Fairchild Semiconductor 2N7002MTF, 2N7002, 2N7000 Datasheet

November 1995

2N7000 / 2N7002 / NDS7002A

N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

High density cell design for low RDS(ON).

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

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D

G

D

GS

TO-92

S

Absolute Maximum Ratings				TA = 25°C unless otherwise noted
	Symbol	Parameter			2N7000		2N7002	NDS7002A	Units
	VDSS	Drain-Source Voltage				60			V
	VDGR	Drain-Gate Voltage (R	GS	< 1 MΩ)		60			V
	VGSS	Gate-Source Voltage - Continuous				±			V
						20
		- Non Repetitive (tp < 50µs)				±40
	ID	Maximum Drain Current - Continuous			200		115	280	mA
				- Pulsed	500		800	1500
	PD	Maximum Power Dissipation			400		200	300	mW
		Derated above 25oC
					3.2		1.6	2.4	mW/°C
	TJ,TSTG	Operating and Storage Temperature Range				-55 to 150		-65 to 150	°C
	TL	Maximum Lead Temperature for Soldering				300			°C
		Purposes, 1/16" from Case for 10 Seconds
	THERMAL CHARACTERISTICS
	RθJA	Thermal Resistance, Junction-to-Ambient			312.5		625	417	°C/W

© 1997 Fairchild Semiconductor Corporation

2N7000.SAM Rev. A1

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol	Parameter	Conditions		Type	Min	Typ	Max	Units
OFF CHARACTERISTICS
BVDSS	Drain-Source Breakdown Voltage	VGS = 0 V, ID = 10 µA		All	60			V
IDSS	Zero Gate Voltage Drain Current	VDS = 48 V, VGS = 0 V		2N7000			1	µA
			TJ=125°C				1	mA
		VDS = 60 V, VGS = 0 V		2N7002			1	µA
				NDS7002A
			TJ=125°C				0.5	mA
IGSSF	Gate - Body Leakage, Forward	VGS = 15 V, VDS = 0 V		2N7000			10	nA
		VGS = 20 V, VDS = 0 V		2N7002			100	nA
				NDS7002A
IGSSR	Gate - Body Leakage, Reverse	VGS = -15 V, VDS = 0 V		2N7000			-10	nA
		VGS = -20 V, VDS = 0 V		2N7002			-100	nA
				NDS7002A
ON CHARACTERISTICS (Note 1)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 1 mA		2N7000	0.8	2.1	3	V
		VDS = VGS, ID = 250 µA		2N7002	1	2.1	2.5
				NDS7002A
RDS(ON)	Static Drain-Source On-Resistance	VGS = 10 V, ID = 500 mA		2N7000		1.2	5	Ω
			TJ =125°C			1.9	9
		VGS = 4.5 V, ID = 75 mA				1.8	5.3
		VGS = 10 V, ID = 500 mA		2N7002		1.2	7.5
			TJ =100°C			1.7	13.5
		VGS = 5.0 V, ID = 50 mA				1.7	7.5
			TJ =100C			2.4	13.5
		VGS = 10 V, ID = 500 mA		NDS7002A		1.2	2
			TJ =125°C			2	3.5
		VGS = 5.0 V, ID = 50 mA				1.7	3
			TJ =125°C			2.8	5
VDS(ON)	Drain-Source On-Voltage	VGS = 10 V, ID = 500 mA		2N7000		0.6	2.5	V
		VGS = 4.5 V, ID = 75 mA				0.14	0.4
		VGS = 10 V, ID = 500mA		2N7002		0.6	3.75
		VGS = 5.0 V, ID = 50 mA				0.09	1.5
		VGS = 10 V, ID = 500mA		NDS7002A		0.6	1
		VGS = 5.0 V, ID = 50 mA				0.09	0.15

2N7000.SAM Rev. A1

Electrical Characteristics TA = 25oC unless otherwise noted

Symbol	Parameter	Conditions				Type	Min	Typ	Max	Units
ON CHARACTERISTICS Continued (Note 1)
ID(ON)	On-State Drain Current	VGS = 4.5 V, VDS = 10 V				2N7000	75	600		mA
		VGS = 10 V, VDS > 2 VDS(on)				2N7002	500	2700
		VGS = 10 V, VDS > 2 VDS(on)				NDS7002A	500	2700
gFS	Forward Transconductance	VDS = 10 V, ID = 200 mA				2N7000	100	320		mS
		VDS > 2 VDS(on), ID = 200 mA				2N7002	80	320
		VDS > 2 VDS(on), ID = 200 mA				NDS7002A	80	320
DYNAMIC CHARACTERISTICS
Ciss	Input Capacitance	VDS = 25 V, VGS = 0 V,				All		20	50	pF
		f = 1.0 MHz
Coss	Output Capacitance					All		11	25	pF
Crss	Reverse Transfer Capacitance					All		4	5	pF
ton	Turn-On Time	V	DD	= 15 V, R	= 25 Ω,	2N7000			10	ns
					L
		ID = 500 mA, VGS = 10 V,
		RGEN = 25
		VDD = 30 V, RL = 150 Ω,				2N700			20
		ID = 200 mA, VGS = 10 V,				NDS7002A
		RGEN = 25 Ω
toff	Turn-Off Time	V	DD	= 15 V, R	= 25 Ω,	2N7000			10	ns
					L
		ID = 500 mA, VGS = 10 V,
		RGEN = 25
		VDD = 30 V, RL = 150 Ω,				2N700			20
		ID = 200 mA, VGS = 10 V,				NDS7002A
		RGEN = 25 Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS	Maximum Continuous Drain-Source Diode Forward Current					2N7002			115	mA
						NDS7002A			280
ISM	Maximum Pulsed Drain-Source Diode Forward Current					2N7002			0.8	A
						NDS7002A			1.5
VSD	Drain-Source Diode Forward	VGS = 0 V, IS = 115 mA (Note 1)				2N7002		0.88	1.5	V
	Voltage	VGS = 0 V, IS = 400 mA (Note 1)				NDS7002A		0.88	1.2

