Texas Instruments DS90LV012A, DS90LT012A Datasheet

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DS90LT012A, DS90LV012A

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SNLS141D –AUGUST 2002–REVISED APRIL 2013

DS90LV012A /DS90LT012A 3V LVDS Single CMOS Differential Line Receiver

Check for Samples: DS90LT012A, DS90LV012A

FEATURES

Compatible with ANSI TIA/EIA-644-A Standard

>400 Mbps (200 MHz) switching rates

100 ps differential skew (typical)

3.5 ns maximum propagation delay

Integrated line termination resistor (102Ω typical)

Single 3.3V power supply design (2.7V to 3.6V range)

Power down high impedance on LVDS inputs

Accepts small swing (350 mV typical) differential signal levels

LVDS receiver inputs accept LVDS/BLVDS/LVPECL inputs

Supports open, short and terminated input failsafe

Pinout simplifies PCB layout

Low Power Dissipation (10mW typical@ 3.3V static)

SOT-23 5-lead package

Leadless WSON-8 package (3x3 mm body size)

Electrically similar to the DS90LV018A

Fabricated with advanced CMOS process technology

Industrial temperature operating range (−40°C to +85°C)

Connection Diagram

DESCRIPTION

The DS90LV012A and DS90LT012A are single CMOS differential line receivers designed for applications requiring ultra low power dissipation, low noise, and high data rates. The devices are designed to support data rates in excess of 400 Mbps (200 MHz) utilizing Low Voltage Differential Swing (LVDS) technology

The DS90LV012A and DS90LT012A accept low voltage (350 mV typical) differential input signals and translates them to 3V CMOS output levels. The receivers also support open, shorted, and terminated (100Ω) input fail-safe. The receiver output will be HIGH for all fail-safe conditions. The DS90LV012A has a pinout designed for easy PCB layout. The DS90LT012A includes an input line termination resistor for point-to-point applications.

The DS90LV012A and DS90LT012A, and companion LVDS line driver provide a new alternative to high power PECL/ECL devices for high speed interface applications.

Figure 1. Top View

See Package Number DBV (R-PDSO-G5)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2002–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

 

Instruments standard warranty. Production processing does not

 

necessarily include testing of all parameters.

 

DS90LT012A, DS90LV012A

SNLS141D –AUGUST 2002–REVISED APRIL 2013

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Figure 2. Top View

See Package Number NGK0008A

Functional Diagram

Figure 3. DS90LV012A

Figure 4. DS90LT012A

Truth Table

INPUTS

OUTPUT

 

 

[IN+] − [IN−]

TTL OUT

VID ≥ 0V

H

VID ≤ −0.1V

L

Full Fail-safe OPEN/SHORT or Terminated

H

 

 

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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DS90LT012A, DS90LV012A

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SNLS141D –AUGUST 2002–REVISED APRIL 2013

Absolute Maximum Ratings (1)

 

Supply Voltage (VDD)

−0.3V to +4V

Input Voltage (IN+, IN−)

−0.3V to +3.9V

Output Voltage (TTL OUT)

−0.3V to (VDD + 0.3V)

Output Short Circuit Current

−100mA

Maximum Package Power Dissipation @ +25°C

 

 

 

NGK Package

2.26 W

 

 

Derate NGK Package

18.1 mW/°C above +25°C

 

 

Thermal resistance (θJA)

55.3°C/W

DBV Package

902mW

 

 

Derate DBV Package

7.22 mW/°C above +25°C

 

 

Thermal resistance (θJA)

138.5°C/W

Storage Temperature Range

−65°C to +150°C

Lead Temperature Range Soldering (4 sec.)

+260°C

 

 

Maximum Junction Temperature

+150°C

 

 

ESD Ratings (2)

 

(1)“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that the devices should be operated at these limits. Electrical Characteristics specifies conditions of device operation.

(2)ESD Ratings:

(a)DS90LV012A:

(a)HBM (1.5 kΩ, 100 pF) ≥ 2kV

(b)EIAJ (0Ω, 200 pF) ≥ 900V

(c)CDM ≥ 2000V

(d)IEC direct (330Ω, 150 pF) ≥ 5kV

(b)DS90LT012A:

(a)HBM (1.5 kΩ, 100 pF) ≥ 2kV

(b)EIAJ (0Ω, 200 pF) ≥ 700V

(c)CDM ≥ 2000V

(d)IEC direct (330Ω, 150 pF) ≥ 7kV

Recommended Operating Conditions

 

Min

Typ

Max

Units

 

 

 

 

 

Supply Voltage (VDD)

+2.7

+3.3

+3.6

V

Operating Free Air Temperature (TA)

−40

25

+85

°C

Electrical Characteristics

Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (1) (2)

(1)Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground unless otherwise specified (such as VID).

(2)All typicals are given for: VDD = +3.3V and TA = +25°C.

