Analog Devices AD7545AUE, AD7545ATE, AD7545ALN, AD7545AKR, AD7545AKN Datasheet

...
0 (0)

a

CMOS 12-Bit

Buffered Multiplying DAC

 

 

 

 

 

AD7545A

 

 

 

 

FEATURES

FUNCTIONAL BLOCK DIAGRAM

 

Improved Version of AD7545

 

 

Fast Interface Timing

 

 

All Grades 12-Bit Accurate

 

 

20-Lead DIP and Surface Mount Packages

 

 

Low Cost

 

GENERAL DESCRIPTION

The AD7545A, a 12-bit CMOS multiplying DAC with internal data latches, is an improved version of the industry standard AD7545. This new design features a WR pulse width of 100 ns, which allows interfacing to a much wider range of fast 8-bit and 16-bit microprocessors. It is loaded by a single 12-bit-wide word under the control of the CS and WR inputs; tying these control inputs low makes the input latches transparent, allowing unbuffered operation of the DAC.

PIN CONFIGURATIONS

DIP/SOIC

LCCC

PLCC

REV. C

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

World Wide Web Site: http://www.analog.com

Fax: 781/326-8703

© Analog Devices, Inc., 2000

AD7545A–SPECIFICATIONS (VREF = 10 V, VOUT1 = O V, AGND = DGND unless otherwise noted)

 

 

VDD = +5 V

VDD = +15 V

 

 

 

 

 

Limits

Limits

 

 

 

 

Parameter

Version

TA = + 25 C

1

TA = + 25 C

TMIN–TMAX

1

Units

Test Conditions/Comments

TMIN–TMAX

 

STATIC PERFORMANCE

 

 

 

 

 

 

 

 

Resolution

All

12

12

12

12

 

Bits

 

Relative Accuracy

K, B, T

± 1/2

± 1/2

± 1/2

± 1/2

 

LSB max

 

 

L, C, U

± 1/2

± 1/2

± 1/2

± 1/2

 

LSB max

Endpoint Measurement

Differential Nonlinearity

All

± 1

± 1

± 1

± 1

 

LSB max

All Grades Guaranteed 12-Bit

 

 

± 3

± 4

± 3

± 4

 

 

Monotonic Over Temperature

Gain Error

K, B, T

 

LSB max

Measured Using Internal RFB.

 

L, C, U

± 1

± 2

± 1

± 2

 

LSB max

DAC Register Loaded with All 1s.

Gain Temperature Coefficient2

All

± 5

± 5

± 5

± 5

 

ppm/°C max

 

Gain/Temperature

All

± 2

± 2

± 2

± 2

 

ppm/°C typ

 

DC Supply Rejection2

 

 

 

 

 

 

 

 

Gain/VDD

All

0.002

0.004

0.002

0.004

 

% per % max

VDD = ± 5%

Output Leakage Current at OUT1

K, L

10

50

10

50

 

nA max

DB0–DB11 = 0 V; WR, CS = 0 V

 

B, C

10

50

10

50

 

nA max

 

 

T, U

10

200

10

200

 

nA max

 

DYNAMIC PERFORMANCE

 

 

 

 

 

 

µs max

To 1/2 LSB. OUT1 Load = 100 ,

Current Settling Time2

All

1

1

1

1

 

 

 

 

 

 

 

 

 

CEXT = 13 pF. DAC Output Measured

 

 

 

 

 

 

 

 

from Falling Edge of WR, CS = 0 V.

Propagation Delay2 (from Digital

 

 

 

 

 

 

 

 

Input Change to 90%

 

 

 

 

 

 

 

OUT1 Load = 100 , CEXT = 13 pF3

of Final Analog Output)

All

200

150

 

ns max

Digital-to-Analog Glitch Impulse

All

5

5

 

nV sec typ

VREF = AGND. OUT1 Load = 100 ,

 

 

 

 

 

 

 

 

Alternately Loaded with All 0s and 1s.

AC Feedthrough2, 4

 

 

 

 

 

 

 

VREF = ± 10 V, 10 kHz Sine Wave

At OUT1

All

5

5

5

5

 

mV p-p typ

REFERENCE INPUT

 

 

 

 

 

 

kmin

Input Resistance TC = –300 ppm/°C typ

Input Resistance

All

10

10

10

10

 

(Pin 19 to GND)

 

20

20

20

20

 

kmax

Typical Input Resistance = 15 k

ANALOG OUTPUTS

 

 

 

 

 

 

 

 

Output Capacitance2

 

 

 

 

 

 

 

 

COUT1

All

70

70

70

70

 

pF max

DB0–DB11 = 0 V, WR, CS = 0 V

COUT1

 

150

150

150

150

 

pF max

DB0–DB11 = VDD, WR, CS = 0 V

DIGITAL INPUTS

 

 

 

 

 

 

 

 

Input High Voltage

 

 

 

 

 

 

 

 

VIH

All

2.4

2.4

13.5

13.5

 

V min

 

Input Low Voltage

 

 

 

 

 

 

 

 

VIL

All

0.8

0.8

1.5

1.5

 

V max

 

Input Current5

 

± 1

± 10

± 1

± 10

 

µA max

 

IIN

All

 

VIN = 0 or VDD

Input Capacitance2

 

 

 

 

 

 

 

 

DB0–DB11, WR, CS

All

8

8

8

8

 

pF max

 

SWITCHING CHARACTERISTICS2

 

 

 

 

 

 

 

 

