INA333
www.ti.com |
SBOS445–JULY 2008 |
Micro-Power (50μA), Zerø-Drift, Rail-to-Rail Out
Instrumentation Amplifier
∙LOW OFFSET VOLTAGE: 25μV (max), G ≥ 100
∙LOW DRIFT: 0.1μV/°C, G ≥ 100
∙LOW NOISE: 50nV/√Hz, G ≥ 100
∙HIGH CMRR: 100dB (min), G ≥ 10
∙LOW INPUT BIAS CURRENT: 200pA (max)
∙SUPPLY RANGE: +1.8V to +5.5V
∙INPUT VOLTAGE: (V–) +0.1V to (V+) –0.1V
∙OUTPUT RANGE: (V–) +0.05V to (V+) –0.05V
∙LOW QUIESCENT CURRENT: 50μA
∙OPERATING TEMPERATURE: –40°C to +125°C
∙RFI FILTERED INPUTS
∙MSOP-8 AND DFN-8 PACKAGES
∙BRIDGE AMPLIFIERS
∙ECG AMPLIFIERS
∙PRESSURE SENSORS
∙MEDICAL INSTRUMENTATION
∙PORTABLE INSTRUMENTATION
∙WEIGH SCALES
∙THERMOCOUPLE AMPLIFIERS
∙RTD SENSOR AMPLIFIERS
∙DATA ACQUISITION
The INA333 is a low-power, precision instrumentation amplifier offering excellent accuracy. The versatile 3-op amp design, small size, and low power make it ideal for a wide range of portable applications.
A single external resistor sets any gain from 1 to 1000. The INA333 is designed to use an industry-standard gain equation: G = 1 + (100kΩ/RG).
The INA333 provides very low offset voltage (25μV, G ≥ 100), excellent offset voltage drift (0.1μV/°C, G ≥ 100), and high common-mode rejection (100dB at G ≥ 10). It operates with power supplies as low as 1.8V (±0.9V), and quiescent current is only 50μA—ideal for battery-operated systems. Using autocalibration techniques to ensure excellent precision over the extended industrial temperature range, the INA333 also offers exceptionally low noise density (50nV/√Hz) that extends down to dc.
The INA333 is available in both MSOP-8 and DFN-8 surface-mount packages and is specified over the TA = –40°C to +125°C temperature range.
Sample Request
Click Here
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7 |
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VIN− |
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RFI Filtered Inputs |
150kΩ |
150kΩ |
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A1 |
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RFI Filtered Inputs |
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1 |
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50kΩ |
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R |
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A3 |
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VOUT |
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50kΩ |
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RFI Filtered Inputs |
150kΩ |
150kΩ |
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A2 |
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REF |
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VIN+ |
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RFI Filtered Inputs |
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INA333 |
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V− |
100kΩ |
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G = 1 + |
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RG |
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. |
Copyright © 2008, Texas Instruments Incorporated |
Products conform to specifications per the terms of the Texas |
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Instruments standard warranty. Production processing does not |
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necessarily include testing of all parameters. |
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INA333
SBOS445–JULY 2008 |
www.ti.com |
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
PRODUCT |
PACKAGE-LEAD |
PACKAGE DESIGNATOR |
PACKAGE MARKING |
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INA333 |
MSOP-8 |
DGK |
I333 |
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DFN-8(2) |
DRG |
I333A |
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(1)For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com.
(2)Available Q4, 2008.
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INA333 |
UNIT |
Supply voltage |
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+7 |
V |
Analog input voltage range(2) |
(V–) – 0.3 to (V+) + 0.3 |
V |
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Output short-circuit(3) |
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Continuous |
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Operating temperature range, TA |
–40 to +150 |
°C |
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Storage temperature range, TA |
–65 to +150 |
°C |
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Junction temperature, TJ |
+150 |
°C |
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Human body model (HBM) |
4000 |
V |
ESD rating |
Charged device model (CDM) |
1000 |
V |
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Machine model (MM) |
200 |
V |
(1)Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2)Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3V beyond the supply rails should be current limited to 10mA or less.
(3)Short-circuit to ground.
