Analog Devices AD8544ARU, AD8544AR, AD8542ARU, AD8542ARM, AD8542AR Datasheet

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Analog Devices AD8544ARU, AD8544AR, AD8542ARU, AD8542ARM, AD8542AR Datasheet

a

General-Purpose CMOS

Rail-to-Rail Amplifiers

 

 

AD8541/AD8542/AD8544

FEATURES

Single Supply Operation: 2.7 V to 5.5 V

Low Supply Current: 45 A/Amplifier

Wide Bandwidth: 1 MHz

No Phase Reversal

Low Input Currents: 4 pA

Unity Gain Stable

Rail-to-Rail Input and Output

APPLICATIONS

ASIC Input or Output Amplifier

Sensor Interface

Piezo Electric Transducer Amplifier

Medical Instrumentation

Mobile Communication

Audio Output

Portable Systems

GENERAL DESCRIPTION

The AD8541/AD8542/AD8544 are single, dual and quad rail- to-rail input and output single supply amplifiers featuring very low supply current and 1 MHz bandwidth. All are guaranteed to operate from a 2.7 V single supply as well as a 5 V supply. These parts provide 1 MHz bandwidth at low current consumption of 45 A per amplifier.

Very low input bias currents enable the AD8541/AD8542/AD8544 to be used for integrators, photodiode amplifiers, piezo electric sensors and other applications with high source impedance. Supply current is only 45 A per amplifier, ideal for battery operation.

PIN CONFIGURATIONS

5-Lead SC70 and SOT-23

(KS and RT Suffixes)

OUT A

1

AD8541 5

V+

V 2

 

 

+IN A

3

4

IN A

8-Lead SOIC

(R Suffix)

NC

1

AD8541

8

NC

–IN A

2

 

7

V+

+IN A

3

 

6

OUT A

V–

4

 

5

NC

NC = NO CONNECT

8-Lead SOIC, MSOP, and TSSOP

(R, RM, and RU Suffixes)

OUT A

1

AD8542

8

V+

–IN A

2

 

7

OUT B

+IN A

3

 

6

–IN B

V–

4

 

5

+IN B

Rail-to-rail inputs and outputs are useful to designers buffering ASICs in single supply systems. The AD8541/AD8542/AD8544 are optimized to maintain high gains at lower supply voltages, making them useful for active filters and gain stages.

The AD8541/AD8542/AD8544 are specified over the extended industrial (–40°C to +125°C) temperature range. The AD8541 is available in 8-lead SOIC, 5-lead SC70, and 5-lead SOT-23 packages. The AD8542 is available in 8-lead SOIC, 8-lead MSOP, and 8-lead TSSOP surface-mount packages. The AD8544 is available in 14-lead narrow SOIC, and 14-lead TSSOP surface mount packages. All TSSOP, MSOP, SC70, and SOT versions are available in tape and reel only.

14-Lead SOIC and TSSOP

(R and RU Suffixes)

OUT A

1

 

14

OUT D

–IN A

2

 

13

–IN D

+IN A

3

 

12

+IN D

V+

4

AD8544

11

V–

 

+IN B

5

 

10

+IN C

–IN B

6

 

9

–IN C

OUT B

7

 

8

OUT C

REV. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

World Wide Web Site: http://www.analog.com

Fax: 781/326-8703

© Analog Devices, Inc., 2000

AD8541/AD8542/AD8544–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (VS = 2.7 V, VCM = 1.35 V, TA = 25 C unless otherwise noted)

Parameter

Symbol

Conditions

 

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

INPUT CHARACTERISTICS

 

 

 

 

 

 

 

Offset Voltage

VOS

–40°C ≤ TA ≤ +125°C

 

1

6

mV

 

 

 

 

7

mV

Input Bias Current

IB

–40°C ≤ TA

≤ +85°C

 

4

60

pA

 

 

 

 

100

pA

 

 

–40°C ≤ TA

≤ +125°C

 

 

1,000

pA

Input Offset Current

IOS

–40°C ≤ TA

≤ +85°C

 

0.1

30

pA

 

 

 

 

50

pA

 

 

–40°C ≤ TA

≤ +125°C

 

 

500

pA

Input Voltage Range

 

 

 

0

 

2.7

V

Common-Mode Rejection Ratio

CMRR

VCM = 0 V to 2.7 V

40

45

 

dB

 

 

–40°C ≤ TA

≤ +125°C

38

 

 

dB

Large Signal Voltage Gain

AVO

RL = 100 kΩ , VO = 0.5 V to 2.2 V

100

500

 

V/mV

 

 

–40°C ≤ TA

≤ +85°C

50

 

 

V/mV

 

 

–40°C ≤ TA

≤ +125°C

2

 

 

V/mV

Offset Voltage Drift

∆VOS/∆T

–40°C ≤ TA

≤ +125°C

 

