Analog Devices AMP04GBC, AMP04FS-REEL7, AMP04FS-REEL, AMP04FS, AMP04FP Datasheet

a		Precision Single Supply
		Instrumentation Amplifier
		AMP04*

FEATURES

Single Supply Operation

Low Supply Current: 700 A Max

Wide Gain Range: 1 to 1000 Low Offset Voltage: 150 V Max

Zero-In/Zero-Out Single-Resistor Gain Set

8-Lead Mini-DIP and SO Packages

APPLICATIONS

Strain Gages

Thermocouples

RTDs

Battery-Powered Equipment

Medical Instrumentation

Data Acquisition Systems

PC-Based Instruments

Portable Instrumentation

GENERAL DESCRIPTION

The AMP04 is a single-supply instrumentation amplifier designed to work over a +5 volt to ± 15 volt supply range. It offers an excellent combination of accuracy, low power consumption, wide input voltage range, and excellent gain performance.

Gain is set by a single external resistor and can be from 1 to 1000. Input common-mode voltage range allows the AMP04 to handle signals with full accuracy from ground to within 1 volt of the positive supply. And the output can swing to within 1 volt of the positive supply. Gain bandwidth is over 700 kHz. In addition to being easy to use, the AMP04 draws only 700 A of supply current.

For high resolution data acquisition systems, laser trimming of low drift thin-film resistors limits the input offset voltage to under 150 V, and allows the AMP04 to offer gain nonlinearity of 0.005% and a gain tempco of 30 ppm/°C.

A proprietary input structure limits input offset currents to less than 5 nA with drift of only 8 pA/°C, allowing direct connection of the AMP04 to high impedance transducers and other signal sources.

FUNCTIONAL BLOCK DIAGRAM

RGAIN

IN(–)

INPUT BUFFERS

IN(+)

11k

11k

100k

REF

100k

VOUT

The AMP04 is specified over the extended industrial (–40°C to +85°C) temperature range. AMP04s are available in plastic and ceramic DIP plus SO-8 surface mount packages.

Contact your local sales office for MIL-STD-883 data sheet and availability.

			PIN CONNECTIONS
8-Lead Epoxy DIP						8-Lead Narrow-Body SO
			(P Suffix)						(S Suffix)
RGAIN					RGAIN
		1	AMP04	8		RGAIN					RGAIN
–IN		2		7	V+	–IN			AMP04		V+
					VOUT
+IN		3		6		+IN					VOUT
					REF
V–		4		5		V–					REF

*Protected by U.S. Patent No. 5,075,633.

REV. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	World Wide Web Site: http://www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2000

AMP04–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (VS = 5 V, VCM = 2.5 V, TA = 25 C unless otherwise noted)

				AMP04E			AMP04F
Parameter	Symbol	Conditions	Min	Typ	Max	Min	Typ Max	Unit
OFFSET VOLTAGE								µV
Input Offset Voltage	VIOS	–40°C ≤ TA ≤ +85°C		30	150		300
					300		600	µV
Input Offset Voltage Drift	TCVIOS				3		6	µV/°C
Output Offset Voltage	VOOS	–40°C ≤ TA ≤ +85°C		0.5	1.5		3	mV
					3		6	mV
Output Offset Voltage Drift	TCVOOS				30		50	µV/°C
INPUT CURRENT				22	30		40	nA
Input Bias Current	IB	–40°C ≤ TA ≤ +85°C
					50		60	nA
Input Bias Current Drift	TCIB			65			65	pA/°C
Input Offset Current	IOS	–40°C ≤ TA ≤ +85°C		1	5		10	nA
					10		15	nA
Input Offset Current Drift	TCIOS			8			8	pA/°C
INPUT								GΩ
Common-Mode Input Resistance				4			4
Differential Input Resistance				4			4	GΩ
Input Voltage Range	VIN	0 V ≤ VCM ≤ 3.0 V	0		3.0	0	3.0	V
Common-Mode Rejection	CMR
		G = 1	60	80		55		dB
		G = 10	80	100		75		dB
		G = 100	90	105		80		dB
		G = 1000	90	105		80		dB
Common-Mode Rejection	CMR	0 V ≤ VCM ≤ 2.5 V
		–40°C ≤ TA ≤ +85°C
		G = 1	55			50		dB
		G = 10	75			70		dB
		G = 100	85			75		dB
		G = 1000	85			75		dB
Power Supply Rejection	PSRR	4.0 V ≤ VS ≤ 12 V
		–40°C ≤ TA ≤ +85°C
		G = 1	95			85		dB
		G = 10	105			95		dB
		G = 100	105			95		dB
		G = 1000	105			95		dB
GAIN (G = 100 K/RGAIN)
Gain Equation Accuracy		G = 1 to 100		0.2	0.5		0.75	%
		G = 1 to 100
		–40°C ≤ TA ≤ +85°C			0.8		1.0	%
		G = 1000		0.4			0.75	%
Gain Range	G	G = 1, RL = 5 kΩ	1		1000	1	1000	V/V
Nonlinearity				0.005				%
		G = 10, RL = 5 kΩ		0.015				%
	∆G/∆T	G = 100, RL = 5 kΩ		0.025				%
Gain Temperature Coefficient				30			50	ppm/°C
OUTPUT		RL = 2 kΩ	4.0	4.2		4.0		V
Output Voltage Swing High	VOH
		RL = 2 kΩ
		–40°C ≤ TA ≤ +85°C	3.8			3.8		V
Output Voltage Swing Low	VOL	RL = 2 kΩ
		–40°C ≤ TA ≤ +85°C			2.0		2.5	mV
Output Current Limit		Sink		30			30	mA
		Source		15			15	mA

