Analog Devices AD811AR-16-REEL7, AD811AR-16-REEL, AD811AR-16, AD811AN, AD811ACHIPS Datasheet

a	High Performance
	Video Op Amp

FEATURES

High Speed

140 MHz Bandwidth (3 dB, G = +1)

120 MHz Bandwidth (3 dB, G = +2)

35 MHz Bandwidth (0.1 dB, G = +2)

2500 V/ms Slew Rate

25 ns Settling Time to 0.1% (For a 2 V Step) 65 ns Settling Time to 0.01% (For a 10 V Step)

Excellent Video Performance (RL =150 V)

0.01% Differential Gain, 0.018 Differential Phase

Voltage Noise of 1.9 nV√Hz

Low Distortion: THD = –74 dB @ 10 MHz Excellent DC Precision

3 mV max Input Offset Voltage Flexible Operation

Specified for 65 V and 615 V Operation

62.3 V Output Swing into a 75 V Load (VS = 65 V)

APPLICATIONS

Video Crosspoint Switchers, Multimedia Broadcast

Systems

HDTV Compatible Systems

Video Line Drivers, Distribution Amplifiers

ADC/DAC Buffers

DC Restoration Circuits

Medical—Ultrasound, PET, Gamma and Counter

Applications

PRODUCT DESCRIPTION

The AD811 is a wideband current-feedback operational amplifier, optimized for broadcast quality video systems. The –3 dB bandwidth of 120 MHz at a gain of +2 and differential gain and phase of 0.01% and 0.01° (RL = 150 Ω) make the AD811 an excellent choice for all video systems. The AD811 is designed to meet a stringent 0.1 dB gain flatness specification to a bandwidth of 35 MHz (G = +2) in addition to the low differential gain and phase errors. This performance is achieved whether driving one or two back terminated 75 Ω cables, with a low power supply current of 16.5 mA. Furthermore, the AD811 is specified over a power supply range of ± 4.5 V to ± 18 V.

	0.10										0.20
	0.09					RF = 649V					0.18	– Degrees
–%	0.08					FC = 3.58MHz					0.16
						100 IRE
	0.07					MODULATED RAMP					0.14
DIFFERENTIAL GAIN												DIFFERENTIAL PHASE
	0.06					RL = 150V					0.12
	0.05										0.10
	0.04		PHASE								0.08
	0.03										0.06
	0.02	GAIN									0.04
	0.01										0.02
	5	6	7	8	9	10	11	12	13	14	15

SUPPLY VOLTAGE –6Volts

REV. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

AD811

CONNECTION DIAGRAMS

8-Lead Plastic (N-8) 20-Lead LCC (E-20A) Package

Cerdip (Q-8)

SOIC (SO-8) Packages	NC	NC	NC	NC NC
	3	2	1	20 19

NC					NC		NC 4			18 NC
		1		8			NC 5		AD811	17 NC
		2			+V S
–IN				7			–IN 6			16 +VS
+IN		3		6	OUTPUT		NC 7			15 NC
							+IN 8			14 OUTPUT
–VS		4	AD811	5	NC
		NC = NO CONNECT						9	10 11 12 13
								S	NC NC NC NC
								–V
								NC = NO CONNECT
16-Lead SOIC (R-16) Package							20-Lead SOIC (R-20) Package
NC	1				16 NC		NC	1		20 NC
NC	2				15 NC		NC	2		19	NC
–IN	3				14 +V S		NC	3		18	NC
NC	4				13 NC		–IN	4		17 +V S
+IN	5				12 OUTPUT		NC	5		16 NC
NC	6				11 NC		+IN	6		15 OUTPUT
–VS	7		AD811		10	NC	NC	7		14 NC
NC	8				9	NC	–VS	8		13	NC
	NC = NO CONNECT						NC	9	AD811	12	NC
							NC 10			11 NC
								NC = NO CONNECT

The AD811 is also excellent for pulsed applications where transient response is critical. It can achieve a maximum slew rate of greater than 2500 V/µs with a settling time of less than 25 ns to 0.1% on a 2 volt step and 65 ns to 0.01% on a 10 volt step.

The AD811 is ideal as an ADC or DAC buffer in data acquisition systems due to its low distortion up to 10 MHz and its wide unity gain bandwidth. Because the AD811 is a current feedback amplifier, this bandwidth can be maintained over a wide range of gains. The AD811 also offers low voltage and current noise of 1.9 nV/√Hz and 20 pA/√Hz, respectively, and excellent dc accuracy for wide dynamic range applications.

