Discrete POWER & Signal
Technologies
2N3390
2N3391
2N3391A
2N3392
2N3393
B |
TO-92 |
|
C E |
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings* |
TA = 25°C unless otherwise noted |
|
|
|
Symbol |
Parameter |
|
Value |
Units |
|
|
|
|
|
VCEO |
Collector-Emitter Voltage |
|
25 |
V |
|
|
|
|
|
VCBO |
Collector-Base Voltage |
|
25 |
V |
|
|
|
|
|
VEBO |
Emitter-Base Voltage |
|
5.0 |
V |
|
|
|
|
|
IC |
Collector Current - Continuous |
|
500 |
mA |
|
|
|
|
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
|
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics |
TA = 25°C unless otherwise noted |
|
||
Symbol |
Characteristic |
Max |
Units |
|
|
|
|
|
|
|
|
|
2N3390 / 3391/A / 3392 / 3393 |
|
PD |
Total Device Dissipation |
|
625 |
mW |
|
Derate above 25°C |
|
5.0 |
mW/°C |
RθJC |
Thermal Resistance, Junction to Case |
83.3 |
°C/W |
|
RθJA |
Thermal Resistance, Junction to Ambient |
200 |
°C/W |
|
2N3393 / 2N3392 / 2N3391A / 2N3391 / 2N3390
ã 1997 Fairchild Semiconductor Corporation |
3390-93, Rev B |
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