Analog Devices AD7524KN, AD7524JR, AD7524JP, AD7524JN, AD7524CQ Datasheet

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a

CMOS

8-Bit Buffered Multiplying DAC

 

 

 

 

 

AD7524

 

 

 

FEATURES

Microprocessor Compatible (6800, 8085, Z80, Etc.)

TTL/CMOS Compatible Inputs

On-Chip Data Latches

Endpoint Linearity

Low Power Consumption

Monotonicity Guaranteed (Full Temperature Range)

Latch Free (No Protection Schottky Required)

APPLICATIONS

Microprocessor Controlled Gain Circuits

Microprocessor Controlled Attenuator Circuits

Microprocessor Controlled Function Generation

Precision AGC Circuits

Bus Structured Instruments

GENERAL DESCRIPTION

The AD7524 is a low cost, 8-bit monolithic CMOS DAC designed for direct interface to most microprocessors.

Basically an 8-bit DAC with input latches, the AD7524’s load cycle is similar to the “write” cycle of a random access memory. Using an advanced thin-film on CMOS fabrication process, the AD7524 provides accuracy to 1/8 LSB with a typical power dissipation of less than 10 milliwatts.

A newly improved design eliminates the protection Schottky previously required and guarantees TTL compatibility when using a +5 V supply. Loading speed has been increased for compatibility with most microprocessors.

Featuring operation from +5 V to +15 V, the AD7524 interfaces directly to most microprocessor buses or output ports.

Excellent multiplying characteristics (2- or 4-quadrant) make the AD7524 an ideal choice for many microprocessor controlled gain setting and signal control applications.

FUNCTIONAL BLOCK DIAGRAM

ORDERING GUIDE

 

Temperature

Nonlinearity

Package

Model1

Range

(VDD = +15 V)

Option2

 

 

 

 

AD7524JN

–40°C to +85°C

±1/2 LSB

N-16

AD7524KN

–40°C to +85°C

±1/4 LSB

N-16

AD7524LN

–40°C to +85°C

±1/8 LSB

N-16

AD7524JP

–40°C to +85°C

±1/2 LSB

P-20A

AD7524KP

–40°C to +85°C

±1/4 LSB

P-20A

AD7524LP

–40°C to +85°C

±1/8 LSB

P-20A

AD7524JR

–40°C to +85°C

±1/2 LSB

R-16A

AD7524AQ

–40°C to +85°C

±1/2 LSB

Q-16

AD7524BQ

–40°C to +85°C

±1/4 LSB

Q-16

AD7524CQ

–40°C to +85°C

±1/8 LSB

Q-16

AD7524SQ

–55°C to +125°C

±1/2 LSB

Q-16

AD7524TQ

–55°C to +125°C

±1/4 LSB

Q-16

AD7524UQ

–55°C to +125°C

±1/8 LSB

Q-16

AD7524SE

–55°C to +125°C

±1/2 LSB

E-20A

AD7524TE

–55°C to +125°C

±1/4 LSB

E-20A

AD7524UE

–55°C to +125°C

±1/8 LSB

E-20A

NOTES

1To order MIL-STD-883, Class B processed parts, add/883B to part number. Contact your local sales office for military data sheet. For U.S. Standard Military Drawing (SMD) see DESC drawing #5962-87700.

2E = Leadless Ceramic Chip Carrier: N = Plastic DIP; P = Plastic Leaded Chip Carrier; Q = Cerdip; R = SOIC.

REV. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703

AD7524–SPECIFICATIONS(VREF = +10 V, VOUT1 = VOUT2 = 0 V, unless otherwise noted)

 

Limit, TA = +258C

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Limit, TMIN, TMAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

VDD = +5 V

VDD = +15 V

VDD = 5 V

VDD = +15 V

Units

Test Conditions/Comments

STATIC PERFORMANCE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Resolution

8

8

8

8

Bits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Relative Accuracy

±1/2

±1/2

±1/2

±1/2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

J, A, S Versions

LSB max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K, B, T Versions

±1/2

±1/4

±1/2

±1/4

LSB max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L, C, U Versions

±1/2

±1/8

±1/2

±1/8

LSB max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Monotonicity

Guaranteed

Guaranteed

Guaranteed

Guaranteed

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain Error2

±2 1/2

±1 1/4

±3 1/2

±1 1/2

LSB max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Average Gain TC3

±40

±10

±40

±10

ppm/°C

Gain TC Measured from +25°C to

 

 

 

 

 

 

TMIN or from +25°C to TMAX

DC Supply Rejection,3 DGain/DVDD

0.08

0.02

0.16

0.04

% FSR/% max

DVDD = ±10%

 

0.002

0.001

0.01

0.005

% FSR/% typ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Leakage Current

±50

±50

±400

±200

 

 

 

 

 

 

 

 

 

 

= 0 V; VREF = ±10 V

IOUT1 (Pin 1)

nA max

DB0–DB7 = 0 V;

WR

,

 

CS

IOUT2 (Pin 2)

±50

±50

±400

±200

nA max

DB0–DB7 = VDD; WR, CS = 0 V; VREF = ±10 V

DYNAMIC PERFORMANCE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Current Settling Time3

 

 

 

 

 

OUT1 Load = 100 W, CEXT = 13 pF;

 

 

 

 

(to 1/2 LSB)

