Analog Devices AD8039ART-REEL7, AD8039ART-REEL, AD8039AR-REEL7, AD8039AR-REEL, AD8039AR Datasheet

a		Low Power 350 MHz
		Voltage Feedback Amplifiers
		AD8038/AD8039

FEATURES

Low Power

1 mA Supply Current/Amp High Speed

350 MHz, –3 dB Bandwidth (G = +1)

425 V/ s Slew Rate

Low Cost

Low Noise

8 nV/√Hz @ 100 kHz

600 fA/√Hz @ 100 kHz

Low Input Bias Current: 750 nA Max Low Distortion

–90 dB SFDR @ 1 MHz

–65 dB SFDR @ 5 MHz

Wide Supply Range: 3 V to 12 V

Small Packaging: SOT23-8, SC70-5, and SOIC-8

APPLICATIONS

Battery-Powered Instrumentation

Filters

A/D Driver

Level Shifting

Buffering

High Density PC Boards

Photo Multiplier

CONNECTION DIAGRAMS

SOIC-8 (R)

SC70-5 (KS)

			AD8038			VOUT 1		AD8038
	NC 1			8	DISABLE			5	+VS
	–IN	2		7	+VS	–VS	2	+ –
	+IN	3		6	VOUT
						+IN	3	4	–IN
	–VS	4		5	NC

NC = NO CONNECT

SOIC-8 (R) and SOT23-8 (RT)*
		AD8039
VOUT1	1	8	+VS
–IN1	2	7	VOUT2
+IN1	3	6	–IN2
–VS	4	5	+IN2

PRODUCT DESCRIPTION

The AD8038 (single) and AD8039 (dual) amplifiers are high speed (350 MHz) voltage feedback amplifiers with an exceptionally low quiescent current of 1.0 mA/amplifier typical (1.5 mA max). The AD8038 single amplifier in the SOIC-8 package has a disable feature. Despite being low power and low cost, the amplifier provides excellent overall performance. Additionally, it offers a high slew rate of 425 V/ s and low input offset voltage of 3 mV max.

ADI’s proprietary XFCB process allows low noise operation (8 nV/√Hz and 600 fA/√Hz) at extremely low quiescent currents. Given a wide supply voltage range (3 V to 12 V), wide bandwidth, and small packaging, the AD8038 and AD8039 amplifiers are designed to work in a variety of applications where power and space are at a premium.

The AD8038 and AD8039 amplifiers have a wide input commonmode range of 1 V from either rail and will swing within 1 V of each rail on the output. These amplifiers are optimized for driving capacitive loads up to 15 pF. If driving larger capacitive loads, a small series resistor is needed to avoid excessive peaking or overshoot.

*Not yet released

REV. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

The AD8039 amplifier is the only dual low power, high speed amplifier available in a tiny SOT23-8 package, and the single AD8038 is available in both a SOIC-8 and a SC70-5 package. These amps are rated to work over the industrial temperature range of –40°C to +85°C.

	24
	21	G = +10
	18
	15	G = +5
– dB	12
	9
GAIN
	6	G = +2
	3
	0	G = +1
	–3
	–6
	0.1	1	10	100	1000
			FREQUENCY – MHz

Figure 1. Small Signal Frequency Response for Various Gains, VOUT = 500 mV p-p, VS = ±5 V

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2002

AD8038/AD8039–SPECIFICATIONS (TA = 25 C, VS = 5 V, RL = 2 k , Gain = +1, unless otherwise noted.)

