Fairchild Semiconductor 2N5486, 2N5485, 2N5484 Datasheet

Discrete POWER & Signal

Technologies

	2N5484	MMBF5484
	2N5485	MMBF5485
	2N5486	MMBF5486
		G
		D
G	TO-92
	S D	SOT-23 S

Mark: 6B / 6M / 6H

N-Channel RF Amplifier

This device is designed primarily for electronic switching applications such as low On Resistance analog switching.

Sourced from Process 50.

Absolute Maximum Ratings*		TA = 25°C unless otherwise noted
Symbol	Parameter		Value	Units
VDG	Drain-Gate Voltage		25	V
VGS	Gate-Source Voltage		- 25	V
IGF	Forward Gate Current		10	mA
TJ ,Tstg	Operating and Storage Junction Temperature Range		-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic			Max		Units
			2N5484		*MMBF5484
PD	Total Device Dissipation		350		225	mW
	Derate above 25°C		2.8		1.8	mW/°C
RθJC	Thermal Resistance, Junction to Case		125			°C/W
RθJA	Thermal Resistance, Junction to Ambient		357		556	°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

MMBF5486 / MMBF5485 / MMBF5484 / 2N5486 / 2N5485 / 2N5484

ã 1997 Fairchild Semiconductor Corporation

N-Channel RF Amplifier

(continued)

Electrical Characteristics		TA = 25°C unless otherwise noted
Symbol	Parameter		Test Conditions			Min	Typ	Max	Units
OFF CHARACTERISTICS
V(BR)GSS	Gate-Source Breakdown Voltage		IG = - 1.0 μA, VDS = 0			- 25			V
IGSS	Gate Reverse Current		VGS = - 20 V, VDS = 0					- 1.0	nA
			VGS = - 20 V, VDS = 0, TA = 100°C					- 0.2	μA
VGS(off)	Gate-Source Cutoff Voltage		VDS = 15 V, ID = 10 nA		2N5484	- 0.3		- 3.0	V
					2N5485	- 0.5		- 4.0	V
					2N5486	- 2.0		- 6.0	V
ON CHARACTERISTICS
IDSS	Zero-Gate Voltage Drain Current*		VDS = 15 V, VGS = 0		2N5484	1.0		5.0	mA
					2N5485	4.0		10	mA
					2N5486	8.0		20	mA
SMALL SIGNAL CHARACTERISTICS
gfs	Forward Transfer Conductance		VDS = 15, VGS	= 0, f = 1.0 kHz					μmhos
					2N5484	3000		6000
					2N5485	3500		7000	μmhos
					2N5486	4000		8000	μmhos
Re(yis)	Input Conductance		VDS = 15, VGS	= 0, f = 100 MHz					μmhos
					2N5484			100
			VDS = 15, VGS	= 0, f = 400 MHz
				2N5485 / 2N5486				1000	μmhos
gos	Output Conductance		VDS = 15, VGS	= 0, f = 1.0 kHz					μmhos
					2N5484			50
					2N5485			60	μmhos
					2N5486			75	μmhos
Re(yos)	Output Conductance		VDS = 15, VGS	= 0, f = 100 MHz					μmhos
					2N5484			75
			VDS = 15, VGS	= 0, f = 400 MHz
				2N5485 / 2N5486				100	μmhos
Re(yfs)	Forward Transconductance		VDS = 15, VGS	= 0, f = 100 MHz					μmhos
					2N5484	2500
			VDS = 15, VGS	= 0, f = 400 MHz
					2N5485	3000			μmhos
					2N5486	3500			μmhos
Ciss	Input Capacitance		VDS = 15, VGS	= 0, f = 1.0 MHz				5.0	pF
Crss	Reverse Transfer Capacitance		VDS = 15, VGS	= 0, f = 1.0 MHz				1.0	pF
Coss	Output Capacitance		VDS = 15, VGS	= 0, f = 1.0 MHz				2.0	pF
NF	Noise Figure		VDS= 15 V, RG = 1.0 kΩ,		2N5484			3.0	dB
			f = 100 MHz
			VDS= 15 V, RG = 1.0 kΩ,		2N5484		4.0		dB
			f = 400 MHz
			VDS= 15 V , RG = 1.0 kΩ,					2.0	dB
			f = 100 MHz	2N5485 / 2N5486
			VDS= 15 V, RG = 1.0 kΩ,					4.0	dB
			f = 400 MHz	2N5485 / 2N5486

