BD234/236/238
Medium Power Linear and Switching Applications
• Complement to BD 233/235/237 respectively
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TO-126 |
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1. Emitter 2.Collector |
3.Base |
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PNP Epitaxial Silicon Transistor |
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Absolute Maximum Ratings TC=25° C unless otherwise noted |
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Symbol |
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Parameter |
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Value |
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Units |
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VCBO |
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Collector-Base Voltage |
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: BD234 |
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- 45 |
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V |
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: BD236 |
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- 60 |
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V |
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: BD238 |
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- 100 |
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V |
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VCEO |
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Collector-Emitter Voltage |
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: BD234 |
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- 45 |
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V |
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: BD236 |
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- 60 |
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V |
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: BD238 |
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- 80 |
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V |
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VCER |
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Collector-Emitter Voltage |
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: BD234 |
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- 45 |
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V |
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: BD236 |
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- 60 |
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V |
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: BD238 |
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- 100 |
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V |
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VEBO |
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Emitter-Base Voltage |
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- 5 |
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V |
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IC |
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Collector Current (DC) |
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- 2 |
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A |
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ICP |
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*Collector Current (Pulse) |
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- 6 |
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A |
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PC |
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Collector Dissipation (TC=25° C) |
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25 |
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W |
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TJ |
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Junction Temperature |
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150 |
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° C |
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TSTG |
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Storage Temperature |
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- 65 ~ 150 |
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° C |
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Electrical Characteristics TC=25° C unless otherwise noted |
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Symbol |
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Parameter |
Test Condition |
Min. |
Typ. |
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Max. |
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Units |
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VCEO(sus) |
* Collector-Emitter Sustaining Voltage |
IC = - 100mA, IB = 0 |
- 45 |
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V |
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: BD234 |
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: BD236 |
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- 60 |
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V |
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: BD238 |
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- 80 |
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V |
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ICBO |
Collector Cut-off Current |
VCB = - 45V, IE = 0 |
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- 100 |
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A |
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: BD234 |
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: BD236 |
VCB = - 60V, IE = 0 |
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- 100 |
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A |
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: BD238 |
VCB = - 100V, IE = 0 |
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- 100 |
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A |
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IEBO |
Emitter Cut-off Current |
VEB = - 5V, IC = 0 |
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- 1 |
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mA |
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hFE |
* DC Current Gain |
VCE = - 2V, IC = - 150mA |
40 |
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VCE = - 2V, IC = - 1A |
25 |
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VCE(sat) |
* Collector-Emitter Saturation Voltage |
IC = - 1A , IB = - 0.1A |
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- 0.6 |
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V |
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VBE(on) |
* Base-Emitter ON Voltage |
VCE = - 2V, IC = - 1A |
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- 1.3 |
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V |
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fT |
Current Gain Bandwidth Product |
VCE = - 10V, IC = -250mA |
3 |
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MHz |
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* Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed
BD234/236/238
©2000 Fairchild Semiconductor International |
Rev. A, February 2000 |
Typical Characteristics
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-1000 |
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VCE = -2V |
CURRENT GAIN |
-100 |
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-10 |
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, DC |
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FE |
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h |
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-1 |
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-0.01 |
-0.1 |
-1 |
-10 |
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IC[A], COLLECTOR CURRENT |
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Figure 1. DC current Gain
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-10 |
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IC MAX. (Pulsed) |
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10 |
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CURRENT |
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100 |
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s |
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IC MAX. (Continuous) |
1ms |
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DC |
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[A], COLLECTOR |
-1 |
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C |
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I |
-0.1 |
BD234 |
BD236 |
BD238 |
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-1 |
-10 |
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-100 |
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
VOLTAGE |
-10 |
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SATURATION |
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IC = 10 IB |
-1 |
VBE(sat) |
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(sat)[V], |
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VCE(sat) |
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-0.1 |
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CE |
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(sat), V |
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BE |
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V |
-0.01 |
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-0.1 |
-1 |
-10 |
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IC[A], COLLECTOR CURRENT |
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Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
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40 |
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35 |
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DISSIPATION |
30 |
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25 |
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20 |
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POWER |
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15 |
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[W], |
10 |
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C |
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P |
5 |
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0 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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TC[oC], CASE TEMPERATURE |
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Figure 4. Power Derating
BD234/236/238
©2000 Fairchild Semiconductor International |
Rev. A, February 2000 |
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