Fairchild Semiconductor 1N5822, 1N5820, 1N5821 Datasheet

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Fairchild Semiconductor 1N5822, 1N5820, 1N5821 Datasheet

Discrete POWER & Signal

Technologies

1N5820 - 1N5822

Features

3.0 ampere operation at TA = 95°C with no thermal runaway.

For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

DO-201AD

COLOR BAND DENOTES CATHODE

3.0 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

1.0 min (25.4)

Dimensions in

inches (mm)

0.375 (9.53)

0.285 (7.24)

0.210 (5.33)

0.190 (4.83)

0.052 (1.32)

0.048 (1.22)

Symbol

Parameter

Value

Units

 

 

 

 

IO

Average Rectified Current

3.0

A

 

3/8 " lead length @ TA = 95°C

 

 

if(surge)

Peak Forward Surge Current

 

 

 

8.3 ms single half-sine-wave

80

A

 

Superimposed on rated load (JEDEC method)

 

 

PD

Total Device Dissipation

3.6

W

 

Derate above 25°C

36

mW/°C

RθJA

Thermal Resistance, Junction to Ambient

28

°C/W

Tstg

Storage Temperature Range

-65 to +125

°C

TJ

Operating Junction Temperature

-65 to +125

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics

TA = 25°C unless otherwise noted

 

 

 

Parameter

 

 

 

 

Device

 

Units

 

 

 

 

 

 

 

 

 

 

 

1N5820

 

1N5821

1N5822

 

 

 

 

 

 

 

 

 

Peak Repetitive Reverse Voltage

 

 

20

 

30

40

V

 

 

 

 

 

 

 

 

Maximum RMS Voltage

 

 

14

 

21

28

V

 

 

 

 

 

 

 

DC Reverse Voltage (Rated VR)

 

20

 

30

40

V

 

 

 

 

 

 

 

 

Maximum Reverse Current

TA = 25°C

 

 

 

0.5

 

mA

@ rated VR

TA = 100°C

 

 

 

20

 

mA

Maximum Forward Voltage

@ 3.0 A

 

475

 

500

525

mV

 

@ 9.4 A

 

850

 

900

950

mV

Typical Junction Capacitance

 

 

 

 

190

 

pF

VR = 4.0 V, f = 1.0 MHz

 

 

 

 

 

 

 

1N5822-1N5820

ã1998 Fairchild Semiconductor Corporation

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