Fairchild Semiconductor BD244C, BD244A, BD244 Datasheet

BD244/A/B/C

Medium Power Linear and Switching Applications

• Complement to BD243, BD243A, BD243B and BD243C respectively

1

TO-220

1.Base

2.Collector

3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25° C unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

: BD244

- 45

V

: BD244A

- 60

V

: BD244B

- 80

V

: BD244C

- 100

V

VCEO

Collector-Emitter Voltage

: BD244

- 45

V

: BD244A

- 60

V

: BD244B

- 80

V

: BD244C

- 100

V

VEBO

Emitter-Base Voltage

- 5

V

IC

Collector Current (DC)

- 6

A

ICP

*Collector Current (Pulse)

- 10

A

IB

Base Current

- 2

A

PC

Collector Dissipation (TC=25° C)

65

W

TJ

Junction Temperature

150

° C

TSTG

Storage Temperature

- 65 ~ 150

° C

Electrical Characteristics TC=25° C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V

(sus)

* Collector-Emitter Sustaining Voltage

CEO

: BD244

IC = - 30mA, IB = 0

- 45

V

: BD244A

- 60

V

: BD244B

- 80

V

: BD244C

- 100

V

ICEO

Collector Cut-off Current

: BD244/244A

VCE = - 30V, IB = 0

- 0.7

mA

: BD244B/244C

VCE = - 60V, IB = 0

- 0.7

mA

ICES

Collector Cut-off Current

: BD244

VCE = - 45V, VBE = 0

- 0.4

mA

: BD244A

VCE = - 60V, VBE = 0

- 0.4

mA

: BD244B

VCE = - 80V, VBE = 0

- 0.4

mA

: BD244C

VCE = - 100V, VBE = 0

- 0.4

mA

IEBO

Emitter Cut-off Current

VEB = - 5V, IC = 0

- 1

mA

hFE

* DC Current Gain

VCE = - 4V, IC = - 0.3A

30

VCE = - 4V, IC = - 3A

15

V

(sat)

* Collector-Emitter Saturation Voltage

I

= - 6A, I

= - 1A

- 1.5

V

CE

C

B

V

(on)

* Base-Emitter ON Voltage

V

= - 4V, I = - 6A

- 2

V

BE

CE

C

* Pulse Test: PW =300 s, duty Cycle =2% Pulsed

BD244/A/B/C

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Typical Characteristics

	1000
				VCE = 2V
GAIN
, DC CURRENT	100
FE
h
	10
	-0.01	-0.1	-1	-10
		IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

	-1
VOLTAGE			IC = 10.1 IB
(sat)(V), SATURATION	-0.1
CE
V
	-0.01
	-0.1	-1	-10

IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

	80
	70
DISSIPATION	60
	50
	40
POWER	30
[W],	20
C
P	10
	0
	0	25	50	75	100	125	150	175	200
			T[oC], CASE TEMPERATURE

Figure 5. Power Derating

VOLTAGE	-1.8			BD244/A/B/C
	-1.7		IC = 10.1 IB
	-1.6
	-1.5
SATURATION	-1.4
	-1.0
	-1.3
	-1.2
(sat)(V),	-1.1
	-0.9
	-0.8
BE	-0.7
V	-0.6
	-0.5
	-0.1	-1	-10

IC[A], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

	-100
CURRENT	-10	IC(max)		10 s
COLLECTOR		10	1
		m	m
		s	s	100 s
	-1	DC
[A],		BD244
		BD244A
C
I		BD244B
		BD244C
	-0.1
	-1	-10		-100	-1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 4. Safe Operating Area

©2000 Fairchild Semiconductor International

Rev. A, February 2000