4

 

µV/°C

Bias Current Drift

∆IB/∆T

–40°C ≤ TA

≤ +85°C

 

100

 

fA/°C

 

 

–40°C ≤ TA

≤ +125°C

 

2,000

 

fA/°C

Offset Current Drift

∆IOS/∆T

–40°C ≤ TA

≤ +125°C

 

25

 

fA/°C

OUTPUT CHARACTERISTICS

 

 

 

 

 

 

 

Output Voltage High

VOH

IL = 1 mA

 

2.575

2.65

 

V

Output Voltage Low

VOL

–40°C ≤ TA ≤ +125°C

2.550

 

 

V

IL = 1 mA

 

 

35

100

mV

Output Current

IOUT

–40°C ≤ TA ≤ +125°C

 

 

125

mV

VOUT = VS – 1 V

 

15

 

mA

 

± ISC

 

 

 

± 20

 

mA

Closed Loop Output Impedance

ZOUT

f = 200 kHz, AV = 1

 

50

 

POWER SUPPLY

 

 

 

 

 

 

 

Power Supply Rejection Ratio

PSRR

VS = 2.5 V to 6 V

65

76

 

dB

 

 

–40°C ≤ TA ≤ +125°C

60

 

 

dB

Supply Current/Amplifier

ISY

VO = 0 V

 

 

38

55

µA

 

 

–40°C ≤ TA ≤ +125°C

 

 

75

µA

DYNAMIC PERFORMANCE

 

RL = 100 kΩ

 

 

 

V/µs

Slew Rate

SR

0.4

0.75

 

Settling Time

tS

To 0.1% (1 V Step)

 

5

 

µs

Gain Bandwidth Product

GBP

 

 

 

980

 

kHz

Phase Margin

Φo

 

 

 

63

 

Degrees

 

 

 

 

 

 

 

 

NOISE PERFORMANCE

 

 

 

 

 

 

nV/√Hz

Voltage Noise Density

en

f = 1 kHz

 

 

40

 

 

en

f = 10 kHz

 

 

38

 

nV/√Hz

Current Noise Density

in

 

 

 

<0.1

 

pA/√Hz

Specifications subject to change without notice.

–2–

REV. B

AD8541/AD8542/AD8544

ELECTRICAL CHARACTERISTICS (VS = 3.0 V, VCM = 1.5 V, TA = 25 C unless otherwise noted)

Parameter

Symbol

Conditions

 

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

INPUT CHARACTERISTICS

 

 

 

 

 

 

 

Offset Voltage

VOS

–40°C ≤ TA ≤ +125°C

 

1

6

mV

Input Bias Current

IB

 

 

7

mV

–40°C ≤ TA

≤ +85°C

 

4

60

pA

 

 

 

 

100

pA

Input Offset Current

IOS

–40°C ≤ TA

≤ +125°C

 

 

1,000

pA

–40°C ≤ TA

≤ +85°C

 

0.1

30

pA

 

 

 

 

50

pA

 

 

–40°C ≤ TA

≤ +125°C

 

 

500

pA

Input Voltage Range

 

 

 

0

 

3

V

Common-Mode Rejection Ratio

CMRR

VCM = 0 V to 3 V

40

45

 

dB

 

 

–40°C ≤ TA

≤ +125°C

38

 

 

dB

Large Signal Voltage Gain

AVO

RL = 100 kΩ , VO = 0.5 V to 2.2 V

100

500

 

V/mV

 

 

–40°C ≤ TA

≤ +85°C

50

 

 

V/mV

 

∆VOS/∆T

–40°C ≤ TA

≤ +125°C

2

 

 

V/mV

Offset Voltage Drift

–40°C ≤ TA

≤ +125°C

 

4

 

µV/°C

Bias Current Drift

∆IB/∆T

–40°C ≤ TA

≤ +85°C

 

100

 

fA/°C

 

 

–40°C ≤ TA

≤ +125°C

 

2,000

 

fA/°C

Offset Current Drift

∆IOS/∆T

–40°C ≤ TA

≤ +125°C

 

25

 

fA/°C

OUTPUT CHARACTERISTICS

 

 

 

 

 

 

 

Output Voltage High

VOH

IL = 1 mA

 

2.875

2.955

 

V

 

 

–40°C ≤ TA ≤ +125°C

2.850

 

 

V

Output Voltage Low

VOL

IL = 1 mA

 

 

32

100

mV

Output Current

IOUT

–40°C ≤ TA ≤ +125°C

 

 

125

mV

VOUT = VS – 1 V

 

18

 

mA

 

± ISC

 

 

 

± 25

 

mA

Closed Loop Output Impedance

ZOUT

f = 200 kHz, AV = 1

 

50

 

POWER SUPPLY

 

 

 

 

 

 

 

