Texas Instruments CY74FCT827CTSOCT, CY74FCT827CTSOC, CY74FCT827CTQCT, CY74FCT827CTQC, CY74FCT827ATSOCT Datasheet

10-Bit Buffe

r

CY54/74FCT827T

SCCS034 - September 1994 - Revised March 2000

Data sheet acquired from Cypress Semiconductor Corporation.
Data sheet modified to remove devices not offered.

Copyright © 2000, Texas Instruments Incorporated

Features

• Function,pinout,anddrivecompatiblewithFCT,F,and

AM29827 logic

• FCT-C speed at 4.4 ns max. (Com’l)
FCT-A speed at 5.0 ns max. (Com’l)

• Reduced V

OH

(typically = 3.3V) versions of equivalent

FCT functions

• Edge-rate control circuitry for significantly improved
noise characteristics

• Power-off disable feature

• ESD > 2000V

• Matched rise and fall times

• Fully compatible with TTL input and output logic levels

• Sink current 64 mA (Com’l),

32 mA (Mil)

Source current 32 mA (Com’l),

12 mA (Mil)

Functional Description

The FCT827T 10-bit bus driver provides high-performance
bus interface buffering for wide data/address paths or buses
carrying parity. The 10-bit buffers have NAND-ed output
enables for maximum control flexibility. The FCT827T is
designed forhigh-capacitance load drive capability ,while providing
low-capacitancebus loading at both inputs and outputs.All outputs
are designed for low-capacitance bus loading in the
high-impedance state and are designed with a power-off disable
feature toallow for live insertion of boards.

Logic Block Diagram Pin Configurations

Y

0

OE

1

Y1Y2Y3Y4Y

5

Y8Y

9

Y6Y

7

D0D1D2D3D4D

5

D8D

9

D6D

7

28

4

5678910

3
2
1

27

13
14
15
16
17

26

2524232221

20

11

12

19

D

4

D6D

5

Y

2

Y

5

18

NC

NC

Y

6

D

3

LCC/PLCC

Top View

NC

GND

Y

4

V

CC

D

8

D

9

Y

8

Y

9

OE

2

D

7

D

2

NC

OE

2

Y

3

Y

7

D

0

D

1

OE

1

Y

1

Y

0

1
2
3
4
5
6
7
8
9
10
11
12

16

17

18

19

20

24
23
22
21

13

14

V

CC

15

SOIC/QSOP

Top View

OE

1

D

1

D

2

D

3

D

4

D

5

D

6

D

7

D

8

Y

1

Y

2

Y

3

Y

4

Y

5

Y

6

Y

7

Y

8

GND

D

0

D

9

Y

0

Y

9

OE

2

Function Table

[1]

Inputs Outputs

FunctionOE

1

OE

2

D Y

L
L

L
L

L

H

L

H

Transparent

H
X

X

H

X
X

Z
Z

Three-State

Note:

1. H = HIGH Voltage Level. L = LOW Voltage Level. X = Don’t Care

CY54/74FCT827T

2

Maximum Ratings

[2, 3]

(Above which the useful life may be impaired. For user guide­lines, not tested.)

Storage Temperature .................................–65°C to +150°C
Ambient Temperature with

Power Applied.............................................–65°C to +135°C

Supply Voltage to Ground Potential...............–0.5V to +7.0V

DC Input Voltage............................................–0.5V to +7.0V

DC Output Voltage......................................... –0.5V to +7.0V

DC Output Current (Maximum Sink Current/Pin).......120 mA

Power Dissipation..........................................................0.5W

Static Discharge Voltage............................................>2001V
(per MIL-STD-883, Method 3015)

Operating Range

Range Range

Ambient

Temperature V

CC

Commercial All –40°C to + 85°C 5V ± 5%
Military

[4]

All –55°C to +125°C 5V ± 10%

Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions Min. Typ.

