Fairchild Semiconductor 1N4007GP, 1N4006GP, 1N4005GP, 1N4004GP, 1N4003GP Datasheet

1N4001GP-1N4007GP

1N4001GP-1N4007GP, Rev. A

1N4001GP - 1N4007GP

1.0 Ampere Glass Passivated Rectifiers

Absolute Maximum Ratings* T

A

= 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics T

A

= 25°C unless otherwise noted

1999 Fairchild Semiconductor Corporation

Features

•Low forward voltage drop.

•High surge current capability.

• High reliability.

• High current capability.

Parameter Device Units

4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP

Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V

Maximum RMS Voltage 35 70 140 280 420 560 700 V

DC Reverse Voltage (Rated V

R

)

50 100 200 400 600 800 1000 V

Maximum Reverse Current

@ rated V

R

T

A

= 25°C

T

A

= 125°C

5.0

50

µA

µA

Maximum Forward Voltage @ 1.0 A 1.1 V

Typical Junction Capacitance

V

R

= 4.0 V, f = 1.0 MHz

8.0 pF

DO-41

COLOR BAND DENOTES CATHODE

Symbol Parameter Value Units

I

O

Average Rectified Current

.375 " lead length @ T

A

= 75

°

C

1.0 A

i

f(surge)

Peak Forward Surge Current

8.3 ms single half-sine-wave

Superimposed on rated load (JEDEC method)

30 A

P

D

Total Device Dissipation

Derate above 25

°

C

3.0

20

W

mW/

°

C

R

θ

JA

Thermal Resistance, Junction to ambient 50

°

C/W

T

stg

Storage Temperature Range -65 to +175

°

C

T

J

Operating Junction Temperature -65 to +175

°

C

1.0 min(25.4)

0.107(2.72)

0.080(2.03)

0.034(0.86)

0.028(0.71)

0.205(5.21)

0.160(4.06)

Dimensions in

inches (mm)

Discrete POWER & Signal

Technologies