Analog Devices AD8001AR, AD8001AQ, AD8001AN, AD8001ACHIPS, AD8001R-EB Datasheet

a		800 MHz, 50 mW
		Current Feedback Amplifier
		AD8001

FEATURES

Excellent Video Specifications (RL = 150 V, G = +2)

Gain Flatness 0.1 dB to 100 MHz 0.01% Differential Gain Error 0.0258 Differential Phase Error

Low Power

5.5 mA Max Power Supply Current (55 mW) High Speed and Fast Settling

880 MHz, –3 dB Bandwidth (G = +1)

440 MHz, –3 dB Bandwidth (G = +2)

1200 V/ms Slew Rate

10 ns Settling Time to 0.1% Low Distortion

–65 dBc THD, fC = 5 MHz

33 dBm 3rd Order Intercept, F1 = 10 MHz –66 dB SFDR, f = 5 MHz

High Output Drive

70 mA Output Current

Drives Up to Four Back-Terminated Loads (75 V Each)

While Maintaining Good Differential Gain/Phase Performance (0.05%/0.258)

APPLICATIONS

A-to-D Driver

Video Line Driver

Professional Cameras

Video Switchers

Special Effects

RF Receivers

PRODUCT DESCRIPTION

The AD8001 is a low power, high-speed amplifier designed to operate on ±5 V supplies. The AD8001 features unique

	9
			VS = 65V
	6		RFB = 820V
	3	G = +2
		RL = 100V
dB	0
–
	–3
GAIN		VS = 65V
		RFB = 1kV
	–6
	–9
	–12
	10M	100M	1G
		FREQUENCY – Hz

Figure 1. Frequency Response of AD8001

FUNCTIONAL BLOCK DIAGRAMS

8-Lead DIP (N-8, Q-8)	5-Lead
and SOIC (SO-8)	SOT-23-5

NC	1		8	NC
–IN 2			7	V+
+IN	3		6	OUT
V– 4		AD8001	5	NC

NC = NO CONNECT

		AD8001
VOUT	1	5	+VS
–V	2
S
+IN	3	4	–IN

transimpedance linearization circuitry. This allows it to drive video loads with excellent differential gain and phase performance on only 50 mW of power. The AD8001 is a current feedback amplifier and features gain flatness of 0.1 dB to 100 MHz while offering differential gain and phase error of 0.01% and 0.025°. This makes the AD8001 ideal for professional video electronics such as cameras and video switchers. Additionally, the AD8001’s low distortion and fast settling make it ideal for buffer high-speed A-to-D converters.

The AD8001 offers low power of 5.5 mA max (VS = ±5 V) and can run on a single +12 V power supply, while being capable of delivering over 70 mA of load current. These features make this amplifier ideal for portable and battery-powered applications where size and power are critical.

The outstanding bandwidth of 800 MHz along with 1200 V/ s of slew rate make the AD8001 useful in many general purpose high-speed applications where dual power supplies of up to ±6 V and single supplies from 6 V to 12 V are needed. The AD8001 is available in the industrial temperature range of –40°C to +85°C.

Figure 2. Transient Response of AD8001; 2 V Step, G = +2

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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	World Wide Web Site: http://www.analog.com
Fax: [phone]	© Analog Devices, Inc., 1999

AD8001–SPECIFICATIONS (@ TA = + 258C, VS = 65 V, RL = 100 V, unless otherwise noted)

