Fairchild Semiconductor BD682, BD678A, BD680A, BD676A Datasheet

BD676A/678A/680A/682

Medium Power Linear and Switching Applications

• Medium Power Darlington TR

• Complement to BD675A, BD677A, BD679A and BD681 respectively

PNP Epitaxial Silicon Transistor					1		TO-126
					1. Emitter 2.Collector			3.Base
Absolute Maximum Ratings TC=25° C unless otherwise noted
Symbol				Parameter			Value			Units
VCBO		Collector-Base Voltage		: BD676A			- 45			V
				: BD678A			- 60			V
				: BD680A			- 80			V
				: BD682			- 100			V
VCEO		Collector-Emitter Voltage		: BD676A			- 45			V
				: BD678A			- 60			V
				: BD680A			- 80			V
				: BD682			- 100			V
VEBO		Emitter-Base Voltage					- 5			V
IC		Collector Current (DC)					- 4			A
ICP		*Collector Current (Pulse)					- 6			A
IB		Base Current					- 100			mA
PC		Collector Dissipation (TC=25° C)					14			W
Rθ ja		Thermal Resistance (Junction to Ambient)					88			° C/W
TJ		Junction Temperature					150			° C
TSTG		Storage Temperature					- 65 ~ 150			° C
Electrical Characteristics TC=25° C unless otherwise noted
Symbol		Parameter			Test Condition		Min. Typ.	Max.		Units
VCEO(sus)	Collector-Emitter Sustaining Voltage
			: BD676A		IC = - 50mA, IB = 0		- 45
			: BD678A				- 60
			: BD680A				- 80
			: BD682				- 100
ICBO	Collector-Base Voltage		: BD676A		VCB = - 45V, IE = 0			- 200		A
			: BD678A		VCB = - 60V, IE = 0			- 200		A
			: BD680A		VCB = - 80V, IE = 0			- 200		A
			: BD682		VCB = - 100V, VBE = 0			- 200		A
ICEO	Collector Cut-off Current		: BD676A		VCE = - 45V, VBE = 0			- 500		A
			: BD678A		VCE = - 60V, VBE = 0			- 500		A
			: BD680A		VCE = - 80V, VBE = 0			- 500		A
			: BD682		VCE = - 100V, VBE = 0			- 500		A
IEBO	Emitter Cut-off Current				VEB = - 5V, IC = 0			- 2		mA
hFE	* DC Current Gain			: BD676A/678A/680A	VCE = - 3V, IC = - 2A		750
			: BD682		VCE = - 3V, IC = - 1.5A		750
VCE(sat)	* Collector-Emitter Saturation Voltage							- 2.8		V
			: BD676A/678A/680A		IC = - 2A, IB = - 40mA
			: BD682		IC = - 1.5A, IB = - 30mA			- 2.5		V
VBE(on)	* Base-Emitter On Voltage : BD676A/678A/680A				VCE = - 3V, IC = - 2A			- 2.5		V
			: BD682		VCE = - 3V, IC = - 1.5A			- 2.5		V

* Pulse Test: PW=300µ s, duty Cycle=1.5% Pulse

BD676A/678A/680A/682

©2002 Fairchild Semiconductor Corporation

Rev. B, September 2002

Typical Characteristics

	10000
			VCE = -3V
GAIN
, DC CURRENT	1000
FE
h
	100	-1	-10
	-0.1
		IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

	-4.0
	-3.6							VCE = 3V
CURRENT	-3.2
	-2.8
	-2.4
COLLECTOR	-2.0
	-1.6
	-1.2
[A],	-0.8
C
I	-0.4
	-0.0	-0.2	-0.4	-0.6	-0.8	-1.0	-1.2	-1.4	-1.6	-1.8	-2.0
	-0.0

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter On Voltage

	20
DISSIPATION	16
	12
[W], POWER	8
	4
C
P
	0	25	50	75	100	125	150	175	200
	0
			TC[oC], CASE TEMPERATURE

Figure 5. Power Derating

VOLTAGESATURATION(sat)[V],	-2.4				IC = 250 IB	BD676A/678A/680A/682
	-2.0
	-1.6
	-1.2
	-0.8
CE	-0.4
V
	-0.0		-1		-10
	-0.1
		IC[A], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
	IC(max). Pulsed			10 s
	IC(max). Continuous
CURRENT		DC
COLLECTOR	-1
				100	s
[A],			BD676A	1ms
			BD678A
IC
			BD680A	10ms
			BD682
	-0.1
		-10		-100	-1000
	-1

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 4. Safe Operating Area

©2002 Fairchild Semiconductor Corporation

Rev. B, September 2002