BF245A/BF245B/BF245C
N-Channel Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50.
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TO-92 |
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G S D |
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Absolute Maximum Ratings TC=25° C unless otherwise noted |
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Symbol |
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Parameter |
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Value |
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Units |
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VDG |
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Drain-Gate Voltage |
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30 |
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V |
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VGS |
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Gate-Source Voltage |
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30 |
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V |
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IGF |
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Forward Gate Current |
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10 |
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mA |
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PD |
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Total Device Dissipation @TA=25° C |
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350 |
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mW |
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Derate above 25° C |
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2.8 |
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mW/° C |
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TJ, TSTG |
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Operating and Storage Junction Temperature Range |
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- 55 ~ 150 |
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° C |
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Electrical Characteristics TC=25° C unless otherwise noted |
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Symbol |
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Parameter |
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Test Condition |
Min. |
Typ. |
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Max. |
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Units |
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Off Characteristics |
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V(BR)GSs |
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Gate-Source Breakdown Voltage |
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VDS = 0, IG = 1µ A |
30 |
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V |
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VGS |
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Gate-Source |
BF245A |
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VDS = 15V, ID = 200µ A |
0.4 |
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2.2 |
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V |
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BF245B |
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1.6 |
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3.8 |
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BF245C |
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3.2 |
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7.5 |
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VGS(off) |
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Gate-Source Cut-off Voltage |
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VDS = 15V, ID = 10nA |
-0.5 |
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-8 |
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V |
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IGSS |
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Gate Reverse Current |
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VGS = 20V, VGS = 0 |
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5 |
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nA |
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On Characteristics |
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IDSS |
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Zero-Gate Voltage Drain Current |
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BF245A |
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VGS = 15V, VGS = 0 |
2 |
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6.5 |
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mA |
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BF245B |
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6 |
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15 |
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BF245C |
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12 |
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25 |
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On Characteristics |
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gfs |
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Common Source Forward |
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VGS = 15V, VGS = 0, f = 1KHz |
3 |
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6.5 |
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m |
Ω |
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Transconductance |
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BF245A/BF245B/BF245C
©2002 Fairchild Semiconductor Corporation |
Rev. A, March 2002 |
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