Parameter	Conditions	Min	Typ	Max	Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth	G = 1, VO = 0.5 V p-p	300	350		MHz
	G = 2, VO = 0.5 V p-p		175		MHz
	G = 1, VO = 2 V p-p		100		MHz
Bandwidth for 0.1 dB Flatness	G = 2, VO = 0.2 V p-p		45		MHz
Slew Rate	G = 1, VO = 2 V Step, RL = 2 kΩ	400	425		V/µs
Overdrive Recovery Time	G = 2, 1 V Overdrive		50		ns
Settling Time to 0.1%	G = 2, VO = 2 V Step		18		ns
NOISE/HARMONIC PERFORMANCE
SFDR	fC = 1 MHz, VO = 2 V p-p, RL = 2 kΩ
Second Harmonic			–90		dBc
Third Harmonic	fC = 1 MHz, VO = 2 V p-p, RL = 2 kΩ		–92		dBc
Second Harmonic	fC = 5 MHz, VO = 2 V p-p, RL = 2 kΩ		–65		dBc
Third Harmonic	fC = 5 MHz, VO = 2 V p-p, RL = 2 kΩ		–70		dBc
Crosstalk, Output-to-Output (AD8039)	f = 5 MHz, G = 2		–70		dB
Input Voltage Noise	f = 100 kHz		8		nV/√Hz
Input Current Noise	f = 100 kHz		600		fA/√Hz
DC PERFORMANCE
Input Offset Voltage			0.5	3	mV
Input Offset Voltage Drift			4.5		µV/°C
Input Bias Current			400	750	nA
Input Bias Current Drift			3		nA/°C
Input Offset Current	VO = ± 2.5 V		25		± nA
Open-Loop Gain			70		dB
INPUT CHARACTERISTICS					MΩ
Input Resistance			10
Input Capacitance			2		pF
Input Common-Mode Voltage Range	RL = 1 kΩ		± 4		V
Common-Mode Rejection Ratio	VCM = ± 2.5 V	61	67		dB
OUTPUT CHARACTERISTICS	RL = 2 kΩ, Saturated Output		± 4
DC Output Voltage Swing					V
Capacitive Load Drive	30% Overshoot, G = +2		20		pF
POWER SUPPLY
Operating Range		3.0		12	V
Quiescent Current per Amplifier			1.0	1.5	mA
Power Supply Rejection Ratio	– Supply	–71	–77		dB
	+ Supply	–64	–70		dB
POWER-DOWN DISABLE*
Turn-On Time			180		ns
Turn-Off Time			700		ns
Disable Voltage – Part is OFF			+VS – 4.5		V
Disable Voltage – Part is ON			+VS – 2.5		V
Disabled Quiescent Current			0.2		mA
Disabled In/Out Isolation	f = 1 MHz		–60		dB

*Only available in AD8038 SOIC-8 package.

Specifications subject to change without notice.

–2–

REV. B

AD8038/AD8039

SPECIFICATIONS (TA = 25 C, VS = 5 V, RL = 2 k to VS/2, Gain = +1, unless otherwise noted.)

Parameter	Conditions	Min	Typ	Max	Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth	G = 1, VO = 0.2 V p-p	275	300		MHz
	G = 2, VO = 0.2 V p-p		150		MHz
	G = 1, VO = 2 V p-p		30		MHz
Bandwidth for 0.1 dB Flatness	G = 2, VO = 0.2 V p-p		45		MHz
Slew Rate	G = 1, VO = 2 V Step, RL = 2 kΩ	340	365		V/µs
Overdrive Recovery Time	G = 2, 1 V Overdrive		50		ns
Settling Time to 0.1%	G = 2, VO = 2 V Step		18		ns
NOISE/HARMONIC PERFORMANCE
SFDR	fC = 1 MHz, VO = 2 V p-p, RL = 2 kΩ
Second Harmonic			–82		dBc
Third Harmonic	fC = 1 MHz, VO = 2 V p-p, RL = 2 kΩ		–79		dBc
Second Harmonic	fC = 5 MHz, VO = 2 V p-p, RL = 2 kΩ		–60		dBc
Third Harmonic	fC = 5 MHz, VO = 2 V p-p, RL = 2 kΩ		–67		dBc
Crosstalk, Output-to-Output	f = 5 MHz, G = 2		–70		dB
Input Voltage Noise	f = 100 kHz		8		nV/√Hz
Input Current Noise	f = 100 kHz		600		fA/√Hz
DC PERFORMANCE
Input Offset Voltage			0.8	3	mV
Input Offset Voltage Drift			3		µV/°C
Input Bias Current			400	750	nA
Input Bias Current Drift			3		nA/°C
Input Offset Current	VO = ± 2.5 V		30		± nA
Open-Loop Gain			70		dB
INPUT CHARACTERISTICS					MΩ
Input Resistance			10
Input Capacitance	RL = 1 kΩ		2		pF
Input Common-Mode Voltage Range			1.0–4.0		V
Common-Mode Rejection Ratio	VCM = ± 1 V	59	65		dB
OUTPUT CHARACTERISTICS	RL = 2 kΩ, Saturated Output
DC Output Voltage Swing			0.9–4.1		V
Capacitive Load Drive	30% Overshoot		20		pF
POWER SUPPLY
Operating Range		3		12	V
Quiescent Current per Amplifier			0.9	1.5	mA
Power Supply Rejection Ratio		–65	–71		dB
POWER-DOWN DISABLE*
Turn-On Time			210		ns
Turn-Off Time			700		ns
Disable Voltage – Part is OFF			+VS – 4.5		V
Disable Voltage – Part is ON			+VS – 2.5		V
Disabled Quiescent Current			0.2		mA
Disabled In/Out Isolation	f = 1 MHz		–60		dB

*Only available in AD8038 SOIC-8 package.

