a |
CMOS 12-Bit |
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Buffered Multiplying DAC |
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AD7545A |
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FEATURES |
FUNCTIONAL BLOCK DIAGRAM |
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Improved Version of AD7545 |
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Fast Interface Timing |
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All Grades 12-Bit Accurate |
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20-Lead DIP and Surface Mount Packages |
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Low Cost |
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GENERAL DESCRIPTION
The AD7545A, a 12-bit CMOS multiplying DAC with internal data latches, is an improved version of the industry standard AD7545. This new design features a WR pulse width of 100 ns, which allows interfacing to a much wider range of fast 8-bit and 16-bit microprocessors. It is loaded by a single 12-bit-wide word under the control of the CS and WR inputs; tying these control inputs low makes the input latches transparent, allowing unbuffered operation of the DAC.
PIN CONFIGURATIONS
DIP/SOIC |
LCCC |
PLCC |
REV. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 |
World Wide Web Site: http://www.analog.com |
Fax: 781/326-8703 |
© Analog Devices, Inc., 2000 |
AD7545A–SPECIFICATIONS (VREF = 10 V, VOUT1 = O V, AGND = DGND unless otherwise noted)
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VDD = +5 V |
VDD = +15 V |
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Limits |
Limits |
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Parameter |
Version |
TA = + 25 C |
1 |
TA = + 25 C |
TMIN–TMAX |
1 |
Units |
Test Conditions/Comments |
TMIN–TMAX |
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STATIC PERFORMANCE |
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Resolution |
All |
12 |
12 |
12 |
12 |
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Bits |
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Relative Accuracy |
K, B, T |
± 1/2 |
± 1/2 |
± 1/2 |
± 1/2 |
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LSB max |
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L, C, U |
± 1/2 |
± 1/2 |
± 1/2 |
± 1/2 |
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LSB max |
Endpoint Measurement |
Differential Nonlinearity |
All |
± 1 |
± 1 |
± 1 |
± 1 |
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LSB max |
All Grades Guaranteed 12-Bit |
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± 3 |
± 4 |
± 3 |
± 4 |
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Monotonic Over Temperature |
Gain Error |
K, B, T |
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LSB max |
Measured Using Internal RFB. |
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L, C, U |
± 1 |
± 2 |
± 1 |
± 2 |
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LSB max |
DAC Register Loaded with All 1s. |
Gain Temperature Coefficient2 |
All |
± 5 |
± 5 |
± 5 |
± 5 |
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ppm/°C max |
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∆Gain/∆Temperature |
All |
± 2 |
± 2 |
± 2 |
± 2 |
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ppm/°C typ |
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DC Supply Rejection2 |
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∆Gain/∆VDD |
All |
0.002 |
0.004 |
0.002 |
0.004 |
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% per % max |
∆VDD = ± 5% |
Output Leakage Current at OUT1 |
K, L |
10 |
50 |
10 |
50 |
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nA max |
DB0–DB11 = 0 V; WR, CS = 0 V |
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B, C |
10 |
50 |
10 |
50 |
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nA max |
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T, U |
10 |
200 |
10 |
200 |
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nA max |
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DYNAMIC PERFORMANCE |
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µs max |
To 1/2 LSB. OUT1 Load = 100 Ω, |
Current Settling Time2 |
All |
1 |
1 |
1 |
1 |
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CEXT = 13 pF. DAC Output Measured |
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from Falling Edge of WR, CS = 0 V. |
Propagation Delay2 (from Digital |
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Input Change to 90% |
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OUT1 Load = 100 Ω, CEXT = 13 pF3 |
of Final Analog Output) |
All |
200 |
– |
150 |
– |
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ns max |
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Digital-to-Analog Glitch Impulse |
All |
5 |
– |
5 |
– |
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nV sec typ |
VREF = AGND. OUT1 Load = 100 Ω, |
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Alternately Loaded with All 0s and 1s. |
AC Feedthrough2, 4 |
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VREF = ± 10 V, 10 kHz Sine Wave |
At OUT1 |
All |
5 |
5 |
5 |
5 |
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mV p-p typ |
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REFERENCE INPUT |
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kΩ min |
Input Resistance TC = –300 ppm/°C typ |
Input Resistance |
All |
10 |
10 |
10 |
10 |
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(Pin 19 to GND) |
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20 |
20 |
20 |
20 |
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kΩ max |
Typical Input Resistance = 15 kΩ |
ANALOG OUTPUTS |
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Output Capacitance2 |
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COUT1 |
All |
70 |
70 |
70 |
70 |
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pF max |
DB0–DB11 = 0 V, WR, CS = 0 V |
COUT1 |
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150 |
150 |
150 |
150 |
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pF max |
DB0–DB11 = VDD, WR, CS = 0 V |
DIGITAL INPUTS |
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Input High Voltage |
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VIH |
All |
2.4 |
2.4 |
13.5 |
13.5 |
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V min |
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Input Low Voltage |
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VIL |
All |
0.8 |
0.8 |
1.5 |
1.5 |
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V max |
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Input Current5 |
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± 1 |
± 10 |
± 1 |
± 10 |
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µA max |
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IIN |
All |
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VIN = 0 or VDD |
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Input Capacitance2 |
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DB0–DB11, WR, CS |
All |
8 |
8 |
8 |
8 |
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pF max |
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SWITCHING CHARACTERISTICS2 |
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Chip Select to Write Setup Time |
K, B, L, C |
100 |
130 |
75 |
85 |
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ns min |
See Timing Diagram |
tCS |
T, U |
100 |
170 |
75 |
95 |
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ns min |
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Chip Select to Write Hold Time |
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tCH |
All |
0 |
0 |
0 |
0 |
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ns min |
tCS ≥ tWR, TCH ≥ 0 |
Write Pulse Width |
K, B, L, C |
100 |
130 |
75 |
85 |
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ns min |
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tWR |
T, U |
100 |
170 |
75 |
95 |
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ns min |
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Data Setup Time |
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tDS |
All |
100 |
150 |
60 |
80 |
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ns min |
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Data Hold Time |
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tDH |
All |
5 |
5 |
5 |
5 |
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ns min |
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POWER SUPPLY |
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± 5% For Specified Performance |
VDD |
All |
5 |
5 |
15 |
15 |
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V |
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IDD |
All |
2 |
2 |
2 |
2 |
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mA max |
All Digital Inputs VIL or VIH |
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100 |
100 |
100 |
100 |
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µA max |
All Digital Inputs 0 V or VDD |
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10 |
10 |
10 |
10 |
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µA typ |
All Digital Inputs 0 V or VDD |
NOTES
1Temperature range as follows: K, L Versions = 0°C to +70°C; B, C Versions = –25°C to +85°C; T, U Versions = –55°C to +125°C. 2Sample tested to ensure compliance.
