Fairchild Semiconductor BD380, BD378, BD376 Datasheet

BD376/378/380

Medium Power Linear and Switching Applications

• Complement to BD375, BD377 and BD379 respectively

PNP Epitaxial Silicon Transistor

1

TO-126

1. Emitter

2.Collector 3.Base

Absolute Maximum Ratings TC=25° C unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

: BD376

- 50

V

: BD378

- 75

V

: BD380

- 100

V

VCEO

Collector-Emitter Voltage

: BD376

- 45

V

: BD378

- 60

V

: BD380

- 80

V

VEBO

Emitter-Base Voltage

- 5

V

IC

Collector Current (DC)

- 2

A

ICP

*Collector Current (Pulse)

- 3

A

IB

Base Current

- 1

A

P C

Collector Dissipation (TC=25° C)

25

W

TJ

Junction Temperature

150

° C

TSTG

Storage Temperature

- 55 ~ 150

° C

Electrical Characteristics TC=25° C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

VCEO(sus)

*Collector-Emitter Sustaining Voltage

IC = - 100mA, IB = 0

- 45

V

: BD376

: BD378

- 60

V

: BD380

- 80

V

BVCBO

Collector-Base

: BD376

IC = - 100µ

A, IE = 0

- 50

V

Breakdown Voltage

: BD378

- 75

V

: BD380

- 100

V

ICBO

Collector Cut-off Current

: BD376

VCB = - 45V, IE = 0

- 2

µ

A

: BD378

VCB = - 60V, IE = 0

- 2

µ

A

: BD380

VCB = - 80V, IE = 0

- 2

µ

A

IEBO

Emitter Cut-off Current

VEB = - 5V, IC = 0

- 100

µ

A

hFE1

*DC Current Gain

VCE = - 2V, IC = - 0.15A

40

375

hFE2

VCE = - 2V, IC = - 1A

20

VCE(sat)

*Collector-Emitter Saturation Voltage

IC = - 1A, IB = - 0.1A

- 1

V

VBE(on)

*Base-Emitter ON Voltage

VCE = - 2V, IC = -1A

- 1.5

V

tON

Turn ON Time

VCC = - 30V, IC = - 0.5A

50

ns

t

Turn OFF Time

IB1 = - IB2 = - 0.05A

500

ns

OFF

RL = 60Ω

* Pulse Test: PW=350

s, duty Cycle=2% Pulsed

hFE Classificntion

Classification

6

10

16

25

hFE1

40 ~ 100

63 ~ 160

100 ~ 250

150 ~ 375

BD376/378/380

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Typical Characteristics

	100
			VCE = -2V
	80
GAIN
, DC CURRENT	60
	40
FE	20
h
	0
	-10	-100	-1000
		IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

	-1.1
VOLTAGE	-1.0
	-0.9		(sat)		.IB
			VBE
				10
			=
	-0.8		Ic
EMITTER	-0.7				VBE(on)
	-0.6				VCE = -5V
BASE	-0.5
	-0.4
(V),	-0.3
BE
V	-0.2
	-0.1
	-1E-3	-0.01	-0.1		-1	-10
		IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Voltage

	40
	35
DISSIPATION	30
	25
	20
POWER	15
[W],	10
C
P	5
	0
	0	25	50	75	100	125	150	175	200
			Tc[oC], CASE TEMPERATURE

Figure 5. Power Derating

VOLTAGE	-500				BD376/378/380
	-400		IC = 20.IB
SATURATION
	-300
(sat)(mV),	-200
	-100			IC = 10.IB
CE
V
	-0
	-1E-3	-0.01	-0.1	-1	-10
		IC[A], COLLECTOR CURRENT

Figure 2. Collector-Emitter Saturation Voltage

	-10
CURRENT		ICMAX. (Continuous)
	-1
			S/b
[A], COLLECTOR			LIMITED
	-0.1
			BD376	BD378	BD380	MAX.
C
I						CEO
						V
	-0.01
	-0.1	-1	-10			-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 4. Safe Operating Area

©2000 Fairchild Semiconductor International

Rev. A, February 2000