a |
Closed-Loop |
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High Speed Buffer |
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BUF04* |
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FEATURES Bandwidth – 110 MHz Slew Rate – 3000 V/ms
Low Offset Voltage – <1 mV Very Low Noise – < 4 nV/ÖHz
Low Supply Current – 8.5 mA Mux Wide Supply Range – 65 V to 615 V
Drives Capacitive Loads Pin Compatible with BUF03
APPLICATIONS
Instrumentation Buffer
RF Buffer
Line Driver
High Speed Current Source
Op Amp Output Current Booster
High Performance Audio
High Speed AD/DA
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FUNCTIONAL BLOCK DIAGRAMS |
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Plastic DIP |
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8-Lead Narrow-Body SO |
8-Lead and Cerdip |
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(S Suffix) |
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(P, Z Suffix) |
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1 |
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BUF04 |
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NULL |
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1 |
BUF04 |
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8 |
NULL |
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NC |
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2 |
Top View |
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7 |
V+ |
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IN |
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3 |
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6 |
OUT |
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V– |
4 |
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5 |
NC |
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NC = NO CONNECT |
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GENERAL DESCRIPTION
The BUF04 is a wideband, closed-loop buffer that combines state of the art dynamic performance with excellent dc performance. This combination enables designers to maximize system performance without any speed versus dc accuracy compromises.
Built on a high speed Complementary Bipolar (CB) process for better power performance ratio, the BUF04 consumes less than 8.5 mA operating from ±5 V or ±15 V supplies. With a 2000 V/μs min slew rate, and 100 MHz gain bandwidth product, the BUF04 is ideally suited for use in high speed applications where low power dissipation is critical.
Full ±10 V output swing over the extended temperature range along with outstanding ac performance and high loop gain accuracy makes the device useful in high speed data acquisition systems.
High slew rate and very low noise and THD, coupled with wide input and output dynamic range, make the BUF04 an excellent choice for video and high performance audio circuits.
The BUF04’s inherent ability to drive capacitive loads over a wide voltage and temperature range makes it extremely useful for a wide variety of applications in military, industrial, and commercial equipment.
The BUF04 is specified over the extended industrial (–40°C to +85°C) and military (–55°C to +125°C) temperature range. BUF04s are available in plastic and ceramic DIP plus SO-8 surface mount packages.
Contact your local sales office for MIL-STD-883 data sheet and availability.
*Patent pending.
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703
BUF04–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = 615.0 V, TA = +258C unless otherwise noted)
Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Units |
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INPUT CHARACTERISTICS |
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Offset Voltage |
VOS |
–40°C £ TA £ +85°C |
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0.3 |
1 |
mV |
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1.3 |
4 |
mV |
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Input Bias Current |
IB |
VCM = 0 |
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0.7 |
5 |
mA |
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–40°C £ TA £ +85°C |
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2.2 |
10 |
mA |
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Input Voltage Range |
VCM |
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± 13 |
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V |
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Offset Voltage Drift |
DVOS/DT |
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30 |
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mV/°C |
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Offset Null Range |
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± 25 |
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mV |
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OUTPUT CHARACTERISTICS |
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RL = 150 W, |
± 10.5 |
± 11.1 |
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Output Voltage Swing |
VO |
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V |
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–40°C £ TA £ +85°C |
± 10 |
± 11 |
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V |
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RL = 2 kW, |
± 13 |
± 13.5 |
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V |
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–40°C £ TA £ +85°C |
± 13 |
± 13.15 |
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V |
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Output Current – Continuous |
IOUT |
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± 50 |
± 65 |
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mA |
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Peak Output Current |
IOUTP |
Note 2 |
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± 80 |
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mA |
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TRANSFER CHARACTERISTICS |
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RL = 2 kW |
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Gain |
AVCL |
0.995 |
0.9985 |
1.005 |
V/V |
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–40°C £ TA £ +85°C |
0.995 |
0.9980 |
1.005 |
V/V |
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Gain Linearity |
NL |
RL = 1 kW, VO = ± 10 V |
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0.005 |
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% |
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RL = 150 kW |
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0.008 |
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% |
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POWER SUPPLY |
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VS = ±4.5 V to ± 18 V |
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Power Supply Rejection Ratio |
PSRR |
76 |
93 |
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dB |
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–40°C £ TA £ +85°C |
76 |
93 |
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dB |
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Supply Current |
ISY |
VO = 0 V, RL = ¥ |
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6.9 |
8.5 |
mA |
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–40°C £ TA £ +85°C |
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6.9 |
8.5 |
mA |
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DYNAMIC PERFORMANCE |
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RL = 2 kW, CL = 70 pF |
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V/ms |
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Slew Rate |
SR |
2000 |
3000 |
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Bandwidth |
BW |
–3 dB, CL = 20 pF, RL = ¥ |
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110 |
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MHz |
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Bandwidth |
BW |
–3 dB, CL = 20 pF, RL = 1 kW |
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110 |
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MHz |
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Bandwidth |
BW |
–3 dB, CL = 20 pF, RL = 150 W |
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110 |
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MHz |
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Settling Time |
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VIN = ±10 V Step to 0.1% |
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60 |
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ns |
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Differential Phase |
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f = 3.58 MHz, RL = 150 W |
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0.02 |
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Degrees |
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f = 4.43 MHz, RL = 150 W |
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0.03 |
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Degrees |
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Differential Gain |
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f = 3.58 MHz, RL = 150 W |
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0.014 |
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% |
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f = 4.43 MHz, RL = 150 W |
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0.008 |
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% |
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Input Capacitance |
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3 |
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pF |
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NOISE PERFORMANCE |
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nV/Ö |
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Voltage Noise Density |
en |
f = 1 kHz |
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4 |
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Hz |
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Current Noise Density |
in |
f = 1 kHz |
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2 |
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pA/Ö |
Hz |
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NOTE
1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C with an LTPD of 1.3.