Chip Select to Write Setup Time

K, B, L, C

100

130

75

85

 

ns min

See Timing Diagram

tCS

T, U

100

170

75

95

 

ns min

 

Chip Select to Write Hold Time

 

 

 

 

 

 

 

 

tCH

All

0

0

0

0

 

ns min

tCS tWR, TCH 0

Write Pulse Width

K, B, L, C

100

130

75

85

 

ns min

tWR

T, U

100

170

75

95

 

ns min

 

Data Setup Time

 

 

 

 

 

 

 

 

tDS

All

100

150

60

80

 

ns min

 

Data Hold Time

 

 

 

 

 

 

 

 

tDH

All

5

5

5

5

 

ns min

 

POWER SUPPLY

 

 

 

 

 

 

 

± 5% For Specified Performance

VDD

All

5

5

15

15

 

V

IDD

All

2

2

2

2

 

mA max

All Digital Inputs VIL or VIH

 

 

100

100

100

100

 

µA max

All Digital Inputs 0 V or VDD

 

 

10

10

10

10

 

µA typ

All Digital Inputs 0 V or VDD

NOTES

1Temperature range as follows: K, L Versions = 0°C to +70°C; B, C Versions = –25°C to +85°C; T, U Versions = –55°C to +125°C. 2Sample tested to ensure compliance.

3DB0–DB11 = 0 V to VDD or VDD to 0 V.

4Feedthrough can be further reduced by connecting the metal lid on the ceramic package to DGND. 6Logic inputs are MOS gates. Typical input current (+25°C) is less than 1 nA.

Specifications subject to change without notice.

–2–

REV. C

Analog Devices AD7545AUE, AD7545ATE, AD7545ALN, AD7545AKR, AD7545AKN Datasheet

AD7545A

WRITE CYCLE TIMING DIAGRAM

ABSOLUTE MAXIMUM RATINGS*

 

Operating Temperature Range

 

 

 

 

 

(TA = + 25°C unless otherwise noted)

 

Commercial (KN, LN, KP, LP) Grades . . . 0°C to +70°C

VDD to DGND

–0.3 V, +17 V

Industrial (BQ, CQ, BE, CE) Grades

. . . . –25°C to +85°C

Extended (TQ, UQ, TE, UE) Grades

. . . –55°C to +125°C

Digital Input Voltage to DGND

–0.3 V, VDD +0.3 V

Storage Temperature

 

 

 

–65°C to +150°C

VRFB, VREF to DGND

±25 V

.

. . . . . . .

.

Lead Temperature (Soldering, 10 secs)

 

 

+300°C

VPIN1 to DGND

–0.3 V, VDD +0.3 V

.

. . . . . . . . .

 

 

 

 

 

 

 

 

 

 

AGND to DGND . . . . . . . . . . . . . . . . . .

–0.3 V, VDD +0.3 V

*Stresses above those listed under Absolute Maximum Ratings may cause perma-

Power Dissipation (Any Package) to 75°C .

. . . . . . . . 450 mW

nent damage to the device. This is a stress rating only; functional operation of the

Derates above 75°C by

6 mW/°C

device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating

 

 

 

 

 

 

conditions for extended periods may affect device reliability.

 

CAUTION

 

 

 

 

 

 

 

 

 

 

 

 

ESD (electrostatic discharge) sensitive device. The digital control inputs are diode protected;

 

WARNING!

 

however, permanent damage may occur on unconnected devices subject to high energy electro-

 

 

 

 

 

static fields. Unused devices must be stored in conductive foam or shunts. The protective foam

 

 

 

 

 

should be discharged to the destination socket before devices are removed.

 

 

 

 

 

 

 

ESD SENSITIVE DEVICE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ORDERING GUIDE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Relative

 

Gain

 

 

 

 

 

Temperature

 

Accuracy

 

Error

Package

 

 

 

Model1

Range

 

TMIN–TMAX

 

TMIN–TMAX

Options2

 

 

 

AD7545AKN

0°C to +70°C

 

±1/2

 

±4

N-20

 

 

 

AD7545ALN

0°C to +70°C

 

±1/2

 

±2

N-20

 

 

 

AD7545AKR

0°C to +70°C

 

±1/2

 

±4

R-20

 

 

 

AD7545AKP

0°C to +70°C

 

±1/2

 

±4

P-20A

 

 

 

AD7545ALP

0°C to +70°C

 

±1/2

 

±2

P-20A

 

 

 

AD7545ABQ

–25°C to +85°C

 

±1/2

 

±4

Q-20

 

 

 

AD7545ACQ

–25°C to +85°C

 

±1/2

 

±2

Q-20

 

 

 

AD7545ABE

–25°C to +85°C

 

±1/2

 

±4

E-20A

 

 

 

AD7545ACE

–25°C to +85°C

 

±1/2

 

±2

E-20A

 

 

 

AD7545ATQ

–55°C to +125°C

 

±1/2

 

±4

Q-20

 

 

 

AD7545AUQ

–55°C to +125°C

 

±1/2

 

±2

Q-20

 

 

 

AD7545ATE

–55°C to +125°C

 

±1/2

 

±4

E-20A

 

 

 

AD7545AUE

–55°C to +125°C

 

±1/2

 

±2

E-20A

NOTES

1To order MIL-STD-883, Class B process parts, add /883B to part number. Contact local sales office for military data sheet.

2E = Leadless Ceramic Chip Carrier (LCCC); N = Plastic DIP; P = Plastic Leaded Chip Carrier (PLCC); Q = Cerdip; R = Small Outline IC.

REV. C

–3–

Loading...
+ 5 hidden pages