BD135/137/139
Medium Power Linear and Switching Applications
• Complement to BD136, BD138 and BD140 respectively
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TO-126 |
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1. Emitter 2.Collector |
3.Base |
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NPN Epitaxial Silicon Transistor |
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Absolute Maximum Ratings TC=25° C unless otherwise noted |
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Symbol |
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Parameter |
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Value |
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Units |
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VCBO |
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Collector-Base Voltage |
: BD135 |
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45 |
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V |
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: BD137 |
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60 |
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V |
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: BD139 |
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80 |
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V |
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VCEO |
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Collector-Emitter Voltage |
: BD135 |
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45 |
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V |
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: BD137 |
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60 |
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V |
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: BD139 |
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80 |
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V |
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VEBO |
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Emitter-Base Voltage |
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5 |
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V |
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IC |
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Collector Current (DC) |
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1.5 |
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A |
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ICP |
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Collector Current (Pulse) |
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3.0 |
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A |
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IB |
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Base Current |
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0.5 |
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A |
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PC |
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Collector Dissipation (TC=25° C) |
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12.5 |
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W |
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PC |
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Collector Dissipation (Ta=25° C) |
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1.25 |
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W |
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TJ |
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Junction Temperature |
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150 |
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° C |
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TSTG |
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Storage Temperature |
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- 55 ~ 150 |
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° C |
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Electrical Characteristics TC=25° C unless otherwise noted |
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Symbol |
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Parameter |
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Test Condition |
Min. |
Typ. |
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Max. |
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Units |
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V |
(sus) |
Collector-Emitter Sustaining Voltage |
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CEO |
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: BD135 |
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IC = 30mA, IB = 0 |
45 |
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V |
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: BD137 |
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60 |
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V |
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: BD139 |
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80 |
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V |
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ICBO |
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Collector Cut-off Current |
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VCB = 30V, IE = 0 |
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0.1 |
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A |
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IEBO |
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Emitter Cut-off Current |
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VEB = 5V, IC = 0 |
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10 |
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A |
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hFE1 |
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DC Current Gain : ALL DEVICE |
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VCE = 2V, IC = 5mA |
25 |
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hFE2 |
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: ALL DEVICE |
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VCE = 2V, IC = 0.5A |
25 |
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hFE3 |
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: BD135 |
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VCE = 2V, IC = 150mA |
40 |
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250 |
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: BD137, BD139 |
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40 |
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160 |
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VCE(sat) |
Collector-Emitter Saturation Voltage |
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IC = 500mA, IB = 50mA |
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0.5 |
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V |
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VBE(on) |
Base-Emitter ON Voltage |
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VCE = 2V, IC = 0.5A |
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1 |
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V |
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hFE Classification
Classification |
6 |
10 |
16 |
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hFE3 |
40 ~ 100 |
63 ~ 160 |
100 ~ 250 |
BD135/137/139
©2000 Fairchild Semiconductor International |
Rev. A, February 2000 |
Typical Characteristics
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100 |
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VCE = 2V |
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90 |
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GAIN |
80 |
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70 |
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CURRENT |
60 |
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50 |
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40 |
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, DC |
30 |
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FE |
20 |
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h |
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10 |
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0 |
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10 |
100 |
1000 |
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IC[mA], COLLECTOR CURRENT |
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Figure 1. DC current Gain
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1.1 |
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VOLTAGE |
1.0 |
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0.9 |
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(sat) |
IB |
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VBE |
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10 |
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= |
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0.8 |
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IC |
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(on) |
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-EMITTER |
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0.7 |
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VBE |
5V |
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= |
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VCE |
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0.6 |
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BASE |
0.5 |
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0.4 |
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[V], |
0.3 |
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BE |
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V |
0.2 |
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0.1 |
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1E-3 |
0.01 |
0.1 |
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1 |
10 |
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IC[A], COLLECTOR CURRENT |
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Figure 3. Base-Emitter Voltage
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20.0 |
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17.5 |
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DISSIPATION |
15.0 |
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12.5 |
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10.0 |
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POWER |
7.5 |
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[W], |
5.0 |
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C |
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P |
2.5 |
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0.0 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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TC[oC], CASE TEMPERATURE |
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Figure 5. Power Derating
SATURATIONVOLTAGE |
200 |
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BD135/137/139 |
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500 |
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450 |
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B |
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I |
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400 |
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20 |
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= |
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C |
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I |
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350 |
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B |
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I |
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300 |
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10 |
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= |
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250 |
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C |
(sat)[mV], |
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I |
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150 |
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100 |
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CE |
50 |
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V |
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0 |
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1E-3 |
0.01 |
0.1 |
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1 |
10 |
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IC[A], COLLECTOR CURRENT |
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Figure 2. Collector-Emitter Saturation Voltage |
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10 |
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CURRENT |
IC MAX. (Pulsed) |
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10us |
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IC MAX. (Continuous) |
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1ms |
100us |
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1 |
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COLLECTOR[A], |
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DC |
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0.1 |
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I |
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BD137 BD135 |
BD139 |
C |
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0.01 |
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1 |
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10 |
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100 |
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VCE[V], COLLECTOR-EMITTER VOLTAGE |
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Figure 4. Safe Operating Area
©2000 Fairchild Semiconductor International |
Rev. A, February 2000 |
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