Note:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

2N7000.SAM Rev. A1

Typical Electrical Characteristics
									2N7000 / 2N7002 / NDS7002A
		2															3
	CURRENT (A)					VGS = 10V		9.0	8.0						RESISTANCE			VGS =4.0V	4 .5
										7.0				NORMALIZED			2 .5			5 .0
		1 .5
										6.0												6 .0
																	2
		1																						7 .0
														,	DRAIN -SOURCEON-
											5.0			DS(on)			1 .5										8 .0
																											9 .0
																											1 0
		0 .5
	SOURCEDRAINI , - D										4.0			R			1
		0									3.0						0 .5
		0			1	2		3		4		5					0	0 .4		0 .8		1 .2			1 .6			2
					VDS , DRAIN-SOURCE VOLTAGE (V)															I D , DRA IN CURRENT (A)
		Figure 1. On-Region Characteristics															Figure 2. On-Resistance Variation with Gate
																		Voltage and Drain Current
		2															3
	ON-RESISTANCE		V	GS	= 10V									ON-RESISTANCE				V GS = 10V
		1.75															2 .5
			ID = 500m A
, NORM A LIZED													NORMALIZED
		1.5															2			TJ = 125°C
		1.25															1 .5
DS(ON)	DRAINSOURCE-												,								25°C
													DS(on)
		1															1
																						-55°C
R													R	SOURCEDRAIN-
		0.75															0 .5
		0.5															0
		-5 0	-2 5		0	25	50	75		100	125	150
																	0	0 .4		0 .8		1 .2			1 .6			2
					T	, JUNCTION TEMPERATURE (°C)
																				I D , DRAIN CURRENT (A)
					J
		Figure 3. On-Resistance Variation															Figure 4. On-Resistance Variation with Drain
		with Temperature																Current and Temperature
		2															1 .1
		VDS	= 10V				T J	= -55°C		25°C				VOLTAGE									V			= V
																								DS
											125°C					1 .0 5											GS
	1.6																						I D		= 1 m A
(A)
													, NORMALIZED
IN CURRENT														THRESHOLD			1
	1.2
																0 .9 5
	0.8
DRA													th				0 .9
,													V	SOURCE-
D	0.4
I																0 .8 5
														GATE
		0															0 .8
		0		2		4		6		8		10					-50	-25	0	25	50	7 5	100				125	150
					VGS , GATE TO SOURCE VOLTAGE (V)														TJ , JUNCTION TEM PERATURE (°C)
		Figure 5. Transfer Characteristics															Figure 6. Gate Threshold Variation with
																		Temperature
																										2N7000.SAM Rev. A1

Typical Electrical Characteristics (continued)
							2N7000 / 2N7002 /NDS7002A
	BREAKDOWNSOURCEVOLTAGE	1.1								DRAINREVERSECURRENT (A)	2
		ID	= 250µA								0 .005	V GS	= 0 V
		1.075									1
NORMALIZED ,											0 .5
		1.05										TJ = 125°C
		1.025									0 .1				25°C
		1														-55°C
D
BV
S		0.975
S											0 .0 1
	DRAIN
		0.95								I
										,
										S
		0.925									0 .001
		-50	-25	0	25	50	75	1 0 0	1 2 5	1 5 0
				TJ , JUNCTION TEM PERATURE (°C)							0 .2		0 .4	0 .6	0 .8	1	1 .2	1 .4
													VSD	, BODY DIODE FORW A RD VOLTAGE (V)

Figure 7. Breakdown Voltage Variation	Figure 8. Body Diode Forward Voltage Variation with
with Temperature	Current and Temperature

	6 0
	4 0
							C iss
(pF)	2 0
							C oss
CAPACITANCE	1 0
	5						C rss
	2	f = 1 MHz
		VGS	= 0V
	1
	1	2	3	5	1 0	2 0	3 0	5 0
		VDS		, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Capacitance Characteristics

		VDD
		VIN	R L
		D	V OUT
VGS	RGEN
		G	DUT
		S

	1 0
(V)		V DS = 2 5 V
VOLTAGE	8
	6
-SOURCE
		ID =500m A
	4
, GATE	2		2 8 0 m A
GS
V		1 1 5 m A
	0
	0	0 .4	0 .8	1 .2	1 .6	2

Q g , GATE CHARGE (nC)

Figure 10. Gate Charge Characteristics

	t on		toff
t d(on)	tr	td(off)	t f
	90%		90%
Output, Vout	10%		10%
			Inverted
			90%
Input, Vin	50%		50%

10%

Pulse Width

Figure 11. Switching Test Circuit

Figure 12. Switching Waveforms

2N7000.SAM Rev. A1