Fairchild Semiconductor 1N5399, 1N5398, 1N5397, 1N5396, 1N5395 Datasheet

Discrete POWER & Signal

Technologies

1N5391 - 1N5399

Features

•

1.5 ampere operation at TA = 70°C

1.0 min (25.4)

with no thermal runaway.

Dimensions in

•

High current capability.

inches (mm)

0.300

(7.62)

•

Low leakage.

DO-15

0.230

(5.84)

COLOR BAND DENOTES CATHODE

0.140

(3.56)

0.104

(2.64)

1.5 Ampere General Purpose Rectifiers

0.034 (0.86)

0.028

(0.71)

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

IO

Average Rectified Current

1.5

A

.375 " lead length @ TA = 75°C

if(surge)

Peak Forward Surge Current

8.3 ms single half-sine-wave

50

A

Superimposed on rated load (JEDEC method)

PD

Total Device Dissipation

4.8

W

Derate above 25°C

38

mW/°C

RθJA

Thermal Resistance, Junction to Ambient

26

°C/W

Tstg

Storage Temperature Range

-55 to +150

°C

TJ

Operating Junction Temperature

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics			TA = 25°C unless otherwise noted
Parameter						Device							Units
		5391	5392	5393	5394		5395		5396	5397	5398	5399
Peak Repetitive Reverse Voltage		50	100	200	300		400		500	600	800	1000	V
Maximum RMS Voltage		35	70	140	210		280		350	420	560	700	V
DC Reverse Voltage	(Rated VR)	50	100	200	300		400		500	600	800	1000	V
Maximum Reverse Current													μA
@ rated VR	TA = 25°C					5.0
	TA = 100°C					300							μA
Maximum Forward Voltage @ 1.5 A						1.4							V
Typical Junction Capacitance						25							pF
VR = 4.0 V, f = 1.0 MHz

1N5399-1N5391

ã 1998 Fairchild Semiconductor Corporation