Model			AD8001A
	Conditions	Min	Typ	Max	Units
DYNAMIC PERFORMANCE	G = +2, < 0.1 dB Peaking, RF = 750 Ω
–3 dB Small Signal Bandwidth, N Package		350	440		MHz
	G = +1, < 1 dB Peaking, RF = 1 kΩ	650	880		MHz
R Package	G = +2, < 0.1 dB Peaking, RF = 681 Ω	350	440		MHz
	G = +1, < 0.1 dB Peaking, RF = 845 Ω	575	715		MHz
RT Package	G = +2, < 0.1 dB Peaking, RF = 768 Ω	300	380		MHz
Bandwidth for 0.1 dB Flatness	G = +1, < 0.1 dB Peaking, RF = 1 kΩ	575	795		MHz
	G = +2, RF = 750 Ω	85	110		MHz
N Package
R Package	G = +2, RF = 681 Ω	100	125		MHz
RT Package	G = +2, RF = 768 Ω	120	145		MHz
Slew Rate	G = +2, VO = 2 V Step	800	1000		V/µs
	G = –1, VO = 2 V Step	960	1200		V/µs
Settling Time to 0.1%	G = –1, VO = 2 V Step		10		ns
Rise and Fall Time	G = +2, VO = 2 V Step, RF = 649 Ω		1.4		ns
NOISE/HARMONIC PERFORMANCE	fC = 5 MHz, VO = 2 V p-p		–65		dBc
Total Harmonic Distortion
	G = +2, RL = 100 Ω				nV/√Hz
Input Voltage Noise	f = 10 kHz		2.0
Input Current Noise	f = 10 kHz, +In		2.0		pA/√Hz
	–In		18		pA/√Hz
Differential Gain Error	NTSC, G = +2, RL = 150 Ω		0.01	0.025	%
Differential Phase Error	NTSC, G = +2, RL = 150 Ω		0.025	0.04	Degree
Third Order Intercept	f = 10 MHz		33		dBm
1 dB Gain Compression	f = 10 MHz		14		dBm
SFDR	f = 5 MHz		–66		dB
DC PERFORMANCE
Input Offset Voltage			2.0	5.5	mV
	TMIN –TMAX		2.0	9.0	mV
Offset Drift			10		µV/°C
–Input Bias Current			5.0	25	±µA
	TMIN –TMAX			35	±µA
+Input Bias Current			3.0	6.0	±µA
	TMIN –TMAX			10	±µA
Open Loop Transresistance	VO = ±2.5 V	250	900		kΩ
	TMIN –TMAX	175			kΩ
INPUT CHARACTERISTICS					MΩ
Input Resistance	+Input		10
	–Input		50		Ω
Input Capacitance	+Input		1.5		pF
Input Common-Mode Voltage Range			3.2		±V
Common-Mode Rejection Ratio	VCM = ±2.5 V	50	54		dB
Offset Voltage
–Input Current	VCM = ±2.5 V, TMIN –TMAX		0.3	1.0	µA/V
+Input Current	VCM = ±2.5 V, TMIN –TMAX		0.2	0.7	µA/V
OUTPUT CHARACTERISTICS	RL = 150 Ω				±V
Output Voltage Swing		2.7	3.1
Output Current	RL = 37.5 Ω	50	70		mA
Short Circuit Current		85	110		mA
POWER SUPPLY		±3.0		±6.0
Operating Range					V
Quiescent Current	TMIN –TMAX		5.0	5.5	mA
Power Supply Rejection Ratio	+VS = +4 V to +6 V, –VS = –5 V	60	75		dB
	–VS = – 4 V to –6 V, +VS = +5 V	50	56		dB
–Input Current	TMIN –TMAX		0.5	2.5	µA/V
+Input Current	TMIN –TMAX		0.1	0.5	µA/V

Specifications subject to change without notice.

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AD8001

ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	12.6 V
Internal Power Dissipation2
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . . .	. 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . .	. 0.9 W
SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . .	0.5 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . .	. ±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .	±1.2 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range N, R . . . . . . . . .	–65°C to +125°C
Operating Temperature Range (A Grade) . . .	–40°C to +85°C
Lead Temperature Range (Soldering 10 sec) .	. . . . . . . +300°C

NOTES

1Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

2Specification is for device in free air: 8-Lead Plastic DIP Package: θJA = 90°C/W 8-Lead SOIC Package: θJA = 155°C/W 8-Lead Cerdip Package: θJA = 110°C/W 5-Lead SOT-23-5 Package: θJA = 260°C/W

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8001 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure.

While the AD8001 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (+150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.

	2.0
– Watts			TJ = +1508C
	1.5	8-LEAD	8-LEAD
DISSIPATION			PLASTIC DIP PACKAGE
		SOIC PACKAGE
	1.0
POWER
MAXIMUM	0.5
		5-LEAD
		SOT-23-5 PACKAGE

