|
PNP EPITAXIAL |
BC556/557/558/559/560 |
SILICON TRANSISTOR |
|
|
SWITCHING AND AMPLIFIER
∙HIGH VOLTAGE: BC556, VCEO= -65V
∙LOW NOISE: BC559, BC560
∙Complement to BC546 ... BC 550
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic |
Symbol |
Rating |
Unit |
|
|
|
|
|
|
Collector-Base Capacitance |
VCBO |
|
|
|
: BC556 |
|
-80 |
V |
|
: BC557/560 |
|
-50 |
V |
|
: BC558/559 |
|
-30 |
V |
|
Collector-Emitter Voltage |
VCEO |
|
|
|
: BC556 |
|
-65 |
V |
|
: BC557/560 |
|
-45 |
V |
|
: BC558/559 |
|
-30 |
V |
|
Emitter-Base Voltage |
VEBO |
-5 |
V |
|
Collector Current (DC) |
IC |
-100 |
mA |
|
Collector Dissipation |
PC |
500 |
mW |
|
Junction Temperature |
TJ |
|||
150 |
°C |
|||
Storage Temperature |
TSTG |
|||
-65 ~ 150 |
°C |
|||
|
|
|||
|
|
|
|
TO-92
1. Collector 2. Base 3. Emitter
ELECTRICAL CHARACTERISTICS (TA=25°C)
|
Characteristic |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
|
|
Collector Cut-off Current |
ICBO |
VCB= -30V, IE=0 |
|
|
-15 |
nA |
|
DC Current Gain |
hFE |
VCE= -5V, IC=2mA |
110 |
|
800 |
|
|
Collector Emitter Saturation Voltage |
VCE (sat) |
IC= -10mA, IB= -0.5mA |
|
-90 |
-300 |
mV |
|
|
|
VBE (on) |
IC= -100mA, IB= -5mA |
|
-250 |
-650 |
mV |
Collector Base Saturation Voltage |
IC= -10mA, IB= -0.5mA |
|
-700 |
|
mV |
||
|
|
VBE (on) |
IC= -100mA, IB= -5mA |
|
-900 |
|
mV |
Base Emitter On Voltage |
VCE= -5V, IC= -2mA |
-600 |
-660 |
-750 |
mV |
||
|
|
fT |
VCE= -5V, IC= -10mA |
|
|
-800 |
mV |
Current Gain Bandwidth Product |
VCE= -5V, IC= -10mA |
|
150 |
|
MHz |
||
Collector Base Capacitance |
CCBO |
VCB= -10V, f=1MHz |
|
|
6 |
pF |
|
Noise Figure |
: BC556/557/558 |
NF |
VCE= -5V, IC= -200μA |
|
2 |
10 |
dB |
|
: BC559/560 |
|
f=1KHz, RG=2KΩ |
|
1 |
4 |
dB |
|
: BC559 |
NF |
VCE= -5V, IC= -200μA |
|
1.2 |
4 |
dB |
|
: BC560 |
|
RG=2KΩ |
|
1.2 |
2 |
dB |
|
|
|
f=30~15000MHz |
|
|
|
|
|
|
|
|
|
|
|
|
hFE CLASSIFICATION
Classification |
A |
B |
C |
|
|
|
|
hFE |
110-220 |
200-450 |
420-800 |
|
|
|
|
Rev. B
ã1999 Fairchild Semiconductor Corporation
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