Analog Devices AMP03GS-REEL, AMP03GS, AMP03GP, AMP03GBC, AMP03FJ Datasheet

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Precision, Unity-Gain

Differential Amplifier

 

 

AMP03

 

 

 

FEATURES

High CMRR: 100 dB Typ

Low Nonlinearity: 0.001% Max

Low Distortion: 0.001% Typ

Wide Bandwidth: 3 MHz Typ

Fast Slew Rate: 9.5 V/ms Typ

Fast Settling (0.01%): 1 ms Typ

Low Cost

APPLICATIONS

Summing Amplifiers

Instrumentation Amplifiers

Balanced Line Receivers

Current-Voltage Conversion

Absolute Value Amplifier

4 mA–20 mA Current Transmitter

Precision Voltage Reference Applications

Lower Cost and Higher Speed Version of INA105

GENERAL DESCRIPTION

The AMP03 is a monolithic unity-gain, high speed differential amplifier. Incorporating a matched thin-film resistor network, the AMP03 features stable operation over temperature without requiring expensive external matched components. The AMP03 is a basic analog building block for differential amplifier and instrumentation applications.

The differential amplifier topology of the AMP03 serves to both amplify the difference between two signals and provide extremely high rejection of the common-mode input voltage. By providing common-mode rejection (CMR) of 100 dB typical, the AMP03 solves common problems encountered in instrumentation design. As an example, the AMP03 is ideal for performing either addition or subtraction of two signals without using expensive externally-matched precision resistors. The large commonmode rejection is made possible by matching the internal resistors to better than 0.002% and maintaining a thermally symmetric layout. Additionally, due to high CMR over frequency, the AMP03 is an ideal general amplifier for buffering signals in a noisy environment into data acquisition systems.

The AMP03 is a higher speed alternative to the INA105. Featuring slew rates of 9.5 V/μs, and a bandwidth of 3 MHz, the AMP03 offers superior performance for high speed current sources, absolute value amplifiers and summing amplifiers than the INA105.

FUNCTIONAL BLOCK DIAGRAM

 

 

AMP03

 

 

25kV

25kV

 

–IN 2

5

SENSE

 

 

7

+VCC

 

 

6

OUTPUT

 

 

4

–V

 

 

EE

+IN

25kV

25kV

 

3

1

REFERENCE

PIN CONNECTIONS

8-Lead Plastic DIP

(P Suffix)

 

 

 

 

 

 

 

REFERENCE

1

 

 

 

8

NC

 

 

AMP03

 

 

–IN

2

7

V+

TOP VIEW

 

 

 

 

+IN

3

(Not to Scale)

6

OUTPUT

 

 

 

 

 

 

 

V–

4

 

 

 

5

SENSE

 

 

 

 

 

 

 

 

NC = NO CONNECT

 

8-Lead SOIC

(S Suffix)

 

 

 

 

 

REFERENCE

1

 

8

NC

 

 

AMP03

 

 

–IN

2

7

V+

TOP VIEW

 

 

 

 

+IN

3

(Not to Scale)

6

OUTPUT

 

 

 

 

 

V–

4

 

5

SENSE

 

 

 

 

 

 

NC = NO CONNECT

 

 

Header

 

(J Suffix)

 

NC

 

8

REFERENCE 1

7 V+

–IN 2

6 OUTPUT

+IN 3

5 SENSE

 

4

 

V–

NC = NO CONNECT

REV. E

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

World Wide Web Site: http://www.analog.com

Fax: 781/326-8703

© Analog Devices, Inc., 1999

AMP03–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 615 V, TA = +258C, unless otherwise noted)

 

 

 

 

AMP03F

 

 

AMP03B

 

 

AMP03G

 

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

Offset Voltage

VOS

VCM = 0 V

–400

10

400

–700

20

700

–750

25

750

μV

Gain Error

 

No Load, VIN = ±10 V,

 

 

 

 

 

 

 

 

 

 

 

 

RS = 0 Ω

±10

0.00004 0.008

±10

0.00004 0.008

±10

0.001 0.008

%

Input Voltage Range

IVR

(Note 1)

 

 

 

 

 

 

V

Common-Mode Rejection

CMR

VCM = ±10 V

85

100

 

80

95

 

80

95

 

dB

Power Supply Rejection Ratio

PSRR

VS = ±6 V to ±18 V

 

0.6

10

 

0.6

10

 

0.7

10

μV/V

Output Swing

VO

RL = 2 kΩ

±12

±13.7

 

±12

±13.7

 

±12

±13.7

 

V

Short-Circuit Current Limit

ISC

Output Shorted

 

 

 

 

 

 

 

 

 

 

 

 

to Ground

+45/–15

 

+45/–15

 

+45/–15

 

mA

Small-Signal Bandwidth

 

RL = 2 kΩ

 

 

 

 

 

 

 

 

 

 

(–3 dB)

BW

 

3

 

 

3

 

 

3

 

MHz

Slew Rate

SR

RL = 2 kΩ

6

9.5

 

6

9.5

 

6

9.5

 

V/μs

Capacitive Load Drive

 

 

 

 

 

 

 

 

 

 

 

 

Capability

CL

No Oscillation

 

300

 

 

300

 

 

300

 

pF

Supply Current

ISY

No Load

 

2.5

3.5

 

2.5

3.5

 

2.5

3.5

mA

NOTES

1Input voltage range guaranteed by CMR test.

Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS (@ VS = 615 V, –558C TA +1258C for B Grade)

 

 

 

 

AMP03B

 

 

Parameter

Symbol

Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

Offset Voltage

VOS

VCM = 0 V

–1500

150

1500

μV

Gain Error

 

No Load, VIN = ±10 V, RS = 0 Ω

±20

0.0014

0.02

%

Input Voltage Range

IVR

VCM = ±10 V

 

 

V

Common-Mode Rejection

CMR

75

95

 

dB

Power Supply Rejection

 

VS = ±6 V to ±18 V

 

 

 

μV/V

Ratio

PSRR

 

0.7

20

Output Swing

VO

RL = 2 kΩ

±12

±13.7

 

V

Slew Rate

SR

RL = 2 kΩ

 

9.5

 

V/μs

Supply Current

ISY

No Load

 

3.0

4.0

mA

Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS (@ VS = 615 V, –408C TA +858C for F and G Grades)

 

 

 

 

AMP03F

 

AMP03G

 

 

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

 

Offset Voltage

VOS

VCM = 0 V

–1000

100

1000

–2000

200

2000

μV

Gain Error

 

No Load, VIN = ±10 V, RS = 0 Ω

±20

0.0008

0.015

±20

0.002

0.02

%

Input Voltage Range

IVR

VCM = ±10 V

 

 

 

 

V

Common-Mode Rejection

CMR

80

95

 

75

90

 

dB

Power Supply Rejection

 

VS = ±6 V to ±18 V

 

 

 

 

 

 

μV/V

Ratio

PSRR

 

0.7

15

 

1.0

15

Output Swing

VO

RL = 2 kΩ

±12

±13.7

 

±12

±13.7

 

V

Slew Rate

SR

RL = 2 kΩ

 

9.5

 

 

9.5

 

V/μs

Supply Current

ISY

No Load

 

2.6

4.0

 

2.6

4.0

mA

Specifications subject to change without notice.

–2–

REV. E

Analog Devices AMP03GS-REEL, AMP03GS, AMP03GP, AMP03GBC, AMP03FJ Datasheet

 

 

 

 

AMP03

 

 

 

 

 

WAFER TEST LIMITS (@ VS = 615 V, TA = +258C, unless otherwise noted)

 

 

 

 

 

AMP03BC

 

Parameter

Symbol

Conditions

Limit

Units

 

 

 

 

 

Offset Voltage

VOS

VS = ±18 V

0.5

mV max

Gain Error

 

No Load, VIN = ±10 V, RS = 0 Ω

0.008

% max

Input Voltage Range

IVR

VCM = ±10 V

±10

V min

Common-Mode Rejection

CMR

80

dB min

Power Supply Rejection Ratio

PSRR

VS = ±6 V to ±18 V

8

μV/V max

Output Swing

VO

RL = 2 kΩ

±12

V max

Short-Circuit Current Limit

ISC

Output Shorted to Ground

+45/–15

mA min

Supply Current

ISY

No Load

3.5

mA max

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage

Output Short-Circuit Duration . . . . . . . . . . . . . . Continuous Storage Temperature Range

P, J Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . +300°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . +150°C Operating Temperature Range

AMP03B . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C AMP03F, AMP03G . . . . . . . . . . . . . . . . . . –40°C to +85°C

Package Type

uJA3

uJC

Units

Header (J)

150

18

°C/W

8-Lead Plastic DIP (P)

103

43

°C/W

8-Lead SOIC (S)

155

40

°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2For supply voltages less than ±18 V, the absolute maximum input voltage is equal to the supply voltage.

3qJA is specified for worst case mounting conditions, i.e., qJA is specified for device in socket for header and plastic DIP packages and for device soldered to printed circuit board for SOIC package.

DICE CHARACTERISTICS

1. Reference

2. –IN

3. +IN

4. V–

5. SENSE

6. OUTPUT

7. V+

8. NC

DIE SIZE 0.076 3 0.076 inch, 5,776 sq. mils (1.93 3 1.93 mm, 3.73 sq. mm)

BURN-IN CIRCUIT

+18V

25kV

AMP03

 

25kV

25kV

ORDERING GUIDE1

 

Temperature

Package

Package

Model

Range

Description

Option2

AMP03GP

–40°C to +85°C

8-Lead Plastic DIP

N-8

AMP03BJ

–40°C to +85°C

Header

H-08B

AMP03FJ

–40°C to +85°C

Header

H-08B

AMP03BJ/883C

–55°C to +125°C

Header

H-08B

AMP03GS

–40°C to +85°C

8-Lead SOIC

SO-8

AMP03GS-REEL

–40°C to +85°C

8-Lead SOIC

SO-8

5962-9563901MGA

–55°C to +125°C

Header

H-08B

AMP03GBC

 

Die

 

 

 

 

 

NOTES

1Burn-in is available on commercial and industrial temperature range parts in plastic DIP and header packages.

2For devices processed in total compliance to MIL-STD-883, add /883 after part number. Consult factory for /883 data sheet.

–18V

SLEW RATE TEST CIRCUIT

+15V 0.1mF

AMP03

VOUT = 610V

VIN = 610V

0.1mF

–15V

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AMP03 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. E

–3–

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