0

–50 –40 –30–20–10

0

10

20

30

40

50

60

70

80 90

AMBIENT TEMPERATURE –8C

			Figure 3. Plot of Maximum Power Dissipation vs.
			Temperature
		ORDERING GUIDE
	Temperature		Package	Package	Brand
Model	Range		Description	Option	Code
AD8001AN	–40°C to +85°C		8-Lead Plastic DIP	N-8
AD8001AQ	–55°C to +125°C		8-Lead Cerdip	Q-8
AD8001AR	–40°C to +85°C		8-Lead SOIC	SO-8
AD8001AR-REEL	–40°C to +85°C		13" Tape and REEL	SO-8
AD8001AR-REEL7	–40°C to +85°C		7" Tape and REEL	SO-8
AD8001ART-REEL	–40°C to +85°C		13" Tape and REEL	RT-5	HEA
AD8001ART-REEL7	–40°C to +85°C		7" Tape and REEL	RT-5	HEA
AD8001ACHIPS	–40°C to +85°C		Die Form
5962-9459301MPA1	–55°C to +125°C		8-Lead Cerdip	Q-8
AD8001R-EB+22			SOIC Evaluation Board, G = +2

NOTES

1Standard Military Drawing Device.

2Refer to Evaluation Board section.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8001 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

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–3–

AD8001
			806V
		+VS	0.001mF
			0.1mF	VOUT TO
				TEKTRONIX
	806V			CSA 404 COMM.
				SIGNAL
				ANALYZER
		AD8001
VIN			0.1mF	RL = 100V
HP8133A	50V
PULSE			0.001mF
GENERATOR
TR/TF = 50ps		–V
		S

Figure 4. Test Circuit , Gain = +2

Figure 5. 1 V Step Response, G = +2

0.5V	5ns
Figure 6. 2 V Step Response, G = +1

400mV	5ns
Figure 7. 2 V Step Response, G = +2

		909V
	+VS	0.001mF
			VOUT TO
			TEKTRONIX
			CSA 404 COMM.
			SIGNAL
			ANALYZER
	AD8001
VIN		0.1mF	RL = 100V
LeCROY 9210	50V
PULSE		0.001mF
GENERATOR
TR/TF = 350ps	–V
	S

Figure 8. Test Circuit, Gain = +1

Figure 9. 100 mV Step Response, G = +1

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GAIN – dB

									AD8001
9					1000
6	VS = 65V					VS = 65V
	R	FB	= 820V		800
						RL = 100V
				MHz
3	G = +2					G = +2
	RL = 100V			–
					400
	RFB = 1kV			BANDWIDTH
0					600				N
									PACKAGE
–3	VS = 65V
–6				–3dB			R
							PACKAGE
					200
–9
–12					0
10M	100M		1G		500	600	700	800	900	1000

FREQUENCY – Hz	VALUE OF FEEDBACK RESISTOR (RF) –V

	Figure 10. Frequency Response, G = +2
	0.1		RF =
	0		649V
	–0.1		RF = 698V
dB	–0.2		RF = 750V
	–0.3
–
		G = +2
OUTPUT
	–0.4	RL = 100V
	–0.5	VIN = 50mV
	–0.6
	–0.7
	–0.8
	–0.9
	1M	10M	100M

FREQUENCY – Hz

Figure 11. 0.1 dB Flatness, R Package (for N Package Add
50 Ω to RF)
	–50
		VOUT = 2V p-p	65V SUPPLIES
	–60
dBc		RL = 1kV
		G = +2
–
DISTORTION	–70	2ND HARMONIC
	–80
HARMONIC	–90		3RD HARMONIC
	–100
	–110	100k	1M	10M	100M
	10k
			FREQUENCY – Hz

Figure 12. Distortion vs. Frequency, RL = 1 kΩ

Figure 13. –3 dB Bandwidth vs. RF

	–50
			65V SUPPLIES
– dBc	–60	VOUT = 2V p-p
		RL = 100V
DISTORTION		G = +2
	–70
		2ND HARMONIC
HARMONIC	–80
			3RD HARMONIC
	–90
	–100	100k	1M	10M	100M
	10k
			FREQUENCY – Hz

		Figure 14. Distortion vs. Frequency, RL = 100 Ω
	Degrees	0.08
		0.06	G = +2
			RF	= 806V
	–
		0.04		2 BACK TERMINATED
	PHASE
				LOADS (75V)
		0.02
	DIFF	0.00
				1 BACK TERMINATED
				LOAD (150V)
	%	0.02
				1 AND 2 BACK TERMINATED
	–	0.01
				LOADS (150V AND 75V)
	GAIN
		0.00
	DIFF	–0.01
		–0.02	0	100
				IRE

Figure 15. Differential Gain and Differential Phase

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–5–