	12
		G = +2
	9	RL	= 150V	615V
			VS =
		RG = RFB
– dB	6
	3
GAIN
			VS = 65V
	0
	–3
	–6
	1M		10 M	100 M

FREQUENCY – Hz

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	World Wide Web Site: http://www.analog.com
Fax: [phone]	© Analog Devices, Inc., 1999

AD811–SPECIFICATIONS (@ TA = +258C and VS = 615 V dc, RLOAD = 150 Ω unless otherwise noted)

					AD811J/A1			AD811S2
Model	Conditions		VS	Min	Typ	Max	Min	Typ	Max	Units
DYNAMIC PERFORMANCE
Small Signal Bandwidth (No Peaking)
–3 dB	RFB = 562 Ω		± 15 V		140			140		MHz
G = +1
G = +2	RFB = 649 Ω		± 15 V		120			120		MHz
G = +2	RFB = 562 Ω		± 5 V		80			80		MHz
G = +10	RFB = 511 Ω		± 15 V		100			100		MHz
0.1 dB Flat	RFB = 562 Ω		± 5 V		25			25		MHz
G = +2
	RFB = 649 Ω		± 15 V		35			35		MHz
Full Power Bandwidth3	VOUT = 20 V p-p		± 15 V		40			40		MHz
Slew Rate	VOUT = 4 V p-p		± 5 V		400			400		V/µs
	VOUT = 20 V p-p		± 15 V		2500			2500		V/µs
Settling Time to 0.1%	10 V Step,	AV = –1	± 15 V		50			50		ns
Settling Time to 0.01%			± 5 V		65			65		ns
Settling Time to 0.1%	2 V Step,	AV = –1			25			25		ns
Rise Time, Fall Time	RFB = 649, AV = +2		± 15 V		3.5			3.5		ns
Differential Gain	f = 3.58 MHz		± 15 V		0.01			0.01		%
Differential Phase	f = 3.58 MHz		± 15 V		0.01			0.01		Degree
THD @ fC = 10 MHz	VOUT = 2 V p-p, AV = +2		± 15 V		–74			–74		dBc
Third Order Intercept4	@ fC = 10 MHz		± 5 V		36			36		dBm
			± 15 V		43			43		dBm
INPUT OFFSET VOLTAGE			± 5 V, ± 15 V		0.5	3		0.5	3	mV
	TMIN to TMAX					5			5	mV
Offset Voltage Drift					5			5		µV/°C
INPUT BIAS CURRENT			± 5 V, ± 15 V							µA
–Input					2	5		2	5
	TMIN to TMAX		± 5 V, ± 15 V			15			30	µA
+Input					2	10		2	10	µA
	TMIN to TMAX					20			25	µA
TRANSRESISTANCE	TMIN to TMAX
	VOUT = ± 10 V
	RL = ∞		± 15 V	0.75	1.5		0.75	1.5		MΩ
	RL = 200 Ω		± 15 V	0.5	0.75		0.5	0.75		MΩ
	VOUT = ± 2.5 V
	RL = 150 Ω		± 5 V	0.25	0.4		0.125	0.4		MΩ
COMMON-MODE REJECTION
VOS (vs. Common Mode)	VCM = ± 2.5		± 5 V
TMIN to TMAX				56	60		50	60		dB
TMIN to TMAX	VCM = ± 10 V		± 15 V	60	66		56	66		dB
Input Current (vs. Common Mode)	TMIN to TMAX				1	3		1	3	µA/V
POWER SUPPLY REJECTION	VS = ± 4.5 V to ± 18 V
VOS	TMIN to TMAX			60	70		60	70		dB
+Input Current	TMIN to TMAX				0.3	2		0.3	2	µA/V
–Input Current	TMIN to TMAX				0.4	2		0.4	2	µA/V
INPUT VOLTAGE NOISE	f = 1 kHz				1.9			1.9		nV/√Hz
INPUT CURRENT NOISE	f = 1 kHz				20			20		pA/√Hz
OUTPUT CHARACTERISTICS			± 5 V		± 2.9			± 2.9
Voltage Swing, Useful Operating Range5										V
	TJ = +25°C		± 15 V		± 12			± 12		V
Output Current					100			100		mA
Short-Circuit Current					150			150		mA
Output Resistance	(Open Loop @ 5 MHz)				9			9		Ω
INPUT CHARACTERISTICS										MΩ
+Input Resistance					1.5			1.5
–Input Resistance					14			14		Ω
Input Capacitance	+Input				7.5			7.5		pF
Common-Mode Voltage Range			± 5 V		± 3			± 3		V
			± 15 V		± 13			± 13		V
POWER SUPPLY				± 4.5		± 18	± 4.5		± 18
Operating Range			± 5 V							V
Quiescent Current					14.5	16.0		14.5	16.0	mA
			± 15 V		16.5	18.0		16.5	18.0	mA
TRANSISTOR COUNT	# of Transistors				40			40

NOTES

1The AD811JR is specified with ± 5 V power supplies only, with operation up to ± 12 volts. 2See Analog Devices’ military data sheet for 883B tested specifications.

