Fairchild Semiconductor BD437, BD435, BD433 Datasheet

BD433/435/437

Medium Power Linear and Switching Applications

• Complement to BD434, BD436 and BD438 respectively

	1	TO-126
	1. Emitter 2.Collector		3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25° C unless otherwise noted
Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage	22	V
	: BD433
	: BD435	32	V
	: BD437	45	V
VCES	Collector-Emitter Voltage	22	V
	: BD433
	: BD435	32	V
	: BD437	45	V
VCEO	Collector-Emitter Voltage	22	V
	: BD433
	: BD435	32	V
	: BD437	45	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current (DC)	4	A
ICP	*Collector Current (Pulse)	7	A
IB	Base Current	1	A
PC	Collector Dissipation (TC=25° C)	36	W
TJ	Junction Temperature	150	° C
TSTG	Storage Temperature	- 65 ~ 150	° C

BD433/435/437

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

Electrical Characteristics TC=25° C unless otherwise noted

Symbol		Parameter	Test Condition	Min.	Typ.	Max.	Units
V	(sus)	Collector-Emitter Sustaining Voltage
CEO		: BD433	IC = 100mA, IB = 0	22			V
		: BD435		32			V
		: BD437		45			V
ICBO		Collector Cut-off Current	VCB = 22V, IE = 0			100	A
		: BD433
		: BD435	VCB = 32V, IE = 0			100	A
		: BD437	VCB = 45V, IE = 0			100	A
ICEO		Collector Cut-off Current	VCE = 22V, VBE = 0			100	A
		: BD433
		: BD435	VCE = 32V, VBE = 0			100	A
		: BD437	VCE = 45V, VBE = 0			100	A
IEBO		Emitter Cut-off Current	VEB = 5V, IC = 0			1	mA
hFE		* DC Current Gain	VCE = 5V, IC = 10mA	40	130
		: BD433/435
		: BD437		30	130
		: ALL DEVICE	VCE = 1V, IC = 500mA	85	140
		: BD433/435	VCE = 1V, IC = 2A	50
		: BD437		40
VCE(sat)		* Collector-Emitter Saturation Voltage	IC = 2A, IB = 0.2A		0.2	0.5	V
		: BD433
		: BD435			0.2	0.5	V
		: BD437			0.2	0.6	V
VBE(on)		* Base-Emitter ON Voltage	VCE = 1V, IC = 2A			1.1	V
		: BD433
		: BD435				1.1	V
		: BD437				1.2	V
fT		Current Gain Bandwidth Product	VCE = 1V, IC = 250mA	3			MHz

* Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed

BD433/435/437

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001