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DGK PACKAGE |
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DRG PACKAGE |
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MSOP-8 |
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DFN-8 |
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(TOP VIEW) |
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RG |
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RG |
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VIN− |
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RG |
1 |
Exposed |
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8 |
RG |
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V+ |
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VIN− |
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Thermal |
7 |
V+ |
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VIN+ |
3 |
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6 |
VOUT |
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Die Pad |
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VOUT |
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VIN+ |
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on |
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V− |
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5 |
REF |
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Underside |
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V− |
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REF |
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INA333 |
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INA333 |
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2 |
Submit Documentation Feedback |
Copyright © 2008, Texas Instruments Incorporated |
Product Folder Link(s): INA333
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INA333 |
www.ti.com |
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SBOS445–JULY 2008 |
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ELECTRICAL CHARACTERISTICS: VS = +1.8V to +5.5V |
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Boldface limits apply over the specified temperature range, TA = –40°C to +125°C. |
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At TA = +25°C, RL = 10kΩ, VREF = 0, and G = 1, unless otherwise noted. |
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INA333 |
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PARAMETER |
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TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
INPUT(1) |
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Offset voltage, RTI(2) |
VOSI |
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±10 ±25/G |
±25 ±75/G |
μV |
vs Temperature |
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±0.1 ±0.5/G |
μV/°C |
vs Power supply |
PSR |
1.8V ≤ VS ≤ 5.5V |
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±1 ±5/G |
±5 ±15/G |
μV/V |
Long-term stability |
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See note (3) |
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Turn-on time to specified VOSI |
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See Typical characteristics |
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Impedance |
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Differential |
ZIN |
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100 || 3 |
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GΩ || pF |
Common-mode |
ZIN |
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100 || 3 |
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GΩ || pF |
Common-mode voltage range |
VCM |
VO = 0V |
(V–) + 0.1 |
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(V+) – 0.1 |
V |
Common-mode rejection |
CMR |
DC to 60Hz |
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G = 1 |
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VCM = (V–) + 0.1V to (V+) – 0.1V |
80 |
90 |
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dB |
G = 10 |
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VCM = (V–) + 0.1V to (V+) – 0.1V |
100 |
110 |
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dB |
G = 100 |
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VCM = (V–) + 0.1V to (V+) – 0.1V |
100 |
115 |
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dB |
G = 1000 |
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VCM = (V–) + 0.1V to (V+) – 0.1V |
100 |
115 |
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dB |
INPUT BIAS CURRENT |
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Input bias current |
IB |
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±70 |
±200 |
pA |
vs Temperature |
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See Typical Characteristic curve |
pA/°C |
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Input offset current |
IOS |
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±50 |
±200 |
pA |
vs Temperature |
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See Typical Characteristic curve |
pA/°C |
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INPUT VOLTAGE NOISE |
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Input voltage noise |
eNI |
G = 100, RS = 0Ω |
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f = 10Hz |
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50 |
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nV/√Hz |
f = 100Hz |
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50 |
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nV/√Hz |
f = 1kHz |
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50 |
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nV/√Hz |
f = 0.1Hz to 10Hz |
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1 |
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μVPP |
Input current noise |
iN |
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f = 10Hz |
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100 |
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fA/√Hz |
f = 0.1Hz to 10Hz |
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2 |
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pAPP |
GAIN |
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Gain equation |
G |
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1 + (100kΩ/RG) |
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V/V |
Range of gain |
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1 |
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1000 |
V/V |
Gain error |
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VS = 5.5V, (V–) + 100mV ≤ VO ≤ (V+) – 100mV |
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G = 1 |
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±0.01 |
±0.1 |
% |
G = 10 |
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±0.05 |
±0.25 |
% |
G = 100 |
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±0.07 |
±0.25 |
% |
G = 1000 |
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±0.25 |
±0.5 |
% |
(1)Total VOS, Referred-to-input = (VOSI) + (VOSO/G).
(2)RTI = Referred-to-input.
(3)300-hour life test at +150°C demonstrated randomly distributed variation of approximately 1μV.
Copyright © 2008, Texas Instruments Incorporated |
Submit Documentation Feedback |
3 |
Product Folder Link(s): INA333
INA333
SBOS445–JULY 2008 |
www.ti.com |
ELECTRICAL CHARACTERISTICS: VS = +1.8V to +5.5V (continued)
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C, RL = 10kΩ, VREF = 0, and G = 1, unless otherwise noted.