Power Supply Rejection Ratio

PSRR

VS = 2.5 V to 6 V

65

76

 

dB

 

 

–40°C ≤ TA ≤ +125°C

60

 

 

dB

Supply Current/Amplifier

ISY

VO = 0 V

 

 

40

60

µA

 

 

–40°C ≤ TA ≤ +125°C

 

 

75

µA

DYNAMIC PERFORMANCE

 

RL = 100 kΩ

 

 

 

V/µs

Slew Rate

SR

0.4

0.8

 

Settling Time

tS

To 0.01% (1 V Step)

 

5

 

µs

Gain Bandwidth Product

GBP

 

 

 

980

 

kHz

Phase Margin

Φo

 

 

 

64

 

Degrees

 

 

 

 

 

 

 

 

NOISE PERFORMANCE

 

 

 

 

 

 

nV/√Hz

Voltage Noise Density

en

f = 1 kHz

 

 

42

 

 

en

f = 10 kHz

 

 

38

 

nV/√Hz

Current Noise Density

in

 

 

 

<0.1

 

pA/√Hz

Specifications subject to change without notice.

REV. B

–3–

AD8541/AD8542/AD8544–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (VS = 5.0 V, VCM = 2.5 V, TA = 25 C unless otherwise noted)

Parameter

Symbol

Conditions

 

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

INPUT CHARACTERISTICS

 

 

 

 

 

 

 

Offset Voltage

VOS

–40°C ≤ TA ≤ +125°C

 

1

6

mV

Input Bias Current

IB

 

 

7

mV

–40°C ≤ TA

≤ +85°C

 

4

60

pA

 

 

 

 

100

pA

Input Offset Current

IOS

–40°C ≤ TA

≤ +125°C

 

 

1,000

pA

–40°C ≤ TA

≤ +85°C

 

0.1

30

pA

 

 

 

 

50

pA

 

 

–40°C ≤ TA

≤ +125°C

 

 

500

pA

Input Voltage Range

 

 

 

0

 

5

V

Common-Mode Rejection Ratio

CMRR

VCM = 0 V to 5 V

40

48

 

dB

 

 

–40°C ≤ TA

≤ +125°C

38

 

 

dB

Large Signal Voltage Gain

AVO

RL = 100 kΩ , VO = 0.5 V to 2.2 V

20

40

 

V/mV

 

 

–40°C ≤ TA

≤ +85°C

10

 

 

V/mV

 

∆VOS/∆T

–40°C ≤ TA

≤ +125°C

2

 

 

V/mV

Offset Voltage Drift

–40°C ≤ TA

≤ +125°C

 

4

 

µV/°C

Bias Current Drift

∆IB/∆T

–40°C ≤ TA

≤ +85°C

 

100

 

fA/°C

 

 

–40°C ≤ TA

≤ +125°C

 

2,000

 

fA/°C

Offset Current Drift

∆IOS/∆T

–40°C ≤ TA

≤ +125°C

 

25

 

fA/°C

OUTPUT CHARACTERISTICS

 

 

 

 

 

 

 

Output Voltage High

VOH

IL = 1 mA

 

4.9

4.965

 

V

Output Voltage Low

VOL

–40°C ≤ TA ≤ +125°C

4.875

 

 

V

IL = 1 mA

 

 

25

100

mV

 

 

–40°C ≤ TA ≤ +125°C

 

 

125

mV

Output Current

IOUT

VOUT = VS – 1 V

 

30

 

mA

 

± ISC

 

 

 

± 60

 

mA

Closed Loop Output Impedance

ZOUT

f = 200 kHz, AV = 1

 

45

 

POWER SUPPLY

 

 

 

 

 

 

 

Power Supply Rejection Ratio

PSRR

VS = 2.5 V to 6 V

65

76

 

dB

 

 

–40°C ≤ TA ≤ +125°C

60

 

 

dB

Supply Current/Amplifier

ISY

VO = 0 V

 

 

45

65

µA

 

 

–40°C ≤ TA ≤ +125°C

 

 

85

µA

DYNAMIC PERFORMANCE

 

RL = 100 kΩ, CL = 200 pF

 

 

 

V/µs

Slew Rate

SR

0.45

0.92

 

Full-Power Bandwidth

BWP

1% Distortion

 

70

 

kHz

Settling Time

tS

To 0.1% (1 V Step)

 

6

 

µs

Gain Bandwidth Product

GBP

 

 

 

1,000

 

kHz

Phase Margin

Φo

 

 

 

67

 

Degrees

NOISE PERFORMANCE

 

 

 

 

 

 

nV/√Hz

Voltage Noise Density

en

f = 1 kHz

 

 

42

 

 

en

f = 10 kHz

 

 

38

 

nV/√Hz

Current Noise Density

in

 

 

 

<0.1

 

pA/√Hz

Specifications subject to change without notice.

–4–

REV. B

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