3FPBW = slew rate/(2 π VPEAK).

4Output power level, tested at a closed loop gain of two.

5Useful operating range is defined as the output voltage at which linearity begins to degrade.

Specifications subject to change without notice.

–2–

REV. D

AD811

ABSOLUTE MAXIMUM RATINGS1		±18
Supply Voltage . . . . . . . . . . . . .	. . . . . . . . . . .		V
AD811JR Grade Only . . . . .	. . . . . . . . . . .	. . . . . . . . .±12	V
Internal Power Dissipation2 . . .	. . . . . Observe Derating Curves
Output Short Circuit Duration	. . . . . Observe Derating Curves
Common-Mode Input Voltage	. . . . . . . . . . .	. . . . . . . . . . ± VS
Differential Input Voltage . . . .	. . . . . . . . . . .	. . . . . . . . . .± 6	V
Storage Temperature Range (Q, E) . . . . . . . .		–65°C to +150°C
Storage Temperature Range (N, R) . . . . . . . .		–65°C to +125°C
Operating Temperature Range		0°C to +70°C
AD811J . . . . . . . . . . . . . . . .	. . . . . . . . . . .
AD811A . . . . . . . . . . . . . . . .	. . . . . . . . . . .	. –40°C to +85°C
AD811S . . . . . . . . . . . . . . . .	. . . . . . . . . . .	–55°C to +125°C
Lead Temperature Range (Soldering 60 sec) .		. . . . . . . +300°C

NOTES

1Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

28-Lead Plastic Package: θJA = 90°C/W 8-Lead Cerdip Package: θJA = 110°C/W 8-Lead SOIC Package: θJA = 155°C/W 16-Lead SOIC Package: θJA = 85°C/W 20-Lead SOIC Package: θJA = 80°C/W 20-Lead LCC Package: θJA = 70°C/W

ORDERING GUIDE

	Temperature	Package
Model	Range	Option*
AD811AN	–40°C to +85°C	N-8
AD811AR-16	–40°C to +85°C	R-16
AD811AR-20	–40°C to +85°C	R-20
AD811JR	0°C to +70°C	SO-8
AD811SQ/883B	–55°C to +125°C	Q-8
5962-9313101MPA	–55°C to +125°C	Q-8
AD811SE/883B	–55°C to +125°C	E-20A
5962-9313101M2A	–55°C to +125°C	E-20A
AD811JR-REEL	0°C to +70°C	SO-8
AD811JR-REEL7	0°C to +70°C	SO-8
AD811AR-16-REEL	–40°C to +85°C	R-16
AD811AR-16-REEL7	–40°C to +85°C	R-16
AD811AR-20-REEL	–40°C to +85°C	R-20
AD811ACHIPS	–40°C to +85°C	Die
AD811SCHIPS	–55°C to +125°C	Die

*E = Ceramic Leadless Chip Carrier; N = Plastic DIP; Q = Cerdip; SO (R) = Small Outline IC (SOIC).

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD811 is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is +145°C. For the cerdip and LCC packages, the maximum junction temperature is +175°C. If these maximums are exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated” condition for an extended period can result in device burnout. To ensure proper operation, it is important to observe the derating curves in Figures 17 and 18.

While the AD811 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature is not exceeded under all conditions. One important example is when the amplifier is driving a reverse terminated 75 Ω cable and the cable’s far end is shorted to a power supply. With power supplies of ± 12 volts (or less) at an ambient temperature of +25°C or less, if the cable is shorted to a supply rail, then the amplifier will not be destroyed, even if this condition persists for an extended period.

ESD SUSCEPTIBILITY

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 volts, which readily accumulate on the human body and on test equipment, can discharge without detection. Although the AD811 features proprietary ESD protection circuitry, permanent damage may still occur on these devices if they are subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid any performance degradation or loss of functionality.

METALIZATION PHOTOGRAPH

Contact Factory for Latest Dimensions.

