level output voltage

25 C

mV

VID = ±100 mV,

Full range

190

190

IOL = 1 mA

Large-signal differential

VIC = 1 V,

25°C

25

83

25

170

AVD

RL = 100 kΩ,

V/mV

voltage amplification

Full range

15

15

See Note 6

V

O

= 1 V,

°

65

92

65

91

CMRR

Common-mode rejection ratio

25 C

dB

VIC = VICRmin,

Full range

60

60

RS = 50 Ω

V = 3 V to 5 V,

°

70

94

70

94

kSVR

Supply-voltage rejection ratio

DD

25 C

dB

VIC = 1 V, VO = 1 V,

( VDD / VIO)

Full range

65

65

RS = 50 Ω

IDD

Supply current

VO = 1 V,

VIC = 1 V,

25°C

320

1000

420

1120

μA

No load

Full range

1200

1600

² Full range is ± 40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5.This range also applies to each input individually.

6.At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

8	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

TLV2332, TLV2332Y, TLV2334, TLV2334Y

LinCMOS

LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 ± FEBRUARY 1997

TLV2334I operating characteristics at specified free-air temperature, VDD = 3 V

PARAMETER

TEST CONDITIONS

TA

TLV2334I

UNIT

MIN

TYP

MAX

V

= 1 V,

V

= 1 V,

°

0.38

IC

I(PP)

25 C

V/μs

SR

Slew rate at unity gain

RL = 100 kΩ,

CL = 20 pF,

85°C

0.29

See Figure 34

f = 1 kHz,

RS = 20 Ω,

25°C

Vn

Equivalent input noise voltage

32

nV/√ Hz

See Figure 35

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

25°C

34

kHz

R

L

= 100 kΩ,

See Figure 34

°

32

85 C

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

25°C

300

kHz

R

L

= 100 kΩ,

See Figure 36

°

235

85 C

VI = 10 mV,

f = B1,

± 40°C

42°

φm

Phase margin

CL = 20 pF,

25°C

39°

RL = 100 kΩ,

See Figure 36

85°C

36°

TLV2334I operating characteristics at specified free-air temperature, VDD = 5 V

PARAMETER

TEST CONDITIONS

TA

TLV2334I

UNIT

MIN

TYP

MAX

VIC = 1 V,

VI(PP) = 1 V

25°C

0.43

Ω

85°C

0.35

SR

Slew rate at unity gain

RL = 100 k

,

V/μs

C

L

= 20 pF,

°

0.40

VI(PP) = 2.5 V

25 C

See Figure 34

85°C

0.32

f = 1 kHz,

RS = 20 Ω,

25°C

Vn

Equivalent input noise voltage

32

nV/√ Hz

See Figure 35

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

25°C

55

kHz

R

L

= 100 kΩ,

See Figure 34

°

45

85 C

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

25°C

525

kHz

R

L

= 100 kΩ,

See Figure 36

°

370

85 C

VI = 10 mV,

f = B1,

± 40°C

43°

φm

Phase margin

CL = 20 pF,

RL = 100 kΩ,

25°C

40°

See Figure 36

85°C

38°

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

9

TLV2332, TLV2332Y, TLV2334, TLV2334Y

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 ± FEBRUARY 1997

TLV2332Y electrical characteristics, TA = 25°C

						TLV2332Y
	PARAMETER	TEST CONDITIONS			VDD = 3 V		VDD = 5 V		UNIT
				MIN	TYP	MAX	MIN TYP	MAX
VIO	Input offset voltage	VO = 1 V,	VIC = 1 V,		0.6		1.1		mV
		RS = 50 Ω,	RL = 100 kΩ
IIO	Input offset current (see Note 4)	VO = 1 V,	VIC = 1 V		0.1		0.1		pA
IIB	Input bias current (see Note 4)	VO = 1 V,	VIC = 1 V		0.6		0.6		pA
	Common-mode input voltage				± 0.3		± 0.3
VICR					to		to		V
	range (see Note 5)
					2.3		4.2
VOH	High-level output voltage	VIC = 1 V,	VID = 100 mV,		1.9		3.9		V
		IOH = ± 1 mA
VOL	Low-level output voltage	VIC = 1 V,	VID = 100 mV,		115		95		mV
		IOL = 1 mA
AVD	Large-signal differential voltage	VIC = 1 V,	RL = 100 kΩ,		83		170		V/mV
	amplification	See Note 6
CMRR	Common-mode rejection ratio	VO = 1 V,	VIC = VICRmin,		92		91		dB
		RS = 50 Ω
kSVR	Supply-voltage rejection ratio	VO = 1 V,	VIC = 1 V,		94		94		dB
	( VDD / VID)	RS = 50 Ω
IDD	Supply current	VO = 1 V,	VIC = 1 V,		160		210		μA
		No load

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5.This range also applies to each input individually.

6.At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

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