Fairchild Semiconductor BDX53A, BDX53, BDX53C, BDX53B Datasheet

BDX53/A/B/C

Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications

• Power Darlington TR

• Complement to BDX54, BDX54A, BDX54B and BDX54C respectively

			1	TO-220
NPN Epitaxial Silicon Transistor			1.Base 2.Collector			3.Emitter
Absolute Maximum Ratings TC=25° C unless otherwise noted
Symbol	Parameter			Value		Units
VCBO	Collector-Base Voltage	: BDX53		45		V
	: BDX53A			60		V
	: BDX53B			80		V
	: BDX53C			100		V
VCEO	Collector-Emitter Voltage	: BDX53		45		V
	: BDX53A			60		V
	: BDX53B			80		V
	: BDX53C			100		V
VEBO	Emitter-Base Voltage			5		V
IC	Collector Current (DC)			8		A
ICP	*Collector Current (Pulse)			12		A
IB	Base Current			0.2		A
PC	Collector Dissipation (TC=25° C)			60		W
TJ	Junction Temperature			150		° C
TSTG	Storage Temperature			- 65 ~ 150		° C

Electrical Characteristics TC=25° C unless otherwise noted

Symbol	Parameter		Test Condition	Min.	Typ.	Max.	Units
VCEO(sus)	* Collector-Emitter Sustaining Voltage
		: BDX53	IC = 100mA, IB = 0	45			V
		: BDX53A		60			V
		: BDX53B		80			V
		: BDX53C		100			V
ICBO	Collector Cut-off Current	: BDX53	VCB = 45V, IE = 0			200	A
		: BDX53A	VCB = 60V, IE = 0			200	A
		: BDX53B	VCB = 80V, IE = 0			200	A
		: BDX53C	VCB = 100V, IE = 0			200	A
ICEO	Collector Cut-off Current	: BDX53	VCE = 22V, IB = 0			500	A
		: BDX53A	VCE = 30V, IB = 0			500	A
		: BDX53B	VCE = 40V, IB = 0			500	A
		: BDX53C	VCE = 50V, IB = 0			500	A
IEBO	Emitter Cut-off Current		VEB = 5V, IC = 0			2	mA
hFE	* DC Current Gain		VCE = 3V, IC = 3A	750
VCE(sat)	* Collector-Emitter Saturation Voltage		IC = 3A, IB = 12mA			2	V
VBE(sat)	* Base-Emitter Saturation Voltage		IC = 3A, IB = 12mA			2.5	V
VF	* Parallel Diode Forward Voltage		IF= 3A		1.8	2.5	V
			IF= 8A		2.5		V
* Pulse Test: PW=300	s, duty Cycle =1.5% Pulsed

BDX53/A/B/C

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Typical Characteristics

	100000
			VCE = 3V
CURRENT GAIN	10000
, DC	1000
FE
h
	100
	0.1	1	10
		IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

	3.2
VOLTAGE	3.0		IC = 250IB
	2.8
	2.6
	2.4
SATURATION
	2.2
	2.0
	1.8
	1.6
(sat)[V],	1.4
	1.2
CE	1.0
V	0.8
	0.6
	0.1	1	10
		IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

	100
CURRENT		IC Max. (Continuous)
		IC Max. (Pulsed)		10us
	10		1ms
COLLECTOR
			DC	100us
	1
[A],			BDX53
I			BDX53A
C
			BDX53B
			BDX53C
	0.1
	1		10	100	1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

VOLTAGE	3.4			BDX53/A/B/C
	3.2		IC = 250IB
	3.0
	2.8
SATURATION	2.6
	2.4
	2.2
	2.0
(sat)[V],	1.8
	1.6
	1.4
BE	1.2
V	1.0
	0.8
	0.1	1	10
		IC[A], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

	3.0
	2.8
VOLTAGE	2.6
	2.4
	2.2
FORWARD	2.0
	1.8
	1.6
	1.4
(sat)[V],	1.2
	1.0
F
V	0.8
	0.6
	0.4
	0.1	1	10
		IF[A], FORWARD CURRENT

Figure 4. Damper Diode Forward Voltage

	80
	70
DISSIPATION	60
	50
	40
POWER	30
[W],	20
D
P	10
	0
	0	25	50	75	100	125	150	175
			TC[oC], CASE TEMPERATURE

Figure 6. Power Derating

©2000 Fairchild Semiconductor International

Rev. A, February 2000