Fairchild Semiconductor BZX79C12, BZX79C11, BZX79C10, BZX79C13, BZX79C5V1 Datasheet

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Fairchild Semiconductor BZX79C12, BZX79C11, BZX79C10, BZX79C13, BZX79C5V1 Datasheet

Discrete POWER & Signal

Technologies

BZX79C 3V3 - 33 Series Half Watt Zeners

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Parameter

 

Value

Units

 

 

 

 

Storage Temperature Range

 

-65 to +200

°C

Maximum Junction Operating Temperature

 

+ 200

°C

Lead Temperature (1/16” from case for 10 seconds)

 

+ 230

°C

Total Device Dissipation

 

500

mW

Derate above 25°C

 

4.0

mW/°C

Surge Power**

 

30

W

 

 

 

 

*These ratings are limiting values above which the serviceability of the diode may be impaired.

**Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C.

NOTES:

1)These ratings are based on a maximum junction temperature of 200 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Tolerance: C = 5%

DO-35

Electrical Characteristics

TA = 25°C unless otherwise noted

 

 

 

 

 

 

Device

VZ*

 

ZZ

IZT

ZZK

@

IZT

VR

@

IR

 

TC

(V)

 

(Ω)

@ (mA)

(Ω)

(mA)

(V)

(μA)

(mV/°C)

 

 

 

 

MIN

MAX

 

 

 

 

 

 

 

 

MIN

 

MAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BZX79C 3V3

3.1

3.5

95

5.0

600

 

1.0

1.0

 

25

- 3.5

 

0.0

BZX79C 3V6

3.4

3.8

90

5.0

600

 

1.0

1.0

 

15

- 3.5

 

0.0

BZX79C 3V9

3.7

4.1

90

5.0

600

 

1.0

1.0

 

10

- 3.5

 

+ 0.3

BZX79C 4V3

4.0

4.6

90

5.0

600

 

1.0

1.0

 

5.0

- 3.5

 

+ 1.0

BZX79C 4V7

4.4

5.0

80

5.0

500

 

1.0

2.0

 

3.0

- 3.5

 

+ 0.2

BZX79C 5V1

4.8

5.4

60

5.0

480

 

1.0

2.0

 

2.0

- 2.7

 

+ 1.2

BZX79C 5V6

5.2

6.0

40

5.0

400

 

1.0

2.0

 

1.0

- 2.0

 

+ 2.5

BZX79C 6V2

5.8

6.6

10

5.0

150

 

1.0

4.0

 

3.0

+ 0.4

 

+ 3.7

BZX79C 6V8

6.4

7.2

15

5.0

80

 

1.0

4.0

 

2.0

+ 1.2

 

+ 4.5

BZX79C 7V5

7.0

7.9

15

5.0

80

 

1.0

5.0

 

1.0

+ 2.5

 

+ 5.3

BZX79C 8V2

7.7

8.7

15

5.0

80

 

1.0

5.0

 

0.7

+ 3.2

 

+ 6.2

BZX79C 9V1

8.5

9.6

15

5.0

100

 

1.0

6.0

 

0.5

+ 3.8

 

+ 7.0

BZX79C 10

9.4

10.6

20

5.0

150

 

1.0

7.0

 

0.2

+ 4.5

 

+ 8.0

BZX79C 11

10.4

11.6

20

5.0

150

 

1.0

8.0

 

0.1

+ 5.4

 

+ 9.0

BZX79C 12

11.4

12.7

25

5.0

150

 

1.0

8.0

 

0.1

+ 6.0

 

+ 10

BZX79C 13

12.4

14.1

30

5.0

170

 

1.0

8.0

 

0.10

- 7.0

 

+ 11

BZX79C 15

13.8

15.6

30

5.0

200

 

1.0

10.5

 

0.05

- 9.2

 

+ 13

BZX79C 16

15.3

17.1

40

5.0

200

 

1.0

11.2

 

0.05

+ 10.4

 

+ 14

BZX79C 18

16.8

19.1

45

5.0

225

 

1.0

12.6

 

0.05

+ 12.4

 

+ 16

BZX79C 20

18.8

21.2

55

5.0

225

 

1.0

14

 

0.05

+ 14.4

 

+ 18

BZX79C 22

20.8

23.3

55

5.0

250

 

1.0

15.4

 

0.05

+ 16.4

 

+ 20

BZX79C 24

22.8

25.6

70

5.0

250

 

1.0

16.8

 

0.05

+ 18.4

 

+ 22

BZX79C 27

25.1

28.9

80

2.0

300

 

0.5

18.9

 

0.05

+ 21.4

 

+ 25.3

BZX79C 30

28

32

80

2.0

300

 

0.5

21

 

0.05

+ 24.4

 

+ 29.4

BZX79C 33

31

35

80

2.0

325

 

0.5

23.1

 

0.05

+ 27.4

 

+ 33.4

VF Foward

Voltage = 1.5 V Maximum @ IF

= 100 mA for all BZX 79 series

 

 

 

 

 

 

*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%

Series 33 BZX79C - 3V3 BZX79C

ã 1997 Fairchild Semiconductor Corporation

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