–2–

REV. B

AMP04

			AMP04E		AMP04F
Parameter	Symbol	Conditions	Min Typ	Max	Min Typ	Max	Unit
NOISE							nV/√Hz
Noise Voltage Density, RTI	eN	f = 1 kHz, G = 1	270		270
		f = 1 kHz, G = 10	45		45		nV/√Hz
		f = 100 Hz, G = 100	30		30		nV/√Hz
		f = 100 Hz, G = 1000	25		25		nV/√Hz
Noise Current Density, RTI	iN	f = 100 Hz, G = 100	4		4		pA/√Hz
Input Noise Voltage	eN p-p	0.1 Hz to 10 Hz, G = 1	7		7		µV p-p
		0.1 Hz to 10 Hz, G = 10	1.5		1.5		µV p-p
		0.1 Hz to 10 Hz, G = 100	0.7		0.7		µV p-p
DYNAMIC RESPONSE
Small Signal Bandwidth	BW	G = 1, –3 dB	300		300		kHz
POWER SUPPLY							µA
Supply Current	ISY		550	700		700
		–40°C ≤ TA ≤ +85°C		850		850	µA

Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS (VS = 15 V, VCM = 0 V, TA = 25 C unless otherwise noted)

					AMP04E			AMP04F
Parameter	Symbol	Conditions		Min	Typ	Max	Min	Typ Max	Unit
OFFSET VOLTAGE					80	400		600	µV
Input Offset Voltage	VIOS	–40°C ≤ TA
			≤ +85°C			600		900	µV
Input Offset Voltage Drift	TCVIOS					3		6	µV/°C
Output Offset Voltage	VOOS	–40°C ≤ TA	≤ +85°C		1	3		6	mV
						6		9	mV
Output Offset Voltage Drift	TCVOOS					30		50	µV/°C
INPUT CURRENT
Input Bias Current	IB	–40°C ≤ TA	≤ +85°C		17	30		40	nA
						50		60	nA
Input Bias Current Drift	TCIB				65			65	pA/°C
Input Offset Current	IOS	–40°C ≤ TA	≤ +85°C		2	5		10	nA
						15		20	nA
Input Offset Current Drift	TCIOS				28			28	pA/°C
INPUT									GΩ
Common-Mode Input Resistance					4			4
Differential Input Resistance					4			4	GΩ
Input Voltage Range	VIN	–12 V ≤ VCM ≤ +12 V		–12		+12	–12	+12	V
Common-Mode Rejection	CMR
		G = 1		60	80		55		dB
		G = 10		80	100		75		dB
		G = 100		90	105		80		dB
		G = 1000		90	105		80		dB
Common-Mode Rejection	CMR	–11 V ≤ VCM ≤ +11 V
		–40°C ≤ TA	≤ +85°C
		G = 1		55			50		dB
		G = 10		75			70		dB
		G = 100		85			75		dB
		G = 1000		85			75		dB
Power Supply Rejection	PSRR	± 2.5 V ≤ VS ≤ ± 18 V
		–40°C ≤ TA	≤ +85°C
		G = 1		75			70		dB
		G = 10		90			80		dB
		G = 100		95			85		dB
		G = 1000		95			85		dB

REV. B

–3–

AMP04

AMP04E

AMP04F

Parameter

Symbol

Conditions

Min

Typ

Max

Min Typ

Max

Unit

GAIN (G = 100 K/RGAIN)