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INA333 |
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PARAMETER |
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TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
GAIN (continued) |
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Gain vs Temperature |
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G = 1 |
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±1 |
±5 |
ppm/°C |
G > 1(4) |
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±15 |
±50 |
ppm/°C |
Gain nonlinearity |
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VS = 5.5V, (V–) + 100mV ≤ VO ≤ (V+) – 100mV |
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G = 1 to 1000 |
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RL = 10kΩ |
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10 |
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ppm |
OUTPUT |
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Output voltage swing from rail(5) |
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VS = 5.5V, RL = 10kΩ |
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See note (5) |
50 |
mV |
Capacitive load drive |
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500 |
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pF |
Short-circuit current |
ISC |
Continuous to common |
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–40, +5 |
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mA |
FREQUENCY RESPONSE |
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Bandwidth, –3dB |
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G = 1 |
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150 |
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kHz |
G = 10 |
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35 |
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kHz |
G = 100 |
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3.5 |
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kHz |
G = 1000 |
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350 |
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Hz |
Slew rate |
SR |
VS = 5V, VO = 4V Step |
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G = 1 |
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0.16 |
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V/μs |
G = 100 |
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0.05 |
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V/μs |
Settling time to 0.01% |
tS |
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G = 1 |
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VSTEP = 4V |
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50 |
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μs |
G = 100 |
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VSTEP = 4V |
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400 |
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μs |
Settling time to 0.001% |
tS |
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G = 1 |
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VSTEP = 4V |
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60 |
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μs |
G = 100 |
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VSTEP = 4V |
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500 |
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μs |
Overload recovery |
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50% overdrive |
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75 |
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μs |
REFERENCE INPUT |
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RIN |
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300 |
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kΩ |
Voltage range |
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V– |
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V+ |
V |
POWER SUPPLY |
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Voltage range |
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Single |
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+1.8 |
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+5.5 |
V |
Dual |
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±0.9 |
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±2.75 |
V |
Quiescent current |
IQ |
VIN = VS/2 |
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50 |
75 |
μA |
vs Temperature |
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80 |
μA |
TEMPERATURE RANGE |
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Specified temperature range |
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–40 |
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+125 |
°C |
Operating temperature range |
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–40 |
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+150 |
°C |
Thermal resistance |
θJA |
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MSOP |
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100 |
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°C/W |
DFN |
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65 |
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°C/W |
(4)Does not include effects of external resistor RG.
(5)See Typical Characteristics curve, Output Voltage Swing vs Output Current (Figure 29).
4 |
Submit Documentation Feedback |
Copyright © 2008, Texas Instruments Incorporated |
Product Folder Link(s): INA333
INA333
www.ti.com |
SBOS445–JULY 2008 |
At TA = +25°C, RL = 10kΩ, VREF = 0, and G = 1, unless otherwise noted.
INPUT OFFSET VOLTAGE
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VS = 5.5V |
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Population |
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−25.0 |
−22.5 −20.0 −17.5 −15.0 |
−12.5 |
−10.0 −7.5 −5.0 −2.5 0 2.5 5.0 7.5 10.0 |
12.5 |
15.0 |
17.5 |
20.0 |
22.5 |
25.0 |
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Input Offset Voltage (µV) |
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Figure 1.
OUTPUT OFFSET VOLTAGE
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VS = 5.5V |
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Population |
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−75.0 |
−67.5 −60.0 −52.5 −45.0 |
−37.5 |
−30.0 −22.5 −15.0 −7.5 0 7.5 15.0 22.5 30.0 37.5 |
45.0 |
52.5 |
60.0 |
67.5 |
75.0 |
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Output Offset Voltage (µV) |
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Figure 3.
OFFSET VOLTAGE vs COMMON-MODE VOLTAGE
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VS = 1.8V |
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−5 |
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VS = 5V |
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(µV) |
−10 |
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V |
−15 |
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−20 |
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−25 |
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0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
3.5 |
4.0 |
4.5 |
5.0 |
VCM (V)
Figure 5.
INPUT VOLTAGE OFFSET DRIFT (–40°C to +125°C)
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VS = 5.5V |
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Population |
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−0.10 |
−0.09 −0.08 −0.07 −0.06 |
−0.05 −0.04 −0.03 −0.02 −0.01 0 0.01 0.02 0.03 0.04 0.05 |
0.06 |
0.07 |
0.08 |
0.09 |
0.10 |
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Input Voltage Offset Drift (µV/°C) |
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Figure 2.