Specifications subject to change without notice.
–2– |
REV. 0 |
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BUF04 |
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ELECTRICAL CHARACTERISTICS (@ VS = 65.0 V, TA = +258C unless otherwise noted) |
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Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
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Units |
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INPUT CHARACTERISTICS |
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Offset Voltage |
VOS |
–40°C £ TA £ +85°C |
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0.8 |
2.0 |
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mV |
||||
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1.0 |
4 |
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mV |
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Input Bias Current |
IB |
VCM = 0 V |
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0.15 |
5 |
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mA |
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–40°C £ TA £ +85°C |
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1.6 |
10 |
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mA |
||||
Input Voltage Range |
VCM |
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± 3.0 |
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V |
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Offset Voltage Drift |
DVOS/DT |
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30 |
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mV/°C |
||||
Offset Null Range |
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± 25 |
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mV |
||||
OUTPUT CHARACTERISTICS |
|
RL = 150 W, |
± 3.0 |
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Output Voltage Swing |
VO |
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V |
||||||
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–40°C £ TA £ +85°C |
± 2.75 |
± 3.00 |
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V |
||||
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RL = 2 kW, |
± 3.0 |
± 3.6 |
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V |
||||
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–40°C £ TA £ +85°C |
± 3.0 |
± 3.35 |
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V |
||||
Output Current - Continuous |
IOUT |
|
± 40 |
± 75 |
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|
mA |
||||
Peak Output Current |
IOUTP |
Note 2 |
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mA |
|||||
TRANSFER CHARACTERISTICS |
|
RL = 2 kW, |
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Gain |
AVCL |
0.995 |
0.9977 |
1.005 |
|
V/V |
|||||
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|
–40°C £ TA £ +85°C |
0.995 |
|
1.005 |
|
V/V |
||||
Gain Linearity |
NL |
RL = 1 kW |
|
0.005 |
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% |
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POWER SUPPLY |
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VS = ±4.5 V to ± 18 V |
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Power Supply Rejection Ratio |
PSRR |
76 |
93 |
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|
dB |
|||||
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|
–40°C £ TA £ +85°C |
76 |
93 |
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|
dB |
||||
Supply Current |
ISY |
VO = 0 V, RL = ¥ |
|
6.60 |
8 |
|
mA |
||||
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|
–40°C £ TA £ +85°C |
|
6.70 |
8 |
|
mA |
||||
DYNAMIC PERFORMANCE |
|
RL = 2 kW, CL = 70 pF |
|
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V/ms |
||||
Slew Rate |
SR |
|
2000 |
|
|
||||||
Bandwidth |
BW |
–3 dB, CL = 20 pF, RL = ¥ |
|
100 |
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MHz |
||||
Bandwidth |
BW |
–3 dB, CL = 20 pF, RL = 1 kW |
|
100 |
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MHz |
||||
Bandwidth |
BW |
–3 dB, CL = 20 pF, RL = 150 W |
|
100 |
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MHz |
||||
Differential Phase |
|
f = 3.58 MHz, RL = 150 W |
|
0.13 |
|
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Degrees |
||||
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f = 4.43 MHz, RL = 150 W |
|
0.15 |
|
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Degrees |
||||
Differential Gain |
|
f = 3.58 MHz, RL = 150 W |
|
0.04 |
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% |
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f = 4.43 MHz, RL = 150 W |
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0.06 |
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% |
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NOISE PERFORMANCE |
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nV/Ö |
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Voltage Noise Density |
en |
f = 1 kHz |
|
4 |
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Hz |
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|||
Current Noise Density |
in |
f = 1 kHz |
|
2 |
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pA/Ö |
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|
Hz |
NOTE
1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
REV. 0 |
–3– |
BUF04
WAFER TEST LIMITS (@ VS = 615.0 V, TA = +258C unless otherwise noted)
Parameter |
Symbol |
Conditions |
Limit |
Units |
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Offset Voltage |
VOS |
VS = ±15 V |
1 |
mV max |
|
VOS |
VS = ±5 V |
2 |
mV max |
Input Bias Current |
IB |
VCM = 0 V |
5 |
μA max |
Power Supply Rejection Ratio |
PSRR |
V = ±4.5 V to ±18 V |
76 |
dB |
Output Voltage Range |
VO |
RL = 150 Ω |
±10.5 |
V min |
Supply Current |
ISY |
VO = 0 V, RL = 2 kΩ |
8.5 |
mA max |
Gain |
AVCL |