Gain Equation Accuracy

G = 1 to 100

0.2

0.5

0.75

%

G = 1000

0.4

0.75

%

G = 1 to 100

–40°C ≤ TA ≤ +85°C

0.8

1.0

%

Gain Range

G

G = 1, RL = 5 kΩ

1

1000

1

1000

V/V

Nonlinearity

0.005

0.005

%

G = 10, RL = 5 kΩ

0.015

0.015

%

∆G/∆T

G = 100, RL = 5 kΩ

0.025

0.025

%

Gain Temperature Coefficient

30

50

ppm/°C

OUTPUT

RL = 2 kΩ

Output Voltage Swing High

VOH

13

13.4

13

V

RL = 2 kΩ

–40°C ≤ TA ≤ +85°C

12.5

12.5

V

Output Voltage Swing Low

VOL

RL = 2 kΩ

–40°C ≤ TA ≤ +85°C

–14.5

–14.5

V

Output Current Limit

Sink

30

30

mA

Source

15

15

mA

NOISE

nV/√Hz

Noise Voltage Density, RTI

eN

f = 1 kHz, G = 1

270

270

f = 1 kHz, G = 10

45

45

nV/√Hz

f = 100 Hz, G = 100

30

30

nV/√Hz

f = 100 Hz, G = 1000

25

25

nV/√Hz

Noise Current Density, RTI

iN

f = 100 Hz, G = 100

4

4

pA/√Hz

Input Noise Voltage

eN p-p

0.1 Hz to 10 Hz, G = 1

5

5

µV p-p

0.1 Hz to 10 Hz, G = 10

1

1

µV p-p

0.1 Hz to 10 Hz, G = 100

0.5

0.5

µV p-p

DYNAMIC RESPONSE

Small Signal Bandwidth

BW

G = 1, –3 dB

700

700

kHz

POWER SUPPLY

µA

Supply Current

ISY

750

900

900

–40°C ≤ TA ≤ +85°C

1100

1100

µA

Specifications subject to change without notice.

WAFER TEST LIMITS (VS = 5 V, VCM = 2.5 V, TA = 25 C unless otherwise noted)

Parameter

Symbol

Conditions

Limit

Unit

OFFSET VOLTAGE

µV max

Input Offset Voltage

VIOS

300

Output Offset Voltage

VOOS

3

mV max

INPUT CURRENT

Input Bias Current

IB

40

nA max

Input Offset Current

IOS

10

nA max

INPUT

0 V ≤ VCM ≤ 3.0 V

Common-Mode Rejection

CMR

G = 1

55

dB min

G = 10

75

dB min

G = 100

80

dB min

G = 1000

80

dB min

Common-Mode Rejection

CMR

VS = ± 15 V, –12 V ≤ VCM ≤ +12 V

G = 1

55

dB min

G = 10

75

dB min

G = 100

80

dB min

–4–

REV. B

				AMP04
Parameter	Symbol	Conditions	Limit		Unit
		G = 1000	80		dB min
Power Supply Rejection	PSRR	4.0 V ≤ VS ≤ 12 V
		G = 1	85		dB min
		G = 10	95		dB min
		G = 100	95		dB min
		G = 1000	95		dB min
GAIN (G = 100 K/RGAIN)
Gain Equation Accuracy		G = 1 to 100	0.75		% max
OUTPUT		RL = 2 kΩ
Output Voltage Swing High	VOH		4.0		V min
Output Voltage Swing Low	VOL	RL = 2 kΩ	2.5		mV max
POWER SUPPLY		VS = ±15			µA max
Supply Current	ISY		900
			700		µA max

NOTE

Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .± 18 V Common-Mode Input Voltage2 . . . . . . . . . . . . . . . . . . . ± 18 V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 36 V Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite Storage Temperature Range

Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range

AMP04A . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C AMP04E, F . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Junction Temperature Range

Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C

Package Type	JA3	JC	Unit
8-Lead Cerdip (Z)	148	16	°C/W
8-Lead Plastic DIP (P)	103	43	°C/W
8-Lead SOIC (S)	158	43	°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2For supply voltages less than ± 18 V, the absolute maximum input voltage is equal to the supply voltage.

3θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for cerdip, P-DIP, and LCC packages; θJA is specified for device soldered in circuit board for SOIC package.

DICE CHARACTERISTICS

RGAIN	RGAIN
1	8

7 V+

–IN 2

6 VOUT

+IN 3

V– 4

5 REF

AMP04 Die Size 0.075 × 0.99 inch, 7,425 sq. mils. Substrate (Die Backside) Is Connected to V+. Transistor Count, 81.

ORDERING GUIDE

	Temperature	VOS @ 5 V	Package	Package
Model	Range	TA = 25 C	Description	Option
AMP04EP	XIND	150 µV	Plastic DIP	N-8
AMP04ES	XIND	150 µV	SOIC	SO-8
AMP04ES-REEL7	XIND	150 µV	SOIC	SO-8
AMP04FP	XIND	300 µV	Plastic DIP	N-8
AMP04FS	XIND	300 µV	SOIC	SO-8
AMP04FS-REEL	XIND	150 µV	SOIC	SO-8
AMP04FS-REEL7	XIND	150 µV	SOIC	SO-8
AMP04GBC	25°C	300 µV

REV. B

–5–