Analog Devices ADR425BR-REEL7, ADR425BR-REEL, ADR425BR, ADR425ARM-REEL7, ADR425AR-REEL7 Datasheet

a		Ultraprecision Low Noise, 2.048 V/2.500 V/
		3.00 V/5.00 V XFET® Voltage References
		ADR420/ADR421/ADR423/ADR425

FEATURES

Low Noise (0.1 Hz to 10 Hz)

ADR420: 1.75 V p-p

ADR421: 1.75 V p-p

ADR423: 2.0 V p-p

ADR425: 3.4 V p-p

Low Temperature Coefficient: 3 ppm/ C

Long-Term Stability: 50 ppm/1000 Hours

Load Regulation: 70 ppm/mA

Line Regulation: 35 ppm/V

Low Hysteresis: 40 ppm Typical

Wide Operating Range

ADR420: 4 V to 18 V

ADR421: 4.5 V to 18 V

ADR423: 5 V to 18 V

ADR425: 7 V to 18 V

Quiescent Current: 0.5 mA Maximum

High Output Current: 10 mA

Wide Temperature Range: –40 C to +125 C

APPLICATIONS

Precision Data Acquisition Systems

High-Resolution Converters

Battery-Powered Instrumentation

Portable Medical Instruments

Industrial Process Control Systems

Precision Instruments

Optical Network Control Circuits

GENERAL DESCRIPTION

The ADR42x series are ultraprecision second-generation XFET voltage references featuring low noise, high accuracy, and excellent long-term stability in a SOIC and Mini_SOIC footprints. Patented temperature drift curvature correction technique and XFET (eXtra implanted junction FET) technology minimize nonlinearity of the voltage change with temperature. The XFET architecture offers superior accuracy and thermal hysteresis to the bandgap references. It also operates at lower power and lower supply headroom than the Buried Zener references.

The superb noise, stable, and accurate characteristics of ADR42x make them ideal for precision conversion applications such as optical network and medical equipment. The ADR42x trim terminal can also be used to adjust the output voltage over a

±0.5% range without compromising any other performance. The ADR42x series voltage references offer two electrical grades and

are specified over the extended industrial temperature range of –40°C to +125°C. Devices are available in 8-lead SOIC-8 or

30% smaller 8-lead Mini_SOIC-8 packages.

PIN CONFIGURATION

Surface-Mount Packages

8-Lead SOIC

8-Lead Mini_SOIC

TP 1

8 TP

VIN	2	ADR42x	7	NIC
NIC	3	TOP VIEW	6	VOUT
				TRIM
GND	4	(Not to Scale)	5

NIC = NO INTERNAL CONNECTION

TP = TEST PIN (DO NOT CONNECT)

Table I. ADR42x Products

	Output		Initial
ADR420	Voltage		Accuracy	Tempco
Products	VO	mV	%	ppm/°C
ADR420	2.048	1, 3	0.05, 0.15	3, 10
ADR421	2.50	1, 3	0.04, 0.12	3, 10
ADR423	3.00	1.5, 4	0.04, 0.12	3, 10
ADR425	5.00	2, 6	0.04, 0.12	3, 10

XFET is a registered trademark of Analog Devices, Inc.

REV. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2002

ADR42x–SPECIFICATIONS

ADR420 ELECTRICAL SPECIFICATIONS (@ VIN = 5.0 V to 15.0 V, TA = 25 C, unless otherwise noted.)