*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2%

MMBF5486 / MMBF5485 / MMBF5484 / 2N5486 / 2N5485 / 2N5484

N-Channel RF Amplifier

(continued)

Typical Characteristics

Transfer Characteristics

	20
	V GS(OFF)	= -4.5V				V DS			= 15V
(mA)	16	T		= -55 OC
		A
		T	A	= +25 O C
CURRENT
	12	TA		= +125O C			O	C
				TA = -55
	8			T	A	= +25 O C
- DRAIN
				TA = +125O C
	4
D
I
				-2.5 V
	0	-1		-2		-3			-4	-5
	0

VGS- GATE-SOURCE VOLTAGE(V)

			Transconductance
	(mmhos)			Characteristics
		7	T	= -55 OC	V DS	= 15V
		6	A
				T = +25 O C
				A
	TRANSCONDUCTANCE
		5		TA = +125O C		= -55 OC
					T
		4			A
					T	= +25 O C
					A
		3			TA = +125O C
		2			V GS(OFF)		= -4.5V
		1	-2.5 V
	--
	gfs	0
		0	-1	-2	-3	-4	-5

VGS- GATE-SOURCE VOLTAGE(V)

Output Conductance vs

mhos)				Drain Current
		T	= +25 O C			V		= -5.5V
(u			A				GS(OFF)
		f = 1.0 kHz									5.0V
CONDUCTANCE	20		V	= 5v							10V
	10
			DG				5				15V
				10
	5				15		10				20V
				20			15
	1						20
OUTPUT						V	GS(OFF) = -3.5V
	0.5
			V GS(OFF)		= -1.5V
--
gos	0.1
	0.01		0.02	0.05	0.1	0.2		0.5	1	2	5	10

I D -- DRAIN CURRENT (mA)

Channel Resistance vs Temperature

	1000
)
Ω	500
(		V GS(OFF)	= -1.0V
RESISTANCE
	300		-2.5 V
	200
			-5.0V
	100
ON			-8.0 V
DRAIN	50
	30			V DS	= 100mV
-	20
DS
r				V	= 0 V
	10			GS
		-50	0	50	100	150
		TA - AMBIENT TEMPERATURE (°C)

Common Drain-Source

						Characteristics
	5	T	= +25 O C
									.5V	.0V
			A					0
(mA)								-		-1
	4	TYP		V GS(OFF)		= -5.0V				.5V
										-1
CURRENT										.0V
							0V			-2
	3					=				-2.5V
					GS
				V
										-3.0V
DRAIN	2
										-3.5V
--	1
D
										-4.0V
I
	0			0.2			0.4	0.6		0.8	1
	0

VDS - DRAIN-SOURCE VOLTAGE(V)

			Transconductance
		Parameter Interactions						)
	-- DRAIN "ON" RESISTANCE ( Ω )	gfs, IDSS	@ V DS = 15 V, V GS = 0 PULSE				100	TRANSCONDUCTANCE ( mmhos	)
									( mA
		r DS @ VDS= 100mV, V GS = 0					50
							30		CURRENT
							20
							10
									DRAIN
							5
							3
									--
		20	VGS(OFF)	@ VGS = 15V, I D= 1nA			2		DSS
	DS	10					1	---	I
	r							gfs
		-1	- 2	- 3	- 5	- 7	- 10

V - GATE-SOURCE VOLTAGE(V)

GS

MMBF5486 / MMBF5485 / MMBF5484 / 2N5486 / 2N5485 / 2N5484