400

250

500

350

ns max

WR

,

CS

=

AC Feedthrough3

 

 

 

 

 

0 V; DB0–DB7 = 0 V to VDD to 0 V.

 

 

 

 

 

VREF = ±10 V, 100 kHz Sine Wave; DB0–DB7 =

at OUT1

0.25

0.25

0.5

0.5

% FSR max

at OUT2

0.25

0.25

0.5

0.5

% FSR max

0 V;

WR

, CS = 0 V

REFERENCE INPUT

 

 

 

 

kW min

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RIN (Pin 15 to GND)4

5

5

5

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

20

20

20

kW max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ANALOG OUTPUTS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COUT1 (Pin 1)

120

120

120

120

pF max

DB0–DB7 = VDD;

WR

,

CS

= 0 V

COUT2 (Pin 2)

30

30

30

30

pF max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COUT1 (Pin 1)

30

30

30

30

pF max

DB0–DB7 = 0 V;

WR

,

CS

= 0 V

COUT2 (Pin 2)

120

120

120

120

pF max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DIGITAL INPUTS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input HIGH Voltage Requirement

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

+2.4

+13.5

+2.4

+13.5

V min

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input LOW Voltage Requirement

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

+0.8

+1.5

+0.5

+1.5

V max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Current

±1

±1

±10

±10

mA max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IIN

VIN = 0 V or VDD

Input Capacitance3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DB0–DB7

5

5

5

5

pF max

VIN = 0 V

WR, CS

20

20

20

20

pF max

VIN = 0 V

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Chip Select to Write Setup Time5

 

 

 

 

 

See Timing Diagram

tCS

 

 

 

 

 

tWR = tCS

AD7524J, K, L, A, B, C

170

100

220

130

ns min

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AD7524S, T, U

170

100

240

150

ns min

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Chip Select to Write Hold Time

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

All Grades

0

0

0

0

ns min

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Write Pulse Width

 

 

 

 

 

tCS ³ tWR, tCH ³ 0

tWR

 

 

 

 

 

AD7524J, K, L, A, B, C

170

100

220

130

ns min

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AD7524S, T, U

170

100

240

150

ns min

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Data Setup Time

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tDS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AD7524J, K, L, A, B, C

135

60

170

80

ns min

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AD7524S, T, U

135

60

170

100

ns min

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Data Hold Time

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tDH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

All Grades

10

10

10

10

ns min

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

POWER SUPPLY

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IDD

1

2

2

2

mA max

All Digital Inputs VIL or VIH

 

100

100

500

500

mA max

All Digital Inputs 0 V or VDD

NOTES

1Temperature ranges as follows: J, K, L versions: –40°C to +85°C A, B, C versions: –40°C to +85°C S, T, U versions: –55°C to +125°C

2Gain error is measured using internal feedback resistor. Full-Scale Range (FSR) = VREF. 3Guaranteed not tested.

4DAC thin-film resistor temperature coefficient is approximately –300 ppm/°C. 5AC parameter, sample tested @ +25°C to ensure conformance to specification.

Specifications subject to change without notice.

–2–

REV. B

Analog Devices AD7524KN, AD7524JR, AD7524JP, AD7524JN, AD7524CQ Datasheet

AD7524

ABSOLUTE MAXIMUM RATINGS*

(TA = +25°C, unless otherwise noted)

VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +17 V VRFB to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25 V VREF to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25 V Digital Input Voltage to GND . . . . . . . . –0.3 V to VDD +0.3 V

OUT1, OUT2 to GND . . . . . . . . . . . . . –0.3 V to VDD +0.3 V

*Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Power Dissipation (Any Package)

To +75°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW Derates above 75°C by . . . . . . . . . . . . . . . . . . . . 6 mW/°C

Operating Temperature

Commercial (J, K, L) . . . . . . . . . . . . . . . . . –40°C to +85°C Industrial (A, B, C) . . . . . . . . . . . . . . . . . . –40°C to +85°C Extended (S, T, U) . . . . . . . . . . . . . . . . . –55°C to +125°C Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . +300°C

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD7524 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

TERMINOLOGY

RELATIVE ACCURACY: A measure of the deviation from a straight line through the end points of the DAC transfer function. Normally expressed as a percentage of full scale range. For the AD7524 DAC, this holds true over the entire VREF range.

RESOLUTION: Value of the LSB. For example, a unipolar con-

verter with n bits has a resolution of (2–n) (VREF). A bipolar converter of n bits has a resolution of [2–(n–1)] [VREF]. Resolution in no

way implies linearity.

GAIN ERROR: Gain Error is a measure of the output error between an ideal DAC and the actual device output. It is measured

with all 1s in the DAC after offset error has been adjusted out and is expressed in LSBs. Gain Error is adjustable to zero with an external potentiometer.

FEEDTHROUGH ERROR: Error caused by capacitive coupling from VREF to output with all switches OFF.

OUTPUT CAPACITANCE: Capacity from OUT1 and OUT2 terminals to ground.

OUTPUT LEAKAGE CURRENT: Current which appears on OUT1 terminal with all digital inputs LOW or on OUT2 terminal when all inputs are HIGH. This is an error current which contributes an offset voltage at the amplifier output.

PIN CONFIGURATIONS

DIP, SOIC

PLCC

LCCC

REV. B

–3–

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