Parameter			Symbol	Conditions	Min	Typ	Max	Unit
Output Voltage		A Grade	VO		2.045	2.048	2.051	V
Initial Accuracy			VOERR		–3		+3	mV
					–0.15		+0.15	%
Output Voltage		B Grade	VO		2.047	2.048	2.049	V
Initial Accuracy			VOERR		–1		+1	mV
					–0.05		+0.05	%
Temperature Coefficient A Grade			TCVO	–40°C < TA < +125°C		2	10	ppm/°C
		B Grade				1	3	ppm/°C
Supply Voltage Headroom			VIN – VO		2			V
Line Regulation			∆VO/∆VIN	VIN = 5 V to 18 V		10	35	ppm/V
Load Regulation			∆VO/∆ILOAD	–40°C < TA < +125°C
				ILOAD = 0 mA to 10 mA			70	ppm/mA
Quiescent Current			IIN	–40°C < TA < +125°C				A
				No Load		390	500
				–40°C < TA < +125°C			600	A
Voltage Noise			eN p-p	0.1 Hz to 10 Hz		1.75		V p-p
Voltage Noise Density			eN	1 kHz		60		nV/√Hz
Turn-On Settling Time			tR			10		s
Long-Term Stability			∆VO	1,000 Hours		50		ppm
Output Voltage Hysteresis			VO_HYS			40		ppm
Ripple Rejection Ratio			RRR	fIN = 10 kHz		75		dB
Short Circuit to GND			ISC			27		mA
Specifications subject to change without notice.
	ADR421 ELECTRICAL SPECIFICATIONS (@ VIN = 5.0 V to 15.0 V, TA = 25 C, unless otherwise noted.)
	Parameter		Symbol	Conditions	Min	Typ	Max	Unit
	Output Voltage	A Grade	VO		2.497	2.500	2.503	V
	Initial Accuracy		VOERR		–3		+3	mV
					–0.12		+0.12	%
	Output Voltage	B Grade	VO		2.499	2.500	2.501	V
	Initial Accuracy		VOERR		–1		+1	mV
					–0.04		+0.04	%
	Temperature Coefficient A Grade		TCVO	–40°C < TA < +125°C		2	10	ppm/°C
		B Grade				1	3	ppm/°C
	Supply Voltage Headroom		VIN – VO		2			V
	Line Regulation		∆VO/∆VIN	VIN = 5 V to 18 V		10	35	ppm/V
	Load Regulation		∆VO/∆ILOAD	–40°C < TA < +125°C
				ILOAD = 0 mA to 10 mA			70	ppm/mA
				–40°C < TA < +125°C				A
	Quiescent Current		IIN	No Load		390	500
				–40°C < TA < +125°C			600	A
	Voltage Noise		eN p-p	0.1 Hz to 10 Hz		1.75		V p-p
	Voltage Noise Density		eN	1 kHz		80		nV/√Hz
	Turn-On Settling Time		tR			10		s
	Long-Term Stability		∆VO	1,000 Hours		50		ppm
	Output Voltage Hysteresis		VO_HYS			40		ppm
	Ripple Rejection Ratio		RRR	fIN = 10 kHz		75		dB
	Short Circuit to GND		ISC			27		mA

Specifications subject to change without notice.

–2–

REV. B

ADR420/ADR421/ADR423/ADR425

ADR423 ELECTRICAL SPECIFICATIONS (@ VIN = 5.0 V to 15.0 V, TA = 25 C, unless otherwise noted.)

Parameter			Symbol		Conditions	Min	Typ	Max		Unit
Output Voltage	A Grade		VO			2.996	3.000	3.004		V
Initial Accuracy			VOERR			–4		+4		mV
						–0.13		+0.13		%
Output Voltage	B Grade		VO			2.9985	3.000	3.0015		V
Initial Accuracy			VOERR			–1.5		+1.5		mV
						–0.04		+0.04		%
Temperature Coefficient A Grade			TCVO		–40°C < TA < +125°C		2	10		ppm/°C
	B Grade		VIN − VO				1	3		ppm/°C
Supply Voltage Headroom						2				V
Line Regulation			∆VO/∆VIN		VIN = 5 V to 18 V		10	35		ppm/V
Load Regulation			∆VO/∆ILOAD		–40°C < TA < +125°C
					ILOAD = 0 mA to 10 mA			70		ppm/mA
					–40°C < TA < +125°C					µA
Quiescent Current			IIN		No Load		390	500
					–40°C < TA < +125°C			600		µA
Voltage Noise			eN p-p		0.1 Hz to 10 Hz		2			µV p-p
Voltage Noise Density			eN		1 kHz		90			nV/√Hz
Turn-On Settling Time			tR				10			µs
Long-Term Stability			∆VO		1,000 Hours		50			ppm
Output Voltage Hysteresis			VO_HYS				40			ppm
Ripple Rejection Ratio			RRR		fIN = 10 kHz		75			dB
Short Circuit to GND			ISC				27			mA
Specifications subject to change without notice.
ADR425 ELECTRICAL SPECIFICATIONS (@ VIN = 7.0 V to 15.0 V, TA = 25 C, unless otherwise noted.)
Parameter			Symbol		Conditions	Min	Typ	Max		Unit
Output Voltage	A Grade		VO			4.994	5.000	5.006		V
Initial Accuracy			VOERR			–6		+6		mV
						–0.12		+0.12		%
Output Voltage	B Grade		VO			4.998	5.000	5.002		V
Initial Accuracy			VOERR			–2		+2		mV
						–0.04		+0.04		%
Temperature Coefficient A Grade			TCVO		–40°C < TA < +125°C		2	10		ppm/°C
	B Grade						1	3		ppm/°C
Supply Voltage Headroom			VIN – VO			2				V
Line Regulation			∆VO/∆VIN		VIN = 7 V to 18 V		10	35		ppm/V
			∆VO/∆ILOAD		–40°C < TA < +125°C
Load Regulation					ILOAD = 0 mA to 10 mA			70		ppm/mA
Quiescent Current			IIN		–40°C < TA < +125°C					µA
					No Load		390	500
					–40°C < TA < +125°C			600		µA
Voltage Noise			eN p-p		0.1 Hz to 10 Hz		3.4			µV p-p
Voltage Noise Density			eN		1 kHz		110			nV/√Hz
Turn-On Settling Time			tR				10			µs
Long-Term Stability			∆VO		1,000 Hours		50			ppm
Output Voltage Hysteresis			VO_HYS				40			ppm
Ripple Rejection Ratio			RRR		fIN = 10 kHz		75			dB
Short Circuit to GND			ISC				27			mA