Specifications subject to change without notice.

REV. B

–3–

AD8038/AD8039

ABSOLUTE MAXIMUM RATINGS*
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . 12.6 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . .	. . . See Figure 2
Common-Mode Input Voltage . . . . . . . . . . .	. . . . . . . . . . ± VS
Differential Input Voltage . . . . . . . . . . . . . . .	. . . . . . . . . ± 4 V
Storage Temperature . . . . . . . . . . . . . . . . . .	–65°C to +125°C
Operating Temperature Range . . . . . . . . . . .	–40°C to +85°C
Lead Temperature Range (Soldering 10 sec) .	. . . . . . . . 300°C

*Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

MAXIMUM POWER DISSIPATION

The maximum safe power dissipation in the AD8038/AD8039 package is limited by the associated rise in junction temperature (TJ) on the die. The plastic encapsulating the die will locally reach the junction temperature. At approximately 150°C, which is the glass transition temperature, the plastic will change its properties. Even temporarily exceeding this temperature limit may change the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8038/AD8039. Exceeding a junction temperature of 175°C for an extended period of time can result in changes in the silicon devices, potentially causing failure.

The still-air thermal properties of the package and PCB ( JA), ambient temperature (TA), and total power dissipated in the package (PD) determine the junction temperature of the die. The junction temperature can be calculated as follows:

– W	2.0
DISSIPATION	1.5
				SOIC-8
				SOT23-8
POWER	1.0
			SC70-5
MAXIMUM
	0.5
	0
			–25	5	35	65	95	125
	–55

AMBIENT TEMPERATURE – C

Figure 2. Maximum Power Dissipation vs.

Temperature for a Four-Layer Board

RMS output voltages should be considered. If RL is referenced to VS–, as in single-supply operation, then the total drive power is

VS IOUT.

If the RMS signal levels are indeterminate, then consider the worst case, when VOUT = VS / 4 for RL to midsupply:

PD = (VS × IS ) + (VS / 4)2 / RL

In single-supply operation with RL referenced to VS–, worst case is VOUT = VS / 2.

TJ = TA + (PD × θ JA )

The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (VS) multiplied by the quiescent current (IS). Assuming the load (RL) is referenced to midsupply, then the total drive power is

VS / 2 × IOUT, some of which is dissipated in the package and some in the load (VOUT × IOUT). The difference between the total drive

power and the load power is the drive power dissipated in the package.

PD = quiescent power + (total drive power – load power)

PD = [VS × IS ]+ [(VS / 2)× (VOUT / RL )]– [VOUT 2 / RL ]

Airflow will increase heat dissipation effectively reducing JA. Also, more metal directly in contact with the package leads from metal traces, through holes, ground, and power planes, will reduce the JA. Care must be taken to minimize parasitic capacitances at the input leads of high speed op amps as discussed in the board layout section.

Figure 2 shows the maximum safe power dissipation in the package versus the ambient temperature for the SOIC-8 (125°C/W), SC70-5 (210°C/W), and SOT23-8 (160°C/W) package on a JEDEC standard four-layer board. JA values are approximations.

OUTPUT SHORT CIRCUIT

Shorting the output to ground or drawing excessive current from the AD8038/AD8039 will likely cause a catastrophic failure.

ORDERING GUIDE

Model	Temperature Range	Package Description	Package Outline	Branding Information
AD8038AR	–40°C to +85°C	8-Lead SOIC	SO-8
AD8038AR-REEL	–40°C to +85°C	8-Lead SOIC	SO-8
AD8038AR-REEL7	–40°C to +85°C	8-Lead SOIC	SO-8
AD8038AKS-REEL	–40°C to +85°C	5-Lead SC70	KS-5	HUA
AD8038AKS-REEL7	–40°C to +85°C	5-Lead SC70	KS-5	HUA
AD8039AR	–40°C to +85°C	8-Lead SOIC	SO-8
AD8039AR-REEL	–40°C to +85°C	8-Lead SOIC	SO-8
AD8039AR-REEL7	–40°C to +85°C	8-Lead SOIC	SO-8
AD8039ART-REEL*	–40°C to +85°C	8-Lead SOT23	RT-8	HYA
AD8039ART-REEL7*	–40°C to +85°C	8-Lead SOT23	RT-8	HYA

*Under development.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8038/AD8039 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–4–

REV. B