Dimensions Shown in Inches and (mm).

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD811 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. D

–3–

AD811–Typical Performance Characteristics

6Volts–	20
					TA = +258C
RANGE	15
VOLTAGE	10
-COMMONMODE	5
	0
	0		5		10		15		20
					SUPPLY VOLTAGE –6Volts

Figure 1. Input Common-Mode Voltage Range vs. Supply

MAGNITUDE OF THE OUTPUT VOLTAGE –6 Volts

20

TA = +258C

15

NO LOAD

10

RL = 150V

5

0

0	5	10	15	20
		SUPPLY VOLTAGE –6 Volts

Figure 4. Output Voltage Swing vs. Supply

	35
p–p	30
		VS = 615V
– Volts	25
	20
VOLTAGE
	15
OUTPUT	10		VS = 65V
	5
	0
	10	100	1k	10k

LOAD RESISTANCE –V

Figure 2. Output Voltage Swing vs. Resistive Load

	10
				NONINVERTING INPUT
					65 TO 615V
–mA	0
								VS = 65V
INPUT BIAS CURRENT
					INVERTING
						INPUT
	–10
	–20					VS = 615V
	–30
	–60 –40	–20	0	20	40	60	80	100	120	140
			JUNCTION TEMPERATURE –8C

Figure 3. Input Bias Current vs. Junction Temperature

mA	21
	18
–
CURRENT
	15						VS = 615V
SUPPLY
	12
										VS = 65V
QUIESCENT	9
	6
	3
	–60		–40		–20			0		20			40		60		80		100		120		140
								JUNCTION TEMPERATURE –8C

Figure 5. Quiescent Supply Current vs. Junction

Temperature
	10
	8
mV	6						VS = 65V
–	4
VOLTAGE
	2
	0
OFFSET
	–2
	–4					VS = 615V
INPUT
	–6
	–8
	–10
	–60	–40	–20	0	20	40	60	80	100	120	140
				JUNCTION TEMPERATURE –8C

Figure 6. Input Offset Voltage vs. Junction Temperature

–4–

REV. D

																					AD811
	250												2.0
																	VS = 615V
mA																	RL = 200V
																	VOUT = 610V
SHORT CIRCUIT CURRENT –	200											TRANSRESISTANCE – MV	1.5
						VS = 615V
	150												1.0
	100				VS = 65V								0.5			VS = 65V
																RL = 150V
																VOUT = 62.5V
	50												0
	–60	–40	–20	0	20	40	60	80	100	120	140		–60 –40	–20	0	20	40	60	80	100	120	140
				JUNCTION TEMPERATURE –8C											JUNCTION TEMPERATURE –8C

Figure 7. Short Circuit Current vs. Junction Temperature

Figure 10. Transresistance vs. Junction Temperature

	10
–V
OUTPUT RESISTANCE			VS = 65V
	1
CLOSED-LOOP	0.1			VS = 615V
				GAIN = +2
				RFB = 649V
	0.01
	10k	100k	1M	10M	100M

FREQUENCY – Hz

Figure 8. Closed-Loop Output Resistance vs. Frequency

10
			RISE TIME
8						60
6						40	OVERSHOOT – %
	OVERSHOOT			VS = 615V
				VO	= 1V p–p
4				RL = 150V		20
RISETIMEns–				GAIN = +2
2						0
0
400	600	800	1.0k	1.2k	1.4k	1.6k
	VALUE OF FEEDBACK RESISTOR (RFB) –V

Figure 9. Rise Time and Overshoot vs. Value of Feedback Resistor, RFB

	100				100
Hz		NONINVERTING CURRENT VS = 65 TO 15V			Hz
– nV/			INVERTING CURRENT VS = 65 TO 15V		– pA/
NOISE VOLTAGE	10				10
			VOLTAGE NOISE VS = 615V		NOISECURRENT
	1		VOLTAGE NOISE VS = 65V		1
	10	100	1k	10k	100k
			FREQUENCY – Hz

Figure 11. Input Noise vs. Frequency

	200						10
					VO = 1V p–p
MHz	160				VS= 615V		8
					RL= 150V
–3dB BANDWIDTH –					GAIN = +2			PEAKING – dB
	120						6
				BANDWIDTH
	80						4
	40		PEAKING				2
	0						0
	400	600	800	1.0k	1.2k	1.4k	1.6k
		VALUE OF FEEDBACK RESISTOR (RFB) –V

Figure 12. 3 dB Bandwidth and Peaking vs. Value of RFB

REV. D

–5–