Texas Instruments CY74FCT540CTQCT, CY74FCT540CTQC, CY74FCT541TSOCT, CY74FCT541TSOC, CY74FCT541CTSOCT Datasheet

Data sheet acquired from Cypress Semiconductor Corporation.

Data sheet modified to remove devices not offered.

CY54/74FCT540T

CY54/74FCT541T

SCCS029 - May 1994 - Revised March 2000

8-Bit Buffers/Line Drivers

Features

•Function, pinout, and drive compatible with FCT and F logic

•FCT-C speed at 4.1 ns max. (Com’l) FCT-A speed at 4.8 ns max. (Com’l)

•Reduced VOH (typically = 3.3V) versions of equivalent FCT functions

•Edge-rate control circuitry for significantly improved noise characteristics

•Power-off disable feature

•ESD > 2000V

•Matched rise and fall times

•Fully compatible with TTL input and output logic levels

• Sink current	64 mA (Com’l), 48 mA (Mil)
Source current	32 mA (Com’l), 12 mA (Mil)

Functional Description

The FCT540T inverting buffer/line driver and the FCT541T non-inverting buffer/line driver are designed to be employed as memory address drivers, clock drivers, and bus-oriented transmitters/receivers. The devices provide speed and drive capabilities equivalent to their fastest bipolar logic counterparts while reducing power dissipation. The input and output voltage levels allow direct interface with TTL, NMOS, and CMOS devices without external components.

The outputs are designed with a power-off disable feature to allow for live insertion of boards.

• Extended commercial range of −40˚C to +85˚C

Logic Block Diagram—FCT540T

Pin Configurations

CERDIP/SOIC/QSOP

OEA

OEB

Top View

A

1

20

VCC

D0

0

OE

O

D0

2

19

D1

3

18

OEB

D1

1

O

0

O

D2

4

17

D2

2

O

1

O

D3

5

16

O2

FCT540T

D3

O

3

D4

6

15

O3

D5

7

14

O

4

D4

O4

D6

8

13

O5

D5

D7

9

12

6

O

5

O

GND

10

11

7

O

D6

O6

D7

7

O

Logic Block Diagram—FCT541T

CERDIP/DIP/SOIC/QSOP

OE

A

OE

B

Top View

A

1

20

VCC

D0

O0

OE

D0

2

19

D1

3

OEB

D1

O1

18

O0

D2

4

D2

O2

17

O1

D3

5 FCT541T

16

O2

D3

O3

D4

6

15

O3

D4

O4

D5

7

14

O4

D6

8

13

O5

D5

O5

D7

9

12

O6

D6

O6

GND

10

11

O7

D7

O7

Copyright © 2000, Texas Instruments Incorporated

CY54/74FCT540T

CY54/74FCT541T

Function Table FCT540T[1]

			Inputs
		A			B	D	Output
	OE			OE
	L			L		L	H
	L			L		H	L
	H			H		X	Z

Function Table FCT541T[1]

			Inputs
		A			B	D	Output
	OE			OE
	L			L		L	L
	L			L		H	H
	H			H		X	Z

Maximum Ratings[2, 3]

(Above which the useful life may be impaired. For user guidelines, not tested.)

Electrical Characteristics Over the Operating Range

Storage Temperature .................................	–65°C to +150°C
Ambient Temperature with	–65°C to +135°C
Power Applied.............................................
Supply Voltage to Ground Potential...............	–0.5V to +7.0V
DC Input Voltage ...........................................	–0.5V to +7.0V
DC Output Voltage.........................................	–0.5V to +7.0V
DC Output Current (Maximum Sink Current/Pin) ......		120 mA
Power Dissipation ..........................................................		0.5W
Static Discharge Voltage............................................		>2001V

(per MIL-STD-883, Method 3015)

Operating Range

		Ambient
Range	Range	Temperature	VCC
Commercial	T, AT, CT	–40°C to +85°C	5V ± 5%
Military[4]	All	–55°C to +125°C	5V ± 10%

