BD534/536/538
Medium Power Linear and Switching Applications
• Low Saturation Voltage
• Complement to BD533, BD535 and BD537 respectively
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TO-220 |
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1.Base 2.Collector |
3.Emitter |
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PNP Epitaxial Silicon Transistor |
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Absolute Maximum Ratings TC=25° C unless otherwise noted |
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Symbol |
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Parameter |
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Value |
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Units |
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VCBO |
Collector-Base Voltage |
: BD534 |
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- 45 |
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V |
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: BD536 |
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- 60 |
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V |
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: BD538 |
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- 80 |
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V |
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VCEO |
Collector-Emitter Voltage |
: BD534 |
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- 45 |
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V |
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: BD536 |
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- 60 |
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V |
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: BD538 |
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- 80 |
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V |
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VEBO |
Emitter-Base Voltage |
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- 5 |
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V |
IC |
Collector Current (DC) |
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- 8 |
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A |
IB |
Base Current |
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- 1 |
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A |
PC |
Collector Dissipation (TC=25° C) |
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50 |
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W |
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TJ |
Junction Temperature |
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150 |
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° C |
TSTG |
Storage Temperature |
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- 65 ~ 150 |
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° C |
Electrical Characteristics TC=25° C unless otherwise noted
Symbol |
Parameter |
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Test Condition |
Min. |
Typ. |
Max. |
Units |
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ICBO |
Collector Cut-off Current |
: BD534 |
VCB = - 45V, IE = 0 |
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- 100 |
A |
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: BD536 |
VCB = - 60V, IE = 0 |
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- 100 |
A |
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: BD538 |
VCB = - 80V, IE = 0 |
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- 100 |
A |
ICES |
Collector Cut-off Current |
: BD534 |
VCE = - 45V, VBE = 0 |
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- 100 |
A |
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: BD536 |
VCE = - 60V, VBE = 0 |
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- 100 |
A |
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: BD538 |
VCE = - 80V, VBE = 0 |
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- 100 |
A |
IEBO |
Emitter Cut-off Current |
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VEB = - 5V, IC = 0 |
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- 1 |
mA |
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hFE |
* DC Current Gain |
: ALL DEVICE |
VCE = -2 V, IC = - 500mA |
40 |
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: BD534/536 |
VCE = - 5V, IC = - 10mA |
20 |
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: BD538 |
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15 |
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: BD534/536 |
VCE = - 2V, IC = - 2A |
25 |
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: BD538 |
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15 |
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hFE |
hFE Groups |
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VCE = - 2V, IC = - 2A |
30 |
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75 |
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J |
: ALL DEVICE |
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VCE = - 2V, IC = - 3A |
15 |
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K |
: ALL DEVICE |
VCE = -2V, IC = - 2A |
40 |
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100 |
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VCE = - 2V, IC = - 3A |
20 |
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VCE(sat) |
* Collector-Emitter Saturation Voltage |
IC = - 2A, IB = - 0.2A |
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- 0.8 |
V |
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IC = - 6A, IB = - 0.6A |
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- 0.8 |
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V |
VBE(on) |
* Base-Emitter ON Voltage |
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VCE = - 2V, IC = - 2A |
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- 1.5 |
V |
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fT |
Current Gain Bandwidth Product |
VCE = - 1V, IC = - 500mA |
3 |
12 |
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MHz |
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* Pulse Test: PW =300 s, duty Cycle =1.5% Pulsed
BD534/536/538
©2000 Fairchild Semiconductor International |
Rev. A, February 2000 |
Typical Characteristics
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1000 |
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VCE = -2V |
GAIN |
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, DC CURRENT |
100 |
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FE |
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h |
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10 |
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-0.01 |
-0.1 |
-1 |
-10 |
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IC[A], COLLECTOR CURRENT |
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Figure 1. DC current Gain
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-100 |
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CURRENT |
-10 |
IC(max) |
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10 |
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10ms |
1ms |
s |
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COLLECTOR[A], |
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100 s |
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BD534 |
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DC |
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-1 |
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C |
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I |
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BD536 |
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-0.1 |
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BD538 |
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-1 |
-10 |
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-100 |
-1000 |
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VCE[V], COLLECTOR-EMITTER VOLTAGE |
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Figure 3. Safe Operating Area
VOLTAGESATURATION |
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IC = 10 IB |
BD534/536/538 |
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-1 |
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VBE(sat) |
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(sat)[V], |
-0.1 |
VCE(sat) |
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CE |
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(sat)[V], V |
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BE |
-0.01 |
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V |
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-0.1 |
-1 |
-10 |
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IC[A], COLLECTOR CURRENT |
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Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
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80 |
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70 |
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DISSIPATION |
60 |
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50 |
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40 |
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POWER |
30 |
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[W], |
20 |
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C |
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P |
10 |
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0 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
200 |
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TC[oC], CASE TEMPERATURE |
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Figure 4. Power Derating
©2000 Fairchild Semiconductor International |
Rev. A, February 2000 |
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