OUTPUT VOLTAGE OFFSET DRIFT (–40°C to +125°C)
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VS = 5.5V |
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Population |
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−0.50 |
−0.45 −0.40 −0.35 −0.30 |
−0.25 −0.20 −0.15 −0.10 −0.05 0 0.05 0.10 0.15 0.20 0.25 0.30 |
0.35 |
0.40 |
0.45 |
0.50 |
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Output Voltage Offset Drift (µV/°C) |
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Figure 4.
0.1Hz TO 10Hz NOISE
Gain = 1
Noise(1 V/div)
Time (1s/div)
Figure 6.
Copyright © 2008, Texas Instruments Incorporated |
Submit Documentation Feedback |
5 |
Product Folder Link(s): INA333
INA333
SBOS445–JULY 2008 |
www.ti.com |
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, RL = 10kΩ, VREF = 0, and G = 1, unless otherwise noted.
DCOutputNonlinearityError(%FSR)
0.1Hz TO 10Hz NOISE
Gain = 100
Noise(0.5 V/div)
Time (1s/div)
Figure 7.
NONLINEARITY ERROR
0.012 G = 1000
0.008
G = 100
G = 10
G = 1
0.004
0
−0.004
−0.008
−0.012
0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
3.5 |
4.0 |
4.5 |
5.0 |
5.5 |
VOUT (V)
SPECTRAL NOISE DENSITY
1000 |
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1000 |
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Output Noise |
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100 |
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100 |
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Current Noise |
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Input Noise |
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10 |
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10 |
VoltageNoiseDensity(nV/Hz)√ |
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(Output Noise) |
2 |
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(Input Noise)2 + |
CurrentNoiseDensity(fA/√Hz ) |
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Total Input-Referred Noise = |
G |
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1 |
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0.1 |
1 |
10 |
100 |
1k |
10k |
Frequency (Hz)
Figure 8.
LARGE SIGNAL RESPONSE
Gain = 1
OutputVoltage(1V/div)
Time (25 s/div)
Figure 9. |
Figure 10. |
LARGE-SIGNAL STEP RESPONSE |
SMALL-SIGNAL STEP RESPONSE |
Gain = 100 |
Gain = 1 |
OutputVoltage(1V/div) |
OutputVoltage(50mV/div) |
Time (100 s/div) |
Time (10 s/div) |
Figure 11. |
Figure 12. |
6 |
Submit Documentation Feedback |
Copyright © 2008, Texas Instruments Incorporated |
Product Folder Link(s): INA333
INA333
www.ti.com |
SBOS445–JULY 2008 |
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, RL = 10kΩ, VREF = 0, and G = 1, unless otherwise noted.
SMALL-SIGNAL STEP RESPONSE
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Gain = 100 |
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OutputVoltage(50mV/div) |
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Time (100 s/div) |
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Figure 13. |
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STARTUP SETTLING TIME |
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Gain = 1 |
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Supply |
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Supply(1V/div) |
VOUT |
V |
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V/div)(50 |
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OUT |
Time (50 s/div)
Figure 15.
COMMON-MODE REJECTION RATIO
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VS = 5.5V |
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Population |
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−100 |
−90 −80 −70 −60 |
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−40 |
−30 |
−20 −10 0 10 20 30 40 50 60 70 80 90 |
100 |
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CMRR (µV/V) |
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Figure 17.
SETTLING TIME vs GAIN
10000
Time( s) |
1000 |
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Gain (V/V) |
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Figure 14. |
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GAIN vs FREQUENCY |
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80 |
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G = 1000 |
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40 |
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G = 100 |
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Gain(dB) |
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G = 10 |
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G = 1 |
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−40 |
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1k |
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10k |
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100k |
1M |
Frequency (Hz)
Figure 16.
COMMON-MODE REJECTION RATIO vs TEMPERATURE
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10 |
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VS = ±2.75V |
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8 |
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G = 1 |
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VS = ±0.9V |
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V/V) |
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CMRR( |
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−2 |
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−6 |
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G = 100, |
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G = 1000 |
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−10 |
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−50 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
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Temperature (°C) |
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Figure 18.
Copyright © 2008, Texas Instruments Incorporated |
Submit Documentation Feedback |
7 |
Product Folder Link(s): INA333