Fairchild Semiconductor 1N5257B, 1N5256B, 1N5255B, 1N5254B, 1N5253B Datasheet

1N5226B - 1N5257B Series Half Watt Zeners

Absolute Maximum Ratings*	TA = 25°C unless otherwise noted
Parameter		Value	Units
Storage Temperature Range		-65 to +200	°C
Maximum Junction Operating Temperature		+ 200	°C
Lead Temperature (1/16” from case for 10 seconds)		+ 230	°C
Total Device Dissipation		500	mW
Derate above 75°C		4.0	mW/°C
Surge Power**		10	W

*These ratings are limiting values above which the serviceability of the diode may be impaired.

**Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.

NOTES:

1)These ratings are based on a maximum junction temperature of 200 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Tolerance: B = 5%

DO-35

Electrical Characteristics			TA = 25°C unless otherwise noted
Device	VZ	ZZ @	IZT	ZZK @	IZK	VR	@	IR	TC
	(V)	(Ω)	(mA)	(Ω)	(mA)	(V)		(μA)	(%/°C)
1N5226B	3.3	28	20	1,600	0.25	1.0		25	- 0.07
1N5227B	3.6	24	20	1,700	0.25	1.0		15	- 0.065
1N5228B	3.9	23	20	1,900	0.25	1.0		10	- 0.06
1N5229B	4.3	22	20	2,000	0.25	1.0		5.0	+/- 0.055
1N5230B	4.7	19	20	1,900	0.25	2.0		5.0	+/- 0.03
1N5231B	5.1	17	20	1,600	0.25	2.0		5.0	+/- 0.3
1N5232B	5.6	11	20	1,600	0.25	3.0		5.0	0.038
1N5233B	6.0	7.0	20	1,600	0.25	3.5		5.0	0.038
1N5234B	6.2	7.0	20	1,000	0.25	4.0		5.0	0.045
1N5235B	6.8	5.0	20	750	0.25	5.0		3.0	0.05
1N5236B	7.5	6.0	20	500	0.25	6.0		3.0	0.058
1N5237B	8.2	8.0	20	500	0.25	6.5		3.0	0.062
1N5238B	8.7	8.0	20	600	0.25	6.5		3.0	0.065
1N5239B	9.1	10	20	600	0.25	7.0		3.0	0.068
1N5240B	10	17	20	600	0.25	8.0		3.0	0.075
1N5241B	11	22	20	600	0.25	8.4		2.0	0.076
1N5242B	12	30	20	600	0.25	9.1		1.0	0.077
VF Foward	Voltage = 1.1 V Maximum @ IF		= 200 mA for all 1N5200 series

NOTE: National preferred devices in BOLD

Series 1N5257B - 1N5226B

ã1997 Fairchild Semiconductor Corporation

1N5200B Rev. A