2N5462
2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461
Discrete POWER & Signal
Technologies
2N5460
2N5461
2N5462
MMBF5460
MMBF5461
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 89.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
-
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage - 40 V
V
GS
Gate-Source Voltage 40 V
I
GF
Forward Gate Current 10 mA
T
J
,T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Symbol Characteristic Max Units
2N5460 *MMBF5460
P
D
Total Devi ce Dissipation
Derate above 25
°
C
625
5.0
350
2.8
mW
mW/
°
C
R
θ
JC
Ther mal Resist ance, Junction to C ase 83.3
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 200 357
°
C/W
G
S
D
TO-92
SOT-23
Mark: 6E / 61U
G
S
D
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã 1997 Fairchild Semiconductor Corporation
2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Typ Max Units
V
(
BR
)
GSS
Gate-Source Breakdow n Voltage
I
G
= 10
µ
A, V
DS
= 0
40 V
I
GSS
Gate Reverse Current V
GS
= 20 V, V
DS
= 0
V
GS
= 20 V, V
DS
= 0, T
A
= 100
°
C
5.0
1.0
nA
µ
A
V
GS
(
off
)
Gate-Source Cuto ff Voltage
V
DS
= 15 V, I
D
= 1.0
µ
A
2N5460
2N5461
2N5462
0.75
1.0
1.8
6.0
7.5
9.0
V
V
V
V
GS
Gate-Source Voltage V
DS
= 15 V, I
D
= 0.1 mA
2N5460
V
DS
= 15 V, I
D
= 0.2 mA
2N5461
V
DS
= 15 V, I
D
= 0.4 mA
2N5462
0.5
0.8
1.5
4.0
4.5
6.0
V
V
V
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current* V
DS
= 15 V, V
GS
= 0
2N5460
2N5461
2N5462
- 1.0
- 2.0
- 4.0
- 5.0
- 9.0
- 16
mA
mA
mA
SMALL SIGNAL CHARACTERISTICS
nV/ÖHz
g
fs
Forward Transfer Conductance V
DS
= 15, V
GS
= 0, f = 1.0 kHz
2N5460
2N5461
2N5462
1000
1500
2000
4000
5000
6000
µ
mhos
µ
mhos
µ
mhos
g
os
Output Conductance V
DS
= 15, V
GS
= 0, f = 1.0 kHz 75
µ
mhos
C
iss
Input Capacitance V
DS
= 15, V
GS
= 0, f = 1.0 MHz 5.0 7.0 pF
C
rss
Reverse Transfer Capacitance V
DS
= 15, V
GS
= 0, f = 1.0 MHz 1.0 2.0 pF
NF Noise Figure V
DS
= 15 V, V
GS
= 0,
R
G
= 1.0 megohm, f = 100 Hz,
BW = 1.0 Hz
1.0 2.5 dB
e
n
Equivalent Short-Circuit Input
Noise Voltage
V
DS
= 15 V, V
GS
= 0, f = 100 Hz,
BW = 1.0 Hz
60 115
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2%
P-Channel General Purpose Amplifier
(continued)
2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461
Typical Characteristics (continued)
Channel Resistance vs.
Temperature
Leakage Current vs. Voltage
Transfer Charactersitics
Common Drain-Source
Transfer Characteristics
P-Channel General Purpose Amplifier
(continued)
Parameter Interactions
2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461
Typical Characteristics (continued)
Noise Voltage vs. Frequency Capacitance vs. Voltage
Output Conductance vs.
Drain Current
Transconductance vs.
Drain Current
P-Channel General Purpose Amplifier
(continued)
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