[5]

Max. Unit

V

OH

Output HIGH Voltage VCC= Min., IOH= –32 mA Com’l 2.0 V

VCC= Min., IOH= –15 mA Com’l 2.4 3.3 V
VCC= Min., IOH= –12 mA Mil 2.4 3.3 V

V

OL

Output LOW Voltage VCC= Min., IOL= 64 mA Com’l 0.3 0.55 V

VCC= Min., IOL= 32 mA Mil 0.3 0.55 V

V

IH

Input HIGH Voltage 2.0 V

V

IL

Input LOW Voltage 0.8 V

V

H

Hysteresis

[6]

All inputs 0.2 V

V

IK

Input Clamp Diode Voltage VCC= Min., IIN= –18 mA –0.7 –1.2 V

I

I

Input HIGH Current VCC= Max., VIN= V

CC

5 µA

I

IH

Input HIGH Current VCC= Max., VIN= 2.7V ±1 µA

I

IL

Input LOW Current VCC= Max., VIN= 0.5V ±1 µA

I

OZH

Off State HIGH-Level Output
Current

VCC= Max., V

OUT

= 2.7V 10 µA

I

OZL

Off State LOW-Level
Output Current

VCC = Max., V

OUT

= 0.5V –10 µA

I

OS

Output Short Circuit Current

[7]

VCC= Max., V

OUT

= 0.0V –60 –120 –225 mA

I

OFF

Power-Off Disable VCC= 0V, V

OUT

= 4.5V ±1 µA

Capacitance

[6]

Parameter Description Typ.

[5]

Max. Unit

C

IN

Input Capacitance 5 10 pF

C

OUT

Output Capacitance 9 12 pF

Notes:

2. Unless otherwise noted, these limits are over the operating free-air temperature range.

3. Unused inputs must always be connected to an appropriate logic voltage level, preferably either V

CC

or ground.

4. T

A

is the “instant on” case temperature.

5. Typical values are at V

CC

=5.0V, TA=+25˚C ambient.

6. This parameter is specified but not tested.

7. Not more than one output should be shorted at a time. Durationof short should not exceedone second. The use of high-speed test apparatus and/or sample
and hold techniques are preferable in order to minimize internal chip heating and more accurately reflect operational values. Otherwise prolonged shorting of
a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parametric tests. In any sequence of parameter
tests, I

OS

tests should be performed last.

CY54/74FCT827T

3

Power Supply Characteristics

Parameter Description Test Conditions Typ.

[5]

Max. Unit

I

CC

Quiescent Power Supply Current VCC=Max., VIN≤0.2V, VIN≥VCC–0.2V 0.1 0.2 mA

∆I

CC

Quiescent Power Supply Current
(TTL inputs HIGH)

VCC=Max., VIN=3.4V,

[8]

f1=0, Outputs Open

0.5 2.0 mA

I

CCD

Dynamic Power Supply
Current

[9]

VCC=Max., One Input Toggling,
50% Duty Cycle, Outputs Open,
OE1 or OE2=GND,
V

IN

≤0.2V or VIN≥VCC–0.2V

0.06 0.12 mA/MHz

I

C

Total Power Supply Current

[10]

VCC=Max., 50% Duty Cycle, OutputsOpen,
One Bit Toggling at f

1

=10 MHz,
OE1 or OE2=GND,
V

IN

≤0.2V or VIN≥VCC–0.2V

0.7 1.4 mA

VCC=Max.,50% Duty Cycle, Outputs Open,
One Bit Toggling at f

1

=10 MHz,
OE1 or OE2=GND, VIN=3.4V or VIN=GND

1.0 2.4 mA

VCC=Max., 50% Duty Cycle, OutputsOpen,
Ten Bits Toggling at f

1

=2.5 MHz,
OE1 or OE2=GND,
V

IN

≤0.2V or VIN≥VCC–0.2V

1.6 3.2

[11]

mA

VCC=Max., 50% Duty Cycle, OutputsOpen,
Ten Bits Toggling at f

1

=2.5 MHz,
OE1 or OE2=GND,VIN=3.4V or VIN=GND

4.1 13.2

[11]

mA

Notes:

8. Per TTL driven input (V

IN

=3.4V); all other inputs at VCC or GND.

9. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.

10. I

C

=I

QUIESCENT

+ I

INPUTS

+ I

DYNAMIC

IC=ICC+∆ICCDHNT+I

CCD(f0

/2 + f1N1)

I

CC

= Quiescent Current with CMOS input levels

∆I

CC

= Power Supply Current for a TTL HIGH input VIN=3.4V)

D

H

= Duty Cycle for TTL inputs HIGH

N

T

= Number of TTL inputs at D

H

I

CCD

= Dynamic Current caused by an input transition pair HLH or LHL)

f

0

= Clock frequency for registered devices, otherwise zero

f

1

= Input signal frequency

N

1

= Number of inputs changing at f

1

All currents are in milliamps and all frequencies are in megahertz.

11. Values for these conditions are examples of the ICC formula. These limits are specified but not tested.