Specifications subject to change without notice.

REV. B

–3–

ADR420/ADR421/ADR423/ADR425

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Output Short-Circuit Duration to GND . . . . . . . . . Indefinite Storage Temperature Range

R, RM Packages . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Operating Temperature Range

ADR42x . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C Junction Temperature Range

R, RM Packages . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . 300°C

*Absolute maximum ratings apply at 25°C, unless otherwise noted.

			PIN CONFIGURATIONS
			SOIC-8					Mini_SOIC-8
					TP	TP					TP
TP	1			8			1			8
			ADR42x		NIC	V	2		ADR42x		NIC
V	2			7						7
IN						IN
NIC	3			6	VOUT	NIC	3			6	VOUT
GND 4					TRIM	GND	4				TRIM
				5						5
NIC = NO INTERNAL CONNECTION						NIC = NO INTERNAL CONNECTION
TP = TEST PIN (DO NOT CONNECT)						TP = TEST PIN (DO NOT CONNECT)

PIN FUNCTION DESCRIPTIONS

Pin	Mnemonic	Description
1, 8	TP	Test Pin. There are actual connections in TP
		pins but they are reserved for factory testing
		purposes. Users should not connect any-
		thing to TP pins, otherwise the device may
		not function properly.
2	VIN	Input Voltage
3, 7	NIC	No Internal Connect. NICs have no internal
		connections.
4	GND	Ground Pin = 0 V
5	TRIM	Trim Terminal. It can be used to adjust the
		output voltage over a ± 0.5% range without
		affecting the temperature coefficient.
6	VOUT	Output Voltage
Package Type				θJA*	Unit
8-Lead Mini_SOIC (RM)				190	°C/W
8-Lead SOIC (R)				130	°C/W

*θJA is specified for the worst-case conditions, i.e., θJA is specified for device soldered in circuit board for surface-mount packages.

