Fairchild Semiconductor 1N4007, 1N4006, 1N4005, 1N4004, 1N4003 Datasheet

Discrete POWER & Signal

Technologies

1N4001 - 1N4007

Features

• Low forward voltage drop.

1.0 min

(25.4)

• High surge current capability.

Dimensions in

inches (mm)

0.205

(5.21)

DO-41

0.160

(4.06)

COLOR BAND DENOTES CATHODE

0.107

(2.72)

0.080

(2.03)

0.034 (0.86)

1.0 Ampere General Purpose Rectifiers

0.028

(0.71)

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

IO

Average Rectified Current

1.0

A

.375 " lead length @ TA = 75°C

if(surge)

Peak Forward Surge Current

8.3 ms single half-sine-wave

30

A

Superimposed on rated load (JEDEC method)

PD

Total Device Dissipation

2.5

W

Derate above 25°C

20

mW/°C

RθJA

Thermal Resistance, Junction to Ambient

50

°C/W

Tstg

Storage Temperature Range

-55 to +175

°C

TJ

Operating Junction Temperature

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics			TA = 25°C unless otherwise noted
Parameter						Device				Units
		4001		4002	4003	4004	4005	4006	4007
Peak Repetitive Reverse Voltage			50	100	200	400	600	800	1000	V
Maximum RMS Voltage			35	70	140	280	420	560	700	V
DC Reverse Voltage	(Rated VR)		50	100	200	400	600	800	1000	V
Maximum Reverse Current										μA
@ rated VR	TA = 25°C					5.0
	TA = 100°C					500				μA
Maximum Forward Voltage @ 1.0 A						1.1				V
Maximum Full Load Reverse Current,						30				μA
Full Cycle	TA = 75°C
Typical Junction Capacitance						15				pF
VR = 4.0 V, f = 1.0 MHz

1N4007-1N4001

ã1998 Fairchild Semiconductor Corporation