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Electrical Characteristics (continued)

Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (1) (2)

Symbol

Parameter

Conditions

Pin

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

VTH

Differential Input High Threshold

 

(3)

IN+, IN−

 

−30

0

mV

VCM dependant on VDD

 

VTL

Differential Input Low Threshold

 

 

 

−100

−30

 

mV

VCM

Common-Mode Voltage

VDD = 2.7V, VID = 100mV

 

0.05

 

2.35

V

 

 

VDD = 3.0V to 3.6V, VID = 100mV

 

0.05

 

VDD - 0.3V

V

IIN

Input Current (DS90LV012A)

VIN = +2.8V

VDD = 3.6V or 0V

 

−10

±1

+10

μA

 

 

VIN = 0V

 

 

−10

±1

+10

μA

 

 

VIN = +3.6V

VDD = 0V

 

−20

 

+20

μA

IIN

Change in Magnitude of IIN

VIN = +2.8V

VDD = 3.6V or 0V

 

 

4

 

μA

 

 

VIN = 0V

 

 

 

4

 

μA

 

 

VIN = +3.6V

VDD = 0V

 

 

4

 

μA

IIND

Differential Input Current

VIN+ = +0.4V, VIN− = +0V

 

3

3.9

4.4

mA

 

(DS90LT012A)

VIN+ = +2.4V, VIN− = +2.0V

 

 

 

 

 

 

 

RT

Integrated Termination Resistor

 

 

 

 

102

 

 

(DS90LT012A)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CIN

Input Capacitance

IN+ = IN− = GND

 

 

3

 

pF

VOH

Output High Voltage

IOH = −0.4 mA, VID = +200 mV

TTL OUT

2.4

3.1

 

V

 

 

IOH = −0.4 mA, Inputs terminated

 

2.4

3.1

 

V

 

 

IOH = −0.4 mA, Inputs shorted

 

2.4

3.1

 

V

VOL

Output Low Voltage

IOL = 2 mA, VID = −200 mV

 

 

0.3

0.5

V

IOS

Output Short Circuit Current

VOUT = 0V (4)

 

 

−15

−50

−100

mA

VCL

Input Clamp Voltage

ICL = −18 mA

 

 

−1.5

−0.7

 

V

IDD

No Load Supply Current

Inputs Open

 

VDD

 

5.4

9

mA

(3)VDD is always higher than IN+ and IN− voltage. IN+ and IN− are allowed to have voltage range −0.05V to +2.35V when VDD = 2.7V and |VID| / 2 to VDD − 0.3V when VDD = 3.0V to 3.6V. VID is not allowed to be greater than 100 mV when VCM = 0.05V to 2.35V when VDD = 2.7V or when VCM = |VID| / 2 to VDD − 0.3V when VDD = 3.0V to 3.6V.

(4)Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only. Only one output should be shorted at a time, do not exceed maximum junction temperature specification.

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Switching Characteristics

Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (1) (2)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

tPHLD

Differential Propagation Delay High to Low

CL = 15 pF

1.0

1.8

3.5

ns

tPLHD

Differential Propagation Delay Low to High

VID = 200 mV

1.0

1.7

3.5

ns

tSKD1

Differential Pulse Skew |tPHLD − tPLHD| (3)

(Figure 5 and Figure 6)

0

100

400

ps

t

Differential Part to Part Skew (4)

 

0

0.3

1.0

ns

SKD3

 

 

 

 

 

 

t

Differential Part to Part Skew (5)

 

0

0.4

1.5

ns

SKD4

 

 

 

 

 

 

tTLH

Rise Time

 

 

350

800

ps

tTHL

Fall Time

 

 

175

800

ps

f

Maximum Operating Frequency (6)

 

200

250

 

MHz

MAX

 

 

 

 

 

 

(1)CL includes probe and jig capacitance.

(2)Generator waveform for all tests unless otherwise specified: f = 1 MHz, ZO = 50Ω, tr and tf (0% to 100%) ≤ 3 ns for IN±.

(3)tSKD1 is the magnitude difference in differential propagation delay time between the positive-going-edge and the negative-going-edge of the same channel.

(4)tSKD3, part to part skew, is the differential channel-to-channel skew of any event between devices. This specification applies to devices at the same VDD and within 5°C of each other within the operating temperature range.

(5)tSKD4, part to part skew, is the differential channel-to-channel skew of any event between devices. This specification applies to devices over the recommended operating temperature and voltage ranges, and across process distribution. tSKD4 is defined as |Max − Min| differential propagation delay.

(6)fMAX generator input conditions: tr = tf < 1 ns (0% to 100%), 50% duty cycle, differential (1.05V to 1.35 peak to peak). Output criteria: 60%/40% duty cycle, VOL (max 0.4V), VOH (min 2.4V), load = 15 pF (stray plus probes). The parameter is ensured by design. The limit is based on the statistical analysis of the device over the PVT range by the transition times (tTLH and tTHL).

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Texas Instruments DS90LV012A, DS90LT012A Datasheet

DS90LT012A, DS90LV012A

SNLS141D –AUGUST 2002–REVISED APRIL 2013

www.ti.com

PARAMETER MEASUREMENT INFORMATION

Figure 5. Receiver Propagation Delay and Transition Time Test Circuit

Figure 6. Receiver Propagation Delay and Transition Time Waveforms

TYPICAL APPLICATIONS

Balanced System

Figure 7. Point-to-Point Application (DS90LV012A)

Balanced System

Figure 8. Point-to-Point Application (DS90LT012A)

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