Fairchild Semiconductor BZX55C8V2, BZX55C6V8, BZX55C9V1, BZX55C5V6, BZX55C4V7 Datasheet

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Fairchild Semiconductor BZX55C8V2, BZX55C6V8, BZX55C9V1, BZX55C5V6, BZX55C4V7 Datasheet

Discrete POWER & Signal

Technologies

BZX55C 3V3 - 33 Series Half Watt Zeners

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Parameter

 

Value

Units

 

 

 

 

Storage Temperature Range

 

-65 to +200

°C

Maximum Junction Operating Temperature

 

+ 200

°C

Lead Temperature (1/16” from case for 10 seconds)

 

+ 230

°C

Total Device Dissipation

 

500

mW

Derate above 25°C

 

4.0

mW/°C

Surge Power**

 

30

W

 

 

 

 

*These ratings are limiting values above which the serviceability of the diode may be impaired.

**Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C.

NOTES:

1)These ratings are based on a maximum junction temperature of 200 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Tolerance: C = 5%

DO-35

Electrical Characteristics

TA = 25°C unless otherwise noted

 

 

 

 

 

Device

VZ

 

ZZ

 

IZT

ZZK

 

IZT

VR

 

IR

IR

TC

IZM

(V)

 

(Ω)

@

(mA)

(Ω)

@

(mA)

(V)

@

(μA)

@ (μA)

(%/°C)

(mA)

 

MIN

MAX

 

 

 

 

 

 

 

 

 

TA= 150°C

 

 

BZX55C 3V3

3.1

3.5

85

 

5.0

600

 

1.0

1.0

 

2.0

40

- 0.060

115

BZX55C 3V6

3.4

3.8

85

 

5.0

600

 

1.0

1.0

 

2.0

40

- 0.055

105

BZX55C 3V9

3.7

4.1

85

 

5.0

600

 

1.0

1.0

 

2.0

40

- 0.050

95

BZX55C 4V3

4.0

4.6

75

 

5.0

600

 

1.0

1.0

 

1.0

20

- 0.040

90

BZX55C 4V7

4.4

5.0

60

 

5.0

600

 

1.0

1.0

 

0.5

10

- 0.020

85

BZX55C 5V1

4.8

5.4

35

 

5.0

550

 

1.0

1.0

 

0.1

2.0

+0.010

80

BZX55C 5V6

5.2

6.0

25

 

5.0

450

 

1.0

1.0

 

0.1

2.0

+0.025

70

BZX55C 6V2

5.8

6.6

10

 

5.0

200

 

1.0

2.0

 

0.1

2.0

+0.032

64

BZX55C 6V8

6.4

7.2

8.0

 

5.0

150

 

1.0

3.0

 

0.1

2.0

+0.040

58

BZX55C 7V5

7.0

7.9

7.0

 

5.0

50

 

1.0

5.0

 

0.1

2.0

+0.045

53

BZX55C 8V2

7.7

8.7

7.0

 

5.0

50

 

1.0

6.2

 

0.1

2.0

+0.048

47

BZX55C 9V1

8.5

9.6

10

 

5.0

50

 

1.0

6.8

 

0.1

2.0

+0.050

43

BZX55C 10

9.4

10.6

15

 

5.0

70

 

1.0

7.5

 

0.1

2.0

+0.055

40

BZX55C 11

10.4

11.6

20

 

5.0

70

 

1.0

8.2

 

0.1

2.0

+0.060

36

BZX55C 12

11.4

12.7

20

 

5.0

90

 

1.0

9.1

 

0.1

2.0

+0.065

32

BZX55C 13

12.4

14.1

26

 

5.0

110

 

1.0

10

 

0.1

2.0

0.070

29

BZX55C 15

13.8

15.6

30

 

5.0

110

 

1.0

11

 

0.1

2.0

0.070

27

BZX55C 16

15.3

17.1

40

 

5.0

170

 

1.0

12

 

0.1

2.0

0.075

24

BZX55C 18

16.8

19.1

50

 

5.0

170

 

1.0

13

 

0.1

2.0

0.075

21

BZX55C 20

18.8

21.1

55

 

5.0

220

 

1.0

15

 

0.1

2.0

0.080

20

BZX55C 22

20.8

23.3

55

 

5.0

220

 

1.0

16

 

0.1

2.0

0.080

18

BZX55C 24

22.8

25.6

80

 

5.0

220

 

1.0

18

 

0.1

2.0

0.080

16

BZX55C 27

25.1

28.9

80

 

5.0

220

 

1.0

20

 

0.1

2.0

0.085

14

BZX55C 30

28.0

32.0

80

 

5.0

220

 

1.0

22

 

0.1

2.0

0.085

13

BZX55C 33

31.0

35.0

80

 

5.0

220

 

1.0

24

 

0.1

2.0

0.085

12

VF Foward

Voltage = 1.0 V Maximum @ IF

= 100 mA for all BZX 55 series

 

 

 

 

 

Series 33 BZX55C - 3V3 BZX55C

ã 1997 Fairchild Semiconductor Corporation

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