3DB0–DB11 = 0 V to VDD or VDD to 0 V.
4Feedthrough can be further reduced by connecting the metal lid on the ceramic package to DGND. 6Logic inputs are MOS gates. Typical input current (+25°C) is less than 1 nA.
Specifications subject to change without notice.
–2– |
REV. C |
AD7545A
ABSOLUTE MAXIMUM RATINGS* |
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Operating Temperature Range |
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(TA = + 25°C unless otherwise noted) |
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Commercial (KN, LN, KP, LP) Grades . . . 0°C to +70°C |
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VDD to DGND |
–0.3 V, +17 V |
Industrial (BQ, CQ, BE, CE) Grades |
. . . . –25°C to +85°C |
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Extended (TQ, UQ, TE, UE) Grades |
. . . –55°C to +125°C |
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Digital Input Voltage to DGND |
–0.3 V, VDD +0.3 V |
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Storage Temperature |
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–65°C to +150°C |
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VRFB, VREF to DGND |
±25 V |
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. . . . . . . |
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Lead Temperature (Soldering, 10 secs) |
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+300°C |
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VPIN1 to DGND |
–0.3 V, VDD +0.3 V |
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. . . . . . . . . |
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AGND to DGND . . . . . . . . . . . . . . . . . . |
–0.3 V, VDD +0.3 V |
*Stresses above those listed under Absolute Maximum Ratings may cause perma- |
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Power Dissipation (Any Package) to 75°C . |
. . . . . . . . 450 mW |
nent damage to the device. This is a stress rating only; functional operation of the |
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Derates above 75°C by |
6 mW/°C |
device at these or any other conditions above those indicated in the operational |
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sections of this specification is not implied. Exposure to absolute maximum rating |
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conditions for extended periods may affect device reliability. |
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CAUTION |
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ESD (electrostatic discharge) sensitive device. The digital control inputs are diode protected; |
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WARNING! |
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however, permanent damage may occur on unconnected devices subject to high energy electro- |
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static fields. Unused devices must be stored in conductive foam or shunts. The protective foam |
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should be discharged to the destination socket before devices are removed. |
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ESD SENSITIVE DEVICE |
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ORDERING GUIDE |
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Relative |
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Gain |
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Temperature |
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Accuracy |
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Error |
Package |
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Model1 |
Range |
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TMIN–TMAX |
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TMIN–TMAX |
Options2 |
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AD7545AKN |
0°C to +70°C |
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±1/2 |
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±4 |
N-20 |
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AD7545ALN |
0°C to +70°C |
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±1/2 |
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±2 |
N-20 |
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AD7545AKR |
0°C to +70°C |
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±1/2 |
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±4 |
R-20 |
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AD7545AKP |
0°C to +70°C |
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±1/2 |
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±4 |
P-20A |
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AD7545ALP |
0°C to +70°C |
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±1/2 |
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±2 |
P-20A |
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AD7545ABQ |
–25°C to +85°C |
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±1/2 |
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±4 |
Q-20 |
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AD7545ACQ |
–25°C to +85°C |
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±1/2 |
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±2 |
Q-20 |
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AD7545ABE |
–25°C to +85°C |
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±1/2 |
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±4 |
E-20A |
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AD7545ACE |
–25°C to +85°C |
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±1/2 |
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±2 |
E-20A |
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AD7545ATQ |
–55°C to +125°C |
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±1/2 |
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±4 |
Q-20 |
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AD7545AUQ |
–55°C to +125°C |
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±1/2 |
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±2 |
Q-20 |
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AD7545ATE |
–55°C to +125°C |
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±1/2 |
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±4 |
E-20A |
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AD7545AUE |
–55°C to +125°C |
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±1/2 |
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±2 |
E-20A |
NOTES
1To order MIL-STD-883, Class B process parts, add /883B to part number. Contact local sales office for military data sheet.
2E = Leadless Ceramic Chip Carrier (LCCC); N = Plastic DIP; P = Plastic Leaded Chip Carrier (PLCC); Q = Cerdip; R = Small Outline IC.
REV. C |
–3– |