Parameter		Description		Test Conditions			Min.	Typ.[5]	Max.	Unit
VOH		Output HIGH Voltage	VCC = Min., IOH = –32 mA			Com’l	2.0			V
			VCC = Min., IOH = –15 mA			Com’l	2.4	3.3		V
			VCC = Min., IOH = –12 mA			Mil	2.4	3.3		V
VOL		Output LOW Voltage	VCC = Min., IOL = 64 mA			Com’l		0.3	0.55	V
			VCC = Min., IOL = 48 mA			Mil		0.3	0.55	V
VIH		Input HIGH Voltage					2.0			V
VIL		Input LOW Voltage							0.8	V
VH		Hysteresis[6]	All inputs					0.2		V
VIK		Input Clamp Diode Voltage	VCC = Min., IIN = –18 mA					–0.7	–1.2	V
II		Input HIGH Current	VCC = Max., VIN = VCC						5	A
IIH		Input HIGH Current	VCC = Max., VIN = 2.7V						±1	A
IIL		Input LOW Current	VCC = Max., VIN = 0.5V						±1	A
IOZH		Off State HIGH-Level Output	VCC = Max., VOUT = 2.7V						10	A
		Current
IOZL		Off State LOW-Level	VCC = Max., VOUT = 0.5V						–10	A
		Output Current
I	OS	Output Short Circuit Current[7]	V	= Max,. V	= 0.0V		–60	–120	–225	mA
			CC	OUT
IOFF		Power-Off Disable	VCC = 0V, VOUT = 4.5V						±1	A

Notes:

1.H = HIGH Voltage Level L = LOW Voltage Level X = Don’t Care

Z = High Impedance

2.Unless otherwise noted, these limits are over the operating free-air temperature range.

3.Unused inputs must always be connected to an appropriate logic voltage level, preferably either VCC or ground.

4.TA is the “instant on” case temperature.

5.Typical values are at VCC=5.0V, TA=+25˚C ambient.

6.This parameter is specified but not tested.

7.Not more than one output should be shorted at a time. Duration of short should not exceed one second. The use of high-speed test apparatus and/or sample and hold techniques are preferable in order to minimize internal chip heating and more accurately reflect operational values. Otherwise prolonged shorting of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parametric tests. In any sequence of parametric tests, IOS tests should be performed last.

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CY54/74FCT540T

CY54/74FCT541T

Capacitance[6]

Parameter	Description	Test Conditions	Typ. [5]	Max.	Unit
CIN	Input Capacitance		5	10	pF
COUT	Output Capacitance		9	12	pF

Power Supply Characteristics

	Parameter		Description			Test Conditions		Typ.[5]	Max.	Unit
ICC			Quiescent Power Supply Current	VCC=Max., VIN ≤ 0.2V, VIN ≥ VCC–0.2V				0.1	0.2	mA
	I	CC	Quiescent Power Supply Current	V	CC	= Max., V	= 3.4V, f = 0, Outputs Open[8]	0.5	2.0	mA
			(TTL inputs)			IN	1
ICCD			Dynamic Power Supply Current[9]	VCC = Max., 50% Duty Cycle, Outputs Open,				0.06	0.12	mA/MHz
				One Bit Toggling at f1 = 10 MHz,
				OEA=OEB=GND, or OEA=GND, OEB=VCC,
				VIN ≤ 0.2V or VIN ≥ VCC–0.2V
I	C		Total Power Supply Current[10]	V =Max., 50% Duty Cycle, Outputs Open,				0.7	1.4	mA
					CC
				One Bit Toggling at f1=10 MHz,
				OEA=OEB=GND, or OEA=GND, OEB=VCC,
				VIN≤0.2V or VIN≥VCC–0.2V
				VCC = Max., 50% Duty Cycle, Outputs Open,				1.0	2.4	mA
				One Bit Toggling at f1=10 MHz,
				OEA=OEB=GND, or OEA=GND, OEB=VCC,
				VIN = 3.4V or VIN = GND
				VCC = Max., 50% Duty Cycle, Outputs Open,				1.3	2.6[11]	mA
				Eight Bits Toggling at f1= 2.5 MHz,
				OEA=OEB=GND, or OEA=GND, OEB=VCC,
				VIN ≤ 0.2V or VIN ≥ VCC –0.2V
				VCC = Max., 50% Duty Cycle, Outputs Open,				3.3	10.6[11]	mA
				Eight Bits Toggling at f1=2.5 MHz,
				OEA=OEB=GND, or OEA=GND, OEB=VCC,
				VIN = 3.4V or VIN = GND
Notes:

8.Per TTL driven input (VIN=3.4V); all other inputs at VCC or GND.

9.This parameter is not directly testable, but is derived for use in Total Power Supply calculations.

10. IC	=	IQUIESCENT + IINPUTS + IDYNAMIC
IC	=	ICC+ ICCDHNT+ICCD(f0/2 + f1N1)
ICC	=	Quiescent Current with CMOS input levels
ICC =		Power Supply Current for a TTL HIGH input (VIN=3.4V)
DH	=	Duty Cycle for TTL inputs HIGH
NT	=	Number of TTL inputs at DH
ICCD =		Dynamic Current caused by an input transition pair (HLH or LHL)
f0	=	Clock frequency for registered devices, otherwise zero
f1	=	Input signal frequency
N1	=	Number of inputs changing at f1

All currents are in milliamps and all frequencies are in megahertz.

11. Values for these conditions are examples of the ICC formula. These limits are specified but not tested.

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