Fairchild Semiconductor 1N5408, 1N5407, 1N5405, 1N5406, 1N5404 Datasheet

Discrete POWER & Signal

Technologies

1N5400 - 1N5408

Features

•3.0 ampere operation at TA = 75°C with no thermal runaway.

•High current capability.

•Low leakage.

1.0 min (25.4)

Dimensions in

inches (mm)

0.375 (9.53)

0.285 (7.24)

DO-201AD

COLOR BAND DENOTES CATHODE

0.210

(5.33)

0.190

(4.83)

3.0 Ampere General Purpose Rectifiers

0.052

(1.32)

0.048

(1.22)

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

IO

Average Rectified Current

3.0

A

.375 " lead length @ TA = 75°C

if(surge)

Peak Forward Surge Current

8.3 ms single half-sine-wave

200

A

Superimposed on rated load (JEDEC method)

PD

Total Device Dissipation

6.25

W

Derate above 25°C

50

mW/°C

RθJA

Thermal Resistance, Junction to Ambient

20

°C/W

Tstg

Storage Temperature Range

-55 to +150

°C

TJ

Operating Junction Temperature

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics			TA = 25°C unless otherwise noted
Parameter						Device							Units
		5400	5401	5402	5403		5404		5405	5406	5407	5408
Peak Repetitive Reverse Voltage		50	100	200	300		400		500	600	800	1000	V
Maximum RMS Voltage		35	70	140	210		280		350	420	560	700	V
DC Reverse Voltage	(Rated VR)	50	100	200	300		400		500	600	800	1000	V
Maximum Reverse Current													μA
@ rated VR	TA = 25°C					5.0
	TA = 100°C					500							μA
Maximum Forward Voltage @ 3.0 A						1.2							V
Maximum Full Load Reverse
Current, Full Cycle	TA = 105°C					0.5							mA
Typical Junction Capacitance						30							pF
VR = 4.0 V, f = 1.0 MHz

1N5408-1N5400

ã 1998 Fairchild Semiconductor Corporation