Fairchild Semiconductor BD240A, BD240, BD240C Datasheet

BD240/A/B/C

Medium Power Linear and Switching Applications

• Complement to BD239/A/B/C respectively

						1	TO-220
						1.Base	2.Collector	3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25° C unless otherwise noted
Symbol			Parameter			Value		Units
VCEO		Collector-Base Voltage	: BD240				- 45		V
			: BD240A				- 60		V
			: BD240B				- 80		V
			: BD240C			- 100			V
VCER		Collector-Emitter Voltage
			: BD240				- 55		V
			: BD240A				- 70		V
			: BD240B				- 90		V
			: BD240C			- 115			V
VEBO		Emitter-Base Voltage					- 5		V
IC		Collector Current (DC)					- 2		A
ICP		*Collector Current (Pulse)					- 4		A
IB		Base Current				- 0.6			A
PC		Collector Dissipation ( TC=25° C)					30		W
TJ		Junction Temperature					150		° C
TSTG		Storage Temperature				- 65 ~ 150			° C
Electrical Characteristics TC=25° C unless otherwise noted
Symbol		Parameter		Test Condition		Min.	Typ.	Max.	Units
V	(sus)	* Collector-Emitter Sustaining Voltage
CEO			: BD240	IC = - 30mA, IB = 0		- 45			V
			: BD240A			- 60			V
			: BD240B			- 80			V
			: BD240C			- 100			V
ICEO		Collector Cut-off Current	: BD240/A	VCE = - 30V, IB = 0				- 0.3	mA
			: BD240B/C	VCE = - 60V, IB = 0				- 0.3	mA
ICES		Collector Cut-off Current	: BD240	VCE = - 45V, VBE = 0				- 0.2	mA
			: BD240A	VCE = - 60V, VBE = 0				- 0.2	mA
			: BD240B	VCE = - 80V, VBE = 0				- 0.2	mA
			: BD240C	VCE = - 100V, VBE = 0				- 0.2	mA
IEBO		Emitter Cut-off Current		VEB = - 5V, IC = 0				- 1	mA
hFE		* DC Current Gain		VCE = - 4V,IC = - 0.2A		40
				VCE = - 4V, IC = - 1A		15
V	(sat)	* Collector-Emitter Saturation Voltage		I = - 1A , I = - 0.2A				- 0.7	V
CE				C	B
V	(on)	* Base-Emitter ON Voltage		V	= - 4V, I = - 1A			- 1.3	V
BE				CE	C

* Pulse Test: PW=350 s, duty Cycle≤ 2.0% Pulsed

BD240/A/B/C

©2000 Fairchild Semiconductor International

Rev. A, February 2000