ORDERING GUIDE

	Output	Initial		Temperature				Number of	Temperature
	Voltage	Accuracy		Coefficient	Package	Package	Top	Parts per	Range
Model	VO	mV	%	ppm/°C	Description	Option	Mark	Reel	°C
ADR420AR	2.048	3	0.15	10	SOIC	SO-8	ADR420	98	–40 to +125
ADR420AR-Reel7	2.048	3	0.15	10	SOIC	SO-8	ADR420	3,000	–40 to +125
ADR420BR	2.048	1	0.05	3	SOIC	SO-8	ADR420	98	–40 to +125
ADR420BR-Reel7	2.048	1	0.05	3	SOIC	SO-8	ADR420	3,000	–40 to +125
ADR420ARM-Reel7	2.048	3	0.15	10	Mini_SOIC	RM-8	R4A	1,000	–40 to +125
ADR421AR	2.50	3	0.12	10	SOIC	SO-8	ADR421	98	–40 to +125
ADR421AR-Reel7	2.50	3	0.12	10	SOIC	SO-8	ADR421	3,000	–40 to +125
ADR421BR	2.50	1	0.04	3	SOIC	SO-8	ADR421	98	–40 to +125
ADR421BR-Reel7	2.50	1	0.04	3	SOIC	SO-8	ADR421	3,000	–40 to +125
ADR421ARM-Reel7	2.50	3	0.12	10	Mini_SOIC	RM-8	R5A	1,000	–40 to +125
ADR423AR	3.00	4	0.13	10	SOIC	SO-8	ADR423	98	–40 to +125
ADR423AR-Reel7	3.00	4	0.13	10	SOIC	SO-8	ADR423	3,000	–40 to +125
ADR423BR	3.00	1.5	0.04	3	SOIC	SO-8	ADR423	98	–40 to +125
ADR423BR-Reel7	3.00	1.5	0.04	3	SOIC	SO-8	ADR423	3,000	–40 to +125
ADR423ARM-Reel7	3.00	4	0.13	10	Mini_SOIC	RM-8		1,000	–40 to +125
ADR425AR	5.00	6	0.12	10	SOIC	SO-8	ADR425	98	–40 to +125
ADR425AR-Reel7	5.00	6	0.12	10	SOIC	SO-8	ADR425	3,000	–40 to +125
ADR425BR	5.00	2	0.04	3	SOIC	SO-8	ADR425	98	–40 to +125
ADR425BR-Reel7	5.00	2	0.04	3	SOIC	SO-8	ADR425	3,000	–40 to +125
ADR425ARM-Reel7	5.00	6	0.12	10	Mini_SOIC	RM-8	R7A	1,000	–40 to +125

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD42x features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–4–

REV. B

ADR420/ADR421/ADR423/ADR425

PARAMETER DEFINITIONS Temperature Coefficient

The change of output voltage over the operating temperature range and normalized by the output voltage at 25°C, expressed in ppm/°C. The equation follows:

TCVO (ppm/°C ) =	VO (T2 ) –VO (T1 )			× 106
V (25°C ) × (T – T )
	O	2	1

where

VO (25°C) = VO at 25°C

VO (T1) = VO at Temperature 1

VO (T2) = VO at Temperature 2.

Line Regulation

The change in output voltage due to a specified change in input voltage. It includes the effects of self-heating. Line regulation is expressed in either percent per volt, parts-per-million per volt, or microvolts per volt change in input voltage

Load Regulation

The change in output voltage due to a specified change in load current. It includes the effects of self-heating. Load regulation is expressed in either microvolts per milliampere, parts-per-million per milliampere, or ohms of dc output resistance.

Long-Term Stability

Typical shift of output voltage at 25°C on a sample of parts subjected to operation life test of 1000 hours at 125°C:

∆VO = VO (t0 ) – VO (t1 )

∆VO ( ppm) = VO (t0 ) – VO (t1 ) × 106

VO (t0 )

where

VO (t0) = VO at 25°C at Time 0

VO (t1) = VO at 25°C after 1,000 hours operation at 125°C.

Thermal Hysteresis

Thermal hysteresis is defined as the change of output voltage after the device is cycled through temperature from +25°C to

–40°C to +125°C and back to +25°C. This is a typical value from a sample of parts put through such a cycle.

	VO _ HYS =VO (25°C ) –VO _TC
V		( ppm) =	VO (25°C ) –VO _TC	× 106
O _ HYS			VO (25°C )

where

VO (25°C) = VO at 25°C

VO_TC = VO at 25°C after temperature cycle at +25°C to –40°C to +125°C and back to +25°C.

Input Capacitor

Input capacitors are not required on the ADR42x. There is no limit for the value of the capacitor used on the input, but a 1 µF to 10 µF capacitor on the input will improve transient response in applications where the supply suddenly changes. An additional 0.1 µF in parallel will also help to reduce noise from the supply.

Output Capacitor

The ADR42x does not need output capacitors for stability under any load condition. An output capacitor, typically 0.1 µF, will filter out any low-level noise voltage and will not affect the operation of the part. On the other hand, the load transient response can be improved with an additional 1 µF to 10 µF output capacitor in parallel. A capacitor here will act as a source of stored energy for sudden increase in load current. The only parameter that will degrade, by adding an output capacitor, is turn-on time and it depends on the size of the capacitor chosen.

REV. B

–5–