VO = ±10 V, RL = 2 kΩ |
1 ± 0.005 |
V/V |
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS1 |
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±18 V |
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Supply Voltage . . . . . . . . . . |
. . . . . . . . |
. . . . . . |
. . . . |
||
Input Voltage . . . . . . . . . . . . |
. . . . . . . |
. . . . . . |
. . . . |
. . . . ±18 V |
|
Maximum Power Dissipation . . . . . . . |
. . . . . . |
. . See Figure 16 |
|||
Storage Temperature Range |
|
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–65°C to +175°C |
||
Z Package . . . . . . . . . . . . . |
. . . . . . . |
. . . . . |
|||
P, S Package . . . . . . . . . . . |
. . . . . . . |
. . . . . |
–65°C to +150°C |
||
Operating Temperature Range |
|
–55°C to +125°C |
|||
BUF04Z . . . . . . . . . . . . . . |
. . . . . . . |
. . . . . |
|||
BUF04S, P . . . . . . . . . . . . |
. . . . . . . |
. . . . . . |
–40°C to +85°C |
||
Junction Temperature Range |
|
–65°C to +150°C |
|||
Z Package . . . . . . . . . . . . . |
. . . . . . . |
. . . . . |
|||
P, S Package . . . . . . . . . . . |
. . . . . . . |
. . . . . |
–65°C to +150°C |
||
Lead Temperature Range (Soldering 60 sec) . |
. . . . |
. . . +300°C |
|||
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Package Type |
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θJA2 |
θJC |
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Units |
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8-Pin Cerdip (Z) |
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148 |
16 |
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°C/W |
8-Pin Plastic DIP (P) |
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103 |
43 |
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°C/W |
8-Pin SOIC (S) |
|
158 |
43 |
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°C/W |
NOTES
1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.
2θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for cerdip, P-DIP, and LCC packages; θJA is specified for device soldered in circuit board for SOIC package.
ORDERING GUIDE
|
Temperature |
Package |
Package |
Model |
Range |
Description |
Option |
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|
BUF04AZ/883 |
–55°C to +125°C |
Cerdip |
Q-8 |
BUF04GP |
–40°C to +85°C |
Plastic DIP |
N-8 |
BUF04GS |
–40°C to +85°C |
SO |
SO-8 |
BUF04GBC |
+25°C |
DICE |
DICE |
DICE CHARACTERISTICS
BUF04 Die Size 0.075 x 0.064 inch, 5,280 Sq. Mils Substrate (Die Backside) Is Connected to V+ Transistor Count 45.
–4– |
REV. 0 |
Typical Performance Characteristics–BUF04
150
VS = ±15V
120 315 PLASTIC DIPS TA = +25°C
90 |
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UNITS |
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60 |
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30 |
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0 |
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–0.1 |
0.0 |
0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
0.6 |
OFFSET – mV
Figure 1. Input Offset Voltage (VOS) Distribution @
±15 V, P-DIP
125
VS = ±5V
100
315 PLASTIC DIPS TA = +25°C
75
UNITS
50
25
0
0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
OFFSET – mV
Figure 2. Input Offset Voltage (VOS) Distribution @
±5 V, P-DIP |
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2.0 |
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1.0 |
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±5V |
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0 |
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±15V |
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mV– |
–1.0 |
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OFFSET |
–2.0 |
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–3.0 |
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–4.0 |
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–5.0 |
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–6.0 |
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–75 |
–50 |
–25 |
0 |
25 |
50 |
75 |
100 |
125 |
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TEMPERATURE – °C |
|
|
|
Figure 3. Input Offset Voltage (VOS) vs. Temperature
200
VS = ±15V 160 315 CERDIPS
TA = +25°C
120 |
|
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UNITS |
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80 |
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40 |
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0 |
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–0.15 |
–0.1 |
–0.5 |
0 |
0.5 |
0.1 |
0.15 |
0.2 |
OFFSET – mV
Figure 4. Input Offset Voltage (VOS) Distribution @
±15 V, Cerdip
125
VS = ±5V
315 CERDIPS
100
TA = +25°C
75
UNITS
50
25
0
0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
OFFSET – mV
Figure 5. Input Offset Voltage (VOS) Distribution @
±5 V, Cerdip
|
0 |
|
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VS = ±5V |
|
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–1.0 |
|
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µA– |
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VS = ±15V |
|
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–2.0 |
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CURRENT |
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|
|
|
|
|
|
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|
–3.0 |
|
|
|
|
|
|
|
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|
BIAS |
–4.0 |
|
|
|
|
|
|
|
|
INPUT |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
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|
–5.0 |
|
|
|
|
|
|
|
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|
–6.0 |
|
|
|
|
|
|
|
|
|
–75 |
–50 |
–25 |
0 |
25 |
50 |
75 |
100 |
125 |
|
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|
TEMPERATURE – °C |
|
|
|
Figure 6. Input Bias Current vs. Temperature
REV. 0 |
–5– |