BD537
BD533/535/537
Medium Power Linear and Switching
Applications
• Low Saturation Voltage
• Complement to BD534, BD536 and BD538 respectively
BD533/535/537
TO-220
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1.Base 2.Collector 3.Emitter
Symbol Parameter Value Units
V
CBO
V
CES
VCEO
VEBO
I
C
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage : BD533
: BD535
: BD537
Collector-Emitter Voltage : BD533
: BD535
: BD537
Collector-Emitter Voltage : BD533
: BD535
: BD537
45
60
80
45
60
80
45
60
80
Emitter-Base Voltage 5 V
Collector Current 8 A
Base Current 1 A
Collector Dissipation (TC=25°C) 50 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
ICES
IEBO
hFE
Collector Cut-off Current : BD533
: BD535
: BD537
Collector Cut-off Current : BD533
: BD535
: BD537
Emitter Cut-off Current V
* DC Current Gain : BD533/535
V
CB
V
CB
V
CB
V
CE
V
CE
V
CE
EB
V
CE
: BD537
: ALL DEVICE
: BD533/535
V
CE
V
CE
: BD537
hFE
hFE Groups
J : ALL DEVICE
K : ALL DEVICE
V
(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A
CE
(on) * Base-Emitter ON Voltage V
V
BE
f
T
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
Current Gain Bandwidth Product V
V
CE
V
CE
V
CE
V
CE
= 6A, IB = 0.6A 0.8
I
C
CE
CE
= 45V, IE = 0
= 60V, IE = 0
= 80V, IE = 0
= 45V, V
= 60V, V
= 80V, V
BE
BE
BE
= 0
= 0
= 0
= 5V, IC = 0 1 mA
= 5V, IC = 10mA
20
15
= 2V, IC = 500mA
= 2V, IC = 2A
40
25
15
= 2V, IC = 2A
= 2V, IC = 3A
= 2V, IC = 2A
= 2V, IC = 3A
30
15
40
20
= 2V, IC = 2A 1.5 V
= 1V, IC = 500mA 3 12 MHz
100
100
100
100
100
100
75
100
0.8 V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical characteristics
BD533/535/537
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
(sat)[V], SATURATION VOLTAGE
0.7
BE
V
0.6
0.5
0.1 1 10
IC[A], COLLECTOR CURRENT
IC = 10 I
VCE = 2V
B
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.1 1 10
IC = 10 I
B
IC[A], COLLECTOR CURRENT
IC Max.
10
1ms
10ms
DC
1
[A], COLLECTOR CURRENT
C
I
0.1
110100
BD533
BD535
BD537
10
µ
s
100µs
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Figure 4. Safe Operating Area
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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